UGA8120_C15.pdf

UGA8120
Taiwan Semiconductor
CREAT BY ART
8A, 1200V Super Fast Power Rectifier
FEATURES
C
- Super Fast, Soft Recovery characteristics
- High junction temperature up to 175°C
- Negligible leakage sustain the high operation temperature
- Very low stored charge and its soft recovery minimize ringing and
electrical noise to reduce power loss in associated MOSFET or IGBT
1
- High capability for high dI/dt operation.
- High surge current capability
2
TO-220AC
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
TYPICAL APPLICATIONS
The UGA8120 is an ideal solution for being used as freewheeling diodes, featuring extremely low peak recovery current to
significantly reduce snubbing, and lowering switching losses in IGBT / MOSFET.
It is especially suited for heavy duty applications with demanding long term reliability such as inverters,
uninterrupted power supplies, motor drives and other mission-critical systems,
where high frequency and high efficiency is being needed.
Another competitive advantage of this device is the negligible leakage for use in high temperature environment.
MECHANICAL DATA
Case: TO-220AC
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm maximum
Weight: 1.85g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
UGA8120
UNIT
Maximum repetitive peak reverse voltage
VRRM
1200
V
Maximum average forward rectified current
IF(AV)
8
A
Non-repetitive peak forward surge current
8.3ms single sine-wave
IFSM
80
A
VF
2.8
V
Maximum instantaneous forward voltage (Note 1)
IF= 8 A
Maximum reverse current @ Rated VR
TYP
MAX
1
5
5
100
TYP
MAX
35
50
TJ=25°C, IF=1A, dIF/dt= -100A/µs, VR=30V
50
70
Reverse Recovery Charges
TJ=25°C, IF=8A, dIF/dt= -200A/µs, VR=400V
TYP
MAX
Qrr
165
-
nC
IRM
11
16
A
TJ=25 °C
TJ=125 °C
IR
Reverse Recovery Time
TJ=25°C, IF=0.5A, IR=1A, IRR=0.25A
TJ=125°C, IF=8A, dIF/dt= -200A/µs, VR=400V
Typical thermal resistance
Operating junction temperature range
Storage temperature range
trr
μA
ns
RθJC
2.3
°C/W
TJ
- 55 to +175
°C
TSTG
- 55 to +175
°C
Note 1: Pulse test with PW=300μs, 1% duty cycle
Document Number: DS_D1405001
Version: C15
UGA8120
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
PACKING
SUFFIX
CODE
H
C0
UGA8120
PACKING CODE
SUFFIX
(*)
G
PACKAGE
PACKING
TO-220AC
50 / Tube
*: Optional available
EXAMPLE
EXAMPLE P/N
PART NO.
UGA8120HC0G
UGA8120
PART NO.
PACKING CODE
SUFFIX
PACKING CODE
C0
H
DESCRIPTION
SUFFIX
AEC-Q101 qualified
Green compound
G
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
AVERAGE FORWARD A
CURRENT (A)
10
8
6
4
Resistive or
inductive load
with heat sink
2
0
0
25
50
75
100
125
150
175
PEAK FORWARD SURGE CURRENT (A)
FIG.1 FORWARD CURRENT DERATING CURVE
100
8.3ms single half sine wave
75
50
25
1
10
CASE TEMPERATURE (°C)
FIG. 3 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
10
100
Pulse width=300μs
1% duty cycle
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
100
NUMBER OF CYCLES AT 60 Hz
10
TJ=125°C
TJ=25°C
1
TJ=125°C
1
0.1
TJ=25°C
0.01
0.1
0
0.5
1
1.5
2
FORWARD VOLTAGE (V)
Document Number: DS_D1405001
2.5
3
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Version: C15
UGA8120
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE (pF) A
100
10
f=1.0MHz
Vsig=50mVp-p
1
0.1
1
10
100
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
TO-220AC
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
-
10.50
-
0.413
B
2.62
3.44
0.103
0.135
C
2.80
4.20
0.110
0.165
D
0.68
0.94
0.027
0.037
E
3.54
4.00
0.139
0.157
F
14.60
16.00
0.575
0.630
G
0.00
1.60
0.000
0.063
H
13.19
14.79
0.519
0.582
I
4.95
5.20
0.195
0.205
J
4.42
4.76
0.174
0.187
K
1.14
1.40
0.045
0.055
L
5.84
6.86
0.230
0.270
M
2.20
2.80
0.087
0.110
N
0.35
0.64
0.014
0.025
O
1.14
1.77
0.045
0.070
MARKING DIAGRAM
P/N
= Specific Device Code
G
= Green Compound
YWW
= Date Code
F
= Factory Code
Document Number: DS_D1405001
Version: C15
UGA8120
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1405001
Version: C15