Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that time, Hamamatsu has developed and produced a wide range of opto-semiconductors such as photodiodes, photo ICs, image sensors, and LEDs, as well as mini-spectrometers and many other products using opto-semiconductors. Our lineup of opto-semiconductors covers a broad spectrum from the infrared through the visible and ultraviolet regions, extending to X-rays and even high energy particles. These are widely used in many fields ranging from scientific measurements, medical diagnosis, communications, and consumer electronics as well as in-vehicle applications. In the days ahead, besides improving our semiconductor process and mounting/packaging technologies to make them more sophisticated, we will fully utilize MOEMS (micro-opto-electro-mechanical systems) technology that merges photonics technology with MEMS technology to develop opto-semiconductors with even higher sensitivity, speeds, and functions. Koei Yamamoto Representative Director and Senior Managing Director Director of Solid State Division Hamamatsu Photonics K. K. Contents Applications of Hamamatsu opto-semiconductors ..................................... 3 - 5 Opto-semiconductor selection guide .................................................... 6 - 8 Manufacturing process of opto-semiconductors ................................. 9 - 12 Map / Annual sales / Organization chart ............................................35 - 36 1 Opto-semiconductors evolving with the advancement of MOEMS technology MEMS technology Compact Highly functional High reliability Etching Nanoimprint Three-dimensional mounting technology MOEMS devices ∙ Semiconductor micromachining to produce mechanical parts, optical elements, sensors, and wafer level packages Downsize, integration Module technology Semiconductor process technology Assembly technology Si process Various packages Optics Compound semiconductor process Assembly ∙ Optimum optical design and effective simulation ∙ Wide spectral range (UV/visible/infrared, X-ray, high energy) ∙ High sensitivity, high-speed response ∙ Highly functional devices based on CMOS circuit technology Analysis ∙ General-purpose and highly reliable packages, surface mount type, CSP, flip-chip bonding ∙ Flexible customization ∙ Ready for low- and high-volume production Circuitry ∙ Analog and digital circuits, ASIC, FPGA Opto-semiconductor devices Software ∙ Supports various interfaces Hamamatsu opto-semiconductors Si photodiodes ....................... 13 Si APD ................................... 15 MPPC® ................................... 17 Photo IC ................................ 19 Image sensors ....................... 21 - 14 16 18 20 22 Flat panel sensors ......................... 23 PSD (position sensitive detectors) ... 24 Infrared detectors .................. 25 - 26 Visible light sensors ....................... 27 Color sensors ................................ 28 LED .............................................. 29 Optical communication devices ....... 30 Mini-spectrometers ................. 31 - 32 Opto-semiconductor modules .. 33 - 34 2 Applications of Hamamatsu opto-semiconductors Hamamatsu opto-semiconductors have been used in wide-ranging fields including communications, industry and general electronics as well as medical and scientific applications. LCD color adjustment Automotive applications RGB color sensors detect the brightness and color temperature of room light and adjusts the display colors. Our automotive devices are widely used in vehicles. (In-vehicle LAN, ambient light level detection, day/night detection, windshield rain sensors, laser radars, multi-function jog dials, pedestrian protection systems, glare-proof mirrors, etc.) RGB color sensors ©Frank Boston-Fotolia.com X-ray non-destructive inspection Dental X-ray imaging Our Si photodiodes are widely used as detectors in X-ray baggage inspection systems. CCD area image sensors are used in panoramic/cephalometric imaging equipment for dental diagnosis. Si photodiode arrays 3 CCD area image sensors Optical communications Rangefinders We provide light transmitter and receiver devices for optical fiber communications and FSO (free space optics). Si APD and PIN photodiodes are used in surveying instruments for distance measurement. Automotive devices Si APD Optical communication related devices ©Nmedia-Fotolia.com Subaru Telescope [by courtesy of NAOJ (National Astronomical Observatory of Japan)] Flat panel sensor 4 Astronomical observation Photon counting The world’s highest sensitivity CCDs manufactured by Hamamatsu are installed in the Suprime Cam/Subaru Prime Focus Camera of the Subaru Telescope at the summit of Mauna Kea, Hawaii. The MPPC is used in diverse applications for detecting extremely weak light at the photon-counting level. CCD area image sensor Applications of Hamamatsu opto-semiconductors Industrial robots Semiconductor manufacturing equipment Infrared LED and Si PIN photodiode arrays are used to configure encoders built into robots for position control. Back-thinned TDI-CCD image sensors are used for wafer defect inspections. Infrared LED Si PIN photodiode arrays Back-thinned TDI-CCD image sensors ©Zoe-Fotolia.com CMS project (by courtesy of CERN) High energy experiments MPPC The European Organization for Nuclear Research (CERN) in Switzerland is conducting a project involving the Large Hadron Collider (LHC). The Si strip detector by HAMAMATSU is being used as the particle track detector in the collider, and is detecting particle tracks with a precision on the order of several tens of μm. Si strip detector Si APD 5 Opto-semiconductor selection guide High energy particle X-ray UV Visible Point sensor Near IR Photosensor IR Photon counter 2D Image sensor Im 1D Segmented type Position sensor P Non-segmented type Light emitter Visible IR 6 [Product name] 7 [Applications] SSD High energy physics, nuclear medicine, industrial measurement Si photodiode for X-ray Baggage inspection, non-destructive inspection, medical use Si photodiode for UV light Pollution analysis, spectroscopy, medical use, UV detection, colorimetry Schottky type GaAsP photodiode Pollution analysis, spectroscopy, colorimetry, UV detection Schottky type GaP photodiode UV detection Si photodiode with compensation filter Illuminometry, copiers, color sensors Diffusion type GaAsP photodiode Illuminometry, flame eyes (monitors) Illuminance sensor Energy-saving sensors for TV and the like, light dimmers for liquid crystal panels, backlight dimmers for cell phones, light level measurements Color sensor Display color adjustment, color detection Si photodiode Optical communication devices, information equipment, automatic control systems, general electronics, car electronics, photometric equipment, medical equipment, high energy physics Si APD (avalanche photodiode) Optical communication devices, information equipment, automatic control systems, general electronics, car electronics, photometric equipment, medical equipment, high energy physics Photo IC Optical switches, office automation equipment, rotary encoders, optical fiber communications IR-enhanced Si photodiode/Si APD YAG laser monitoring, near infrared detection InGaAs PIN photodiode Optical communication device, IR laser monitoring, radiation thermometry, industrial measurement PbS/PbSe photoconductive detector Radiation thermometry, flame eyes, moisture analysis, gas analysis, spectroscopy InSb photoconductive detector, InSb/InAs/InAsSb photovoltaic detector IR laser detection, spectroscopy, radiation thermometry, gas analysis, FTIR, thermal imaging MCT (HgCdTe) photoconductive/ photovoltaic detector Thermal imaging, radiation thermometry, FTIR, gas analysis, CO2 laser detection Photon drag detector CO2 laser detection Thermopile detector Radiation thermometry, gas analysis, flame eyes MPPC Medical equipment, nuclear medicine, high energy physics, radiation measurement Area image sensor Fluorescence spectroscopy, Raman spectroscopy, scientific measurement, X-ray imaging, near infrared imaging X-ray image sensor Radiography, non-destructive inspection Flat panel sensor Radiography, X-ray diffractometers, non-destructive inspection Linear image sensor Multichannel spectroscopy, spectrum analysis, optical measurement Photodiode array Multichannel spectroscopy, color analysis, spectrum analysis, position detection Multi-element photodiode Position detection PSD (position sensitive detector) Rangefinding, displacement sensing, laser optics, automatic control systems, high energy physics Red LED Optical switches, optical fiber communications Infrared LED Optical switches, light sources for measurement devices, optical communication devices, automatic control systems, rotary encoding Mini-spectrometer, Mini Module product photosensor amplifier, phot APD module, etc. Selection guide by wavelength Spectral range Wavelength UV Visible 0.2 0.4 Near IR 0.6 0.8 1 Middle IR 2 4 Far IR 6 8 10 20 (μm) Si GaAsP GaP Photosensor InGaAs PbS PbSe InAs InAsSb InSb MCT Light emitter Thermopile detector GaAs LED GaAlAs LED AlGaInP LED 8 Manufacturing process of opto-semiconductors Design Design for new products Design for custom products Epitaxial growth process [Typical compound semiconductor fabrication process] [Example of custom orders] Electrical and optical characteristics Active area Number of elements Package Reliability Wafer process [Typical process of Si photodiode fabrication] Thin-film crystal growth under ultra-high vacuum in MBE equipment Oxidation Thin-film crystal growth with MOCVD equipment Photolithography Etching Photomask Resist SiO 2 Si SiO 2 Resist Si SiO 2 Si Si wafer (before process) Thin films are formed on wafers by oxidation or CVD process. Device patterns are formed by photolithographic technique. Selective etching is performed on the thin film on wafers. Manufacturing technologies Semiconductor process technologies Hamamatsu has been manufacturing a wide range of opto-semiconductors using our unique wafer process technologies. PIN bipolar process Back-thinned CCD process Fabricates high-speed photodiodes by integrating a PIN photodiode and high-speed signal processing circuits onto a single chip. CMOS process Compound process The integration of circuit functions in photodetectors helps to achieve high performance, multifunctionality, and cost reduction in systems. Utilizing compound semiconductor process technologies that include MBE, MOCVD, and dry etching techniques optimized for precision processing, we have been developing high-performance devices for optical communications, chemical analysis, and measurement. Product examples produced using our CMOS process Product examples produced using our compound semiconductor process Digital color sensors 9 Back-thinned CCD area image sensors have a very thin photosensitive layer for high sensitivity yet low dark current. CMOS image sensors InGaAs APD InGaAs linear image sensors Main factory (Ichino) Ion implantation Metallization Wafer inspection Ion Metal SiO 2 Si Metal SiO 2 SiO 2 Si Diffusion layer Diffusion layer Si Diffusion layer To assembly process Doping impurities are injected into wafers. Metal pattern is formed. Devices on the wafer are inspected electrically and optically. MEMS technologies Hamamatsu is developing highly functional opto-semiconductors using a wide range of MEMS technologies. Etching Etching is a basic semiconductor process technology. MEMS technology utilizes anisotropic etching and sacrificial layer etching as well as conventional etching techniques to provide versatile functions impossible to achieve by conventional optosemiconductors. V groove formed by anisotropic etching Nanoimprint Nanoimprint is a technology for fabricating fine structures at a high throughput. Light curing resin is applied to a substrate upon which a master substrate with a fine structure is then pressed. Light is then irradiated to transfer the nanoscale structure to the resin. Actuators formed by sacrificial layer etching (bulk micromaching) 3D mount technology 3D mount technology can be broadly grouped into “electrode technology” for fabricating structures with 3D electrical connections and “bonding technology” for making wafer level packages. Electrode technology is essential for achieving more sophisticated functions and smaller size opto-semiconductors. Electrode technology involves techniques for forming Si through-hole electrodes to extract electrodes from the backside of devices and flip-chip bonding to make electrical connections between different materials. Bonding technology includes anodic bonding and room-temperature bonding that need no adhesives and that apply direct sealing on devices to achieve ultra-small packages. Nanoimprint 20 μm pitch indium bump electrodes 10 Assembly process [Typical process] Die bonding Dicing Metal package Blade dicing Chips are bonded to metal bases. Die bonding Ceramic package Wafers are cut by a spinning blade. Stealth dicing Chips are bonded to ceramic bases. Die bonding Plastic package A laser cuts a wafer by irradiating the interior of the wafer. Chips are bonded to lead frames. Dicing Bump forming Blade dicing Chip size package or Stealth dicing Gold bumps are formed on wafers. Manufacturing technologies Mounting/packaging technologies Hamamatsu offers a variety of package types to meet diverse market needs. For example, metal packages are widely used in applications requiring high reliability. Ceramic packages are used in general applications. Plastic packages are suitable for high-volume applications where lower cost is essential. Special packages include rectangular metal packages designed for use with thermoelectrically-cooled CCD area image sensors. Many different types of surface mount packages are also available. COB (chip on board) devices and thin plastic package devices are ideal especially for applications where small, thin devices are needed. What's more, photodiode/scintillator combination devices are available that detect X-rays or radiation by converting them into visible light. TO-CAN metal 11 Rectangular metal Mitsue factory (Assembly factory) Shingai factory (Assembly factory) Ceramic Surface mount type ceramic Test Cap sealing Wire-bonding Electrical & optical test Metal package test equipment Chips are connected to metal bases using gold wires. Metal caps are welded to metal bases. Resin encapsulation Wire-bonding Chips are connected to ceramic bases using gold wires. Plastic package test equipment Resin is injected into ceramic bases. Electrical & optical characteristics are tested. Resin molding and trimming Wire-bonding Appearance inspection Appearance inspection system Chips are connected to lead frames using gold wires. Resin is molded along lead frames and chips. X-ray & appearance inspection system Flip chip bonding Underfill filling Chips with bumps are bonded to substrates by being flipped (inverted). The space between the substrate and chip is filled in with resin. Glass epoxy board Plastic The appearances of finished products are inspected. Long and narrow type Chip size package Cross section example of TSV Glass Insulating film Photodiode, IC chip Wiring TSV With scintillator With flexible cable Solder bump TSV (through silicon via) technology 12 [Si photodiodes] S i P H O T O D I O D E S Product lineup for wide-ranging applications Si photodiodes are used in various applications covering optical fiber communications, copiers, analytical instruments and baggage inspection, and are available in various packages including metal, ceramic and plastic packages, as well as surface mount packages. 1 Si photodiode 2 Si PIN photodiode 4 Si photodiode with preamp 5 TE-cooled type Si photodiode 3 Multi-element type Si photodiode 6 Si photodiode for X-ray Features Major applications Excellent linearity with respect to incident light Analytical instrument Low noise General photometry Wide spectral response range Baggage inspection Mechanically rugged Optical fiber communications Compact and lightweight Long life Spectral response (typical example) S1226/S1336-8BQ, S1227/S1337-1010BR S3590-19, S3759, S9219 (Typ. Ta=25 ºC) 0.8 (Typ. Ta=25 ºC) 0.8 QE=100% S1336-8BQ (For UV to NIR) 0.7 0.6 0.7 S1337-1010BR (For UV to NIR) Photosensitivity (A/W) Photosensitivity (A/W) QE=100% 0.5 0.4 0.3 0.2 S1226-8BQ (IR sensitivity suppressed) 0.1 0 200 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) S3590-19 (high violet sensitivity) 0.4 0.3 S9219 (visible-sensitive compensated) 0.2 0 200 300 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) KSPDB0300EC 13 0.5 0.1 S1227-1010BR (IR sensitivity suppressed) 300 S3759 (for YAG laser) 0.6 KSPDB0301EC S i P H O T O D I O D E S Product lineup Product name Product examples 1 Si photodiode For UV to near IR range For visible to near IR range For visible range RGB color sensor For VUV (vacuum ultraviolet) detection For monochromatic light detection For electron beam detection 2 Si PIN photodiode Cutoff frequency: 1 GHz or more Cutoff frequency: 500 MHz to less than 1 GHz Cutoff frequency: 100 MHz to less than 500 MHz Cutoff frequency: 10 MHz to less than 100 MHz IR-enhanced type For YAG laser detection 3 Multi-element type Si photodiode Segmented type photodiode One-dimensional, two-dimensional photodiode array 4 Si photodiode with preamp 5 TE-cooled type Si photodiode For analytical instrument and precision measurement 6 Si photodiode for X-ray With scintillator Large photosensitive area type Photodiode module To make our photodiodes easier to use, we offer a variety of modules. Product name Features Photodiode module These modules are high-precision photodetectors integrating a Si photodiode or InGaAs photodiode with a current-to-voltage conversion amplifier into a compact case. Dedicated controller is also provided (sold separately). Photosenser amplifier Photosensor amplifiers are current-to-voltage conversion amplifiers used to amplify very slight photocurrent from a photodiode with very low noise. T O P I C These Si PIN photodiodes offer high sensitivity in the near infrared region via MEMS technology. They have both high-speed response and high sensitivity in the near infrared region which have been difficult to achieve up to now by conventional methods. IR-enhanced Si PIN photodiode ■ Spectral response example (Typ. Ta=25 °C) 0.8 QE=100% Photosensitivity (A/W) Si PIN photodiodes with enhanced near-infrared sensitivity made by MEMS technology 0.6 0.4 Previous type 0.2 IR-enhanced Si PIN photodiode S11499 series 0 200 400 600 800 1000 1200 Wavelength (nm) KPINB0374EC 14 [Si APD] S i A V A L A N C H E P H O T O D I O D E S High-speed, high-sensitivity photodiodes with an internal gain mechanism APD (avalanche photodiodes) are high-speed, high-sensitivity photodiodes that internally amplify photocurrent by the application of a reverse voltage. Delivers a higher S/N than PIN photodiodes and is widely used in optical rangefinders, FSO (free space optics), scintillation detectors, etc. 1 Short wavelength type 2 Near infrared type Features Major applications Excellent linearity with respect to incident light Low-light-level detection Low noise Analytical instrument Wide spectral response range FSO Mechanically rugged Optical rangefinder Compact and lightweight Optical fiber communications Long life Laser radar YAG laser detection Spectral response 55 High Near infrared type (low bias operation) 40 Near infrared type (low temperature coefficient) 35 Short wavelength type (low bias operation) Short wavelength type 20 (low terminal capacitance) 15 10 0 200 400 600 800 400 Near infrared type (1000 nm band/high sensitivity) Short wavelength type (low terminal capacitance) 600 Short wavelength type (low bias operation) Near infrared type (900 nm band, low terminal capacitance) Low 0 1000 1200 200 400 600 800 1000 1200 Wavelength (nm) Wavelength (nm) KAPDB0096EG 15 Near infrared type (low bias operation, low temperature coefficient) 200 Near infrared type (900 nm band, low terminal capacitance) 5 1000 800 Cutoff frequency (MHz) Photosensitivity (A/W) 45 25 (Compared using devices with 0.5 mm photosensitive area) IR-enhanced type (1000 nm band/high sensitivity) 50 30 Cutoff frequency vs. recommended wavelength (Typ. Ta=25 °C, M=50, λ=650 nm) KAPDB0162ED S i A V A L A N C H E P H O T O D I O D E S Product lineup Type Recommended wavelength Package 200 to 650 nm Metal Low-bias operation 1 Short wavelength type Low terminal capacitance Features Enhanced sensitivity in the UV to visible range Metal, ceramic 320 to 650 nm High sensitivity in near infrared region and low bias voltage operation Metal Low-bias operation 600 to 800 nm Surface mount type 2 Near infrared type Low-cost, miniature and thin package Low temperature coefficient 600 to 800 nm Metal Easy voltage adjustment due to low temperature coefficient of bias voltage 900 nm band, low terminal capacitance 800 to 1000 nm Metal Enhanced sensitivity in 900 nm band 1000 nm band/ high sensitivity 900 to 1150 nm Metal Enhanced sensitivity in 1000 nm band APD modules These modules consist of an APD, low-noise amplifier, and bias power supply integrated in a compact package. Type Features Standard type Contains a near infrared or short wavelength type APD. FC/SMA fiber adapters are also provided. Sensitivity vs. response speed (APD modules) 109 C12703-01 DC to 100 kHz -1.5 × 10 8 V/W 108 High-sensitivity type High gain type for detection under low illuminance High-stability type High-speed type Operates over a wide range of frequencies (up to 1 GHz) Sensitivity (V/W) C10508-01 Digital temperature-compensation, high-stability APD module 107 DC to 10 MHz 2.5 × 106 to 1.25 × 107 V/W 106 DC to 10 MHz 1.5 × 10 6 V/W C12703 C5658 50 kHz to 1 GHz 2.5 × 105 V/W 105 C12702 series 4 types are available according to photosensitive area size and wavelength range. 4 kHz to 100 MHz -1 × 104 V/W 104 103 DC 10 100 1k 10 k 100 k 1M 10 M 100 M 1G Response speed (Hz) KACCB0115EF 16 [MPPC ®] M U L T I - P I X E L P H O T O N C O U N T E R S Compact opto-semiconductors with excellent photon-counting capability The MPPC (multi-pixel photon counter) is a new type of photon-counting device made up of multiple APD (avalanche photodiode) pixels operated in Geiger mode. The MPPC is essentially an opto-semiconductor device with excellent photon-counting capability and which also possesses great advantages such as low-voltage operation and insensitivity to magnetic fields. 2 MPPC array 1 For precision measurment (single type) 3 MPPC module Features Major applications Excellent photon-counting capability 5 High gain: 10 to 106 Fluorescence analysis, fluorescence lifetime measurement Biological flow cytometry Low-bias (below 100 V) operation Confocal microscopes Insensitive to magnetic fields Biochemical sensors Simple readout-circuit operation Bioluminescence analysis Low afterpulse (compared to our previous products) Single molecule detection Excellent time resolution PET Room temperature operation Scintillation light detection What is the MPPC ? The MPPC is a kind of so-called Si-PM (silicon photomultiplier) device. It is a photon-counting device consisting of multiple APD pixels operating in Geiger mode. Each APD pixel of the MPPC outputs a pulse signal when it detects one photon. The signal output from the MPPC is the total sum of the outputs from all APD pixels. The MPPC offers the high performance needed in photon counting and is used in diverse applications for detecting- extremely weak light at the photon-counting level. R 17 M U L T I - P I X E L P H O T O N C O U N T E R S Product lineup Type Features These are low-noise MPPCs for precision photometry. They feature high photon detection efficiency, low crosstalk, and low afterpulse. They are suitable for precision measurement, such as flow cytometry, DNA sequencer, laser microscope, and fluorescence measurement, that requires low noise characteristics. They are available in two types: ceramic package and surface mount. For precision measurement 1 (single type) 2 MPPC array These are MPPCs with several MPPC chips arranged in an array. The CSP (Chip Size Package) type MPPCs can be tiled together to fabricate large-area devices and can be coupled efficiently to scintillators or the like. 3 MPPC module MPPC modules are optical measurement modules with built-in MPPC. They can measure light over a wide range (10 orders of magnitude) from the photon counting region to nW (nanowatt) region. They are available in two types: non-cooled modules, which are equipped with a temperature compensation function for stable measurement, and cooled modules, which feature low dark count. Measurable light level ranges of MPPC modules (product examples) (λ=450 nm) Non-cooled type/10 μm pitch Analog output Non-cooled type/50 μm pitch type TE-cooled type/50 μm pitch TE-cooled type/50 μm Digital output type TE-cooled type/single pixel (fiber coupling type) Number of incident photons (cps) 100 Incident light level (W) 10-18 102 104 10-15 106 10-12 108 1010 10-9 1012 10-6 KACCC0769EA 18 [Photo IC] P H O T O I C Highly functional devices integrating photodiodes with signal processing circuits The photo IC is a light receiver element with various functions. It integrates a photosensitive element and a signal processing circuit into one package. 2 Light modulation photo IC 3 Illuminance sensor 1 Schmitt trigger circuit photo IC 4 Color sensor 5 Photo IC for optical link 7 Photo IC for optical switch 6 Photo IC for encoder, Encoder module Features 8 Photo IC for laser beam synchronous detection 9 Phototransistor Major applications Small and lightweight Paper detection in office machines (copier, fax machines, etc.) Highly resistant to noise from electromagnetic induction Optical switch High reliability Light dimmers for liquid crystal panels and large-screen TV, etc. Color adjustment for display Plastic optical fiber communications Encoder HAMAMATSU photo IC technology Offers custom designs for producing optical Responds to sophisticated needs. Delivers high linearity, low noise, and wide dynamic range. Minimizes digital noise. sensors to meet specific applications. Merges IC design technology, CMOS circuit Analog signal processing circuit technology, optical device technology, and packaging technology. Allows the fabrication of subminiature de- External circuit Minimum hardware Minimum software Photosensor vices that integrate multiple functions. Digital signal processing circuit Provides spectral response characteristics, etc. optimized for specific needs. Interface Makes it easy to use photo IC. Simplifies external input/output terminals. Photo IC 19 A/D converter Simplified external circuit reduces the total cost. P H O T O I C Product lineup Type 1 Schmitt trigger circuit photo IC 2 Light modulation photo IC Output Features Digital Photo IC integrates a photodiode, amplifier, Schmitt trigger circuit and output transistor, etc. into one chip Digital Employs synchronous optical detection to ensure stable output even under fluctuating background light Analog/Digital Has spectral response characteristics close to human visual sensitivity Photo IC for general use 3 Illuminance sensor 4 Color sensor Digital Has sensitivity to red, green and blue light Digital (receiver photo IC) Photo IC transmitters and receivers for plastic optical fiber communications Digital Uses a 4-element photodiode that can be used to easily configure an encoder with 2-phase digital output 7 Photo IC for optical switch Digital Has functions needed for industrial optical switches Photo IC for laser beam synchronous detection Digital For detecting laser beam print-start timing in laser printers and digital copiers Analog Amplifies the photocurrent generated by input light. Allows a larger current to be drawn even from a small active area when compared to photodiodes. 5 Photo IC for optical link (POF) 6 Photo IC for encoder, Encoder module Photo IC for special use 8 9 Phototransistor Application examples Hamamatsu photo ICs are widely used for many different needs. Station ticket gate: passenger sensing Light modulation photo IC Air conditioner: light/dark sensing Clocks: light/dark sensing Illuminance sensor (Photo IC diode) Illuminance sensor (Photo IC diode) Factories Safety devices Light modulation photo IC, Photo IC for optical switch Detection of product passage Light modulation photo IC, Photo IC for optical switch Digital copiers / Multifunctional digital office machines Mirror and lens positioning Photo IC for encoder/Encoder module Sorter leftover paper detection Light modulation photo IC Color toner contrast detection Digital color sensor Display backlight brightness adjustment Illuminance sensor (Photo IC diode) Paper size detection Light modulation photo IC Signal transmission Transmitter/Receiver photo IC for optical link Laser origin point detection for writing on print drum Photo IC for laser beam synchronous detection Remaining paper amount detection Light modulation photo IC Vending machine: light/dark sensing Boiler: flame monitor Illuminance sensor (Photo IC diode) Illuminance sensor (Photo IC diode) Auto lighting equipment: light/dark sensing Auto hand washer: hand sensing Light modulation photo IC Illuminance sensor (Photo IC diode) Large screen TV: light/dark sensing Illuminance sensor (Photo IC diode) 20 [Image sensors] I M A G E S E N S O R S A wide lineup of image sensors suitable for spectroscopy and measurement applications Hamamatsu provides various types of image sensors that cover a wide energy level and spectral response range from near infrared (NIR) at 2.6 μm through visible, ultraviolet, vacuum ultraviolet (VUV) down to soft X-rays and hard X-rays at several hundred keV. 2 Back-thinned CCD area/linear image sensor 1 Front-illuminated CCD area/linear image sensor 4 CMOS linear/area image sensor 3 NMOS linear image sensor 5 Distance linear/ area image sensor 6 InGaAs linear/area image sensor 8 X-ray image sensor 7 Photodiode array with amplifier Features Major applications A wide lineup covering different wavelengths Spectrophotometry X-ray imaging Scientific measurement Obstacle detection NIR spectrometry Security Example of detectable energy level and spectral response range InGaAs linear image sensor (long wavelength type) InGaAs linear/area image sensor Wavelength [nm] = 1240 Distance image sensor Photon energy [eV] CMOS area image sensor CMOS linear image sensor NMOS linear image sensor (windowless type) NMOS linear image sensor Back-thinned CCD Back-thinned CCD (windowless type) CCD for X-ray imaging Front-il uminated CCD Front-illuminated CCD (windowless type) Flat panel sensor 1 MeV 100 keV 10 keV 1 keV 100 eV 10 eV 1 eV 0.1 eV Photon energy Wavelength 0.01 nm 21 0.1 nm 1 nm 10 nm 100 nm 1 μm 10 μm KMPDC0105EH I M A G E S E N S O R S Product lineup Product name Features Front-illuminated 1 CCD area/linear image sensor Image sensors with low dark current and low noise. Back-thinned CCD area/linear image sensor Image sensors delivering high quantum efficiency from visible to VUV region 2 Lineup For spectrophotometry For scientific measurement For spectrophotometry For scientific measurement TDI-CCD area image sensor Fully-depleted back-illuminated CCD area image sensor Current output type (standard type) Current output type (infrared-enhanced type) Voltage output type Variable integration time type High-speed readout type High sensitivity type Digital output type SXGA/VGA format type Distance linear image sensor Distance area image sensor For NIR spectrometry For DWDM monitor For NIR image detection 3 NMOS linear image sensor Image sensors with high UV-sensitivity and excellent output linearity, making them suitable for precision photometry 4 CMOS linear/area image sensor Image sensors integrated with signal processing circuits, making them suitable for applications where low power consumption and downsizing of the detector unit are essential 5 Distance linear/area image sensor Image sensors designed to measure the distance to an object by TOF method. 6 InGaAs linear/area image sensor Image sensors for near infrared region. Built-in CMOS IC allows easy operation. 7 Photodiode array with amplifier Sensors combining a Si photodiode array and a signal processing IC. A long, narrow image sensor can also be configured by arranging multiple arrays in a row. Long and narrow area type For non-destructive inspection 8 X-ray image sensor Image sensors and photodiode arrays delivering high quality X-ray images by coupling FOS (FOP coated with X-ray scintillator) or phosphor sheet. CCD/CMOS area image sensors for dental imaging TDI-CCD area image sensors Photodiode arrays with amplifier for non-destructive inspection Spectral response (typical example) CCD area image sensor (without window) 100 Photosensitivity (A/W) 80 70 Back-thinned type (UV high sensitivity) 60 50 Front-illuminated type 40 30 20 1.0 Td=25 °C G9206-256W Td=-10 °C Td=-20 °C G9205-256W G9201 to G9204/ G9211 to G9214/ G9494 series G9207-256W G9208-256W G11135/ G11620 series 0.5 Front-illuminated type (NIR high sensitivity) 10 0 200 (Typ.) 1.5 Back-thinned type 90 Quantum efficiency (%) InGaAs linear image sensor (Typ. Ta=25 °C) 400 600 800 1000 0 0.5 1200 1.0 Wavelength (nm) 1.5 2.5 2.0 3.0 Wavelength (μm) KMPDB0276EB KMIRB0068EC T O P I C InGaAs area image sensor (640 × 512 pixels) for easily capturing a near infrared image The InGaAs area image sensor is a sensor for easily capturing a near Visible NIR infrared image. An InGaAs photodiode chip is connected with ROIC, and then each channel is readout from a shift-register. The ROIC incorporates a timing generator, so video output can be obtained by simple digital input. Near-infrared imaging of color-painted wooden airplane toy makes visible the cracks, traces of resin, and characters underneath the paint layer, etc. 22 [Flat panel sensors] F L A T P A N E L S E N S O R S Capturing high-resolution, high-quality X-ray images in real-time Flat panel sensors are digital X-ray image sensors capable of acquiring high-resolution, high-quality X-ray images in realtime. A flat panel sensor is made up of a sensor board and a control board, designed for a thin, compact configuration. 1 For radiography (rotational type) 2 For radiography (biochemical imaging) 3 For radiography (X-ray diffraction) Major applications CT imaging/panoramic imaging, biochemical imaging, etc. Radiography X-ray diffraction Non-destructive inspection Product lineup Type 1 23 For radiography (rotational type) Pixel size (μm) Active area [(H) × (V) cm] Frame rate (frames/s) 100 12 × 12 17 to 280 100 10 × 7 30 to 265 100 15 × 0.6 300 Features High-speed, high-sensitivity type suitable for CT imaging and panoramic imaging. Supplied without case for assembly into equipment. 2 For radiography (biochemical imaging) 50 5 × 5 to 12 × 12 1 to 4 Suitable for imaging of low-energy X-rays and compatible with X-ray sources with 17 keV Mo target 3 For radiography (X-ray diffraction) 50 5 × 5 to 12 × 12 3 Active pixel sensor for low-noise readout and compatible with X-ray below 18 keV [PSD (position sensitive detectors)] P O S I T I O N S E N S I T I V E D E T E C T O R S Light spot position sensors used for distance and angle measurements A PSD is a non-discrete type position photosensor that makes use of photodiode surface resistance. It provides position data as a continuous electrical signal and offers high position resolution, high-speed response, and high reliability. 1 One-dimensional PSD Features 2 Two-dimensional PSD Major applications Excellent position resolution Position and angle sensing Wide spectral response range Distortion and vibration measurements High-speed response Optical rangefinders Simultaneously detects light intensity and center-of-gravity position Optical switches of a spot light Precise position measurements such as laser High reliability displacement meters Product lineup Type Lineup Visible light cut-off type suitable for detection of near infrared light High IR-sensitivity 1 One-dimensional PSD Suitable for detection of microscopic spot light such as from a laser diode Long, narrow type with active area length of 30 mm or more 2 Two-dimensional PSD High-speed response, low dark current, superior position-detection characteristic 24 [Infrared detectors] I N F R A R E D D E T E C T Product lineup to meet various needs for spectral response range Infrared detectors are utilized in a wide range of fields such as measurement, chemical analysis, industry, agriculture, medicine, physics and chemistry, communications, and aerospace applications. 2 PbS/PbSe 1 InGaAs PIN photodiode 3 InSb photoconductive detector/photovoltaic detector, photoconductive InAsSb/InAs photovoltaic detector, detector MCT (HgCdTe) photoconductive detector/photovoltaic detector 4 Thermopile detector 5 Two-color detector 6 Photon drag detector ■ Spectral response (typical example) 1014 Photovoltaic detectors Photoconductive detectors Si thermal detectors 1013 Short wavelength enhanced type InGaAs (25 °C) Long wavelength type InGaAs (-196 °C) D* (cm · Hz1/2/W) 1012 PbS (-20 °C) InAs (-196 °C) PbS (25 °C) 1011 MCT (-196 °C) InSb (-196 °C) MCT (-196 °C) MCT (-196 °C) InAsSb (-196 °C) 1010 Long wavelength type InGaAs (25 °C) InAsSb for 8 μm Band (-30 ˚C) 109 Si (25 °C) MCT (-60 °C) PbSe (25 °C) Thermopile PbSe (-20 °C) InAsSb (-30 °C) 108 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Wavelength (μm) KIRDB0259EG 25 O R S I N F R A R E D D E T E C T O R S Product lineup Product name Spectral response range Features 0.5 to 1.7 μm Major application High-speed response Various types of active areas, arrays and packages available TE-cooled type available Optical fiber communications Optical power meter Gas analyzer Water content analyzer NIR (near infrared) photometry 1 to 3.2 μm High detectivity Can be used at room temperatures in a wide range of applications such as radiation thermometers and flame monitors Radiation thermometer Flame monitors Water content analyzer Food ingredient analysis Spectrophotometers 1 to 5.2 μm Detects wavelengths up to 5.2 μm Offers higher response speed at room temperatures compared to other detectors used in the same wavelength range. Suitable for a wide range of applications such as gas analyzers. Radiation thermometer Flame monitors Gas analyzer Film thickness gauge 1 to 6.7 μm Detects wavelengths up to around 6.5 μm, with high sensitivity over long periods due to thermoelectric cooling Environment measurements (gas analysis, etc.) Radiation thermometer (5 μm band) FTIR IR laser detection 3 InSb photovoltaic detector 1 to 5.5 μm Suitable for CO2 and SOx (SO, SO2, SO3) gas analysis due to high sensitivity in the 3 to 5 μm band Covers a spectral response range close to PbSe but offers higher response speed 3 InAsSb photovoltaic detector 1 to 8.3 μm Infrared detector in the 5 μm or 8 μm spectral band, with high sensitivity and high reliability 1 to 3.8 μm Covers a spectral response range close to PbS but offers higher response speed Gas analyzer Infrared radiation measurement Infrared spectrophotometry FTIR 1 to 25 μm Different types of spectral response ranges are provided by changing the composition ratio of HgTe and CdTe. Available with thermoelectric coolers, cryogenic dewars Thermal imaging Remote sensing FTIR CO2 laser detection Spectrophotometers High-speed response Low noise FTIR Thermal camera Radiation thermometer Spectrophotometers Environmental measurement Astronomy and space observation Sensors that generate thermoelectromotive force in proportion to the energy level of incident light Gas analysis CO2 concentration measurement 0.9 to 1.7 μm 1 InGaAs PIN photodiode 0.9 to 1.9 μm 0.9 to 2.1 μm 0.9 to 2.6 μm 2 PbS photoconductive detector 2 PbSe photoconductive detector 3 InSb photoconductive detector 3 InAs photovoltaic detector 3 3 MCT (HgCdTe) photoconductive detector MCT (HgCdTe) photovoltaic detector 4 Thermopile detector Two-color 5 detector 1 to 13.5 μm 1 to 25 μm Si + PbS 0.2 to 3 μm Si + PbSe 0.2 to 4.85 μm Si + InGaAs 0.32 to 2.55 μm InGaAs + InGaAs 6 Photon drag detector Wide spectral response range from UV to IR Two-color detectors incorporate an infrared-transmitting Si photodiode mounted over a PbS detector, PbSe detector or InGaAs PIN photodiode 0.9 to 2.55 μm A sensor made of two vertically stacked InGaAs PIN photodiodes with different spectral ranges 10 μm High-speed detectors with high sensitivity in 10 μm band (for CO2 laser detection) Room temperature operation with highspeed response Radiation thermometer Thermal imaging Remote sensing Gas analyzer FTIR Spectrophotometers Spectrophotometers Laser monitors Flame monitors Radiation thermometer CO2 laser detection Infrared detection 26 [Visible light sensors] V I S I B L E L I G H T S E N S O R S Spectral response close to that of the human eye Visible light sensors are broadly used as illuminance sensors. 1 Illuminance sensor 2 Si photodiode 3 GaAsP photodiode ■ Spectral response example (photo IC diode) Major applications Exposure meter, illuminometer 1.0 Cellular phone backlight dimmer 0.9 Energy-saving sensor for large-screen TV, etc. 0.8 Light dimmers for liquid crystal panels 0.7 (Typ. Ta=25 °C, VR=5 V) Automatic lighting system Various types of light level measurement Relative sensitivity Human eye sensitivity 0.6 0.5 0.4 0.3 0.2 0.1 0 200 400 600 800 1000 1200 Wavelength (nm) KPICB0121EA Product lineup Type 27 Features 1 Illuminance sensor Photo ICs with spectral response characteristics close to human visual sensitivity 2 Si photodiode Si photodiode with a filter that corrects the spectral range to have sensitivity only in the visible range 3 GaAsP photodiode Compound semiconductor photosensor that delivers spectral sensitivity close to the human eye without using any filters [Color sensors] C O L O R S E N S O R S Small sensor for LCD monitoring and simple color detection Hamamatsu provides single-color sensors that are sensitive to red, green and blue light, as well as RGB color sensors. 2 RGB color photodiode 1 Si photodiode 4 Color sensor module 3 Digital color sensor ■ Spectral response example (RGB color photodiode) Major applications White balance adjustment Green Color control, color identification Blue RGB-LCD backlight monitors Light source color temperature detection Photosensitivity (A/W) 0.20 Portable or mobile equipment Various types of color detection (Typ. Ta=25 °C) 0.25 0.15 Red 0.10 0.05 0 300 500 400 600 700 800 Wavelength (nm) KSPDB0246EA Product lineup Type Features 1 Si photodiode These are color sensors designed to respectively detect monochromatic colors of blue (λp=460 nm), green (λp=540 nm) and red (λp=660 nm). 2 RGB color photodiode These are color sensors molded into a plastic package having a 3-channel (RGB) photodiode sensitive to the blue, green and red regions of the spectrum. 3 Digital color sensor These are color sensors sensitive to red, green, and blue light. Detected signals are output serially as digital data. 4 Color sensor module These modules are used for monitoring of LCD backlight colors and for simple color detection. 28 [LED] L I G H T E M I T T I N G D I O D E S Infrared LED and red LED with high output Compared to laser diodes, LEDs offer advantages such as lower cost and longer life. Hamamatsu has developed and produced various types of LEDs that enhance emission efficiency via a high output power LED chip mounted on a reflective package base, which makes the light emitted from the chip edges reflect towards the front. 2 For optical encoder 3 For moisture detection 4 CO2 detection 1 For optical switch 6 For optical link 7 SIP type 8 Bullet type 5 For FSO (free space optics) Features Major applications High output Optical switch Optical rangefinder Available in various types of packages Encoder Optical fiber communications Light source for moisture meter FSO Product lineup Type 1 For optical switch Features Infrared Red 29 Reflector type High output power Ball-lens type Narrow directivity, uniform emission pattern Peripheral electrode type Shadow of wire does not appear in emission pattern. Reflector type High output power 2 For optical encoder Optimized lens shape allows these LEDs to emit highly collimated beams. High reliability is obtained since these LEDs do not use a current confinement structure chip. 3 For moisture detection Long wavelength LED with peak emission wavelengths at 1.45 μm 4 CO2 detection Middle infrared LED with peak emission wavelength at 4.3 μm 5 For FSO High-speed, high output power LED. Transmitter/receiver module for VICS (Vehicle Information and Communication System) is also available. 6 For optical link These LEDs are suitable for 50 Mbps and 125 Mbps optical link. 7 SIP type These LEDs are high-power LEDs molded into a miniature, clear plastic package. 8 Bullet type These LEDs are high-power LEDs encapsulated in a bullet-shaped package. [Optical communication devices] O P T I C A L C O M M U N I C AT I O N D E V I C E S High-speed devices for optical fiber communications and FSO (free space optics) Hamamatsu provides high-quality receiver/transmitter devices designed for long-range, high-speed communications and short-range, low-speed communications, as well as FSO. 2 For optical data link 1 For high-speed optical fiber communications 3 For FSO 4 For optical power and wavelength monitor Product lineup Type 1 For high-speed optical fiber communications Features High-speed photodiodes available in a variety of packages (ROSA, metal, receptacle, pigtail). 2 For optical data link These are light receivers and emitters suitable for medium to low speed optical links. 3 For FSO Hamamatsu provides large area photodiodes and high-power LEDs, as well as a light emitter/receiver module designed for vehicle-mounted VICS (Vehicle Information and Communication System). 4 For optical power and wavelength monitor These devices are used to monitor laser diodes or DWDM. 30 [Mini-spectrometers] M I N I - S P E C T R O M E T E R S Integrating an optical system, image sensor and circuit Hamamatsu offers a full line of mini-spectrometers that are integrated with an optical system, image sensor, and circuit by fabricating the grating section using micromachining techniques. 1 TG series 4 FT series 2 TM series Features 3 RC series 5 MS series Major applications High throughput due to transmission grating made of quartz Evaluation of light source characteristics Highly accurate optical characteristics Taste analyzers No external power supply required: Water content measurement Uses USB bus power (Non-cooled type, excluding CCD type) Film thickness measurement Low noise (Cooled type) Semiconductor process control Compact design for easy assembly Low-light-level measurement such as fluorescence Contains a wavelength conversion factor measurement (Data supplied only with OEM models) Installation into measurement equipment T O P I C Ultra-compact (finger-tip size) spectrometer head integrating MEMS and image sensor technologies Micro-spectrometers are ultra-compact spectrometer heads developed based on our MEMS and image sensor technologies. The adoption of a newly designed optical system has achieved a remarkably small size, less than half the volume of the previous mini-spectrometer MS series (C10988MA-01). This product is suitable for integration into a variety of devices, such as integration into printers and hand-held color monitoring devices that require color management. It is also suitable for applications that collaborate with portable devices, such as smartphones and tablets. Micro-spectrometer 31 M I N I - S P E C T R O M E T E R S Product lineup Series Type High sensitivity C9404CA High resolution C9404CAH IR-enhanced C9405CB High resolution C11713CA 1 TG series Spectral response range 200 to 400 nm 500 to 1100 nm C11482GA Near IR (cooled) C9913GC IR-enhanced back-thinned CCD image sensor 7 nm 8 nm Near IR (cooled) C11118GA 900 to 2550 nm 20 nm 6 nm 200 to 800 nm Back-thinned type CCD image sensor IR-enhanced back-thinned CCD image sensor 7 nm 1100 to 2200 nm 1 nm* Wide dynamic range C10082MD 6 nm High sensitivity C10083CA 8 nm (320 to 900 nm) High resolution C10083CAH 1 nm* (320 to 900 nm) 320 to 1000 nm InGaAs linear image sensor Back-thinned type CCD image sensor CMOS linear image sensor Back-thinned type CCD image sensor Wide dynamic range C10083MD 8 nm CMOS linear image sensor Trigger-compatible C11697MB 8 nm High-sensitivity CMOS linear image sensor Compact C11007MA Compact (for installation in devices) C11009MA Compact C11008MA 340 to 780 nm 9 nm CMOS linear image sensor 640 to 1050 nm 8 nm 500 to 1100 nm 3.5 nm Ultra-compact (for installation in devices) C10988MA-01 340 to 750 nm 14 nm Ultra-compact (for installation in devices) C11708MA 640 to 1050 nm 20 nm Compact (for installation in devices) C11010MA 5 MS series 5 nm (550 to 900 nm) Near IR (cooled) C9914GB High resolution C10082CAH 4 FT series 1 nm* 790 to 920 nm 900 to 1700 nm Internal image sensor Back-thinned type CCD image sensor 500 to 600 nm High sensitivity C10082CA 3 RC series 3 nm 0.3 nm* High resolution C11714CB Near IR 2 TM series Spectral resolution Max. Compact, thin C13053MA High sensitivity CMOS linear image sensor CMOS linear image sensor * Typ. Connection example (transmission light measurement) Light to be measured is guided into the entrance port through an optical PC fiber and the spectrum measured with the built-in image sensor is output through the USB port to a PC for data acquisition. There are no moving USB cable Mini-spectrometer parts inside the unit so stable measurements are obtained at all times. An optical fiber that guides light input from external sources allows a flexible measurement setup. Optical fiber for light input Light source Quartz cell KACCC0524EA 32 [Opto-semiconductor modules] OPTO-SEMICONDUCTOR MODULES Modules using opto-semiconductors / Circuits for operating opto-semiconductors Hamamatsu provides a wide variety of opto-semiconductor modules developed by our own module technology capable of extracting the maximum performance from opto-semiconductors. Custom products are also available by request. Please feel free to consult us. 2 APD module 1 MPPC module 4 Mini-spectrometer 7 PSD module 8 PSD signal processing circuit 5 Photodiode module 6 Photosensor amplifier 11 Sunlight sensor 3 Radiation detector module 12 Infrared detector module with preamp 9 Flame eye 10 RGB color sensor module 14 Peripheral product for image sensor 13 Multichannel detector head Technologies that create opto-semiconductor modules Optical technology MEMS* technology ●Optimal optical design for high-performance modules ●Use of simulations Optical components (filter, lens, etc.) Opto-semiconductor module configuration example * Micro-electro-mechanical systems ●High-precision micromachining ●Helps make modular components smaller and modules more functional Housing Opto-semiconductor Photodiode, image sensor, etc. Amp Photosensor Signal processing (analog/digital) LED LD Software technology Driver ●The sample software makes swift evaluation possible. ●USB, RS-232C, and other types of interfaces are available. Light emitter Opto-semiconductor Opto-semiconductor technology ●The detector, which is the heart of module, uses Hamamatsu opto-semiconductor, which have a long track record for many years in the fields of analysis, measurement, automobiles, and consumer products. ●Custom designs are available to achieve the features you want. 33 Circuitry Circuit technology ●Optimized for optical devices and applications ●Supports high sensitivity, low noise, high speed, and multiple channels Interface Mounting technology ●Our mounting technology combines compactness, high functionality, and low cost. O P T O - S E M I C O N D U C T O R M O D U L E S Product lineup Products Features Application example 1 MPPC module MPPC modules are photon-counting modules that contain an MPPC capable of detecting extermely low-level light. Fluorescence lifetime measurement Biological flow cytometry Bioluminescence analysis Low-light-level detection 2 APD module APD modules are high-speed, high-sensitivity photodetectors using an APD (avalanche photodiode). Low-light-level detection Optical power meters Laser monitors 3 Radiation detector module These modules incorporate a scintillator and MPPC and are designed to detect gamma-rays. Environmental monitoring and mapping Screening tasks 4 Mini-spectrometer These compact spectrometers integrate an optical system, an image sensor, and a circuit. Color monitoring Film thickness measurement Plastic sorting 5 Photodiode module Photodiode modules are high-precision photodetectors combining a photodiode and current-to-voltage conversion amp. Dedicated signal processing unit is also provided. Precision photometry Light source power monitors Illuminometers, color difference meters 6 Photosensor amplifier These photosensor amplifiers are current-to-voltage conversion amplifiers for amplifying photocurrent with low noise. Precision photometry Optical power meters Illuminometers 7 PSD module PSD modules are high-precision position-detectors combining a PSD and current-to-voltage conversion amp. Dedicated signal processing unit is also provided. Optical axis alignment Rangefinder 3D measurement 8 PSD signal processing circuit These are signal processing circuits for evaluation of PSDs. Performance evaluation of PSD 9 Flame eye The flame eye is a sensor that monitors flames in oil boilers and heating equipment. Flame detection in oil boilers and heaters 10 RGB color sensor module These modules have built-in RGB color sensor. RGB-LED backlight monitor for TFT-LCD 11 Sunlight sensor Sunlight sensors detect the light level of sunlight and ambient light. A photodiode with superb linearity relative to the light level is built in a small case with a connector. Ambient light detection Automatic lighting sensors 12 Infrared detector module with preamp These modules integrate an infrared detector and a preamp. Infrared detection 13 Multichannel detector head Multichannel detector heads incorporate a driver circuit designed for various types of image sensors (CCD area image sensors, InGaAs linear image sensors, NMOS linear image sensors). Controller for multichannel detector head is also available. Spectrophotometer Raman spectroscopy Semiconductor inspection Radiation thermometry Driver circuit and pulse generator that are designed to match the CCD image sensor and CMOS/NMOS/InGaAs linear image sensor types are provided. Multichannel spectrophotometry 14 Peripheral product for image sensor T O P I C Subminiature, low power consumption MEMS mirrors We provide miniature electromagnetic mirrors that incorporate our Optical principle unique MEMS technology. Within a magnetic field generated by the magnet, electrical current flowing in the coil surrounding the mirror Incident laser Force produces a Lorentz force based on Fleming’s rule that drives the mirror. Hamamatsu MEMS mirrors offer a wide optical deflection nt rre Cu nt rre Cu angle and high mirror reflectivity as well as low power consumption. Ma gn et Force Magnetic field 34 Factory/Research laboratory/Domestic sales office Toyooka factory Miyakoda factory Mikkabi IC Nishinihon sales office Industries development laboratory Sendai sales office Osaka sales office Mitsue factory Central research laboratory Tomei express way Main factory (Ichino) Hamamatsu nishi IC Joko factory Tsukuba labolatory Tsukuba sales office Hamamatsu IC Tenno glass works Tokyo branch office Lake Hamana Hamamatsu Lake Sanaru JR Tokaido line Hamamatsu station JR Tokaido Shinkansen line Headquarters Chubu sales office Shingai Factories Opto-semiconductors : Main factory (Ichino), Mitsue factory, Shingai factory Electron tube products : Toyooka factory, Tenno glass works Beijing Hamamatsu photon techniques Ltd. (China) System products : Joko factory Laser products : Miyakoda factory factory the Sea of Enshu Tenryu River Laboratories Central research laboratory Tsukuba research laboratory Industries development laboratory Domestic sales offices Tokyo sales office Osaka sales office Main factory (Ichino) Chubu sales office Sendai sales office Mitsue factory Tsukuba sales office Nishinihon sales office Shingai factory Annual sales Solid state division 26544 79235 2010 35139 90732 2011 40000 85108 2012 38137 80937 2013 36751 92583 2014 35 Entire company 61518 2009 43298 0 10000 20000 30000 40000 50000 60000 70000 80000 90000 100000 (million yen) Organization chart of solid state division Management General Affairs Bussiness Promotion Administration Quality Control The 1st Develop. Group Software Development The 2nd Develop. Group Module The 3rd, 5th Develop. Group CMOS integrated circuit The 1st Mfg. The 2nd Dept. Infrared detector The 11th Dept. LED, NIR photodiode, optical communication device Compound Process Group Compound semiconductor wafer process The 2nd Mfg. The 3rd Mfg. The 4th Mfg. The 5th Mfg. The 6th Mfg. The 7th Mfg. The 3rd Dept. Si photodiode for X-ray detection The 30th Dept. Si photodiode, Si APD, PSD, MPPC, SSD The 36th Dept. Photo IC, Si photodiode, PSD, LED (plastic package) The 34th Dept. Area image sensor The 41st Dept. Linear image sensor The 46th Dept. Circuit for image sensor The 29th Dept. Light measurement module & unit The 32nd Dept. Photosensor module The 44th Dept. X-ray image sensor The 45th Dept. Flat panel sensor The 51st Dept. MEMS products, SLM Process mgt Group Equipment and machinery engineering Production headquarter Assembly mgt Group Equipment and machinery engineering Facility mgt Group Facility management and maintenance Si Wafer Process MEMS Mitsue Mfg. Shingai Mfg. Process Production Group Si wafer process MEMS Process Group MEMS process MEMS Develop. Group The 1st Assembly Group Assembly, inspection Production Technology Group Production technology, equipment technology The 1st Assembly Group Mass product assembly 36 HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1, Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558, Japan Telephone: (81)53-434-3311, Fax: (81)53-434-5184 www.hamamatsu.com Main Products Opto-semiconductors Si photodiodes APD MPPC Photo IC Image sensors PSD Infrared detectors LED Optical communication devices Automotive devices X-ray flat panel sensors Mini-spectrometers Opto-semiconductor modules Electron Tubes Photomultiplier Tubes Photomultiplier Tube Modules Microchannel Plates Image Intensifiers Xenon Lamps / Mercury Xenon Lamps Deuterium Lamps Light Source Applied Products Laser Applied Products Microfocus X-ray Sources X-ray Imaging Devices Imaging and Processing Systems Cameras / Image Processing Measuring Systems X-ray Products Life Science Systems Medical Systems Semiconductor Failure Analysis Systems FPD / LED Characteristic Evaluation Systems Spectroscopic and Optical Measurement Systems Laser Products Semiconductor lasers Applied products of semiconductor lasers Solid state lasers Sales Offices Japan: HAMAMATSU PHOTONICS K.K. 325-6, Sunayama-cho, Naka-ku, Hamamatsu City, Shizuoka Pref. 430-8587, Japan Telephone: (81)53-452-2141, Fax: (81)53-456-7889 E-mail: [email protected] Belgian Office Axisparc Technology, rue Andre Dumont 7 1435 Mont-Saint-Guibert, Belgium Telephone: (32)10 45 63 34 Fax: (32)10 45 63 67 E-mail: [email protected] China: HAMAMATSU PHOTONICS (CHINA) Co., Ltd. Main Office 1201 Tower B, Jiaming Center, 27 Dongsanhuan Beilu, Chaoyang District, 100020 Beijing, China Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected] Spanish Office C. Argenters, 4 edif 2 Parque Tecnológico del Vallés 08290 Cerdanyola (Barcelona), Spain Telephone: (34)93 582 44 30 Fax: (34)93 582 44 31 E-mail: [email protected] Shanghai Branch 4905 Wheelock Square, 1717 Nanjing Road West, Jingan District, 200040 Shanghai, China Telephone: (86)21-6089-7018, Fax: (86)21-6089-7017 U.S.A.: HAMAMATSU CORPORATION Main Office 360 Foothill Road, Bridgewater, NJ 08807, U.S.A. Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Information in this catalogue is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Danish Office Lautruphøj 1-3, DK-2750 Ballerup, Denmark Telephone: (45)70-20-93-69, Fax: (45)44-20-99-10 Email: [email protected] California Office 2875 Moorpark Ave. San Jose, CA 95128, U.S.A. Telephone: (1)408-261-2022, Fax: (1)408-261-2522 E-mail: [email protected] Netherlands Office Televisieweg 2, NL-1322 AC Almere, The Netherlands Telephone: (31)36-5405384, Fax: (31)36-5244948 E-mail: [email protected] Chicago Office 4711 Golf Road, Suite 805, Skokie, IL 60076, U.S.A. Telephone: (1)847-725-6046, Fax: (1)847-825-2189 E-mail: [email protected] Poland Office 02-525 Warsaw, 8 St. A. Boboli Str., Poland Telephone: (48)22-646-0016, Fax: (48)22-646-0018 E-mail: [email protected] Boston Office 20 Park Plaza, Suite 312, Boston, MA 02116, U.S.A. Telephone: (1)617-536-9900, Fax: (1)408-261-2522 E-mail: [email protected] North Europe and CIS: HAMAMATSU PHOTONICS NORDEN AB Main Office Torshamnsgatan 35 16440 Kista, Sweden Telephone: (46)8-509 031 00, Fax: (46)8-509 031 01 E-mail: [email protected] United Kingdom: HAMAMATSU PHOTONICS UK Limited Main Office 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, UK Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected] South Africa Office: PO Box 1112, Buccleuch 2066, Johannesburg, South Africa Telephone/Fax: (27)11-802-5505 MPPC is the registered trademark of Hamamatsu Photonics K.K. (Japan, U.S.A, EU, Switzerland) Germany, Denmark, The Netherlands, Poland: HAMAMATSU PHOTONICS DEUTSCHLAND GmbH. Main Office Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany Telephone: (49)8152-375-0, Fax: (49)8152-265-8 E-mail: [email protected] France, Portugal, Belgium, Switzerland, Spain: HAMAMATSU PHOTONICS FRANCE S.A.R.L. Main Office 19, Rue du Saule Trapu Parc du Moulin de Massy, 91882 Massy Cedex, France Telephone: (33)1 69 53 71 00 Fax: (33)1 69 53 71 10 E-mail: [email protected] Russian Office 11, Christoprudny Boulevard, Building 1, Office 114, 101000, Moscow, Russia Telephone: (7)495 258 85 18, Fax: (7)495 258 85 19 E-mail: [email protected] Italy: HAMAMATSU PHOTONICS ITALIA S.r.l. Main Office Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy Telephone: (39)02-935-81-733, Fax: (39)02-935-81-741 E-mail: [email protected] Rome Office Viale Cesare Pavese, 435, 00144 Roma, Italy Telephone: (39)06-50513454, Fax: (39)06-50513460 E-mail: [email protected] Swiss Office Dornacherplatz 7 4500 Solothurn, Switzerland Telephone: (41)32-625-60-60, Fax: (41)32-625-60-61 E-mail: [email protected] © 2015 Hamamatsu Photonics K.K. Quality, technology, and service are part of every product. Cat. No. KOTH0001E15 Mar. 2015 DN Printed in Japan (2,500)