MBR2035CT thru MBR20200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-220AB MECHANICAL DATA Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.88 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR MBR MBR MBR MBR MBR MBR 2035 2045 2050 2060 2090 20100 20150 20200 CT CT CT CT CT CT CT CT MBR UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 200 V Maximum RMS voltage VRMS 24 31 35 42 63 70 105 140 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 200 V Maximum average forward rectified current IF(AV) 20 A Peak repetitive forward current (Rated VR, Square Wave, 20KHz) IFRM 20 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse surge current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF=10A, TJ=25℃ IF=10A, TJ=125℃ IF=20A, TJ=25℃ IF=20A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ VF IR Voltage rate of change (Rated VR) dV/dt Typical thermal resistance RθJC Operating junction temperature range Storage temperature range 1 0.5 A - 0.80 0.85 0.99 0.57 0.70 0.75 0.87 0.84 0.95 0.95 1.23 0.72 0.85 0.85 1.10 V 0.1 10 15 5 0.15 10000 V/μs 2.0 1.0 mA O C/W TJ - 55 to +150 O C TSTG - 55 to +150 O C Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Document Number: DS_D1308039 Version: L13 MBR2035CT thru MBR20200CT Taiwan Semiconductor ORDERING INFORMATION AEC-Q101 PART NO. QUALIFIED Prefix "H" MBR20xxCT GREEN COMPOUND PACKING CODE CODE Suffix "G" C0 PACKAGE PACKING TO-220AB 50 / Tube Note 1: "xx" defines voltage from 35V (MBR2035CT) to 200V (MBR20200CT) EXAMPLE PREFERRED P/N PART NO. MBR2060CT C0 AEC-Q101 PACKING CODE QUALIFIED MBR2060CT C0 MBR2060CT C0G MBR2060CT C0 MBR2060CTHC0 MBR2060CT H GREEN COMPOUND CODE G DESCRIPTION Green compound AEC-Q101 qualified C0 RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) 24 AVERAGE FORWARD A CURRENT (A) 20 16 12 8 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 4 0 0 50 100 CASE TEMPERATURE 150 PEAK FORWARD SURGE CURRENT (A) FIG.1- FORWARD CURRENT DERATING CURVE TJ=25℃ 1 MBR2035CT-2045CT MBR2050CT-2060CT MBR20100CT MBR20150CT-200CT Pulse Width=300μs 1% Duty Cycle 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) Document Number: DS_D1308039 100 75 50 25 0 1 10 100 FIG. 4- TYPICAL REVERSE CHARACTERISTICS PER LEG 100 1 1.1 1.2 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) TJ=125℃ 0 8.3ms Single Half Sine Wave JEDEC Method 125 NUMBER OF CYCLES AT 60 Hz 100 0.1 150 (oC) FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG 10 FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 10 TJ=125℃ 1 TJ=75℃ 0.1 TJ=25℃ 0.01 MBR2035CT-2045CT MBR2050CT-20100CT MBR20150CT-20200CT 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: L13 MBR2035CT thru MBR20200CT Taiwan Semiconductor FIG. 5- TYPICAL JUNCTION CAPACITANCE PER LEG 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 10000 FIG. 6- TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 10 1000 MBR2035CT-2045CT MBR2050CT-20200CT 100 0.1 1 10 100 1 0.1 0.01 0.1 REVERSE VOLTAGE (V) 1 10 100 T-PULSE DURATION. (sec) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.50 - 0.413 B 2.62 3.44 0.103 0.135 C 2.80 4.20 0.110 0.165 D 0.68 0.94 0.027 0.037 E 3.54 4.00 0.139 0.157 F 14.60 16.00 0.575 0.630 G 13.19 14.79 0.519 0.582 H 2.41 2.67 0.095 0.105 I 4.42 4.76 0.174 0.187 J 1.14 1.40 0.045 0.055 K 5.84 6.86 0.230 0.270 L 2.20 2.80 0.087 0.110 M 0.35 0.64 0.014 0.025 MARKING DIAGRAM P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1308039 Version: L13 MBR2035CT thru MBR20200CT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1308039 Version: L13