PIN Diodes MA6X556 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 0.65 ± 0.15 Rating Unit Reverse voltage (DC) VR 40 V Peak reverse voltage VRM 45 V Forward current (DC) IF 100 mA Power dissipation PD 150 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −55 to +150 °C + 0.1 4 3 + 0.1 0.16 − 0.06 + 0.2 2 0.1 to 0.3 0.4 ± 0.2 0 to 0.05 Symbol 5 0.8 ■ Absolute Maximum Ratings Ta = 25°C Parameter 2.9 − 0.05 + 0.2 1.1 − 0.1 • Small diode capacitance CD • Large variable range of forward dynamic resistance rf • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package 1.9 ± 0.1 0.95 0.95 6 ■ Features + 0.1 1 1.45 ± 0.1 1.5 0.5 − 0.05 0.65 ± 0.15 + 0.25 − 0.05 0.3 − 0.05 For UHF and SHF bands AGC 1 : Cathode 1 4 : Anode 3 2 : Cathode 2 5 : Anode 2 3 : Cathode 3 6 : Anode 1 Mini Type Package (6-pin) Marking Symbol: M2T Internal Connection 6 1 5 2 4 3 ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol Conditions Min Typ Max Unit 100 nA IR VR = 40 V Forward voltage (DC) VF IF = 100 mA 1.05 1.2 V Diode capacitance CD VR = 15 V, f = 1 MHz 0.3 0.5 pF Forward dynamic resistance* rf1 IF = 10 µA, f = 100 MHz rf2 IF = 10 mA, f = 100 MHz 1 2 6 kΩ 10 Ω Note) 1．Rated input/output frequency: 100 MHz 2. Each characteristic is a standard for individual diode 3．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA6X556 PIN Diodes IF VF 1 000 CD VR 2 Ta = 25°C IR T a 100 VR = 40 V f = 1 MHz Ta = 25°C 10 1 Reverse current IR (nA) Diode capacitance CD (pF) Forward current IF (mA) 1 100 0.5 0.3 0.2 0.1 10 1 0.1 0.05 0.03 0.1 0 0.4 0.8 1.2 1.6 2.0 rf IF Forward dynamic resistance rf (Ω) f = 100 MHz Ta = 25°C 103 102 10 1 0.01 0.1 1 Forward current IF (mA) 2 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) Forward voltage VF (V) 104 0.02 10 0.01 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C)