MBRF735 SERIES_J1512.pdf

MBRF735 - MBRF7150
Taiwan Semiconductor
CREAT BY ART
7A, 35V - 150V Isolated Schottky Barrier Rectifiers
FEATURES
- Low power loss, high efficiency
- Guard ring for over-voltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
1
- Halogen-free according to IEC 61249-2-21
2
MECHANICAL DATA
ITO-220AC
Case: ITO-220AC
Molding compound: UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
MBRF MBRF MBRF MBRF MBRF MBRF MBRF
735
745
750
760
790
7100
7150
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
90
100
150
V
Maximum RMS voltage
VRMS
24
31
35
42
63
70
105
V
Maximum DC blocking voltage
VDC
35
45
50
60
90
100
150
V
Maximum average forward rectified current
IF(AV)
7.5
A
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
15
A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
150
A
Peak repetitive reverse surge current (Note 1)
IRRM
Maximum instantaneous forward voltage (Note 2)
IF=7.5A, TJ=25°C
IF=7.5A, TJ=125°C
IF=15A, TJ=25°C
IF=15A, TJ=125°C
Maximum reverse current @ rated VR
TJ=25°C
TJ=125°C
VF
IR
1.0
0.5
A
-
0.75
0.92
1.02
0.57
0.65
0.82
0.92
0.84
-
-
-
0.72
-
-
-
0.1
15
10
5
V
mA
Voltage rate of change (Rated VR)
dV/dt
10000
V/μs
Typical thermal resistance
RθJC
7
°C/W
TJ
- 55 to +150
°C
TSTG
- 55 to +175
°C
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Version: J1512
MBRF735 - MBRF7150
Taiwan Semiconductor
CREAT BY ART
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
MBRF7xx
(Note 1)
PACKING CODE
PACKING CODE
H
SUFFIX
C0
(*)
G
PACKAGE
PACKING
ITO-220AC
50 / Tube
Note 1: "xx" defines voltage from 35V (MBRF735) to 150V (MBRF7150)
*: Optional available
EXAMPLE
EXAMPLE P/N
PART NO.
MBRF760HC0G
MBRF760
PART NO.
PACKING CODE
PACKING CODE
SUFFIX
H
SUFFIX
C0
DESCRIPTION
AEC-Q101 qualified
Green compound
G
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.1 FORWARD CURRENT DERATING CURVE
175
PEAK FORWARD SURGE CURRENT (A)
AVERAGE FORWARD CURRENT (A)
10
8
6
Resistive or
inductive load
with heat sink
4
MBRF735-MBRF745
MBRF750-MBRF7150
2
0
0
50
100
150
150
8.3ms single half sine wave
125
100
75
50
25
0
1
10
NUMBER OF CYCLES AT 60 Hz
CASE TEMPERATURE (oC)
FIG. 3 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
100
MBRF735-MBRF745
MBRF750-MBRF7150
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT (A)
Pulse width=300μs
1% duty cycle
10
TJ=125°C
MBRF7150
1
TJ=25°C
0.1
MBRF735-MBRF745
MBRF750-MBRF760
MBRF790-MBRF7100
0.01
0
0.1
0.2
0.3
100
0.4
0.5
0.6
0.7
0.8
FORWARD VOLTAGE (V)
0.9
1
1.1
1.2
10
1
TJ=125°C
0.1
TJ=75°C
0.01
TJ=25°C
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Version: J1512
MBRF735 - MBRF7150
Taiwan Semiconductor
CREAT BY ART
FIG. 5 TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE (pF) A
10000
f=1.0MHz
Vsig=50mVp-p
1000
100
MBRF735-MBRF745
MBRF750-MBRF760
MBRF790-MBRF7150
10
0.1
1
10
100
TRANSIENT THERMAL IMPEDANCE (°C/W)
FIG. 6 TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
100
10
1
0.1
0.01
0.1
1
10
100
T-PULSE DURATION (sITO-220AC )
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
ITO-220AC
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
4.30
4.70
0.169
0.185
B
2.50
3.10
0.098
0.122
C
2.30
2.90
0.091
0.114
D
0.46
0.76
0.018
0.030
E
6.30
6.90
0.248
0.272
F
9.60
10.30
0.378
0.406
G
3.00
3.40
0.118
0.134
H
0.00
1.60
0.000
0.063
I
0.95
1.45
0.037
0.057
J
0.50
0.90
0.020
0.035
K
2.40
3.20
0.094
0.126
L
14.80
15.50
0.583
0.610
M
-
4.10
-
0.161
N
-
1.80
-
0.071
O
12.60
13.80
0.496
0.543
P
4.95
5.20
0.195
0.205
MARKING DIAGRAM
P/N
= Specific Device Code
G
= Green Compound
YWW
= Date Code
F
= Factory Code
Version: J1512
MBRF735 - MBRF7150
Taiwan Semiconductor
CREAT BY ART
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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Version: J1512