UGA8120 Taiwan Semiconductor CREAT BY ART 8A, 1200V Super Fast Power Rectifier FEATURES C - Super Fast, Soft Recovery characteristics - High junction temperature up to 175°C - Negligible leakage sustain the high operation temperature - Very low stored charge and its soft recovery minimize ringing and electrical noise to reduce power loss in associated MOSFET or IGBT 1 - High capability for high dI/dt operation. - High surge current capability 2 TO-220AC - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 TYPICAL APPLICATIONS The UGA8120 is an ideal solution for being used as freewheeling diodes, featuring extremely low peak recovery current to significantly reduce snubbing, and lowering switching losses in IGBT / MOSFET. It is especially suited for heavy duty applications with demanding long term reliability such as inverters, uninterrupted power supplies, motor drives and other mission-critical systems, where high frequency and high efficiency is being needed. Another competitive advantage of this device is the negligible leakage for use in high temperature environment. MECHANICAL DATA Case: TO-220AC Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 0.56 Nm maximum Weight: 1.85g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL UGA8120 UNIT Maximum repetitive peak reverse voltage VRRM 1200 V Maximum average forward rectified current IF(AV) 8 A Non-repetitive peak forward surge current 8.3ms single sine-wave IFSM 80 A VF 2.8 V Maximum instantaneous forward voltage (Note 1) IF= 8 A Maximum reverse current @ Rated VR TYP MAX 1 5 5 100 TYP MAX 35 50 TJ=25°C, IF=1A, dIF/dt= -100A/µs, VR=30V 50 70 Reverse Recovery Charges TJ=25°C, IF=8A, dIF/dt= -200A/µs, VR=400V TYP MAX Qrr 165 - nC IRM 11 16 A TJ=25 °C TJ=125 °C IR Reverse Recovery Time TJ=25°C, IF=0.5A, IR=1A, IRR=0.25A TJ=125°C, IF=8A, dIF/dt= -200A/µs, VR=400V Typical thermal resistance Operating junction temperature range Storage temperature range trr μA ns RθJC 2.3 °C/W TJ - 55 to +175 °C TSTG - 55 to +175 °C Note 1: Pulse test with PW=300μs, 1% duty cycle Document Number: DS_D1405001 Version: C15 UGA8120 Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. PACKING SUFFIX CODE H C0 UGA8120 PACKING CODE SUFFIX (*) G PACKAGE PACKING TO-220AC 50 / Tube *: Optional available EXAMPLE EXAMPLE P/N PART NO. UGA8120HC0G UGA8120 PART NO. PACKING CODE SUFFIX PACKING CODE C0 H DESCRIPTION SUFFIX AEC-Q101 qualified Green compound G RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT AVERAGE FORWARD A CURRENT (A) 10 8 6 4 Resistive or inductive load with heat sink 2 0 0 25 50 75 100 125 150 175 PEAK FORWARD SURGE CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 100 8.3ms single half sine wave 75 50 25 1 10 CASE TEMPERATURE (°C) FIG. 3 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 4 TYPICAL REVERSE CHARACTERISTICS 10 100 Pulse width=300μs 1% duty cycle INSTANTANEOUS REVERSE CURRENT (μA) INSTANTANEOUS FORWARD CURRENT (A) 100 NUMBER OF CYCLES AT 60 Hz 10 TJ=125°C TJ=25°C 1 TJ=125°C 1 0.1 TJ=25°C 0.01 0.1 0 0.5 1 1.5 2 FORWARD VOLTAGE (V) Document Number: DS_D1405001 2.5 3 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: C15 UGA8120 Taiwan Semiconductor FIG. 5 TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE (pF) A 100 10 f=1.0MHz Vsig=50mVp-p 1 0.1 1 10 100 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS TO-220AC DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.50 - 0.413 B 2.62 3.44 0.103 0.135 C 2.80 4.20 0.110 0.165 D 0.68 0.94 0.027 0.037 E 3.54 4.00 0.139 0.157 F 14.60 16.00 0.575 0.630 G 0.00 1.60 0.000 0.063 H 13.19 14.79 0.519 0.582 I 4.95 5.20 0.195 0.205 J 4.42 4.76 0.174 0.187 K 1.14 1.40 0.045 0.055 L 5.84 6.86 0.230 0.270 M 2.20 2.80 0.087 0.110 N 0.35 0.64 0.014 0.025 O 1.14 1.77 0.045 0.070 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1405001 Version: C15 UGA8120 Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1405001 Version: C15