PANASONIC 2SK3042

Power F-MOS FETs
2SK3042
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed: EAS > 45mJ
● High-speed switching: tf = 30ns
● No secondary breakdown
unit: mm
4.6±0.2
9.9±0.3
3.0±0.5
2.9±0.2
15.0±0.5
■ Applications
■ Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol
φ3.2±0.1
1.4±0.2
13.7±0.2
4.2±0.2
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
Ratings
0.8±0.1
Unit
1
Drain to Source breakdown voltage
VDSS
250
V
Gate to Source voltage
VGSS
±20
V
Drain current
DC
ID
±7
A
Pulse
IDP
±14
A
EAS*
45
mJ
Avalanche energy capacity
*
Allowable power
TC = 25°C
dissipation
Ta = 25°C
35
PD
2.6±0.1
1.6±0.2
2
0.55±0.15
2.54±0.3
3 5.08±0.5
1: Gate
2: Drain
3: Source
TO-220D Package
W
2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
L = 0.1mH, IL = 8A, VDD = 50V, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current
IDSS
Gate to Source leakage current
IGSS
VGS = ±20V, VDS = 0
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 10V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 5A
Forward transfer admittance
| Yfs |
VDS = 10V, ID = 5A
Diode forward voltage
VDSF
IDR = 8A, VGS = 0
min
typ
VDS = 200V, VGS = 0
Input capacitance (Common Source) Ciss
max
Unit
0.1
mA
±1
µA
250
V
1
0.4
2.7
5
V
0.6
Ω
−1.7
V
4.7
S
1100
pF
200
pF
Reverse transfer capacitance (Common Source) Crss
60
pF
Turn-on time (delay time)
td(on)
20
ns
Rise time
tr
VGS = 10V, ID = 5A
20
ns
Turn-off time (delay time)
td(off)
VDD = 100V, RL = 20Ω
130
ns
Fall time
tf
30
ns
Output capacitance (Common Source)
Coss
VDS = 10V, VGS = 0, f = 1MHz
1
Power F-MOS FETs
2SK3042
PD  Ta
Area of safe operation (ASO)
100
16
60
t =10µs
10
DC
3
100µs
1
1ms
0.3
10ms
100ms
0.1
0.03
(1) TC=Ta
(2) Without heat sink
TC=25˚C
14
VGS=15V
50
40
30
(1)
20
10V
12
Drain current ID (A)
Allowable power dissipation PD (W)
Non repetitive pulse
TC=25˚C
30
Drain current ID (A)
ID  VDS
10
7.5V
8
7V
6
6.5V
4
6V
40W
10
2
5.5V
5V
(2)
0.01
0
0
1
3
10
30
100
300
1000
0
Drain to source voltage VDS (V)
20
40
ID  VGS
Gate to source voltage VGS (V)
125˚C
150˚C
6
4
2
0
4
6
8
10
6.2
6.0
5.8
5.6
5.4
5.2
12
Gate to source voltage VGS (V)
25
50
75
100
125
4
3
2
1
150
| Yfs |  ID
TC=25˚C
0.5
0.4
VGS=10V
15V
0.3
0.2
0.1
0
2
4
6
8
Drain current ID (A)
10
25
50
75
100
125
150
Ciss, Coss, Crss  VDS
10000
VDS=10V
TC=25˚C
7
f=1MHz
TC=25˚C
3000
Ciss
1000
6
5
4
3
2
1
0
0
0
Case temperature TC (˚C)
8
Forward transfer admittance |Yfs| (S)
Drain to source ON-resistance RDS(on) (Ω)
5
Case temperature TC (˚C)
RDS(on)  ID
2
VDS=25V
ID=1mA
0
0
0.6
20
Vth  TC
5.0
2
15
6
VDS=10V
ID=3A
6.4
10
Drain to source voltage VDS (V)
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
Drain current ID (A)
8
0
5
0
VGS  TC
6.6
TC=0˚C
25˚C
75˚C
VDS=10V
80 100 120 140 160
Gate threshold voltage Vth (V)
10
60
Ambient temperature Ta (˚C)
0
2
4
6
8
10
12
Drain current ID (A)
14
16
300
100
Coss
30
Crss
10
3
1
0
40
80
120
160
200
Drain to source voltage VDS (V)
Power F-MOS FETs
2SK3042
Rth(t)  t
Thermal resistance Rth(t) (˚C/W)
102
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
10
(2)
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3