PANASONIC MA738

Schottky Barrier Diodes (SBD)
MA2Q738 (MA738)
Silicon epitaxial planar type
2.5±0.3
2.15±0.3
2
1.2±0.4
Unit: mm
For high frequency rectification
8°
4.4±0.3
• IF(AV) = 1.5 A rectification is possible
• VR = 40 V is guaranteed
• Automatic insertion with the emboss taping is possible
• New Mini-power 2-pin package
1
Symbol
Rating
Unit
VR
40
V
Repetitive peak reverse-voltage
VRRM
40
V
Average forward current *1
IF(AV)
1.5
A
Non-repetitive peak forwardsurge-current *2
IFSM
60
A
Junction temperature
Tj
−40 to +125
°C
Storage temperature
Tstg
−40 to +125
°C
0 to 0.05
Reverse voltage (DC)
0.25+0.1
–0.05
8°
■ Absolute Maximum Ratings Ta = 25°C
Parameter
1.2±0.4
5.0+0.4
–0.1
■ Features
1.4±0.2
1 : Anode
2 : Cathode
NMiniP2-J1 Package
Marking Symbol: PD
Note) *1: With a printed circuit board (copper foil area 2.5 mm × 2.5 mm
+ 0.8 mm × 20 mm or more on both cathode and anode sides)
2:
The
peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
*
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Reverse current (DC)
IR
VR = 40 V
Forward voltage (DC)
VF
IF = 2 A
Terminal capacitance
Ct
VR = 10 V, f = 1 MHz
Reverse recovery time *
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
Min
Typ
Max
Unit
2
mA
0.55
70
V
pF
50
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 20 MHz
3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00021AED
1
MA2Q738
IF(AV)  Ta
IF  V F
IR  V R
104
A
105
K
75°C 25°C
2.0
20 2.5
(2)
1.5
103
(1)
1.0
0.5
0
TC = 125°C
102
10
1
0
50
100
10−1
150
Ta = 125°C
104
−20°C
Reverse current IR (µA)
2.5
Forward current IF (mA)
Average forward current IF(AV) (A)
0.8
103
75°C
102
25°C
10
0
Ambient temperature Ta (°C)
0.1
0.2
0.3
0.4
0.5
1
0.6
0
Forward voltage VF (V)
10
20
30
40
50
60
Reverse voltage VR (V)
(1) Printed circuit board: Glass epoxy board
(2) Printed circuit board: Alumina board
Copper foil: Both A and K sides
2.5 mm × 2.5 mm + 0.8 mm × 20 mm
VF  Ta
IR  T a
104
10 V
5V
0.7
Reverse current IR (µA)
Forward voltage VF (V)
103
0.6
0.5
IF = 2 A
0.4
0.3
0.2
100 mA
Ct  VR
600
VR = 40 V
500
Terminal capacitance Ct (pF)
0.8
102
10
1
400
300
200
100
0.1
10 mA
0
−40
0
40
80
120
160
Ambient temperature Ta (°C)
2
200
10−1
−40
0
0
40
80
120
160
Ambient temperature Ta (°C)
SKH00021AED
200
0
10
20
30
40
50
Reverse voltage VR (V)
60
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A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
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2001 MAR