TS4448 RG CREAT BY ART Taiwan Semiconductor Small Signal Product 150mW High Speed SMD Switching Diode FEATURES - Designed for mounting on small surface - Extremely thin/leadless package - High mounting capability, strong surge with stand, high reliability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 0603 - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA - Case: 0603 standard package, molded plastic - Terminal: Gold plated, solderable per MIL-STD-750, method 2026 guaranteed - High temperature soldering guaranteed: 260oC/10s - Polarity: Indicated by cathode band - Weight : 3 mg (approximately) - Marking code: S5 MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE UNIT PD 150 mW Repetitive Peak Reverse Voltage VRRM 100 V Repetitive Peak Forward Current IFRM 300 mA IO 125 mA 2 A Power dissipation Mean forward current Non-repetitive peak forward surge current Pulse Width = 1 μs Pulse Width = 8.3 ms Thermal resistance form junction to ambient IFSM 1.0 (Note 1) Junction and storage temperature range PARAMETER Reverse breakdown voltage Forward voltage Reverse leakage current Junction capacitance Reverse recovery time RθJA 666 °C/W TJ, TSTG - 40 to +125 °C SYMBOL MIN MAX UNIT V(BR) - 80 V (Note 2) IF=100mA IF=5mA VR=20V VR=80V VF IR 0.62 1 0.72 - 25 - 100 V nA VR=0.5V, f=1.0MHz CJ - 9 pF (Note 3) trr - 9 ns Note: 1 Valid provided that electrodes are kept at ambient temperature Note: 2 Test Condition: IR=100μA Note: 3 Test Condition: IF=IR=10mA, RL=100Ω, IRR=1mA Version: G1601 TS4448 RG CREAT BY ART Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) Fig. 2 Reverse Current VS. Reverse Voltage Fig. 1 Typical Forward Characteristics 100 1000 10 Reverse Current (uA) Instantaneous Forward Current (mA) 100 10 1 1 0.1 0.1 0.01 0.01 0.0 1.0 Instantaneous Forward Voltage (V) 0 2.0 40 60 80 Reverse Voltage (V) 100 120 Fig. 4 Typical Junction Capacitance Fig. 3 Admissible Power Dissipation Curve 200 7.2 Junction Capacitance (pF) Power Dissipation (mW) 20 100 6.0 4.8 3.6 2.4 1.2 0.0 0 0 25 50 75 100 125 150 175 0 2 4 6 8 10 Reverse Voltage (V) Ambient Temperature (°C) Fig. 5 Forward Resistance VS. Forward Current Dynamic Forward Resistance (Ohm) 10000 1000 100 10 1 0.01 0.1 1 10 100 Forward Current (mA) Version: G1601 TS4448 RG Taiwan Semiconductor Small Signal Product ORDERING INFORMATION PART NO. PACKING CODE TS4448 RG PACKING CODE SUFFIX PACKAGE PACKING 0603 4,000 / 7" reel G Note: Whole series with green compound EXAMPLE EXAMPLE P/N PART NO. TS4448 RGG TS4448 PACKING PACKING CODE CODE SUFFIX RG G DESCRIPTION Green compound PACKAGE OUTLINE DIMENSION 0603 DIM. Unit (mm) Unit (inch) Min Typ. Max Min Typ. Max L 1.60 - 1.80 0.063 - 0.071 W 0.80 - 1.00 0.031 - 0.039 T 0.70 - 0.85 0.028 - 0.033 C - 0.45 - - 0.018 - D - 0.70 - - 0.028 - Version: G1601 TS4448 RG Taiwan Semiconductor Small Signal Product Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Version: G1601