SMBJ SERIES Taiwan Semiconductor CREAT BY ART 600W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Excellent clamping capability - Fast response time: Typically less than 1.0ps - Typical IR less than 1μA above 10V - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 DO-214AA (SMB) MECHANICAL DATA Case: DO-214AA (SMB) Molding compound: UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.09 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak power dissipation at TA=25°C, tp=1ms (Note 1) PPK 600 W Steady state power dissipation PD 3 W Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A VF 3.5 / 5.0 V RθJC RθJA 10 55 °C/W TJ - 55 to +150 °C TSTG - 55 to +150 °C Maximum instantaneous forward voltage at 50 A for Unidirectional only (Note 2) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: Non-repetitive current pulse per fig. 3 and derated above TA=25°C per fig. 2 Note 2: VF=3.5V on SMBJ5.0 - SMBJ90 and VF=5.0V on SMBJ100 - SMBJ170 Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types SMBJ5.0 - types SMBJ170 2. Electrical characteristics apply in both directions Version: N1602 SMBJ SERIES Taiwan Semiconductor CREAT BY ART ORDERING INFORMATION PART NO. SMBJxxxx (Note 1) PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX R5 H R4 G M4 PACKAGE PACKING SMB 850 / 7" Plastic reel SMB 3,000 / 13" Paper reel SMB 3,000 / 13" Plastic reel Note 1: "xxxx" defines voltage from 5.0V (SMBJ5.0) to 170V (SMBJ170A) EXAMPLE EXAMPLE PART NO. SMBJ20AHR5G PART NO. SMBJ20A PART NO. SUFFIX H PACKING CODE R5 PACKING CODE SUFFIX G DESCRIPTION AEC-Q101 qualified Green compound Version: N1602 SMBJ SERIES Taiwan Semiconductor CREAT BY ART RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG.2 PULSE DERATING CURVE FIG. 1 PEAK PULSE POWER RATING CURVE 125 Non-repetitive pulse waveform shown in fig.3 PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) PPPM, PEAK PULSE POWER, KW 100 100 10 1 0.1 0.1 1 10 100 1000 75 50 25 0 0 10000 Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM Peak value IPPM 100 Half value-IPPM/2 80 10/1000μs waveform as defined by R.E.A. 60 40 20 td 0 0 0.5 1 1.5 2 2.5 3 3.5 4 t, TIME ms IFSM, PEAK FORWARD SURGE CURRENT (A) PEAK PULSE CURRENT (%) 120 75 100 125 150 175 200 FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG. 3 CLAMPING POWER PULSE WAVEFORM tr=10μs 50 TA, AMBIENT TEMPERATURE (°C) tp, PULSE WIDTH, (μs) 140 25 100 8.3ms single half sine wave unidirectional only 10 1 10 100 NUMBER OF CYCLES AT 60 Hz FIG. 5 TYPICAL JUNCTION CAPACITANCE CJ, JUNCTION CAPACITANCE (pF) A 100000 10000 VR=0 1000 100 f=1.0MHz Vsig=50mVp-p VR-rated stand-off voltage 10 1 10 100 V(BR), BREAKDOWN VOLTAGE (V) Version: N1602 SMBJ SERIES Taiwan Semiconductor CREAT BY ART Device SMBJ5.0 SMBJ5.0A SMBJ6.0 SMBJ6.0A SMBJ6.5 SMBJ6.5A SMBJ7.0 SMBJ7.0A SMBJ7.5 SMBJ7.5A SMBJ8.0 SMBJ8.0A SMBJ8.5 SMBJ8.5A SMBJ9.0 SMBJ9.0A SMBJ10 SMBJ10A SMBJ11 SMBJ11A SMBJ12 SMBJ12A SMBJ13 SMBJ13A SMBJ14 SMBJ14A SMBJ15 SMBJ15A SMBJ16 SMBJ16A SMBJ17 SMBJ17A SMBJ18 SMBJ18A SMBJ20 SMBJ20A SMBJ22 SMBJ22A SMBJ24 SMBJ24A SMBJ26 SMBJ26A SMBJ28 SMBJ28A Device Marking Code KD KE KF KG KH KK KL KM KN KP KQ KR KS KT KU KV KW KX KY KZ LD LE LF LG LH LK LL LM LN LP LQ LR LS LT LU LV LW LX LY LZ MD ME MF MG Breakdown Voltage (Note 1) Test Current Stand-Off Voltage VBR V IT mA VWM V Maximum Reverse Leakage @ VWM IR μA 10 10 10 10 10 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 5.0 5.0 6.0 6.0 6.5 6.5 7.0 7.0 7.5 7.5 8.0 8.0 8.5 8.5 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 28 28 800 800 800 800 500 500 200 200 100 100 50 50 10 10 5 5 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Min. 6.40 6.40 6.67 6.67 7.22 7.22 7.78 7.78 8.33 8.33 8.89 8.89 9.44 9.44 10.0 10.0 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 Max. 7.30 7.00 8.15 7.37 8.82 7.98 9.51 8.60 10.3 9.21 10.9 9.83 11.5 10.4 12.2 11.1 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 38.0 34.4 Maximum Peak Pulse Current IPPM A (Note 2) 65.0 68.0 55.0 61.0 51.0 56.0 47.0 52.0 44.0 48.0 42.0 46.0 39.0 43.0 37.0 40.0 33.0 37.0 31.0 34.0 28.0 31.0 26.0 29.0 24.4 27.0 23.1 25.1 21.8 24.2 20.0 22.8 19.5 21.5 17.6 19.4 15.0 17.7 14.6 16.0 13.5 14.9 12.6 13.8 Maximum Clamping Voltage @ IPPM Vc V 9.6 9.2 11.4 10.3 12.3 11.2 13.3 12.0 14.3 12.9 15.0 13.6 15.9 14.4 16.9 15.4 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.0 45.4 Version: N1602 SMBJ SERIES Taiwan Semiconductor CREAT BY ART Device SMBJ30 SMBJ30A SMBJ33 SMBJ33A SMBJ36 SMBJ36A SMBJ40 SMBJ40A SMBJ43 SMBJ43A SMBJ45 SMBJ45A SMBJ48 SMBJ48A SMBJ51 SMBJ51A SMBJ54 SMBJ54A SMBJ58 SMBJ58A SMBJ60 SMBJ60A SMBJ64 SMBJ64A SMBJ70 SMBJ70A SMBJ75 SMBJ75A SMBJ78 SMBJ78A SMBJ85 SMBJ85A SMBJ90 SMBJ90A SMBJ100 SMBJ100A SMBJ110 SMBJ110A SMBJ120 SMBJ120A SMBJ130 SMBJ130A Device Marking Code MH MK ML MM MN MP MQ MR MS MT MU MV MW MX MY MZ ND NE NF NG NH NK NL NM NN NP NQ NR NS NT NU NV NW NX NY NZ PD PE PF PG PH PK Breakdown Voltage (Note 1) Test Current Stand-Off Voltage VBR V IT mA VWM V Maximum Reverse Leakage @ VWM IR μA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 30 30 33 33 36 36 40 40 43 43 45 45 48 48 51 51 54 54 58 58 60 60 64 64 70 70 75 75 78 78 85 85 90 90 100 100 110 110 120 120 130 130 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Min. 33.3 33.3 36.7 36.7 40.0 40.0 44.4 44.4 47.8 47.8 50.0 50.0 53.3 53.3 56.7 56.7 60.0 60.0 64.4 64.4 66.7 66.7 71.1 71.1 77.8 77.8 83.3 83.3 86.7 86.7 94.4 94.4 100 100 111 111 122 122 133 133 144 144 Max. 40.7 36.8 44.9 40.6 48.9 44.2 54.3 49.1 58.4 52.8 61.1 55.3 65.1 58.9 69.3 62.7 73.3 66.3 78.7 71.2 81.5 73.7 86.9 78.6 95.1 86 102 92.1 106 95.8 115 104 122 111 136 123 149 135 163 147 176 159 Maximum Peak Pulse Current IPPM A (Note 2) 11.7 13.0 10.6 11.8 9.8 10.8 8.8 9.7 8.2 9.0 7.8 8.6 7.3 8.1 6.9 7.6 6.5 7.2 6.1 6.7 5.8 6.5 5.5 6.1 5.0 5.5 4.7 5.2 4.5 5.0 4.1 4.6 3.9 4.3 3.5 3.8 3.2 3.5 2.9 3.2 2.7 3.0 Maximum Clamping Voltage @ IPPM Vc V 53.5 48.4 59.0 53.3 64.3 58.1 71.4 64.5 76.7 69.4 80.3 72.7 85.5 77.4 91.1 82.4 96.3 87.1 103 93.6 107 96.8 114 103 125 113 134 121 139 126 151 137 160 146 179 162 196 177 214 193 231 209 Version: N1602 SMBJ SERIES Taiwan Semiconductor CREAT BY ART Device SMBJ150 SMBJ150A SMBJ160 SMBJ160A SMBJ170 SMBJ170A Device Marking Code PL PM PN PP PQ PR Breakdown Voltage (Note 1) Test Current Stand-Off Voltage VBR V IT mA VWM V Maximum Reverse Leakage @ VWM IR μA 1 1 1 1 1 1 150 150 160 160 170 170 1 1 1 1 1 1 Min. 167 167 178 178 189 189 Max. 204 185 218 197 231 209 Maximum Peak Pulse Current IPPM A (Note 2) 2.3 2.5 2.2 2.4 2.0 2.2 Maximum Clamping Voltage @ IPPM Vc V 266 243 287 259 304 275 Notes: 1. VBR measure after IT applied for 300μs, IT=square wave pulse or equivalent. 2. Surge current waveform per figure. 3 and derate per figure. 2. 3. All terms and symbols are consistent with ANSI/IEEE C62.35. 4. For bidirectional use C or CA suffix for types SMBJ5.0 - SMBJ170 5. For bipolar types having VWM of 10 volts (SMBJ8.0C) and under, the IR limit is doubled. Version: N1602 SMBJ SERIES Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) Unit (mm) DIM. Unit (inch) Min Max Min Max A 1.95 2.10 0.077 0.083 B 4.25 4.75 0.167 0.187 C 3.48 3.73 0.137 0.147 D 1.99 2.61 0.078 0.103 E 0.90 1.41 0.035 0.056 F 5.10 5.30 0.201 0.209 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 2.3 0.091 B 2.5 0.098 C 4.3 0.169 D 1.8 0.071 E 6.8 0.268 MARKING DIAGRAM P/N = Device Marking Code G= Green Compound YW = Date Code F= Factory Code Note: Cathode band for uni-directional products only Version: N1602 SMBJ SERIES Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Version: N1602