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Opto-semiconductors
Condensed Catalog
HAMAMATSU PHOTONICS K.K.
Our unique photonics technology delivers
highly sophisticated opto-semiconductors with
high-sensitivity and high-speed response.
Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that
time, Hamamatsu has developed and produced a wide range of opto-semiconductors such as
photodiodes, photo ICs, image sensors, and LEDs, as well as mini-spectrometers and many other
products using opto-semiconductors.
Our lineup of opto-semiconductors covers a broad spectrum from the infrared through the visible and
ultraviolet regions, extending to X-rays and even high energy particles. These are widely used in
many fields ranging from scientific measurements, medical diagnosis, communications, and
consumer electronics as well as in-vehicle applications.
In the days ahead, besides improving our semiconductor process and mounting/packaging technologies
to make them more sophisticated, we will fully utilize MOEMS (micro-opto-electro-mechanical systems)
technology that merges photonics technology with MEMS technology to develop opto-semiconductors
with even higher sensitivity, speeds, and functions.
Koei Yamamoto
Representative Director and Senior Managing Director
Director of Solid State Division
Hamamatsu Photonics K. K.
Contents
Applications of Hamamatsu opto-semiconductors ..................................... 3 - 5
Opto-semiconductor selection guide .................................................... 6 - 8
Manufacturing process of opto-semiconductors ................................. 9 - 12
Map / Annual sales / Organization chart ............................................35 - 36
1
Opto-semiconductors
evolving with the
advancement of
MOEMS technology
MEMS technology
Compact
Highly functional
High reliability
Etching
Nanoimprint
Three-dimensional
mounting technology
MOEMS
devices
∙ Semiconductor micromachining
to produce mechanical parts,
optical elements, sensors, and
wafer level packages
Downsize, integration
Module technology
Semiconductor process technology
Assembly technology
Si process
Various packages
Optics
Compound semiconductor
process
Assembly
∙ Optimum optical design and
effective simulation
∙ Wide spectral range
(UV/visible/infrared, X-ray, high energy)
∙ High sensitivity, high-speed response
∙ Highly functional devices based
on CMOS circuit technology
Analysis
∙ General-purpose and highly
reliable packages,
surface mount type, CSP,
flip-chip bonding
∙ Flexible customization
∙ Ready for low- and
high-volume production
Circuitry
∙ Analog and digital circuits,
ASIC, FPGA
Opto-semiconductor
devices
Software
∙ Supports various interfaces
Hamamatsu opto-semiconductors
Si photodiodes ....................... 13
Si APD ................................... 15
MPPC® ................................... 17
Photo IC ................................ 19
Image sensors ....................... 21
-
14
16
18
20
22
Flat panel sensors ......................... 23
PSD (position sensitive detectors) ... 24
Infrared detectors .................. 25 - 26
Visible light sensors ....................... 27
Color sensors ................................ 28
LED .............................................. 29
Optical communication devices ....... 30
Mini-spectrometers ................. 31 - 32
Opto-semiconductor modules .. 33 - 34
2
Applications of Hamamatsu opto-semiconductors
Hamamatsu opto-semiconductors have been used in wide-ranging fields including communications, industry and general electronics
as well as medical and scientific applications.
LCD color adjustment
Automotive applications
RGB color sensors detect the
brightness and color temperature
of room light and adjusts the
display colors.
Our automotive devices are widely
used in vehicles. (In-vehicle LAN,
ambient light level detection,
day/night detection, windshield rain
sensors, laser radars, multi-function
jog dials, pedestrian protection
systems, glare-proof mirrors, etc.)
RGB color sensors
©Frank Boston-Fotolia.com
X-ray non-destructive inspection
Dental X-ray imaging
Our Si photodiodes are widely used
as detectors in X-ray baggage
inspection systems.
CCD area image sensors are
used in panoramic/cephalometric
imaging equipment for dental
diagnosis.
Si photodiode arrays
3
CCD area image sensors
Optical communications
Rangefinders
We provide light transmitter and receiver devices
for optical fiber communications and FSO (free
space optics).
Si APD and PIN photodiodes
are used in surveying
instruments for distance
measurement.
Automotive devices
Si APD
Optical communication related devices
©Nmedia-Fotolia.com
Subaru Telescope [by courtesy of NAOJ
(National Astronomical Observatory of Japan)]
Flat panel sensor
4
Astronomical observation
Photon counting
The world’s highest sensitivity CCDs
manufactured by Hamamatsu are
installed in the Suprime Cam/Subaru
Prime Focus Camera of the Subaru
Telescope at the summit of Mauna Kea,
Hawaii.
The MPPC is used in diverse applications
for detecting extremely weak light at
the photon-counting level.
CCD area image sensor
Applications of Hamamatsu opto-semiconductors
Industrial robots
Semiconductor manufacturing equipment
Infrared LED and Si PIN photodiode arrays are used to
configure encoders built into robots for position control.
Back-thinned TDI-CCD image sensors are
used for wafer defect inspections.
Infrared LED
Si PIN photodiode arrays
Back-thinned TDI-CCD image sensors
©Zoe-Fotolia.com
CMS project
(by courtesy of CERN)
High energy experiments
MPPC
The European Organization for Nuclear
Research (CERN) in Switzerland is
conducting a project involving the Large
Hadron Collider (LHC). The Si strip detector by HAMAMATSU is being used as the
particle track detector in the collider, and
is detecting particle tracks with a precision on the order of several tens of μm.
Si strip detector
Si APD
5
Opto-semiconductor selection guide
High energy particle
X-ray
UV
Visible
Point sensor
Near IR
Photosensor
IR
Photon counter
2D
Image sensor
Im
1D
Segmented type
Position sensor
P
Non-segmented type
Light
emitter
Visible
IR
6
[Product name]
7
[Applications]
SSD
High energy physics, nuclear medicine, industrial measurement
Si photodiode for X-ray
Baggage inspection, non-destructive inspection, medical use
Si photodiode for UV light
Pollution analysis, spectroscopy, medical use, UV detection, colorimetry
Schottky type GaAsP photodiode
Pollution analysis, spectroscopy, colorimetry, UV detection
Schottky type GaP photodiode
UV detection
Si photodiode with compensation filter
Illuminometry, copiers, color sensors
Diffusion type GaAsP photodiode
Illuminometry, flame eyes (monitors)
Illuminance sensor
Energy-saving sensors for TV and the like, light dimmers for liquid crystal panels,
backlight dimmers for cell phones, light level measurements
Color sensor
Display color adjustment, color detection
Si photodiode
Optical communication devices, information equipment, automatic control systems, general electronics,
car electronics, photometric equipment, medical equipment, high energy physics
Si APD (avalanche photodiode)
Optical communication devices, information equipment, automatic control systems, general electronics,
car electronics, photometric equipment, medical equipment, high energy physics
Photo IC
Optical switches, office automation equipment, rotary encoders, optical fiber communications
IR-enhanced Si photodiode/Si APD
YAG laser monitoring, near infrared detection
InGaAs PIN photodiode
Optical communication device, IR laser monitoring, radiation thermometry, industrial measurement
PbS/PbSe photoconductive detector
Radiation thermometry, flame eyes, moisture analysis, gas analysis, spectroscopy
InSb photoconductive detector,
InSb/InAs/InAsSb photovoltaic detector
IR laser detection, spectroscopy, radiation thermometry, gas analysis, FTIR, thermal imaging
MCT (HgCdTe) photoconductive/
photovoltaic detector
Thermal imaging, radiation thermometry, FTIR, gas analysis, CO2 laser detection
Photon drag detector
CO2 laser detection
Thermopile detector
Radiation thermometry, gas analysis, flame eyes
MPPC
Medical equipment, nuclear medicine, high energy physics, radiation measurement
Area image sensor
Fluorescence spectroscopy, Raman spectroscopy, scientific measurement, X-ray imaging, near infrared imaging
X-ray image sensor
Radiography, non-destructive inspection
Flat panel sensor
Radiography, X-ray diffractometers, non-destructive inspection
Linear image sensor
Multichannel spectroscopy, spectrum analysis, optical measurement
Photodiode array
Multichannel spectroscopy, color analysis, spectrum analysis, position detection
Multi-element photodiode
Position detection
PSD (position sensitive detector)
Rangefinding, displacement sensing, laser optics, automatic control systems, high energy physics
Red LED
Optical switches, optical fiber communications
Infrared LED
Optical switches, light sources for measurement devices, optical communication devices, automatic control systems, rotary encoding
Mini-spectrometer,
Mini
Module
product
photosensor amplifier,
phot
APD module, etc.
Selection guide by wavelength
Spectral
range
Wavelength
UV
Visible
0.2
0.4
Near IR
0.6 0.8 1
Middle IR
2
4
Far IR
6
8
10
20 (μm)
Si
GaAsP
GaP
Photosensor
InGaAs
PbS
PbSe
InAs
InAsSb
InSb
MCT
Light emitter
Thermopile detector
GaAs LED
GaAlAs LED
AlGaInP LED
8
Manufacturing process of opto-semiconductors
Design
Design for new products
Design for custom products
Epitaxial growth process
[Typical compound semiconductor fabrication process]
[Example of custom orders]
Electrical and optical
characteristics
Active area
Number of elements
Package
Reliability
Wafer process
[Typical process of Si photodiode fabrication]
Thin-film crystal growth under ultra-high vacuum in MBE equipment
Oxidation
Thin-film crystal growth with MOCVD equipment
Photolithography
Etching
Photomask
Resist
SiO 2
Si
SiO 2
Resist
Si
SiO 2
Si
Si wafer (before process)
Thin films are formed on wafers by
oxidation or CVD process.
Device patterns are formed by
photolithographic technique.
Selective etching is performed on
the thin film on wafers.
Manufacturing technologies
Semiconductor process technologies
Hamamatsu has been manufacturing a wide range of opto-semiconductors using our unique wafer process technologies.
PIN bipolar process
Back-thinned CCD process
Fabricates high-speed photodiodes by integrating a PIN photodiode
and high-speed signal processing circuits onto a single chip.
CMOS process
Compound process
The integration of circuit functions in photodetectors helps to achieve
high performance, multifunctionality, and cost reduction in systems.
Utilizing compound semiconductor process technologies that include
MBE, MOCVD, and dry etching techniques optimized for precision
processing, we have been developing high-performance devices for
optical communications, chemical analysis, and measurement.
Product examples produced using our CMOS process
Product examples produced using our compound semiconductor process
Digital color sensors
9
Back-thinned CCD area image sensors have a very thin
photosensitive layer for high sensitivity yet low dark current.
CMOS image sensors
InGaAs APD
InGaAs linear image sensors
Main factory (Ichino)
Ion implantation
Metallization
Wafer inspection
Ion
Metal
SiO 2
Si
Metal
SiO 2
SiO 2
Si
Diffusion layer
Diffusion layer
Si
Diffusion layer
To assembly process
Doping impurities are injected into
wafers.
Metal pattern is formed.
Devices on the wafer are inspected
electrically and optically.
MEMS technologies
Hamamatsu is developing highly functional opto-semiconductors using a wide range of MEMS technologies.
Etching
Etching is a basic semiconductor
process technology. MEMS technology
utilizes anisotropic etching and
sacrificial layer etching as well as
conventional etching techniques to
provide versatile functions impossible
to achieve by conventional optosemiconductors.
V groove formed by
anisotropic etching
Nanoimprint
Nanoimprint is a technology for
fabricating fine structures at a high
throughput. Light curing resin is applied
to a substrate upon which a master
substrate with a fine structure is then
pressed. Light is then irradiated to
transfer the nanoscale structure to the
resin.
Actuators formed by sacrificial layer
etching (bulk micromaching)
3D mount technology
3D mount technology can be broadly grouped into “electrode technology” for fabricating
structures with 3D electrical connections and “bonding technology” for making wafer
level packages. Electrode technology is essential for achieving more sophisticated
functions and smaller size opto-semiconductors. Electrode technology involves techniques
for forming Si through-hole electrodes to extract electrodes from the backside of devices
and flip-chip bonding to make electrical connections between different materials. Bonding
technology includes anodic bonding and room-temperature bonding that need no
adhesives and that apply direct sealing on devices to achieve ultra-small packages.
Nanoimprint
20 μm pitch indium bump electrodes
10
Assembly process [Typical process]
Die bonding
Dicing
Metal package
Blade dicing
Chips are bonded to metal bases.
Die bonding
Ceramic package
Wafers are cut by a spinning blade.
Stealth dicing
Chips are bonded to ceramic bases.
Die bonding
Plastic package
A laser cuts a wafer by irradiating the interior of
the wafer.
Chips are bonded to lead frames.
Dicing
Bump forming
Blade dicing
Chip size package
or
Stealth dicing
Gold bumps are formed on wafers.
Manufacturing technologies
Mounting/packaging technologies
Hamamatsu offers a variety of package types to meet diverse market needs. For
example, metal packages are widely used in applications requiring high reliability.
Ceramic packages are used in general applications. Plastic packages are suitable for
high-volume applications where lower cost is essential. Special packages include
rectangular metal packages designed for use with thermoelectrically-cooled CCD
area image sensors. Many different types of surface mount packages are also
available. COB (chip on board) devices and thin plastic package devices are ideal
especially for applications where small, thin devices are needed. What's more,
photodiode/scintillator combination devices are available that detect X-rays or
radiation by converting them into visible light.
TO-CAN metal
11
Rectangular metal
Mitsue factory (Assembly factory) Shingai factory (Assembly factory)
Ceramic
Surface mount type ceramic
Test
Cap sealing
Wire-bonding
Electrical & optical test
Metal package test equipment
Chips are connected to metal bases using gold wires.
Metal caps are welded to metal bases.
Resin encapsulation
Wire-bonding
Chips are connected to ceramic bases using gold wires.
Plastic package test equipment
Resin is injected into ceramic bases.
Electrical & optical characteristics
are tested.
Resin molding and trimming
Wire-bonding
Appearance inspection
Appearance inspection system
Chips are connected to lead frames using gold wires.
Resin is molded along lead frames and chips.
X-ray & appearance inspection system
Flip chip bonding
Underfill filling
Chips with bumps are bonded to substrates by being flipped (inverted).
The space between the substrate and chip is filled in with resin.
Glass epoxy board
Plastic
The appearances of finished
products are inspected.
Long and narrow type
Chip size package
Cross section example of TSV
Glass
Insulating
film
Photodiode,
IC chip
Wiring
TSV
With scintillator
With flexible cable
Solder bump
TSV (through silicon via) technology
12
[Si photodiodes]
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Product lineup for wide-ranging applications
Si photodiodes are used in various applications covering optical fiber communications, copiers, analytical instruments and baggage
inspection, and are available in various packages including metal, ceramic and plastic packages, as well as surface mount packages.
1 Si photodiode
2 Si PIN photodiode
4 Si photodiode with preamp
5 TE-cooled type
Si photodiode
3 Multi-element type Si photodiode
6 Si photodiode for X-ray
Features
Major applications
Excellent linearity with respect to incident light
Analytical instrument
Low noise
General photometry
Wide spectral response range
Baggage inspection
Mechanically rugged
Optical fiber communications
Compact and lightweight
Long life
Spectral response (typical example)
S1226/S1336-8BQ, S1227/S1337-1010BR
S3590-19, S3759, S9219
(Typ. Ta=25 ºC)
0.8
(Typ. Ta=25 ºC)
0.8
QE=100%
S1336-8BQ
(For UV to NIR)
0.7
0.6
0.7
S1337-1010BR
(For UV to NIR)
Photosensitivity (A/W)
Photosensitivity (A/W)
QE=100%
0.5
0.4
0.3
0.2
S1226-8BQ
(IR sensitivity suppressed)
0.1
0
200
400
500
600
700
800
900
1000 1100 1200
Wavelength (nm)
S3590-19
(high violet sensitivity)
0.4
0.3
S9219
(visible-sensitive compensated)
0.2
0
200
300
400
500
600
700
800
900
1000 1100 1200
Wavelength (nm)
KSPDB0300EC
13
0.5
0.1
S1227-1010BR
(IR sensitivity suppressed)
300
S3759 (for YAG laser)
0.6
KSPDB0301EC
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Product lineup
Product name
Product examples
1 Si photodiode
For UV to near IR range
For visible to near IR range
For visible range
RGB color sensor
For VUV (vacuum ultraviolet) detection
For monochromatic light detection
For electron beam detection
2 Si PIN photodiode
Cutoff frequency: 1 GHz or more
Cutoff frequency: 500 MHz to less than 1 GHz
Cutoff frequency: 100 MHz to less than 500 MHz
Cutoff frequency: 10 MHz to less than 100 MHz
IR-enhanced type
For YAG laser detection
3 Multi-element type Si photodiode
Segmented type photodiode
One-dimensional, two-dimensional photodiode array
4 Si photodiode with preamp
5 TE-cooled type Si photodiode
For analytical instrument and precision measurement
6 Si photodiode for X-ray
With scintillator
Large photosensitive area type
Photodiode module
To make our photodiodes easier to use, we offer a variety of modules.
Product name
Features
Photodiode module
These modules are high-precision photodetectors integrating a Si photodiode or InGaAs photodiode
with a current-to-voltage conversion amplifier into a compact case. Dedicated controller is also provided
(sold separately).
Photosenser amplifier
Photosensor amplifiers are current-to-voltage conversion amplifiers used to amplify very slight photocurrent
from a photodiode with very low noise.
T O P I C
These Si PIN photodiodes offer high
sensitivity in the near infrared region
via MEMS technology. They have both
high-speed response and high sensitivity in the near infrared region which
have been difficult to achieve up to
now by conventional methods.
IR-enhanced Si PIN photodiode
■ Spectral response example
(Typ. Ta=25 °C)
0.8
QE=100%
Photosensitivity (A/W)
Si PIN photodiodes with enhanced near-infrared
sensitivity made by MEMS technology
0.6
0.4
Previous type
0.2
IR-enhanced
Si PIN photodiode
S11499 series
0
200
400
600
800
1000
1200
Wavelength (nm)
KPINB0374EC
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[Si APD]
S i
A V A L A N C H E
P H O T O D I O D E S
High-speed, high-sensitivity photodiodes with an internal gain mechanism
APD (avalanche photodiodes) are high-speed, high-sensitivity photodiodes that internally amplify photocurrent by the application of a reverse voltage.
Delivers a higher S/N than PIN photodiodes and is widely used in optical rangefinders, FSO (free space optics), scintillation detectors, etc.
1 Short wavelength type
2 Near infrared type
Features
Major applications
Excellent linearity with respect to incident light
Low-light-level detection
Low noise
Analytical instrument
Wide spectral response range
FSO
Mechanically rugged
Optical rangefinder
Compact and lightweight
Optical fiber communications
Long life
Laser radar
YAG laser detection
Spectral response
55
High
Near infrared type
(low bias operation)
40
Near infrared type
(low temperature coefficient)
35
Short wavelength type
(low bias operation)
Short wavelength type
20 (low terminal capacitance)
15
10
0
200
400
600
800
400
Near infrared type
(1000 nm band/high sensitivity)
Short wavelength type
(low terminal capacitance)
600
Short wavelength type
(low bias operation)
Near infrared type
(900 nm band, low
terminal capacitance)
Low
0
1000
1200
200
400
600
800
1000
1200
Wavelength (nm)
Wavelength (nm)
KAPDB0096EG
15
Near infrared type
(low bias operation, low
temperature coefficient)
200
Near infrared type
(900 nm band,
low terminal capacitance)
5
1000
800
Cutoff frequency (MHz)
Photosensitivity (A/W)
45
25
(Compared using devices with 0.5 mm photosensitive area)
IR-enhanced type
(1000 nm band/high sensitivity)
50
30
Cutoff frequency vs. recommended wavelength
(Typ. Ta=25 °C, M=50, λ=650 nm)
KAPDB0162ED
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P H O T O D I O D E S
Product lineup
Type
Recommended wavelength
Package
200 to 650 nm
Metal
Low-bias operation
1
Short
wavelength type
Low terminal
capacitance
Features
Enhanced sensitivity in the UV to visible
range
Metal,
ceramic
320 to 650 nm
High sensitivity in near infrared region and
low bias voltage operation
Metal
Low-bias operation
600 to 800 nm
Surface mount type
2
Near infrared
type
Low-cost, miniature and thin package
Low temperature
coefficient
600 to 800 nm
Metal
Easy voltage adjustment due to low temperature coefficient of bias voltage
900 nm band,
low terminal capacitance
800 to 1000 nm
Metal
Enhanced sensitivity in 900 nm band
1000 nm band/
high sensitivity
900 to 1150 nm
Metal
Enhanced sensitivity in 1000 nm band
APD modules
These modules consist of an APD, low-noise amplifier, and
bias power supply integrated in a compact package.
Type
Features
Standard type
Contains a near infrared or short wavelength type
APD. FC/SMA fiber adapters are also provided.
Sensitivity vs. response speed (APD modules)
109
C12703-01
DC to 100 kHz
-1.5 × 10 8 V/W
108
High-sensitivity type High gain type for detection under low illuminance
High-stability type
High-speed type
Operates over a wide range of frequencies
(up to 1 GHz)
Sensitivity (V/W)
C10508-01
Digital temperature-compensation, high-stability
APD module
107
DC to 10 MHz
2.5 × 106 to 1.25 × 107 V/W
106
DC to 10 MHz
1.5 × 10 6 V/W
C12703
C5658
50 kHz to 1 GHz
2.5 × 105 V/W
105
C12702 series
4 types are available according
to photosensitive area size and
wavelength range.
4 kHz to 100 MHz
-1 × 104 V/W
104
103
DC
10
100
1k
10 k
100 k
1M
10 M 100 M
1G
Response speed (Hz)
KACCB0115EF
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[MPPC ®]
M U L T I - P I X E L
P H O T O N
C O U N T E R S
Compact opto-semiconductors with excellent photon-counting capability
The MPPC (multi-pixel photon counter) is a new type of photon-counting device made up of multiple APD (avalanche photodiode) pixels operated in Geiger mode. The MPPC is essentially
an opto-semiconductor device with excellent photon-counting capability and which also possesses great advantages such as low-voltage operation and insensitivity to magnetic fields.
2 MPPC array
1 For precision measurment
(single type)
3 MPPC module
Features
Major applications
Excellent photon-counting capability
5
High gain: 10 to
106
Fluorescence analysis, fluorescence lifetime measurement
Biological flow cytometry
Low-bias (below 100 V) operation
Confocal microscopes
Insensitive to magnetic fields
Biochemical sensors
Simple readout-circuit operation
Bioluminescence analysis
Low afterpulse (compared to our previous products)
Single molecule detection
Excellent time resolution
PET
Room temperature operation
Scintillation light detection
What is the MPPC ?
The MPPC is a kind of so-called Si-PM (silicon photomultiplier) device. It
is a photon-counting device consisting of multiple APD pixels operating in
Geiger mode. Each APD pixel of the MPPC outputs a pulse signal when it
detects one photon. The signal output from the MPPC is the total sum of
the outputs from all APD pixels. The MPPC offers the high performance needed in photon
counting and is used in diverse applications for detecting- extremely weak light at the
photon-counting level.
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Product lineup
Type
Features
These are low-noise MPPCs for precision photometry. They feature high photon detection efficiency, low crosstalk, and low afterpulse. They are suitable for precision measurement, such
as flow cytometry, DNA sequencer, laser microscope, and fluorescence measurement, that
requires low noise characteristics.
They are available in two types: ceramic package and surface mount.
For precision measurement
1
(single type)
2 MPPC array
These are MPPCs with several MPPC chips arranged in an array. The CSP (Chip Size Package)
type MPPCs can be tiled together to fabricate large-area devices and can be coupled efficiently to
scintillators or the like.
3 MPPC module
MPPC modules are optical measurement modules with built-in MPPC. They can measure light
over a wide range (10 orders of magnitude) from the photon counting region to nW (nanowatt)
region. They are available in two types: non-cooled modules, which are equipped with a temperature compensation function for stable measurement, and cooled modules, which feature
low dark count.
Measurable light level ranges of MPPC modules (product examples)
(λ=450 nm)
Non-cooled type/10 μm pitch
Analog output
Non-cooled type/50 μm pitch
type
TE-cooled type/50 μm pitch
TE-cooled type/50 μm
Digital output
type
TE-cooled type/single pixel (fiber coupling type)
Number of incident photons (cps) 100
Incident light level (W) 10-18
102
104
10-15
106
10-12
108
1010
10-9
1012
10-6
KACCC0769EA
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[Photo IC]
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Highly functional devices integrating photodiodes with signal processing circuits
The photo IC is a light receiver element with various functions. It integrates a photosensitive element and a signal processing circuit into one package.
2 Light modulation photo IC
3 Illuminance sensor
1 Schmitt trigger circuit photo IC
4 Color sensor
5 Photo IC for optical link
7 Photo IC for optical
switch
6 Photo IC for encoder,
Encoder module
Features
8 Photo IC for
laser beam
synchronous
detection
9 Phototransistor
Major applications
Small and lightweight
Paper detection in office machines (copier, fax machines, etc.)
Highly resistant to noise from electromagnetic induction
Optical switch
High reliability
Light dimmers for liquid crystal panels and large-screen TV, etc.
Color adjustment for display
Plastic optical fiber communications
Encoder
HAMAMATSU photo IC technology
Offers custom designs for producing optical
Responds to sophisticated needs.
Delivers high linearity, low noise, and wide dynamic range.
Minimizes digital noise.
sensors to meet specific applications.
Merges IC design technology, CMOS circuit
Analog signal
processing circuit
technology, optical device technology, and
packaging technology.
Allows the fabrication of subminiature de-
External circuit
Minimum hardware
Minimum software
Photosensor
vices that integrate multiple functions.
Digital signal
processing
circuit
Provides spectral response
characteristics, etc. optimized
for specific needs.
Interface
Makes it easy to use photo IC.
Simplifies external
input/output terminals.
Photo IC
19
A/D converter
Simplified external circuit
reduces the total cost.
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Product lineup
Type
1
Schmitt trigger circuit
photo IC
2 Light modulation photo IC
Output
Features
Digital
Photo IC integrates a photodiode, amplifier, Schmitt trigger circuit and output transistor, etc. into one chip
Digital
Employs synchronous optical detection to ensure stable output
even under fluctuating background light
Analog/Digital
Has spectral response characteristics close to human visual
sensitivity
Photo IC for
general use
3 Illuminance sensor
4 Color sensor
Digital
Has sensitivity to red, green and blue light
Digital
(receiver photo IC)
Photo IC transmitters and receivers for plastic optical fiber communications
Digital
Uses a 4-element photodiode that can be used to easily configure an encoder with 2-phase digital output
7 Photo IC for optical switch
Digital
Has functions needed for industrial optical switches
Photo IC for laser beam
synchronous detection
Digital
For detecting laser beam print-start timing in laser printers and
digital copiers
Analog
Amplifies the photocurrent generated by input light. Allows a larger current
to be drawn even from a small active area when compared to photodiodes.
5
Photo IC for optical link
(POF)
6
Photo IC for encoder,
Encoder module
Photo IC for
special use
8
9 Phototransistor
Application examples
Hamamatsu photo ICs are widely used for many different needs.
Station ticket gate: passenger sensing
Light modulation photo IC
Air conditioner: light/dark sensing
Clocks: light/dark sensing
Illuminance sensor (Photo IC diode)
Illuminance sensor (Photo IC diode)
Factories
Safety devices
Light modulation photo IC,
Photo IC for optical switch
Detection of product passage
Light modulation photo IC,
Photo IC for optical switch
Digital copiers /
Multifunctional digital office machines
Mirror and lens positioning
Photo IC for encoder/Encoder module
Sorter leftover paper detection
Light modulation photo IC
Color toner contrast detection
Digital color sensor
Display backlight brightness adjustment
Illuminance sensor (Photo IC diode)
Paper size detection
Light modulation photo IC
Signal transmission
Transmitter/Receiver photo IC for optical link
Laser origin point detection for writing on print drum
Photo IC for laser beam synchronous detection
Remaining paper amount detection
Light modulation photo IC
Vending machine: light/dark sensing
Boiler: flame monitor
Illuminance sensor (Photo IC diode)
Illuminance sensor (Photo IC diode)
Auto lighting equipment: light/dark sensing
Auto hand washer: hand sensing
Light modulation photo IC
Illuminance sensor (Photo IC diode)
Large screen TV: light/dark sensing
Illuminance sensor (Photo IC diode)
20
[Image sensors]
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A wide lineup of image sensors suitable for spectroscopy and measurement applications
Hamamatsu provides various types of image sensors that cover a wide energy level and spectral response range from near infrared
(NIR) at 2.6 μm through visible, ultraviolet, vacuum ultraviolet (VUV) down to soft X-rays and hard X-rays at several hundred keV.
2 Back-thinned CCD area/linear image sensor
1 Front-illuminated CCD area/linear image sensor
4 CMOS linear/area
image sensor
3 NMOS linear image sensor
5 Distance linear/
area image sensor
6 InGaAs linear/area image sensor
8 X-ray image sensor
7 Photodiode array with amplifier
Features
Major applications
A wide lineup covering different wavelengths
Spectrophotometry
X-ray imaging
Scientific measurement
Obstacle detection
NIR spectrometry
Security
Example of detectable energy level and spectral response range
InGaAs linear image
sensor (long
wavelength type)
InGaAs
linear/area
image sensor
Wavelength [nm] =
1240
Distance
image sensor
Photon energy [eV]
CMOS area
image sensor
CMOS linear
image sensor
NMOS linear image sensor
(windowless type)
NMOS linear
image sensor
Back-thinned CCD
Back-thinned CCD (windowless type)
CCD for X-ray imaging
Front-il uminated CCD
Front-illuminated CCD (windowless type)
Flat panel sensor
1 MeV
100 keV
10 keV
1 keV
100 eV
10 eV
1 eV
0.1 eV
Photon energy
Wavelength
0.01 nm
21
0.1 nm
1 nm
10 nm
100 nm
1 μm
10 μm
KMPDC0105EH
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Product lineup
Product name
Features
Front-illuminated
1
CCD area/linear image sensor
Image sensors with low dark current and low
noise.
Back-thinned
CCD area/linear image sensor
Image sensors delivering high quantum efficiency
from visible to VUV region
2
Lineup
For spectrophotometry
For scientific measurement
For spectrophotometry
For scientific measurement
TDI-CCD area image sensor
Fully-depleted back-illuminated CCD
area image sensor
Current output type (standard type)
Current output type (infrared-enhanced type)
Voltage output type
Variable integration time type
High-speed readout type
High sensitivity type
Digital output type
SXGA/VGA format type
Distance linear image sensor
Distance area image sensor
For NIR spectrometry
For DWDM monitor
For NIR image detection
3 NMOS linear image sensor
Image sensors with high UV-sensitivity and excellent output linearity, making them suitable for precision photometry
4 CMOS linear/area image sensor
Image sensors integrated with signal processing circuits, making them suitable for applications
where low power consumption and downsizing of
the detector unit are essential
5 Distance linear/area image sensor
Image sensors designed to measure the distance
to an object by TOF method.
6 InGaAs linear/area image sensor
Image sensors for near infrared region. Built-in
CMOS IC allows easy operation.
7 Photodiode array with amplifier
Sensors combining a Si photodiode array and a signal
processing IC. A long, narrow image sensor can also
be configured by arranging multiple arrays in a row.
Long and narrow area type
For non-destructive inspection
8 X-ray image sensor
Image sensors and photodiode arrays delivering
high quality X-ray images by coupling FOS (FOP
coated with X-ray scintillator) or phosphor sheet.
CCD/CMOS area image sensors for
dental imaging
TDI-CCD area image sensors
Photodiode arrays with amplifier for
non-destructive inspection
Spectral response (typical example)
CCD area image sensor (without window)
100
Photosensitivity (A/W)
80
70
Back-thinned type
(UV high sensitivity)
60
50
Front-illuminated type
40
30
20
1.0
Td=25 °C
G9206-256W
Td=-10 °C
Td=-20 °C
G9205-256W
G9201 to G9204/
G9211 to G9214/
G9494 series
G9207-256W
G9208-256W
G11135/
G11620 series
0.5
Front-illuminated type
(NIR high sensitivity)
10
0
200
(Typ.)
1.5
Back-thinned
type
90
Quantum efficiency (%)
InGaAs linear image sensor
(Typ. Ta=25 °C)
400
600
800
1000
0
0.5
1200
1.0
Wavelength (nm)
1.5
2.5
2.0
3.0
Wavelength (μm)
KMPDB0276EB
KMIRB0068EC
T O P I C
InGaAs area image sensor (640 × 512 pixels) for easily capturing a near infrared image
The InGaAs area image sensor is a sensor for easily capturing a near
Visible
NIR
infrared image. An InGaAs photodiode chip is connected with ROIC,
and then each channel is readout from a shift-register. The ROIC
incorporates a timing generator, so video output can be obtained by
simple digital input.
Near-infrared imaging of color-painted wooden airplane toy makes visible the cracks, traces of resin,
and characters underneath the paint layer, etc.
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[Flat panel sensors]
F L A T
P A N E L
S E N S O R S
Capturing high-resolution, high-quality X-ray images in real-time
Flat panel sensors are digital X-ray image sensors capable of acquiring high-resolution, high-quality X-ray images in realtime. A flat panel sensor is made up of a sensor board and a control board, designed for a thin, compact configuration.
1 For radiography (rotational type)
2 For radiography (biochemical imaging)
3 For radiography (X-ray diffraction)
Major applications
CT imaging/panoramic imaging, biochemical imaging, etc.
Radiography
X-ray diffraction
Non-destructive inspection
Product lineup
Type
1
23
For radiography
(rotational type)
Pixel size
(μm)
Active area
[(H) × (V) cm]
Frame rate
(frames/s)
100
12 × 12
17 to 280
100
10 × 7
30 to 265
100
15 × 0.6
300
Features
High-speed, high-sensitivity type suitable for CT
imaging and panoramic imaging.
Supplied without case for assembly into equipment.
2
For radiography
(biochemical imaging)
50
5 × 5 to
12 × 12
1 to 4
Suitable for imaging of low-energy X-rays and compatible with X-ray sources with 17 keV Mo target
3
For radiography
(X-ray diffraction)
50
5 × 5 to
12 × 12
3
Active pixel sensor for low-noise readout and compatible with X-ray below 18 keV
[PSD (position sensitive detectors)]
P O S I T I O N
S E N S I T I V E
D E T E C T O R S
Light spot position sensors used for distance and angle measurements
A PSD is a non-discrete type position photosensor that makes use of photodiode surface resistance. It provides position
data as a continuous electrical signal and offers high position resolution, high-speed response, and high reliability.
1 One-dimensional PSD
Features
2 Two-dimensional PSD
Major applications
Excellent position resolution
Position and angle sensing
Wide spectral response range
Distortion and vibration measurements
High-speed response
Optical rangefinders
Simultaneously detects light intensity and center-of-gravity position
Optical switches
of a spot light
Precise position measurements such as laser
High reliability
displacement meters
Product lineup
Type
Lineup
Visible light cut-off type suitable for detection of near infrared light
High IR-sensitivity
1 One-dimensional PSD
Suitable for detection of microscopic spot light such as from a laser diode
Long, narrow type with active area length of 30 mm or more
2 Two-dimensional PSD
High-speed response, low dark current, superior position-detection characteristic
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[Infrared detectors]
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Product lineup to meet various needs for spectral response range
Infrared detectors are utilized in a wide range of fields such as measurement, chemical analysis, industry,
agriculture, medicine, physics and chemistry, communications, and aerospace applications.
2 PbS/PbSe
1 InGaAs PIN photodiode
3 InSb photoconductive detector/photovoltaic detector,
photoconductive
InAsSb/InAs photovoltaic detector,
detector
MCT (HgCdTe) photoconductive detector/photovoltaic detector
4 Thermopile detector
5 Two-color detector
6 Photon drag detector
■ Spectral response (typical example)
1014
Photovoltaic detectors
Photoconductive detectors
Si thermal detectors
1013
Short wavelength enhanced type InGaAs (25 °C)
Long wavelength type InGaAs (-196 °C)
D* (cm · Hz1/2/W)
1012
PbS (-20 °C)
InAs (-196 °C)
PbS (25 °C)
1011
MCT (-196 °C)
InSb (-196 °C)
MCT (-196 °C)
MCT (-196 °C)
InAsSb (-196 °C)
1010
Long wavelength type InGaAs (25 °C)
InAsSb for 8 μm Band (-30 ˚C)
109
Si (25 °C)
MCT (-60 °C)
PbSe (25 °C)
Thermopile
PbSe (-20 °C)
InAsSb (-30 °C)
108
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Wavelength (μm)
KIRDB0259EG
25
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Product lineup
Product name
Spectral response range
Features
0.5 to 1.7 μm
Major application
High-speed response
Various types of active areas, arrays and
packages available
TE-cooled type available
Optical fiber communications
Optical power meter
Gas analyzer
Water content analyzer
NIR (near infrared) photometry
1 to 3.2 μm
High detectivity
Can be used at room temperatures in a wide
range of applications such as radiation thermometers and flame monitors
Radiation thermometer
Flame monitors
Water content analyzer
Food ingredient analysis
Spectrophotometers
1 to 5.2 μm
Detects wavelengths up to 5.2 μm
Offers higher response speed at room temperatures compared to other detectors used in the
same wavelength range. Suitable for a wide
range of applications such as gas analyzers.
Radiation thermometer
Flame monitors
Gas analyzer
Film thickness gauge
1 to 6.7 μm
Detects wavelengths up to around 6.5 μm,
with high sensitivity over long periods due
to thermoelectric cooling
Environment measurements
(gas analysis, etc.)
Radiation thermometer (5 μm band)
FTIR
IR laser detection
3 InSb photovoltaic detector
1 to 5.5 μm
Suitable for CO2 and SOx (SO, SO2, SO3)
gas analysis due to high sensitivity in the 3
to 5 μm band
Covers a spectral response range close to
PbSe but offers higher response speed
3 InAsSb photovoltaic detector
1 to 8.3 μm
Infrared detector in the 5 μm or 8 μm spectral band, with high sensitivity and high reliability
1 to 3.8 μm
Covers a spectral response range close to
PbS but offers higher response speed
Gas analyzer
Infrared radiation measurement
Infrared spectrophotometry
FTIR
1 to 25 μm
Different types of spectral response ranges
are provided by changing the composition
ratio of HgTe and CdTe.
Available with thermoelectric coolers, cryogenic dewars
Thermal imaging
Remote sensing
FTIR
CO2 laser detection
Spectrophotometers
High-speed response
Low noise
FTIR
Thermal camera
Radiation thermometer
Spectrophotometers
Environmental measurement
Astronomy and space observation
Sensors that generate thermoelectromotive
force in proportion to the energy level of
incident light
Gas analysis
CO2 concentration measurement
0.9 to 1.7 μm
1 InGaAs PIN photodiode
0.9 to 1.9 μm
0.9 to 2.1 μm
0.9 to 2.6 μm
2 PbS photoconductive detector
2 PbSe photoconductive detector
3 InSb photoconductive detector
3 InAs photovoltaic detector
3
3
MCT (HgCdTe) photoconductive
detector
MCT (HgCdTe) photovoltaic
detector
4 Thermopile detector
Two-color
5
detector
1 to 13.5 μm
1 to 25 μm
Si + PbS
0.2 to 3 μm
Si + PbSe
0.2 to 4.85 μm
Si + InGaAs
0.32 to 2.55 μm
InGaAs + InGaAs
6 Photon drag detector
Wide spectral response range from UV to IR
Two-color detectors incorporate an infrared-transmitting Si photodiode mounted over a PbS detector, PbSe detector or InGaAs PIN photodiode
0.9 to 2.55 μm
A sensor made of two vertically stacked InGaAs
PIN photodiodes with different spectral ranges
10 μm
High-speed detectors with high sensitivity in
10 μm band (for CO2 laser detection)
Room temperature operation with highspeed response
Radiation thermometer
Thermal imaging
Remote sensing
Gas analyzer
FTIR
Spectrophotometers
Spectrophotometers
Laser monitors
Flame monitors
Radiation thermometer
CO2 laser detection
Infrared detection
26
[Visible light sensors]
V I S I B L E
L I G H T
S E N S O R S
Spectral response close to that of the human eye
Visible light sensors are broadly used as illuminance sensors.
1 Illuminance sensor
2 Si photodiode
3 GaAsP photodiode
■ Spectral response example (photo IC diode)
Major applications
Exposure meter, illuminometer
1.0
Cellular phone backlight dimmer
0.9
Energy-saving sensor for large-screen TV, etc.
0.8
Light dimmers for liquid crystal panels
0.7
(Typ. Ta=25 °C, VR=5 V)
Automatic lighting system
Various types of light level measurement
Relative sensitivity
Human eye sensitivity
0.6
0.5
0.4
0.3
0.2
0.1
0
200
400
600
800
1000
1200
Wavelength (nm)
KPICB0121EA
Product lineup
Type
27
Features
1 Illuminance sensor
Photo ICs with spectral response characteristics close to human visual sensitivity
2 Si photodiode
Si photodiode with a filter that corrects the spectral range to have sensitivity only in the
visible range
3 GaAsP photodiode
Compound semiconductor photosensor that delivers spectral sensitivity close to the human
eye without using any filters
[Color sensors]
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Small sensor for LCD monitoring and simple color detection
Hamamatsu provides single-color sensors that are sensitive to red, green and blue light, as well as RGB color sensors.
2 RGB color photodiode
1 Si photodiode
4 Color sensor module
3 Digital color sensor
■ Spectral response example (RGB color photodiode)
Major applications
White balance adjustment
Green
Color control, color identification
Blue
RGB-LCD backlight monitors
Light source color temperature detection
Photosensitivity (A/W)
0.20
Portable or mobile equipment
Various types of color detection
(Typ. Ta=25 °C)
0.25
0.15
Red
0.10
0.05
0
300
500
400
600
700
800
Wavelength (nm)
KSPDB0246EA
Product lineup
Type
Features
1 Si photodiode
These are color sensors designed to respectively detect monochromatic colors of blue (λp=460
nm), green (λp=540 nm) and red (λp=660 nm).
2 RGB color photodiode
These are color sensors molded into a plastic package having a 3-channel (RGB) photodiode sensitive to the blue, green and red regions of the spectrum.
3 Digital color sensor
These are color sensors sensitive to red, green, and blue light.
Detected signals are output serially as digital data.
4 Color sensor module
These modules are used for monitoring of LCD backlight colors and for simple color detection.
28
[LED]
L I G H T
E M I T T I N G
D I O D E S
Infrared LED and red LED with high output
Compared to laser diodes, LEDs offer advantages such as lower cost and longer life. Hamamatsu has developed and produced various types of LEDs that enhance emission
efficiency via a high output power LED chip mounted on a reflective package base, which makes the light emitted from the chip edges reflect towards the front.
2 For optical encoder
3 For moisture detection
4 CO2 detection
1 For optical switch
6 For optical link
7 SIP type
8 Bullet type
5 For FSO (free space optics)
Features
Major applications
High output
Optical switch
Optical rangefinder
Available in various types of packages
Encoder
Optical fiber communications
Light source for moisture meter
FSO
Product lineup
Type
1 For optical switch
Features
Infrared
Red
29
Reflector type
High output power
Ball-lens type
Narrow directivity, uniform emission pattern
Peripheral electrode type
Shadow of wire does not appear in emission pattern.
Reflector type
High output power
2 For optical encoder
Optimized lens shape allows these LEDs to emit highly collimated beams.
High reliability is obtained since these LEDs do not use a current confinement structure chip.
3 For moisture detection
Long wavelength LED with peak emission wavelengths at 1.45 μm
4 CO2 detection
Middle infrared LED with peak emission wavelength at 4.3 μm
5 For FSO
High-speed, high output power LED.
Transmitter/receiver module for VICS (Vehicle Information and Communication System) is also available.
6 For optical link
These LEDs are suitable for 50 Mbps and 125 Mbps optical link.
7 SIP type
These LEDs are high-power LEDs molded into a miniature, clear plastic package.
8 Bullet type
These LEDs are high-power LEDs encapsulated in a bullet-shaped package.
[Optical communication devices]
O P T I C A L
C O M M U N I C AT I O N
D E V I C E S
High-speed devices for optical fiber communications and FSO (free space optics)
Hamamatsu provides high-quality receiver/transmitter devices designed for long-range, high-speed communications and
short-range, low-speed communications, as well as FSO.
2 For optical data link
1 For high-speed optical fiber communications
3 For FSO
4 For optical power and
wavelength monitor
Product lineup
Type
1
For high-speed optical fiber
communications
Features
High-speed photodiodes available in a variety of packages (ROSA, metal, receptacle, pigtail).
2 For optical data link
These are light receivers and emitters suitable for medium to low speed optical links.
3 For FSO
Hamamatsu provides large area photodiodes and high-power LEDs, as well as a light emitter/receiver
module designed for vehicle-mounted VICS (Vehicle Information and Communication System).
4
For optical power and
wavelength monitor
These devices are used to monitor laser diodes or DWDM.
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[Mini-spectrometers]
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Integrating an optical system, image sensor and circuit
Hamamatsu offers a full line of mini-spectrometers that are integrated with an optical system, image sensor, and
circuit by fabricating the grating section using micromachining techniques.
1 TG series
4 FT series
2 TM series
Features
3 RC series
5 MS series
Major applications
High throughput due to transmission grating made of quartz
Evaluation of light source characteristics
Highly accurate optical characteristics
Taste analyzers
No external power supply required:
Water content measurement
Uses USB bus power (Non-cooled type, excluding CCD type)
Film thickness measurement
Low noise (Cooled type)
Semiconductor process control
Compact design for easy assembly
Low-light-level measurement such as fluorescence
Contains a wavelength conversion factor
measurement
(Data supplied only with OEM models)
Installation into measurement equipment
T O P I C
Ultra-compact (finger-tip size) spectrometer head integrating MEMS and image sensor technologies
Micro-spectrometers are ultra-compact spectrometer heads developed based on our MEMS and image sensor technologies. The adoption of a newly designed optical system has achieved a remarkably small size,
less than half the volume of the previous mini-spectrometer MS series (C10988MA-01). This product is suitable for integration into a variety of devices, such as integration into printers and hand-held color monitoring devices that require color management. It is also suitable for applications that collaborate with portable
devices, such as smartphones and tablets.
Micro-spectrometer
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Product lineup
Series
Type
High sensitivity C9404CA
High resolution C9404CAH
IR-enhanced
C9405CB
High resolution C11713CA
1 TG series
Spectral response
range
200 to 400 nm
500 to 1100 nm
C11482GA
Near IR (cooled) C9913GC
IR-enhanced back-thinned
CCD image sensor
7 nm
8 nm
Near IR (cooled) C11118GA
900 to 2550 nm
20 nm
6 nm
200 to 800 nm
Back-thinned type
CCD image sensor
IR-enhanced back-thinned
CCD image sensor
7 nm
1100 to 2200 nm
1 nm*
Wide dynamic range C10082MD
6 nm
High sensitivity C10083CA
8 nm
(320 to 900 nm)
High resolution C10083CAH
1 nm*
(320 to 900 nm)
320 to 1000 nm
InGaAs
linear image sensor
Back-thinned type
CCD image sensor
CMOS
linear image sensor
Back-thinned type
CCD image sensor
Wide dynamic range C10083MD
8 nm
CMOS
linear image sensor
Trigger-compatible C11697MB
8 nm
High-sensitivity CMOS
linear image sensor
Compact C11007MA
Compact (for installation in devices) C11009MA
Compact C11008MA
340 to 780 nm
9 nm
CMOS
linear image sensor
640 to 1050 nm
8 nm
500 to 1100 nm
3.5 nm
Ultra-compact (for installation in devices) C10988MA-01
340 to 750 nm
14 nm
Ultra-compact (for installation in devices) C11708MA
640 to 1050 nm
20 nm
Compact (for installation in devices) C11010MA
5 MS series
5 nm
(550 to 900 nm)
Near IR (cooled) C9914GB
High resolution C10082CAH
4 FT series
1 nm*
790 to 920 nm
900 to 1700 nm
Internal image sensor
Back-thinned type
CCD image sensor
500 to 600 nm
High sensitivity C10082CA
3 RC series
3 nm
0.3 nm*
High resolution C11714CB
Near IR
2 TM series
Spectral resolution
Max.
Compact, thin C13053MA
High sensitivity
CMOS linear image sensor
CMOS
linear image sensor
* Typ.
Connection example (transmission light measurement)
Light to be measured is guided into the entrance port through an optical
PC
fiber and the spectrum measured with the built-in image sensor is output
through the USB port to a PC for data acquisition. There are no moving
USB
cable
Mini-spectrometer
parts inside the unit so stable measurements are obtained at all times. An
optical fiber that guides light input from external sources allows a flexible
measurement setup.
Optical fiber for
light input
Light source
Quartz cell
KACCC0524EA
32
[Opto-semiconductor modules]
OPTO-SEMICONDUCTOR MODULES
Modules using opto-semiconductors / Circuits for operating opto-semiconductors
Hamamatsu provides a wide variety of opto-semiconductor modules developed by our own module technology capable of extracting
the maximum performance from opto-semiconductors. Custom products are also available by request. Please feel free to consult us.
2 APD module
1 MPPC module
4 Mini-spectrometer
7 PSD module
8 PSD signal
processing circuit
5 Photodiode module
6 Photosensor amplifier
11 Sunlight sensor
3 Radiation detector
module
12 Infrared detector module
with preamp
9 Flame eye
10 RGB color
sensor module
14 Peripheral product
for image sensor
13 Multichannel
detector head
Technologies that create opto-semiconductor modules
Optical technology
MEMS* technology
●Optimal optical design for high-performance modules
●Use of simulations
Optical components (filter, lens, etc.)
Opto-semiconductor
module configuration
example
* Micro-electro-mechanical systems
●High-precision micromachining
●Helps make modular components smaller and modules more functional
Housing
Opto-semiconductor
Photodiode,
image sensor,
etc.
Amp
Photosensor
Signal processing
(analog/digital)
LED
LD
Software technology
Driver
●The sample software makes swift
evaluation possible.
●USB, RS-232C, and other types of
interfaces are available.
Light emitter
Opto-semiconductor
Opto-semiconductor technology
●The detector, which is the heart of module, uses
Hamamatsu opto-semiconductor, which have a long
track record for many years in the fields of analysis,
measurement, automobiles, and consumer products.
●Custom designs are available to achieve the features you want.
33
Circuitry
Circuit technology
●Optimized for optical devices and applications
●Supports high sensitivity, low noise, high speed,
and multiple channels
Interface
Mounting technology
●Our mounting technology combines compactness,
high functionality, and low cost.
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Product lineup
Products
Features
Application example
1 MPPC module
MPPC modules are photon-counting modules that contain an
MPPC capable of detecting extermely low-level light.
Fluorescence lifetime measurement
Biological flow cytometry
Bioluminescence analysis
Low-light-level detection
2 APD module
APD modules are high-speed, high-sensitivity photodetectors using an APD (avalanche photodiode).
Low-light-level detection
Optical power meters
Laser monitors
3 Radiation detector module
These modules incorporate a scintillator and MPPC and are
designed to detect gamma-rays.
Environmental monitoring and
mapping
Screening tasks
4 Mini-spectrometer
These compact spectrometers integrate an optical system, an
image sensor, and a circuit.
Color monitoring
Film thickness measurement
Plastic sorting
5 Photodiode module
Photodiode modules are high-precision photodetectors
combining a photodiode and current-to-voltage conversion
amp. Dedicated signal processing unit is also provided.
Precision photometry
Light source power monitors
Illuminometers, color difference meters
6 Photosensor amplifier
These photosensor amplifiers are current-to-voltage conversion amplifiers for amplifying photocurrent with low noise.
Precision photometry
Optical power meters
Illuminometers
7 PSD module
PSD modules are high-precision position-detectors combining a
PSD and current-to-voltage conversion amp. Dedicated signal
processing unit is also provided.
Optical axis alignment
Rangefinder
3D measurement
8 PSD signal processing circuit
These are signal processing circuits for evaluation of PSDs.
Performance evaluation of PSD
9 Flame eye
The flame eye is a sensor that monitors flames in oil boilers
and heating equipment.
Flame detection in oil boilers
and heaters
10 RGB color sensor module
These modules have built-in RGB color sensor.
RGB-LED backlight monitor for TFT-LCD
11 Sunlight sensor
Sunlight sensors detect the light level of sunlight and ambient
light. A photodiode with superb linearity relative to the light
level is built in a small case with a connector.
Ambient light detection
Automatic lighting sensors
12 Infrared detector module with preamp
These modules integrate an infrared detector and a preamp.
Infrared detection
13 Multichannel detector head
Multichannel detector heads incorporate a driver circuit designed
for various types of image sensors (CCD area image sensors,
InGaAs linear image sensors, NMOS linear image sensors). Controller for multichannel detector head is also available.
Spectrophotometer
Raman spectroscopy
Semiconductor inspection
Radiation thermometry
Driver circuit and pulse generator that are designed to match
the CCD image sensor and CMOS/NMOS/InGaAs linear image
sensor types are provided.
Multichannel spectrophotometry
14
Peripheral product for
image sensor
T O P I C
Subminiature, low power consumption MEMS mirrors
We provide miniature electromagnetic mirrors that incorporate our
Optical principle
unique MEMS technology. Within a magnetic field generated by the
magnet, electrical current flowing in the coil surrounding the mirror
Incident
laser
Force
produces a Lorentz force based on Fleming’s rule that drives the
mirror. Hamamatsu MEMS mirrors offer a wide optical deflection
nt
rre
Cu
nt
rre
Cu
angle and high mirror reflectivity as well as low power consumption.
Ma
gn
et
Force
Magnetic
field
34
Factory/Research laboratory/Domestic sales office
Toyooka factory
Miyakoda factory
Mikkabi IC
Nishinihon
sales office
Industries
development
laboratory
Sendai
sales office
Osaka
sales office
Mitsue
factory
Central research
laboratory
Tomei express way
Main factory
(Ichino)
Hamamatsu nishi IC
Joko factory
Tsukuba labolatory
Tsukuba sales office
Hamamatsu IC
Tenno glass
works
Tokyo branch office
Lake
Hamana
Hamamatsu
Lake Sanaru
JR Tokaido line
Hamamatsu
station
JR Tokaido
Shinkansen line
Headquarters
Chubu sales office
Shingai
Factories
Opto-semiconductors : Main factory (Ichino), Mitsue factory,
Shingai factory
Electron tube products : Toyooka factory, Tenno glass works
Beijing Hamamatsu photon techniques Ltd. (China)
System products
: Joko factory
Laser products
: Miyakoda factory
factory
the Sea of Enshu
Tenryu River
Laboratories
Central research laboratory
Tsukuba research laboratory
Industries development laboratory
Domestic sales offices
Tokyo sales office
Osaka sales office
Main factory (Ichino)
Chubu sales office
Sendai sales office
Mitsue factory
Tsukuba sales office
Nishinihon sales office
Shingai factory
Annual sales
Solid state division
26544
79235
2010
35139
90732
2011
40000
85108
2012
38137
80937
2013
36751
92583
2014
35
Entire company
61518
2009
43298
0
10000
20000
30000
40000
50000
60000
70000
80000
90000
100000
(million yen)
Organization chart of solid state division
Management
General Affairs
Bussiness Promotion
Administration
Quality Control
The 1st Develop. Group Software
Development
The 2nd Develop. Group Module
The 3rd, 5th Develop. Group CMOS integrated circuit
The 1st Mfg.
The 2nd Dept.
Infrared detector
The 11th Dept.
LED, NIR photodiode, optical communication device
Compound Process Group Compound semiconductor wafer process
The 2nd Mfg.
The 3rd Mfg.
The 4th Mfg.
The 5th Mfg.
The 6th Mfg.
The 7th Mfg.
The 3rd Dept.
Si photodiode for X-ray detection
The 30th Dept.
Si photodiode, Si APD, PSD, MPPC, SSD
The 36th Dept.
Photo IC, Si photodiode, PSD, LED (plastic package)
The 34th Dept.
Area image sensor
The 41st Dept.
Linear image sensor
The 46th Dept.
Circuit for image sensor
The 29th Dept.
Light measurement module & unit
The 32nd Dept.
Photosensor module
The 44th Dept.
X-ray image sensor
The 45th Dept.
Flat panel sensor
The 51st Dept.
MEMS products, SLM
Process mgt Group Equipment and machinery engineering
Production headquarter
Assembly mgt Group Equipment and machinery engineering
Facility mgt Group Facility management and maintenance
Si Wafer Process
MEMS
Mitsue Mfg.
Shingai Mfg.
Process Production Group Si wafer process
MEMS Process Group MEMS process
MEMS Develop. Group
The 1st Assembly Group Assembly, inspection
Production Technology Group Production technology, equipment technology
The 1st Assembly Group Mass product assembly
36
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1, Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558, Japan
Telephone: (81)53-434-3311, Fax: (81)53-434-5184
www.hamamatsu.com
Main Products
Opto-semiconductors
Si photodiodes
APD
MPPC
Photo IC
Image sensors
PSD
Infrared detectors
LED
Optical communication devices
Automotive devices
X-ray flat panel sensors
Mini-spectrometers
Opto-semiconductor modules
Electron Tubes
Photomultiplier Tubes
Photomultiplier Tube Modules
Microchannel Plates
Image Intensifiers
Xenon Lamps / Mercury Xenon Lamps
Deuterium Lamps
Light Source Applied Products
Laser Applied Products
Microfocus X-ray Sources
X-ray Imaging Devices
Imaging and Processing Systems
Cameras / Image Processing Measuring Systems
X-ray Products
Life Science Systems
Medical Systems
Semiconductor Failure Analysis Systems
FPD / LED Characteristic Evaluation Systems
Spectroscopic and Optical Measurement Systems
Laser Products
Semiconductor lasers
Applied products of semiconductor lasers
Solid state lasers
Sales Offices
Japan:
HAMAMATSU PHOTONICS K.K.
325-6, Sunayama-cho, Naka-ku,
Hamamatsu City, Shizuoka Pref. 430-8587, Japan
Telephone: (81)53-452-2141, Fax: (81)53-456-7889
E-mail: [email protected]
Belgian Office
Axisparc Technology, rue Andre Dumont 7 1435
Mont-Saint-Guibert, Belgium
Telephone: (32)10 45 63 34
Fax: (32)10 45 63 67
E-mail: [email protected]
China:
HAMAMATSU PHOTONICS (CHINA) Co., Ltd.
Main Office
1201 Tower B, Jiaming Center, 27 Dongsanhuan Beilu,
Chaoyang District, 100020 Beijing, China
Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866
E-mail: [email protected]
Spanish Office
C. Argenters, 4 edif 2 Parque Tecnológico del Vallés
08290 Cerdanyola (Barcelona), Spain
Telephone: (34)93 582 44 30
Fax: (34)93 582 44 31
E-mail: [email protected]
Shanghai Branch
4905 Wheelock Square, 1717 Nanjing Road West, Jingan
District, 200040 Shanghai, China
Telephone: (86)21-6089-7018, Fax: (86)21-6089-7017
U.S.A.:
HAMAMATSU CORPORATION
Main Office
360 Foothill Road, Bridgewater, NJ 08807, U.S.A.
Telephone: (1)908-231-0960, Fax: (1)908-231-1218
E-mail: [email protected]
Information in this catalogue is
believed to be reliable. However,
no responsibility is assumed for
possible inaccuracies or omissions.
Specifications are subject to
change without notice. No patent
rights are granted to any of the
circuits described herein.
Danish Office
Lautruphøj 1-3, DK-2750 Ballerup, Denmark
Telephone: (45)70-20-93-69, Fax: (45)44-20-99-10
Email: [email protected]
California Office
2875 Moorpark Ave. San Jose, CA 95128, U.S.A.
Telephone: (1)408-261-2022, Fax: (1)408-261-2522
E-mail: [email protected]
Netherlands Office
Televisieweg 2, NL-1322 AC Almere, The Netherlands
Telephone: (31)36-5405384, Fax: (31)36-5244948
E-mail: [email protected]
Chicago Office
4711 Golf Road, Suite 805, Skokie, IL 60076, U.S.A.
Telephone: (1)847-725-6046, Fax: (1)847-825-2189
E-mail: [email protected]
Poland Office
02-525 Warsaw, 8 St. A. Boboli Str., Poland
Telephone: (48)22-646-0016, Fax: (48)22-646-0018
E-mail: [email protected]
Boston Office
20 Park Plaza, Suite 312, Boston, MA 02116, U.S.A.
Telephone: (1)617-536-9900, Fax: (1)408-261-2522
E-mail: [email protected]
North Europe and CIS:
HAMAMATSU PHOTONICS NORDEN AB
Main Office
Torshamnsgatan 35 16440 Kista, Sweden
Telephone: (46)8-509 031 00, Fax: (46)8-509 031 01
E-mail: [email protected]
United Kingdom:
HAMAMATSU PHOTONICS UK Limited
Main Office
2 Howard Court, 10 Tewin Road, Welwyn Garden City,
Hertfordshire AL7 1BW, UK
Telephone: (44)1707-294888, Fax: (44)1707-325777
E-mail: [email protected]
South Africa Office:
PO Box 1112, Buccleuch 2066, Johannesburg,
South Africa
Telephone/Fax: (27)11-802-5505
MPPC is the registered trademark of
Hamamatsu Photonics K.K.
(Japan, U.S.A, EU, Switzerland)
Germany, Denmark, The Netherlands, Poland:
HAMAMATSU PHOTONICS DEUTSCHLAND GmbH.
Main Office
Arzbergerstr. 10, D-82211 Herrsching am Ammersee,
Germany
Telephone: (49)8152-375-0, Fax: (49)8152-265-8
E-mail: [email protected]
France, Portugal, Belgium, Switzerland, Spain:
HAMAMATSU PHOTONICS FRANCE S.A.R.L.
Main Office
19, Rue du Saule Trapu Parc du Moulin de Massy,
91882 Massy Cedex, France
Telephone: (33)1 69 53 71 00
Fax: (33)1 69 53 71 10
E-mail: [email protected]
Russian Office
11, Christoprudny Boulevard, Building 1, Office 114,
101000, Moscow, Russia
Telephone: (7)495 258 85 18, Fax: (7)495 258 85 19
E-mail: [email protected]
Italy:
HAMAMATSU PHOTONICS ITALIA S.r.l.
Main Office
Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy
Telephone: (39)02-935-81-733, Fax: (39)02-935-81-741
E-mail: [email protected]
Rome Office
Viale Cesare Pavese, 435, 00144 Roma, Italy
Telephone: (39)06-50513454, Fax: (39)06-50513460
E-mail: [email protected]
Swiss Office
Dornacherplatz 7 4500 Solothurn, Switzerland
Telephone: (41)32-625-60-60,
Fax: (41)32-625-60-61
E-mail: [email protected]
© 2015 Hamamatsu Photonics K.K.
Quality, technology, and service
are part of every product.
Cat. No. KOTH0001E15
Mar. 2015 DN
Printed in Japan (2,500)
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