DATASHEET

HFA3102
®
Data Sheet
July 14, 2005
FN3635.5
Dual Long-Tailed Pair Transistor Array
Features
The HFA3102 is an all NPN transistor array configured as
dual differential amplifiers with tail transistors. Based on
Intersil bonded wafer UHF-1 SOI process, this array
achieves very high fT (10GHz) while maintaining excellent
hFE and VBE matching characteristics over temperature.
Collector leakage currents are maintained to under 0.01nA.
• High Gain-Bandwidth Product (fT) . . . . . . . . . . . . . 10GHz
Ordering Information
PART NUMBER
TEMP.
RANGE (°C)
• High Power Gain-Bandwidth Product. . . . . . . . . . . . 5GHz
• High Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . 70
• Noise Figure (Transistor) . . . . . . . . . . . . . . . . . . . . . 3.5dB
• Low Collector Leakage Current . . . . . . . . . . . . . . <0.01nA
• Excellent hFE and VBE Matching
PKG.
DWG. #
PACKAGE
HFA3102B96
-40 to 85
14 Ld SOIC Tape
and Reel
M14.15
HFA3102BZ
(Note)
-40 to 85
14 Ld SOIC
(Pb-free)
M14.15
HFA3102BZ96
(Note)
-40 to 85
14 Ld SOIC Tape M14.15
and Reel (Pb-free)
• Pin-to-Pin to UPA102G
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
• Single Balanced Mixers
• Wide Band Amplification Stages
• Differential Amplifiers
• Multipliers
• Automatic Gain Control Circuits
• Frequency Doublers, Tripplers
• Oscillators
• Constant Current Sources
Pinout/Functional Diagram
• Wireless Communication Systems
HFA3102 (SOIC)
TOP VIEW
• Radio and Satellite Communications
• Fiber Optic Signal Processing
14
13
Q1
12
11
10
2
Q4
3
8
• High Performance Instrumentation
Q6
Q2
Q3
1
9
4
5
1
Q5
6
7
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2003, 2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
HFA3102
Absolute Maximum Ratings TA = 25°C
Thermal Information
VCEO Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . 8.0V
VCBO Collector to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . 12.0V
VEBO Emitter to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . 12.0V
IC , Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Thermal Resistance (Typical, Note 1)
θJA (°C/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
128
Maximum Power Dissipation at 75°
Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.25W
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . 175°C
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to 85°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TA = 25°C
TEST CONDITIONS
ALL GRADES
(NOTE 2)
TEST
LEVEL
MIN
TYP
MAX
UNITS
SYMBOLS
PARAMETER
V(BR)CBO
Collector-to-Base Breakdown Voltage (Q1,
Q2, Q4, and Q5)
IC = 100µA, IE = 0
A
12
18
-
V
V(BR)CEO
Collector-to-Emitter Breakdown
Voltage (Q1 thru Q6)
IC = 100µA, IB = 0
A
8
12
-
V
V(BR)EBO
Emitter-to-Base Breakdown Voltage (Q3
and Q6)
IE = 50µA, IC = 0
A
5.5
6
-
V
ICBO
Collector Cutoff Current
(Q1, Q2, Q4, and Q5)
VCB = 5V, IE = 0
A
-
0.1
10
νΑ
IEBO
Emitter Cutoff Current (Q3 and Q6)
VEB = 1V, IC = 0
A
-
-
100
νΑ
hFE
DC Current Gain (Q1 thru Q6)
IC = 10mA, VCE = 3V
A
40
70
-
-
CCB
Collector-to-Base Capacitance
VCB = 5V, f = 1MHz
B
-
300
-
fF
CEB
Emitter-to-Base Capacitance
VEB = 0, f = 1MHz
B
-
200
-
fF
fT
Current Gain-Bandwidth Product
IC = 10mA, VCE = 5V
C
-
10
-
GHz
fMAX
Power Gain-Bandwidth Product
IC = 10mA, VCE = 5V
C
-
5
-
GHz
Available Gain at Minimum Noise Figure
IC = 3mA,
VCE = 3V
f = 0.5GHz
C
-
17.5
-
dB
f = 1.0GHz
C
-
12.4
-
dB
f = 0.5GHz
C
-
1.8
-
dB
GNFMIN
NFMIN
Minimum Noise Figure
IC = 3mA,
VCE = 3V
NF50Ω
50Ω Noise Figure
IC = 3mA,
VCE = 3V
hFE1/hFE2
f = 1.0GHz
C
-
2.1
-
dB
f = 0.5GHz
C
-
3.3
-
dB
f = 1.0GHz
C
-
3.5
-
dB
DC Current Gain Matching
(Q1 and Q2, Q4 and Q5)
IC = 10mA, VCE = 3V
A
0.9
1.0
1.1
-
VOS
Input Offset Voltage (Q1 and Q2),
(Q4 and Q5)
IC = 10mA, VCE = 3V
A
-
1.5
5
mV
IOS
Input Offset Current (Q1 and Q2),
(Q4 and Q5)
IC = 10mA, VCE = 3V
A
-
5
25
µA
dVOS/dT
Input Offset Voltage TC
(Q1 and Q2, Q4 and Q5)
IC = 10mA, VCE = 3V
C
-
0.5
-
µV/°C
ITRENCH-
Collector-to-Collector Leakage
(Pin 6, 7, 13, and 14)
∆VTEST = 5V
B
-
0.01
-
nA
LEAKAGE
NOTE:
2. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only
2
FN3635.5
July 14, 2005
HFA3102
PSPICE Model for a Single Transistor
.Model NUHFARRY NPN
+ ( IS= 1.840E-16
VAF= 7.200E+01
+ VAR= 4.500E+00
NE= 1.400E+00
XTI= 3.000E+00
EG= 1.110E+00
BF= 1.036E+02
ISE= 1.686E-19
+ IKF= 5.400E-02
ISC= 1.605E-14
XTB= 0.000E+00
BR= 1.000E+01
+ NC= 1.800E+00
CJC= 3.980E-13
IKR= 5.400E-02
RC= 1.140E+01
+ MJC= 2.400E-01
CJE= 2.400E-13
VJC= 9.700E-01
FC= 5.000E-01
+ MJE= 5.100E-01
TF= 10.51E-12
VJE= 8.690E-01
TR= 4.000E-09
+ ITF= 3.500E-02
PTF= 0.000E+00
+ XCJC= 9.000E-01
MJS= 0.000E+00
+ RE= 1.848E+00
KF= 0.000E+00
XTF= 2.300E+00
CJS= 1.689E-13
RB= 5.007E+01
VTF= 3.500E+00
VJS= 9.982E-01
RBM= 1.974E+00
+ AF= 1.000E+00)
3
FN3635.5
July 14, 2005
HFA3102
Common Emitter S-Parameters
VCE = 5V and IC = 5mA
FREQ. (Hz)
|S11|
PHASE(S11)
|S12|
PHASE(S12)
|S21|
PHASE(S21)
|S22|
PHASE(S22)
1.0E+08
0.833079
-11.7873
1.418901E-02
78.8805
11.0722
168.576
0.976833
-11.0509
2.0E+08
0.791776
-22.8290
2.695740E-02
68.6355
10.5177
157.897
0.930993
-21.3586
3.0E+08
0.734911
-32.6450
3.750029E-02
59.5861
9.75379
148.443
0.868128
-30.4451
4.0E+08
0.672811
-41.0871
4.572138E-02
51.9018
8.91866
140.361
0.799886
-38.1641
5.0E+08
0.612401
-48.2370
5.194147E-02
45.5043
8.10511
133.569
0.734033
-44.5998
6.0E+08
0.557126
-54.2780
5.659943E-02
40.2112
7.35944
127.882
0.674392
-49.9370
7.0E+08
0.508133
-59.4102
6.009507E-02
35.8226
6.69712
123.102
0.622181
-54.3777
8.0E+08
0.465361
-63.8123
6.274213E-02
32.1594
6.11750
119.047
0.577269
-58.1022
9.0E+08
0.428238
-67.6313
6.477134E-02
29.0743
5.61303
115.571
0.538952
-61.2587
1.0E+09
0.396034
-70.9834
6.634791E-02
26.4506
5.17405
112.556
0.506365
-63.9647
1.1E+09
0.368032
-73.9591
6.758932E-02
24.1974
4.79104
109.913
0.478663
-66.3116
1.2E+09
0.343589
-76.6285
6.857937E-02
22.2441
4.45546
107.570
0.455091
-68.3702
1.3E+09
0.322155
-79.0462
6.937837E-02
20.5358
4.15997
105.472
0.435008
-70.1958
1.4E+09
0.303268
-81.2548
7.003020E-02
19.0293
3.89845
103.576
0.417872
-71.8314
1.5E+09
0.286542
-83.2880
7.056718E-02
17.6908
3.66577
101.849
0.403238
-73.3108
1.6E+09
0.271660
-85.1723
7.101343E-02
16.4930
3.45770
100.262
0.390735
-74.6609
1.7E+09
0.258359
-86.9292
7.138717E-02
15.4143
3.27074
98.7956
0.380056
-75.9030
1.8E+09
0.246420
-88.5759
7.170231E-02
14.4370
3.10197
97.4307
0.370947
-77.0544
1.9E+09
0.235659
-90.1265
7.196964E-02
13.5469
2.94897
96.1533
0.363195
-78.1288
2.0E+09
0.225923
-91.5925
7.219757E-02
12.7319
2.80969
94.9515
0.356623
-79.1377
2.1E+09
0.217085
-92.9836
7.239274E-02
11.9824
2.68243
93.8156
0.351081
-80.0903
2.2E+09
0.209034
-94.3076
7.256046E-02
11.2901
2.56573
92.7373
0.346442
-80.9942
2.3E+09
0.201678
-95.5713
7.270498E-02
10.6480
2.45837
91.7097
0.342599
-81.8557
2.4E+09
0.194939
-96.7803
7.282977E-02
10.0503
2.35928
90.7271
0.339458
-82.6802
2.5E+09
0.188747
-97.9395
7.293764E-02
9.49212
2.26756
89.7844
0.336942
-83.4719
2.6E+09
0.183044
-99.0530
7.303093E-02
8.96908
2.18243
88.8775
0.334982
-84.2347
2.7E+09
0.177780
-100.124
7.311157E-02
8.47753
2.10322
88.0026
0.333518
-84.9716
2.8E+09
0.172909
-101.156
7.318117E-02
8.01430
2.02934
87.1565
0.332499
-85.6853
2.9E+09
0.168394
-102.152
7.324107E-02
7.57661
1.96027
86.3366
0.331879
-86.3781
3.0E+09
0.164200
-103.114
7.329243E-02
7.16204
1.89556
85.5404
0.331620
-87.0518
VCE = 5V and IC = 10mA
FREQ. (Hz)
|S11|
PHASE(S11)
|S12|
PHASE(S12)
|S21|
PHASE(S21)
|S22|
PHASE(S22)
1.0E+08
0.728106
-16.4319
1.273920E-02
75.4177
15.1273
165.227
0.959692
-14.2688
2.0E+08
0.670836
-31.2669
2.342300E-02
62.8941
13.9061
152.045
0.886232
-26.9507
3.0E+08
0.600268
-43.7663
3.132521E-02
52.5891
12.3970
141.185
0.796016
-37.3172
4.0E+08
0.531768
-54.0028
3.681579E-02
44.5019
10.9257
132.570
0.708892
-45.4503
5.0E+08
0.471795
-62.3880
4.057046E-02
38.2308
9.62995
125.781
0.633146
-51.7704
6.0E+08
0.421506
-69.3569
4.316292E-02
33.3405
8.53559
120.378
0.570209
-56.7206
7.0E+08
0.379961
-75.2612
4.499071E-02
29.4764
7.62375
116.005
0.518803
-60.6598
8.0E+08
0.345693
-80.3608
4.631140E-02
26.3755
6.86423
112.398
0.476987
-63.8540
4
FN3635.5
July 14, 2005
HFA3102
VCE = 5V and IC = 10mA (Continued)
FREQ. (Hz)
|S11|
PHASE(S11)
|S12|
PHASE(S12)
|S21|
PHASE(S21)
|S22|
PHASE(S22)
1.0E+08
0.728106
-16.4319
1.273920E-02
75.4177
15.1273
165.227
0.959692
-14.2688
9.0E+08
0.317301
-84.8420
4.728948E-02
23.8481
6.22797
109.365
0.442915
-66.4948
1.0E+09
0.293608
-88.8381
4.803091E-02
21.7581
5.69057
106.771
0.415044
-68.7193
1.1E+09
0.273680
-92.4452
4.860515E-02
20.0070
5.23257
104.518
0.392146
-70.6269
1.2E+09
0.256782
-95.7336
4.905871E-02
18.5224
4.83873
102.532
0.373261
-72.2899
1.3E+09
0.242344
-98.7555
4.942344E-02
17.2505
4.49716
100.759
0.357640
-73.7620
1.4E+09
0.229918
-101.551
4.972158E-02
16.1506
4.19854
99.1602
0.344698
-75.0832
1.5E+09
0.219152
-104.150
4.996903E-02
15.1915
3.93554
97.7028
0.333974
-76.2840
1.6E+09
0.209767
-106.577
5.017730E-02
14.3490
3.70234
96.3629
0.325102
-77.3877
1.7E+09
0.201539
-108.851
5.035491E-02
13.6040
3.49428
95.1215
0.317789
-78.4122
1.8E+09
0.194288
-110.988
5.050825E-02
12.9411
3.30758
93.9633
0.311800
-79.3715
1.9E+09
0.187867
-113.001
5.064218E-02
12.3482
3.13919
92.8761
0.306940
-80.2768
2.0E+09
0.182157
-114.902
5.076045E-02
11.8151
2.98658
91.8500
0.303051
-81.1365
2.1E+09
0.177056
-116.698
5.086598E-02
11.3338
2.84766
90.8766
0.300003
-81.9578
2.2E+09
0.172484
-118.399
5.096107E-02
10.8974
2.72068
89.9494
0.297686
-82.7460
2.3E+09
0.168370
-120.012
5.104755E-02
10.5001
2.60420
89.0626
0.296007
-83.5057
2.4E+09
0.164656
-121.542
5.112690E-02
10.1373
2.49697
88.2115
0.294889
-84.2405
2.5E+09
0.161293
-122.996
5.120031E-02
9.80479
2.39793
87.3920
0.294266
-84.9533
2.6E+09
0.158239
-124.378
5.126876E-02
9.49919
2.30619
86.6007
0.294081
-85.6466
2.7E+09
0.155458
-125.694
5.133304E-02
9.21750
2.22098
85.8348
0.294285
-86.3223
2.8E+09
0.152919
-126.947
5.139381E-02
8.95716
2.14162
85.0916
0.294836
-86.9822
2.9E+09
0.150595
-128.140
5.145164E-02
8.71595
2.06753
84.3690
0.295696
-87.6275
3.0E+09
0.148463
-129.279
5.150697E-02
8.49194
1.99820
83.6651
0.296834
-88.2595
Typical Performance Curves
140
12
IB = 150µA
120
10
IB = 120µA
100
IB = 90µA
hFE
IC (mA)
8
6
IB = 60µA
4
60
40
IB = 30µA
2
0
80
20
0
1
2
3
VCE (V)
FIGURE 1. IC vs VCE
5
4
5
0
10-10
10-8
10-6
10-4
IC (A)
10-2
100
FIGURE 2. hFE vs IC
FN3635.5
July 14, 2005
HFA3102
Typical Performance Curves
(Continued)
100
12
VCE = 5V
10-2
10
10-4
8
fT (GHz)
IC AND IB (A)
VCE = 3V
10-6
10-8
6
4
10-10
2
10-12
0.4
0.6
VBE (V)
0.8
0
10-4
1.0
20
4.6
18
4.4
16
4.2
14
4.0
12
3.8
10
3.6
8
3.4
6
3.2
4
0.5
1.0
1.5
2.0
2.5
40
3.0
FREQUENCY (GHz)
FIGURE 5. GAIN AND NOISE FIGURE vs FREQUENCY
6
POUT, OUTPUT POWER (dBm)
4.8
0
IC (A)
10-2
10-1
FIGURE 4. fT vs IC
|S21| (dB)
NOISE FIGURE (dB)
FIGURE 3. GUMMEL PLOT
10-3
20
3rd ORDER INTERCEPT POINT
1dB COMPRESSION POINT
0
-20
-40
-60
-80
-100
-30
VCE = 5V
IC = 10mA
f = 1GHz
3RD ORDER PRODUCTS
-20
-10
0
PIN , INPUT POWER (dBm)
10
FIGURE 6. P1dB AND 3RD ORDER INTERCEPT
FN3635.5
July 14, 2005
HFA3102
Die Characteristics
METALLIZATION:
Type: Metal 1: AlCu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.5kÅ
Type: Metal 2: AlCu(2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
PROCESS:
UHF-1
DIE DIMENSIONS:
53 mils x 52 mils x 14 mils
1340µm x 1320µm x 355.6µm
PASSIVATION:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
SUBSTRATE POTENTIAL (POWERED UP):
Floating
Metallization Mask Layout
HFA3102
TOP VIEW
2
1
14
13
12
3
11
1340µm
(53 mils)
4
10
5
6
7
8
9
1320µm
(52 mils)
Pad numbers correspond to the 14 pin SOIC pinout.
7
FN3635.5
July 14, 2005
HFA3102
Small Outline Plastic Packages (SOIC)
M14.15 (JEDEC MS-012-AB ISSUE C)
N
INDEX
AREA
H
0.25(0.010) M
14 LEAD NARROW BODY SMALL OUTLINE PLASTIC
PACKAGE
B M
E
INCHES
-B-
1
2
3
L
SEATING PLANE
-A-
h x 45o
A
D
-C-
e
α
A1
B
0.25(0.010) M
C A M
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.0532
0.0688
1.35
1.75
-
A1
0.0040
0.0098
0.10
0.25
-
B
0.013
0.020
0.33
0.51
9
C
0.0075
0.0098
0.19
0.25
-
D
0.3367
0.3444
8.55
8.75
3
E
0.1497
0.1574
3.80
4.00
4
e
C
0.10(0.004)
B S
0.050 BSC
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
1.27 BSC
-
H
0.2284
0.2440
5.80
6.20
-
h
0.0099
0.0196
0.25
0.50
5
L
0.016
0.050
0.40
1.27
6
N
NOTES:
MILLIMETERS
α
14
0o
14
8o
0o
7
8o
Rev. 0 12/93
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
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8
FN3635.5
July 14, 2005