Datasheet

PHOTOMULTIPLIER TUBE
R13456
FEATURES
●High sensitivity
Radiant at 900 nm................................... 7.3 mA/W (Typ.)
Quantum efficiency at 900 nm ....................... 1 % (Typ.)
●Wide spectral response .......................... 185 nm to 980 nm
●Pin compatible with conventional 1-1/8" side-on PMTs
APPLICATIONS
●Biomedical analysis
Blood analyzer, Flow cytometer, DNA sequencer
●Environmental monitoring
NOx analyzer
●Spectroscopy
Fluorescence spectrometer, Raman spectrometer,
UV–VIS-NIR spectrometer
●Microscopy
Figure 1: Typical spectral response
SPECIFICATIONS
100
Parameter
Description / Value
185 to 980
Spectral response
400
Wavelength of maximum response
MateriaI
Multialkali
Photocathode
Minimum effective area
8 × 24
UV glass
Window material
Structure
Circular-cage
Dynode
Number of stages
9
4
Direct interelectrode Anode to last dynode
6
Anode to all other electrodes
capacitances
Base
11-pin base JEDEC No. B11-88
Weight
Approx. 45
Operating ambient temperature
-30 to +50
Storage temperature
-30 to +50
SuitabIe socket
E678–11A (Sold separately)
E717–63 (Sold separately)
SuitabIe socket assembly
E717–74 (Sold separately)
Unit
nm
nm
—
mm
—
—
—
pF
pF
—
g
°C
°C
—
CATHODE RADIANT SENSITIVITY (mA/W)
GENERAL
TPMSB0261EA
10
1
0.1
R13456
R928
CATHODE RADIANT SENSITIVITY
QUANTUM EFFICIENCY
—
0.01
100 200
300 400 500 600
700 800 900 1000
WAVELENGTH (nm)
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2016 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBE R13456
MAXIMUM RATINGS (Absolute maximum values)
Parameter
Between anode and cathode
Supply voltage
Between anode and last dynode
Average anode current A
Unit
V
V
mA
Value
1250
250
0.1
CHARACTERISTlCS (at 25 °C)
Parameter
Quantum efficiency at 900 nm
Luminous B
at 194 nm
at 254 nm
at 400 nm
Radiant
at 633 nm
at 852 nm
Red/White ratio C
Blue sensitivity index D
Luminous E
at 194 nm
at 254 nm
at 400 nm
Radiant
at 633 nm
at 852 nm
Cathode sensitivity
Anode sensitivity
Min.
0.3
140
—
—
—
—
—
0.3
—
400
—
—
—
—
—
—
—
—
—
—
—
Gain E
Anode dark current F (After 30 min storage in darkness)
ENI (Equivalent Noise Input) G
Anode pulse rise time H
Time response
Electron transit time I
Transit time spread (T.T.S.) J
Typ.
1
280
18
52
74
41
18
0.4
8
2800
1.8 × 105
5.2 × 105
7.4 × 105
4.1 × 105
1.8 × 105
1.0 × 107
5
1.7 × 10-16
2.2
22
1.2
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
50
—
—
—
—
Unit
%
µA/lm
mA/W
mA/W
mA/W
mA/W
mA/W
—
—
A/lm
A/W
A/W
A/W
A/W
A/W
—
nA
W
ns
ns
ns
NOTES
A: Averaged over any interval of 30 s maximum.
B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856 K. Supply voltage is 100 V between the cathode and
all other electrodes connected together as anode.
C: Red/White ratio is the quotient of the cathode current measured using a
red filter(Toshiba R-68) interposed between the light source and the tube
by the cathode current measured with the filter removed under the same
conditions as Note B.
D: The value is cathode output current when a blue filter (Corning CS 5-58
polished to 1/2 stock thickness) is interposed between the light source and
the tube under the same condition as Note B.
E: Measured with the voltage distribution ratio shown in Table 1 below.
Table 1:Voltage distribution ratio
Electrode
Distribution
ratio
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
1
1
1
1
1
SuppIy voltage: 1000 V, K: Cathode,
1
1
1
Dy: Dynode,
1
P
1
P: Anode
F: Measured with the same supply voltage and voltage distribution ratio as
Note E after removal of light.
G: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to
the amount of light in watts to produce a signal-to-noise ratio of unity in the
output of a photomultiplier tube.
ENI =
2q.ldb.G.∆f
S
where
q = Electronic charge (1.60 × 10-19 coulomb).
ldb = Anode dark current(after 30 min storage) in amperes.
G = Gain.
∆f = Bandwidth of the system in hertz. 1 Hz is used.
S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response.
H: The rise time is the time for the output pulse to rise from 10 % to 90 % of the
peak amplitude when the entire photocathode is illuminated by a delta
function light pulse.
I: The electron transit time is the interval between the arrival of delta function
light pulse at the entrance window of the tube and the time when the anode
output reaches the peak amplitude. In measurement, the whole photocathode is illuminated.
J: Also called transit time jitter. This is the fluctuation in electron transit time
between individual pulses in the signal photoelectron mode, and may be
defined as the FWHM of the frequency distribution of electron transit times.
Figure 2: Anode luminous sensitivity and gain
characteristics
105
TPMSB0262EA
Figure 3: Typical time response
100
108
TPMSB0004EC
80
60
104
107
40
TRANS
IT TIME
103
106
105
TIME (ns)
TYPICAL ANODE
SENSITIVITY
102
20
GAIN
ANODE LUMINOUS SENSITIVITY (A/lm)
TYPICAL GAIN
10
8
6
101
MINIMUM ANODE
SENSITIVITY
104
4
RISE T
IME
100
103
10-1
500
700
2
102
1500
1000
1
500
700
Figure 4: Typical temperature coefficient of anode
sensitivity
Figure 5: Typical temperature characteristic of dark current
(at 1000 V, after 30 min storage in darkness)
TPMSB0263 EA
1000
TPMSB0264EA
100
5
DARK CURRENT (nA)
TEMPERATURE COEFFICIENT (%/°C)
1500
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
10
1000
0
10
1
-5
0.1
-10
200
300
400
500
600
700
800 900
WAVELENGTH (nm)
1000
0.01
-30
-20
-10
0
+10
+20
+30 +40
TEMPERATURE (°C)
+50
PHOTOMULTIPLIER TUBE R13456
Figure 6: Dimensional outline and basing diagram (Unit: mm)
28.5 ± 1.5
Figure 7: Socket (Unit: mm)
Sold separately
E678-11A
8 MIN.
49
38
PHOTOCATHODE
DY6
6
7
80 MAX.
DY7
8 DY8
DY3 3
94 MAX.
DY2
9 DY9
2
5
10 P
1
11
29
K
DY1
4
DIRECTION OF LIGHT
18
49.0 ± 2.5
24 MIN.
DY4 4
33
5
3.5
DY5
Bottom View
(Basing Diagram)
32.2 ± 0.5
11 PIN BASE
JEDEC No. B11-88
TPMSA0008EA
Figure 8: D type socket assembly (Unit: mm)
TACCA0064EA
Sold separately
E717-63
E717-74
HOUSING
(INSULATOR)
10
P
R10
9
DY8
8
DY7
C2
R8
C1
26.0±0.2
7
4
R6
5
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
DY4
A
G
2.7
0.7
R5
31.0 ± 0.5
4
R4
HOUSING
(INSULATOR)
POTTING
COMPOUND
DY3
3
DY2
2
DY1
K
1
DY8
8
22.4±0.2
°
10
R2
30°
R10
C3
R9
C2
R8
C1
7
R7
K
DY6
6
DY5
5
R6
R5
DY4
4
DY3
3
DY2
2
DY1
K
1
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
R4
SIDE VIEW
R3
R3
0.7
R1
11
9
DY7
TOP VIEW
2
6
DY9
32.0±0.5
7
DY6
DY5
30.0 +0
-1
R9
SIGNAL
OUTPUT (A)
GND (G)
10
R7
29.0 ± 0.3
450 ± 10
C3
SOCKET
PIN No.
P
14.0±0.5
38.0 ± 0.3
49.0 ± 0.3
DY9
PMT
SIGNAL GND
SIGNAL OUTPUT
RG-174/U(BLACK)
POWER SUPPLY GND
AWG22 (BLACK)
26.0±0.2
SOCKET
PIN No.
32.0±0.5
PMT
3.5
33.0 ± 0.3
5
R2
R1
11
-HV
AWG22 (VIOLET)
-HV (K)
4- 2.8
R13
* "Wiring diagram applies when -HV is supplied."
To supply +HV,connect the pin "G" to+HV, and the pin
"K" to the GND.
BOTTOM VIEW
TACCA0002EH
TACCA0277EA
* Hamamatsu also provides C4900 series compact high voltage power
supplies and C12597-01 series DP type socket assemblies which
incorporate a DC to DC converter type high voltage power supply.
Warning–Personal safety hazards
Electrical Shock–Operating voltages applied to this
device present a shock hazard.
HAMAMATSU PHOTONICS K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
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Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: [email protected]
TPMS1102E01
China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected]
Taiwan: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No.158, Section2, Gongdao 5th Road, East District, Hsinchu, 300, Taiwan R.O.C. Telephone: (886)03-659-0080, Fax: (886)07-811-7238 E-mail: [email protected]
MAR. 2016 IP
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