TSF30H45C SERIES_C14.pdf

TSF30H45C thru TSF30H60C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
ITO-220AB
- Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
TSF30H45C
TSF30H60C
UNIT
VRRM
45
60
V
Maximum repetitive peak reverse voltage
per device
Maximum average forward
rectified current
per diode
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
Voltage rate of change (Rated VR)
Instantaneous forward
voltage per diode (Note1)
170
A
dV/dt
10000
V/μs
TJ = 25°C
IF = 15A
VF
IF = 5A
IF = 7.5A
TJ = 125°C
IF = 15A
Instantaneous reverse current per
diode at rated reverse voltage
TJ = 25°C
TJ = 125°C
A
15
IFSM
IF = 5A
IF = 7.5A
30
IF(AV)
IR
TYP.
MAX.
TYP.
MAX.
0.43
-
0.45
-
0.46
-
0.48
-
0.53
0.61
0.55
0.70
0.34
-
0.36
-
0.39
-
0.41
-
0.50
-
0.52
-
25
500
15
500
μA
15
70
10
45
mA
V
Typical thermal resistance per diode
RθJC
4.5
°C/W
Operating junction temperature range
TJ
- 55 to +150
°C
TSTG
- 55 to +150
°C
Storage temperature range
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
Document Number: DS_D1411060
Version: C14
TSF30H45C thru TSF30H60C
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
TSF30HXXC
(Note 1)
C0
PACKING CODE
SUFFIX
G
PACKAGE
PACKING
ITO-220AB
50 / Tube
Note 1: "XX" defines voltage from 45V (TSF30H45C) to 60V (TSF30H60C)
EXAMPLE
PREFERRED
PART NO.
TSF30H60C C0G
PART NO.
PACKING CODE
TSF30H60C
C0
PACKING CODE
DESCRIPTION
SUFFIX
G
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
FIG. 1 FORWARD CURRENT DERATING CURVE
FIG. 2 TYPICAL FORWARD CHARACTERISTICS
100
40
INSTANTANEOUS FORWARD CURRENT (A)
AVERAGE FORWARD CURRENT (A)
TSF30H45C
30
20
WITH HEATSINK
3in x 5in x 0.25in
Al-Plate
10
10
TJ=150oC
1
TJ=125oC
TJ=100oC
0.1
TJ=25oC
0.01
0
0
25
50
75
100
125
0
150
0.2
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
0.8
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
100
100
INSTANTANEOUS REVERSE CURRENT (mA)
TSF30H60C
INSTANTANEOUS FORWARD CURRENT (A)
0.6
FORWARD VOLTAGE (V)
CASE TEMPERATURE (oC)
10
TJ=150oC
1
TJ=125oC
TJ=100oC
0.1
TJ=25oC
0.01
0
0.4
0.2
0.4
0.6
FORWARD VOLTAGE (V)
Document Number: DS_D1411060
0.8
TSF30H45C
TJ=150oC
10
TJ=125oC
TJ=100oC
1
0.1
TJ=25oC
0.01
0.001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Version: C14
TSF30H45C thru TSF30H60C
Taiwan Semiconductor
FIG. 6 TYPICAL JUNCTION CAPACITANCE
FIG. 5 TYPICAL REVERSE CHARACTERISTICS
100
10000
f=1.0MHz
Vsig=50mVp-p
TJ=150oC
10
JUNCTION CAPACITANCE (pF)
INSTANTANEOUS REVERSE CURRENT (mA)
TST30H120CW
TSF30H60C
TJ=125oC
TJ=100oC
1
0.1
0.01
TJ=25oC
0.001
10
20
30
40
50
60
70
80
90
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1411060
100
1000
100
0.1
1
10
100
REVERSE VOLTAGE (V)
Version: C14
TSF30H45C thru TSF30H60C
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
ITO-220AB
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
4.30
4.70
0.17
0.19
B
2.50
3.16
0.10
0.12
C
2.30
2.96
0.09
0.12
D
0.46
0.76
0.02
0.03
E
6.30
6.90
0.25
0.27
F
9.60
10.30
0.38
0.41
G
3.00
3.40
0.12
0.13
H
I
0.95
0.50
1.45
0.90
0.04
0.02
0.06
0.04
J
2.40
3.20
0.09
0.13
K
14.80
15.50
0.58
0.61
L
-
4.10
-
0.16
M
12.60
13.80
0.50
0.54
N
-
1.80
-
0.07
O
2.41
2.67
0.09
0.11
MARKING DIAGRAM
P/N
= Specific Device Code
G
= Green Compound
YWW
= Date Code
F
= Factory Code
Document Number: DS_D1411060
Version: C14
TSF30H45C thru TSF30H60C
Taiwan Semiconductor
CREAT BY ART
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assumes no responsibility or liability for any errors or inaccuracies.
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Document Number: DS_D1411060
Version: C14