SFS1001G - SFS1008G Taiwan Semiconductor CREAT BY ART 10A, 50V - 600V Surface Mount Super Fast Rectifiers FEATURES - Low forward voltage drop - Ideal for automated placement - High current capability - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition 2 TO-263AB (D PAK) MECHANICAL DATA Case: TO-263AB (D2PAK) Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.37 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SFS PARAMETER SYMBOL SFS SFS SFS SFS SFS SFS SFS 1001 1002 1003 1004 1005 1006 1007 1008 G G G G G G G G UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 500 600 V Maximum average forward rectified current IF(AV) 10 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 125 A Maximum instantaneous forward voltage (Note 1) IF= 5 A Maximum reverse current @ rated VR TJ=25°C TJ=125°C VF trr Typical junction capacitance (Note 3) CJ Operating junction temperature range Storage temperature range 1.3 1.7 1 IR Maximum reverse recovery time (Note 2) Typical thermal resistance 0.975 μA 200 35 70 V ns 50 pF RθJC 2 °C/W TJ - 55 to +150 °C TSTG - 55 to +150 °C Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS_D1405076 Version: H15 SFS1001G - SFS1008G Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. PACKING CODE PACKING CODE SUFFIX SFS100xG (Note 1) H SUFFIX RN PACKAGE 800 / 13" Paper reel D2PAK G MN PACKING (*) 800 / 13" Plastic reel Note 1: "x" defines voltage from 50V (SFS1001G) to 600V (SFS1008G) *: Optional available EXAMPLE PREFERRED P/N PART NO. SFS1008GHRNG SFS1008G PART NO. PACKING CODE PACKING CODE SUFFIX H DESCRIPTION SUFFIX RN AEC-Q101 qualified Green compound G RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG. 2 TYPICAL REVERSE CHARACTERISTICS FIG.1 FORWARD CURRENT DERATING CURVE INSTANTANEOUS REVERSE CURRENT (μA) 1000 12 AVERAGE FORWARD A CURRENT (A) 10 8 6 4 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 2 0 25 50 75 100 CASE TEMPERATURE (oC) 125 150 120 90 60 30 0 10 NUMBER OF CYCLES AT 60 Hz Document Number: DS_D1405076 1 TJ=25°C 0.1 20 40 60 80 100 120 140 FIG. 4 TYPICAL FORWARD CHARACTERISTICS 100 8.3ms Single Half Sine Wave 1 TJ=75°C PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 150 TJ=100°C 10 0 INSTANTANEOUS FORWARD CURRENT (A) PEAK FORWARD SURGE CURRENT (A) 0 100 100 Pulse Width=300μs 1% Duty Cycle 10 SFS1001G-SFS1004G 1 SFS1005G-SFS1006G SFS1007G-SFS1008G 0.1 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) Version: H15 SFS1001G - SFS1008G Taiwan Semiconductor FIG. 5 TYPICAL JUNCTION CAPACITANCE 100 f=1.0MHz Vsig=50mVp-p CAPACITANCE (pF) 90 SFS1001G-SFS1004G 80 70 SFS1005G-SFS1008G 60 50 40 1 10 REVERSE VOLTAGE (V) 100 PACKAGE OUTLINE DIMENSIONS 2 TO-263AB (D PAK) DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.5 - 0.413 B 14.60 15.88 0.575 0.625 C 2.41 2.67 0.095 0.105 D 0.68 0.94 0.027 0.037 E 2.29 2.79 0.090 0.110 F 4.44 4.70 0.175 0.185 G 1.14 1.40 0.045 0.055 H 1.14 1.40 0.045 0.055 I 8.25 9.25 0.325 0.364 J 0.36 0.53 0.014 0.021 K 2.03 2.79 0.080 0.110 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 10.8 0.425 B 8.3 0.327 C 1.1 0.043 D 3.5 0.138 E 16.9 0.665 F 9.5 0.374 G 2.5 0.098 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1405076 Version: H15 SFS1001G - SFS1008G Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1405076 Version: H15