PANASONIC MA739

Schottky Barrier Diodes (SBD)
MA2Q739 (MA739)
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
4.4 ± 0.3
• Forward current (average) IF(AV): 0.7 A type
• Reverse voltage (DC value) VR: 90 V
• Allowing automatic insertion with the emboss taping
Reverse voltage (DC)
2.15 ± 0.3
+ 0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
1
0.25 − 0.05
2
Symbol
Rating
Unit
VR
90
V
1.4 ± 0.2
2.5 ± 0.3
■ Features
0 to 0.05
1.2 ± 0.4
1.2 ± 0.4
+ 0.4
5.0 − 0.1
Repetitive peak reverse voltage
VRRM
90
IF(AV)
0.7
A
IFSM
10
A
Junction temperature
Tj
−40 to +125
°C
Storage temperature
Tstg
−40 to +125
°C
Average forward
current*1
Non-repetitive peak forward
surge current*2
V
1 : Anode
2 : Cathode
New Mini-Power Type Package (2-pin)
Marking Symbol: PE
Note) *1 : With a printed-circuit board
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 90 V
1
mA
Forward voltage (DC)
VF
IF = 0.7 A
0.8
V
Terminal capacitance
Ct
VR = 10 V, f = 1 MHz
Reverse recovery time*
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
50
pF
100
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 10 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
526
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Schottky Barrier Diodes (SBD)
MA2Q739
IF  V F
IR  VR
VF  Ta
10
100
1.6
1.4
Ta = 125°C
Ta = 125°C
75°C
0.1
25°C
− 20°C
0.01
Reverse current IR (mA)
10
Forward voltage VF (V)
Forward current IF (A)
1
1.2
1.0
0.8
0.6
IF = 700 mA
0.4
0.001
1
75°C
0.1
0.01
25°C
300 mA
0.2
10 mA
0.000 1
0
0.2
0.4
0.6
0.8
1.0
0
−40
1.2
Forward voltage VF (V)
0.001
0
IR  T a
120
Terminal capacitance Ct (pF)
VR = 90 V
50 V
10 V
1
0.1
0.01
40
80
200
0
20
40
60
80
100
120
Reverse voltage VR (V)
120
Ambient temperature Ta
160
(°C)
200
f = 1 MHz
Ta = 25°C
300
200
100
0
0
160
Ct  VR
400
10
Reverse current IR (mA)
80
Ambient temperature Ta (°C)
100
0.001
−40
40
0
20
40
60
80
100
120
Reverse voltage VR (V)
527
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2001 MAR