PANASONIC MA793

Schottky Barrier Diodes (SBD)
MA3Z793 (MA793)
Silicon epitaxial planar type
Unit: mm
For super high speed switching
For small current rectification
0.3+0.1
–0
0.15+0.1
–0.05
1
2
(0.65) (0.65)
Reverse voltage (DC)
Repetitive peak reverse-voltage
Peak forward
Single
current
Series *2
Average forward
Single
current
Series *2
Non-repetitive peak forwardsurge-current *1
5°
Unit
VR
30
V
VRRM
30
V
IFM
300
mA
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
(0.15)
Rating
0 to 0.1
Symbol
0.9±0.1
1.3±0.1
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
5°
1.25±0.1
2.1±0.1
• Two MA3Z792 (MA792) is contained in one package (series connection)
• IF(AV) = 100 mA rectification is possible
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• Low forward voltage VF and good rectification efficiency
• S-Mini type 3-pin package
(0.425)
3
■ Features
SMini3-F1 Package
Marking Symbol: M4A
200
IF(AV)
100
Internal Connection
mA
70
IFSM
3
1
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
1
2
Note) *1: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
*2: Value per chip
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
15
µA
Reverse current (DC)
IR
VR = 30 V
Forward voltage (DC)
VF
IF = 100 mA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
20
pF
Reverse recovery time *
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
2
ns
0.55
V
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz 3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: August 2001
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
SKH00098AED
1
MA3Z793
IF  V F
IR  V R
103
75°C 25°C
1
10−1
0.8
Ta = 125°C
102
75°C
10
25°C
0.1
0.2
0.3
0.4
0.5
10−1
0.6
0
Forward voltage VF (V)
5
10
15
20
25
30
IR  T a
Ct  VR
24
f = 1 MHz
Ta = 25°C
Reverse current IR (µA)
VR = 30 V
3V
1V
102
10
1
10−1
−40
16
12
8
4
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
Terminal capacitance Ct (pF)
20
103
200
IF = 100 mA
0.4
0
5
10
15
20
25
Reverse voltage VR (V)
SKH00098AED
0
−40
10 mA
3 mA
0
40
80
120
160
Ambient temperature Ta (°C)
Reverse voltage VR (V)
104
0.6
0.2
1
0
Forward voltage VF (V)
−20°C
Ta = 125°C
10
1.0
103
Reverse current IR (µA)
Forward current IF (mA)
102
10−2
VF  Ta
104
30
200
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2001 MAR