PANASONIC MA704WA

Schottky Barrier Diodes (SBD)
MA3X704D, MA3X704E (MA704WA, MA704WK)
Silicon epitaxial planar type
Unit: mm
For switching
For wave detection
0.40+0.10
–0.05
0.16+0.10
–0.06
1.9±0.1
2.90+0.20
–0.05
1.1+0.2
–0.1
Symbol
Rating
Unit
VR
30
V
Peak reverse voltage
IFM
150
mA
Single
Double *
Forward current (DC)
Single
0 to 0.1
Parameter
EIAJ: SC-59
Mini3-G1 Package
110
IF
30
Double *
20
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
MA3X704D
1 Cathode
2 Cathode
3 Anode
MA3X704E
Anode
Anode
Cathode
Marking Symbol
• MA3X704D: M2P • MA3X704E: M2R
mA
Junction temperature
1.1+0.3
–0.1
10˚
■ Absolute Maximum Ratings Ta = 25°C
Reverse voltage (DC)
0.4±0.2
2
1
(0.95) (0.95)
(0.65)
• Two MA3X704A (MA704A) is contained in one package
• Low forward voltage VF and good wave detection efficiency η
• Small temperature coefficient of forward characteristic
• Small reverse current IR
• Mini type 3-pin package
5˚
■ Features
2.8+0.2
–0.3
1.50+0.25
–0.05
3
Internal Connection
3
3
Note) *: Value per chip
1
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
1
2
D
Min
Typ
E
2
Max
Unit
Reverse current (DC)
IR
VR = 30 V
1
µA
Forward voltage (DC)
VF1
IF = 1 mA
0.4
V
VF2
IF = 30 mA
Terminal capacitance
Ct
VR = 1 V, f = 1 MHz
1.5
pF
Reverse recovery time *
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1.0
ns
Detection efficiency
η
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
1.0
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: January 2002
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
SKH00074BED
1
MA3X704D, MA3X704E
IF  V F
IR  V R
75°C 25°C
Ta = 125°C
1.0
Ta = 125°C
102
−20°C
Reverse current IR (µA)
102
Forward current IF (mA)
VF  Ta
103
10
1
10−1
0.8
75°C
10
1
25°C
10−1
Forward voltage VF (V)
103
IF = 30 mA
0.6
10 mA
0.4
0.2
1 mA
10−2
0
0.2
0.4
0.6
0.8
1.0
10−2
1.2
0
Forward voltage VF (V)
5
10
15
20
25
30
Reverse voltage VR (V)
IR  T a
3
VR = 30 V
3V
1V
Reverse current IR (µA)
10
1
10−1
10−2
−40
2
1
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
Terminal capacitance Ct (pF)
f = 1 MHz
Ta = 25°C
102
200
0
5
10
15
20
25
Reverse voltage VR (V)
SKH00074BED
0
40
80
120
160
Ambient temperature Ta (°C)
Ct  VR
103
0
−40
30
200
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2001 MAR