DATASHEET

EL5611, EL5811
®
Data Sheet
August 3, 2005
60MHz Rail-to-Rail Input-Output VCOM
Amplifiers
The EL5611 and EL5811 are low power, high voltage rail-torail input-output amplifiers targeted primarily at VCOM
applications in TFT-LCD displays. The EL5611 contains six
amplifiers, and the EL5811 contains eight amplifiers.
Operating on supplies ranging from 5V to 15V, while
consuming only 2.5mA per amplifier, the EL5611 and
EL5811 have a bandwidth of 60MHz (-3dB). They also
provide common mode input ability beyond the supply rails,
as well as rail-to-rail output capability. This enables these
amplifiers to offer maximum dynamic range at any supply
voltage.
The EL5611 and EL5811 also feature fast slewing and
settling times, as well as a high output drive capability of
65mA (sink and source). In addition to VCOM applications,
these features make these amplifiers ideal for high speed
filtering and signal conditioning application. Other
applications include battery power, portable devices, and
anywhere low power consumption is important.
The EL5611 is available in 8-pin MSOP and 8-pin HMSOP
packages. The EL5811 is available in space-saving 28-pin
HTSSOP packages.These amplifiers operate over a
temperature range of -40°C to +85°C.
FN7355.1
Features
• 60MHz -3dB bandwidth
• Supply voltage = 4.5V to 16.5V
• Low supply current (per amplifier) = 2.5mA
• High slew rate = 75V/µs
• Unity-gain stable
• Beyond the rails input capability
• Rail-to-rail output swing
• ±180mA output short current
• Pb-Free plus anneal available (RoHS compliant)
Applications
• TFT-LCD panels
• VCOM amplifiers
• Drivers for A-to-D converters
• Data acquisition
• Video processing
• Audio processing
• Active filters
• Test equipment
• Battery-powered applications
• Portable equipment
Ordering Information (Continued)
Ordering Information
PACKAGE
TAPE &
REEL
PKG. DWG. #
PART NUMBER
PACKAGE
EL5611IRE
24-Pin HTSSOP
-
MDP0048
EL5611IRE-T7
24-Pin HTSSOP
7”
MDP0048
EL5811IREZ-T13
(See Note)
28-Pin HTSSOP
(Pb-Free)
EL5611IRE-T13
24-Pin HTSSOP
13”
MDP0048
EL5811IREZ
(See Note)
28-Pin HTSSOP
(Pb-free)
-
MDP0048
EL5811IREZ-T7
(See Note)
28-Pin HTSSOP
(Pb-free)
7”
MDP0048
EL5811IREZ-T13
(See Note)
28-Pin HTSSOP
(Pb-free)
13”
MDP0048
EL5811IREZ
(See Note)
28-Pin HTSSOP
(Pb-Free)
-
MDP0048
EL5811IREZ-T7
(See Note)
28-Pin HTSSOP
(Pb-Free)
7”
MDP0048
PART NUMBER
1
TAPE &
REEL
PKG. DWG. #
13”
MDP0048
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2004, 2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
EL5611, EL5811
Pinouts
EL5611
(24-PIN HTSSOP)
TOP VIEW
VOUTA 1
24 VDD
VINA- 2
23 VOUTF
EL5811
(28-PIN HTSSOP)
TOP VIEW
VDD 1
28 VINH+
VINA+ 2
27 VINH-
VINA+ 3
22 VINF-
VINA- 3
26 VOUTH
VSS 4
21 VINF+
VOUTA 4
25 VOUTG
20 VOUTE
VOUTB 5
24 VING23 VING+
VOUTB 5
VINB- 6
19 VINE-
VINB- 6
VINB+ 7
18 VINE+
VINB+ 7
22 VSS
17 VSS
VINC+ 8
21 VSS
VDD 8
VINC+ 9
16 VOUTD+
VINC- 9
20 VINF+
VINC- 10
15 VOUTD-
VOUTC 10
19 VINF-
14 VOUTD
VOUTD 11
18 VOUTF
VIND- 12
17 VOUTE
VOUTC 11
NC 12
13 NC
2
VIND+ 13
16 VINE-
VDD 14
15 VINE+
FN7355.1
August 3, 2005
EL5611, EL5811
Absolute Maximum Ratings (TA = 25°C)
Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . . .+18V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VS- - 0.5V, VS +0.5V
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . . . 65mA
Maximum Die Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
PARAMETER
VS+ = +5V, VS- = -5V, RL = 1kΩ to 0V, TA = 25°C, Unless Otherwise Specified
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
3
15
mV
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
TCVOS
Average Offset Voltage Drift (Note 1)
IB
Input Bias Current
RIN
Input Impedance
1
GΩ
CIN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
for VIN from -5.5V to 5.5V
50
70
dB
AVOL
Open-Loop Gain
-4.5V ≤ VOUT ≤ 4.5V
62
70
dB
VCM = 0V
7
VCM = 0V
2
-5.5
µV/°C
60
+5.5
nA
V
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
VOH
Output Swing High
IL = 5mA
ISC
IOUT
-4.92
4.85
-4.85
V
4.92
V
Short-Circuit Current
±180
mA
Output Current
±65
mA
80
dB
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
VS is moved from ±2.25V to ±7.75V
IS
Supply Current (Per Amplifier)
No load
2.5
60
3.75
mA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 2)
-4.0V ≤ VOUT ≤ 4.0V, 20% to 80%
75
V/µs
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V step
80
ns
BW
-3dB Bandwidth
60
MHz
GBWP
Gain-Bandwidth Product
32
MHz
PM
Phase Margin
50
°
CS
Channel Separation
f = 5MHz
110
dB
dG
Differential Gain (Note 3)
RF = RG = 1kΩ and VOUT = 1.4V
0.17
%
dP
Differential Phase (Note 3)
RF = RG = 1kΩ and VOUT = 1.4V
0.24
°
NOTES:
1. Measured over operating temperature range.
2. Slew rate is measured on rising and falling edges.
3. NTSC signal generator used.
3
FN7355.1
August 3, 2005
EL5611, EL5811
Electrical Specifications
PARAMETER
VS+ = +5V, VS- = 0V, RL = 1kΩ to 2.5V, TA = 25°C, Unless Otherwise Specified
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
3
15
mV
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
TCVOS
Average Offset Voltage Drift (Note 4)
IB
Input Bias Current
RIN
Input Impedance
1
GΩ
CIN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
for VIN from -0.5V to 5.5V
45
66
dB
AVOL
Open-Loop Gain
0.5V ≤ VOUT ≤ 4.5V
62
70
dB
VCM = 2.5V
7
VCM = 2.5V
2
-0.5
µV/°C
60
+5.5
nA
V
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
VOH
Output Swing High
IL = 5mA
ISC
IOUT
80
4.85
150
mV
4.92
V
Short-circuit Current
±180
mA
Output Current
±65
mA
80
dB
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
VS is moved from 4.5V to 15.5V
IS
Supply Current (Per Amplifier)
No load
2.5
60
3.75
mA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 5)
1V ≤ VOUT ≤ 4V, 20% to 80%
75
V/µs
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V step
80
ns
BW
-3dB Bandwidth
60
MHz
GBWP
Gain-Bandwidth Product
32
MHz
PM
Phase Margin
50
°
CS
Channel Separation
f = 5MHz
110
dB
dG
Differential Gain (Note 6)
RF = RG = 1kΩ and VOUT = 1.4V
0.17
%
dP
Differential Phase (Note 6)
RF = RG = 1kΩ and VOUT = 1.4V
0.24
°
NOTES:
4. Measured over operating temperature range.
5. Slew rate is measured on rising and falling edges.
6. NTSC signal generator used.
4
FN7355.1
August 3, 2005
EL5611, EL5811
Electrical Specifications
PARAMETER
VS+ = +15V, VS- = 0V, RL = 1kΩ to 7.5V, TA = 25°C, Unless Otherwise Specified
DESCRIPTION
CONDITION
MIN
TYP
MAX
UNIT
3
15
mV
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
TCVOS
Average Offset Voltage Drift (Note 7)
IB
Input Bias Current
RIN
Input Impedance
1
GΩ
CIN
Input Capacitance
2
pF
CMIR
Common-Mode Input Range
CMRR
Common-Mode Rejection Ratio
for VIN from -0.5V to 15.5V
53
72
dB
AVOL
Open-Loop Gain
0.5V ≤ VOUT ≤ 14.5V
62
70
dB
VCM = 7.5V
7
VCM = 7.5V
2
-0.5
µV/°C
60
nA
+15.5
V
OUTPUT CHARACTERISTICS
VOL
Output Swing Low
IL = -5mA
VOH
Output Swing High
IL = 5mA
ISC
IOUT
80
14.85
150
mV
14.92
V
Short-circuit Current
±180
mA
Output Current
±65
mA
80
dB
POWER SUPPLY PERFORMANCE
PSRR
Power Supply Rejection Ratio
VS is moved from 4.5V to 15.5V
IS
Supply Current (Per Amplifier)
No load
2.5
60
3.75
mA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 8)
1V ≤ VOUT ≤ 14V, 20% to 80%
75
V/µs
tS
Settling to +0.1% (AV = +1)
(AV = +1), VO = 2V step
80
ns
BW
-3dB Bandwidth
60
MHz
GBWP
Gain-Bandwidth Product
32
MHz
PM
Phase Margin
50
°
CS
Channel Separation
f = 5MHz
110
dB
dG
Differential Gain (Note 9)
RF = RG = 1kΩ and VOUT = 1.4V
0.16
%
dP
Differential Phase (Note 9)
RF = RG = 1kΩ and VOUT = 1.4V
0.22
°
NOTES:
7. Measured over operating temperature range
8. Slew rate is measured on rising and falling edges
9. NTSC signal generator used
5
FN7355.1
August 3, 2005
EL5611, EL5811
Typical Performance Curves
VS=±5V
TA=25°C
400
TYPICAL
PRODUCTION
DISTRIBUTION
300
200
100
25
QUANTITY (AMPLIFIERS)
20
15
10
5
INPUT BIAS CURRENT (µA)
0.008
1.5
1
0.5
0
30
70
110
4.88
70
110
150
TEMPERATURE (°C)
FIGURE 5. OUTPUT HIGH VOLTAGE vs TEMPERATURE
6
21
19
-0.008
-10
30
70
110
150
FIGURE 4. INPUT BIAS CURRENT vs TEMPERATURE
OUTPUT LOW VOLTAGE (V)
4.90
30
17
-0.004
-4.85
VS=±5V
IOUT=5mA
-10
15
0
TEMPERATURE (°C)
4.92
4.86
-50
11
0.004
-0.012
-50
150
FIGURE 3. INPUT OFFSET VOLTAGE vs TEMPERATURE
4.94
13
VS=±5V
TEMPERATURE (°C)
4.96
9
FIGURE 2. INPUT OFFSET VOLTAGE DRIFT
2
-10
7
INPUT OFFSET VOLTAGE DRIFT, TCVOS (µV/°C)
FIGURE 1. INPUT OFFSET VOLTAGE DISTRIBUTION
-0.5
-50
5
1
12
8
10
6
4
2
-0
-2
-4
-6
-8
-10
-12
INPUT OFFSET VOLTAGE (mV)
OUTPUT HIGH VOLTAGE (V)
TYPICAL
PRODUCTION
DISTRIBUTION
0
0
INPUT OFFSET VOLTAGE (mV)
VS=±5V
3
QUANTITY (AMPLIFIERS)
500
-4.87
VS=±5V
IOUT=5mA
-4.89
-4.91
-4.93
-4.95
-50
-10
30
70
110
150
TEMPERATURE (°C)
FIGURE 6. OUTPUT LOW VOLTAGE vs TEMPERATURE
FN7355.1
August 3, 2005
EL5611, EL5811
Typical Performance Curves (Continued)
78
VS=±5V
RL=1kΩ
VS=±5V
77
SLEW RATE (V/µs)
OPEN-LOOP GAIN (dB)
75
70
65
76
75
74
73
60
-50
-10
30
70
110
72
-50
150
-10
FIGURE 7. OPEN-LOOP GAIN vs TEMPERATURE
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
2.7
2.5
2.3
2.1
1.9
1.7
1.5
4
8
12
150
16
VS=±5V
2.65
2.6
2.55
2.5
2.45
2.4
-50
20
-10
30
70
110
150
TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
FIGURE 9. SUPPLY CURRENT PER AMPLIFIER vs SUPPLY
VOLTAGE
FIGURE 10. SUPPLY CURRENT PER AMPLIFIER vs
TEMPERATURE
0
0.3
DIFFERENTIAL PHASE (°)
-0.02
DIFFERENTIAL GAIN (%)
110
FIGURE 8. SLEW RATE vs TEMPERATURE
TA=25°C
2.7
70
TEMPERATURE (°C)
TEMPERATURE (°C)
2.9
30
-0.04
-0.06
-0.08
-0.1
-0.12
VS=±5V
AV=2
RL=1kΩ
-0.14
-0.16
-0.18
0.25
0.2
0.15
0.1
0.05
0
0
100
IRE
FIGURE 11. DIFFERENTIAL GAIN
7
200
0
100
200
IRE
FIGURE 12. DIFFERENTIAL PHASE
FN7355.1
August 3, 2005
EL5611, EL5811
Typical Performance Curves (Continued)
-30
-60
2nd HD
-70
-80
40
PHASE
10
4
6
8
-20
1K
10
10K
VS=±5V
AV=1
CLOAD=0pF
1kΩ
1
-1
560Ω
-3
150Ω
-5
100K
1M
10M
1000pF
15
10pF
5
-5
-15
VS=±5V
AV=1
RL=1kΩ
1M
10M
100M
FIGURE 16. FREQUENCY RESPONSE FOR VARIOUS CL
MAXIMUM OUTPUT SWING (VP-P)
OUTPUT IMPEDANCE (Ω)
350
300
250
200
150
100
50
1M
100pF
FREQUENCY (Hz)
400
10M
100M
FREQUENCY (Hz)
FIGURE 17. CLOSED LOOP OUTPUT IMPEDANCE
8
-50
100M
47pF
-25
100K
100M
FIGURE 15. FREQUENCY RESPONSE FOR VARIOUS RL
100K
10M
25
FREQUENCY (Hz)
0
10K
1M
FIGURE 14. OPEN LOOP GAIN AND PHASE
MAGNITUDE (NORMALIZED) (dB)
MAGNITUDE (NORMALIZED) (dB)
FIGURE 13. HARMONIC DISTORTION vs VOP-P
3
100K
FREQUENCY (Hz)
VOP-P (V)
5
70
0
-90
2
130
20
3rd HD
0
190
GAIN
PHASE (°)
-50
60
GAIN (dB)
-40
DISTORTION (dB)
250
80
VS=±5V
AV=2
RL=1kΩ
FREQ=1MHz
12
10
8
6
4
2
VS=±5V
AV=1
RL=1kΩ
DISTORTION <1%
0
10K
100K
1M
10M
100M
FREQUENCY (kHz)
FIGURE 18. MAXIMUM OUTPUT SWING vs FREQUENCY
FN7355.1
August 3, 2005
EL5611, EL5811
Typical Performance Curves (Continued)
-15
-80
PSRR+
-35
-45
-40
-20
-55
-65
1K
PSRR-
-60
PSRR (dB)
CMRR (dB)
-25
VS=±5V
TA=25°C
10K
100K
1M
10M
0
100
100M
1K
FREQUENCY (Hz)
XTALK (dB)
100
10
DUAL MEASURED CH A TO B
QUAD MEASURED CH A TO D OR B TO C
OTHER COMBINATIONS YIELD
IMPROVED REJECTION
-100
-120
VS=±5V
RL=1kΩ
AV=1
VIN=110mVRMS
-140
1K
10K
100K
1M
10M
-160
1K
100M
10K
FREQUENCY (Hz)
60
1M
10M 30M
FIGURE 22. CHANNEL SEPARATION
5
VS=±5V
AV=1
RL=1kΩ
VIN=±50mV
TA=25°C
4
3
STEP SIZE (V)
80
100K
FREQUENCY (Hz)
FIGURE 21. INPUT VOLTAGE NOISE SPECTRAL DENSITY
100
10M
-60
-80
1
100
1M
FIGURE 20. PSRR
1K
VOLTAGE NOISE (nV/√Hz)
100K
FREQUENCY (Hz)
FIGURE 19. CMRR
OVERSHOOT (%)
10K
40
VS=±5V
AV=1
RL=1kΩ
0.1%
2
1
0
-1
-2
0.1%
-3
20
-4
0
10
100
LOAD CAPACITANCE (pF)
FIGURE 23. SMALL-SIGNAL OVERSHOOT vs LOAD
CAPACITANCE
9
1K
-5
55
65
75
85
95
105
SETTLING TIME (ns)
FIGURE 24. SETTLING TIME vs STEP SIZE
FN7355.1
August 3, 2005
EL5611, EL5811
Typical Performance Curves (Continued)
VS=±5V
TA=25°C
AV=1
RL=1kΩ
VS=±5V
TA=25°C
AV=1
RL=1kΩ
100mV STEP
1V STEP
50ns/DIV
50ns/DIV
FIGURE 25. LARGE SIGNAL TRANSIENT RESPONSE
FIGURE 26. SMALL SIGNAL TRANSIENT RESPONSE
Pin Descriptions
EL5611
EL5811
NAME
1, 5, 9, 14, 20, 23
4, 5, 10, 11, 17,
18, 25, 26
VOUTx
FUNCTION
EQUIVALENT CIRCUIT
Amplifiers output
VS+
GND
VS-
CIRCUIT 1
2, 3, 6, 7, 9, 10,
15, 16, 21, 22
2, 3, 6, 7, 8, 9, 12.
13, 15, 16, 19, 20,
23, 24, 27, 28
VINx
Amplifiers input
VS+
VSCIRCUIT 2
8, 24
1, 14
VS+
Positive power supply
24, 17
21, 22
VS-
Negative power supply
NC
Not connected
12, 13
10
FN7355.1
August 3, 2005
EL5611, EL5811
Applications Information
continuous current never exceeds ±65mA. This limit is set by
the design of the internal metal interconnects.
Product Description
The EL5611 and EL5811 voltage feedback amplifiers are
fabricated using a high voltage CMOS process. They exhibit
rail-to-rail input and output capability, are unity gain stable
and have low power consumption (2.5mA per amplifier).
These features make the EL5611, and EL5811 ideal for a
wide range of general-purpose applications. Connected in
voltage follower mode and driving a load of 1kΩ, the EL5611
and EL5811 have a -3dB bandwidth of 60MHz while
maintaining a 75V/µs slew rate. The EL5611 a six channel
amplifier, and the EL5811 an 8 channel amplifier.
Output Phase Reversal
The EL5611 and EL5811 are immune to phase reversal as
long as the input voltage is limited from VS- -0.5V to VS+
+0.5V. Figure 28 shows a photo of the output of the device
with the input voltage driven beyond the supply rails.
Although the device's output will not change phase, the
input's overvoltage should be avoided. If an input voltage
exceeds supply voltage by more than 0.6V, electrostatic
protection diodes placed in the input stage of the device
begin to conduct and overvoltage damage could occur.
Operating Voltage, Input, and Output
VS = ±2.5V, TA = 25°C, AV = 1, VIN = 6VP-P
The EL5611and EL5811 are specified with a single nominal
supply voltage from 5V to 15V or a split supply with its total
range from 5V to 15V. Correct operation is guaranteed for a
supply range of 4.5V to 16.5V. Most EL5611 and EL5811
specifications are stable over both the full supply range and
operating temperatures of -40°C to +85°C. Parameter
variations with operating voltage and/or temperature are
shown in the typical performance curves.
The input common-mode voltage range of the EL5611 and
EL5811 extends 500mV beyond the supply rails. The output
swings of the EL5611 and EL5811 typically extend to within
100mV of positive and negative supply rails with load
currents of 5mA. Decreasing load currents will extend the
output voltage range even closer to the supply rails. Figure
27 shows the input and output waveforms for the device in
the unity-gain configuration. Operation is from ±5V supply
with a 1kΩ load connected to GND. The input is a 10VP-P
sinusoid. The output voltage is approximately 9.8VP-P.
VS = ±5V, TA = 25°C, AV = 1, VIN = 10VP-P
5V
10µs
1V
10µs
1V
FIGURE 28. OPERATION WITH BEYOND-THE-RAILS INPUT
Power Dissipation
With the high-output drive capability of the EL5611 and
EL5811 amplifiers, it is possible to exceed the 125°C
'absolute-maximum junction temperature' under certain load
current conditions. Therefore, it is important to calculate the
maximum junction temperature for the application to
determine if load conditions need to be modified for the
amplifier to remain in the safe operating area.
INPUT
5V
T JMAX – T AMAX
P DMAX = --------------------------------------------Θ JA
OUTPUT
The maximum power dissipation allowed in a package is
determined according to:
where:
FIGURE 27. OPERATION WITH RAIL-TO-RAIL INPUT AND
OUTPUT
• TJMAX = Maximum junction temperature
• TAMAX = Maximum ambient temperature
• ΘJA = Thermal resistance of the package
Short Circuit Current Limit
• PDMAX = Maximum power dissipation in the package
The EL5611 and EL5811 will limit the short circuit current to
±180mA if the output is directly shorted to the positive or the
negative supply. If an output is shorted indefinitely, the power
dissipation could easily increase such that the device may
be damaged. Maximum reliability is maintained if the output
The maximum power dissipation actually produced by an IC
is the total quiescent supply current times the total power
supply voltage, plus the power in the IC due to the loads, or:
11
P DMAX = Σi [ V S × I SMAX + ( V S + – V OUT i ) × I LOAD i ]
FN7355.1
August 3, 2005
EL5611, EL5811
when sourcing, and:
P DMAX = Σi [ V S × I SMAX + ( V OUT i – V S - ) × I LOAD i ]
1
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
909mW
0.9
POWER DISSIPATION (W)
when sinking,
where:
• i = 1 to 6 for EL5611 and 1 to 8 for EL5811
• VS = Total supply voltage
• ISMAX = Maximum supply current per amplifier
• VOUTi = Maximum output voltage of the application
• ILOADi = Load current
If we set the two PDMAX equations equal to each other, we
can solve for RLOADi to avoid device overheat. Figures 29
and 30 provide a convenient way to see if the device will
overheat. The maximum safe power dissipation can be
found graphically, based on the package type and the
ambient temperature. By using the previous equation, it is a
simple matter to see if PDMAX exceeds the device's power
derating curves. To ensure proper operation, it is important
to observe the recommended derating curves shown in
Figures 29 & 30.
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD - HTSSOP
EXPOSED DIEPAD SOLDERED TO PCB PER
JESD51-5
POWER DISSIPATION (W)
3.5
3.333W
3
3.030W
2.5
HTSSOP28
θJA=30°C/W
2
HTSSOP24
θJA=33°C/W
1.5
1
0.5
0
0
25
50
75 85 100
125
150
AMBIENT TEMPERATURE (°C)
0.8 833mW
0.7
HTSSOP28
θJA=110°C/W
0.6
0.5
HTSSOP24
θJA=120°C/W
0.4
0.3
0.2
0.1
0
0
25
50
75 85 100
125
150
AMBIENT TEMPERATURE (°C)
FIGURE 30. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
Unused Amplifiers
It is recommended that any unused amplifiers in a dual and
a quad package be configured as a unity gain follower. The
inverting input should be directly connected to the output
and the non-inverting input tied to the ground plane.
Power Supply Bypassing and Printed Circuit
Board Layout
The EL5611 and EL5811 can provide gain at high frequency.
As with any high-frequency device, good printed circuit
board layout is necessary for optimum performance. Ground
plane construction is highly recommended, lead lengths
should be as short as possible and the power supply pins
must be well bypassed to reduce the risk of oscillation. For
normal single supply operation, where the VS- pin is
connected to ground, a 0.1µF ceramic capacitor should be
placed from VS+ to pin to VS- pin. A 4.7µF tantalum
capacitor should then be connected in parallel, placed in the
region of the amplifier. One 4.7µF capacitor may be used for
multiple devices. This same capacitor combination should be
placed at each supply pin to ground if split supplies are to be
used.
FIGURE 29. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
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12
FN7355.1
August 3, 2005
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