DATASHEET

HFA3134, HFA3135
®
Data Sheet
August 12, 2005
Ultra High Frequency Matched Pair
Transistors
Features
The HFA3134 and HFA3135 are Ultra High Frequency
Transistor pairs that are fabricated with Intersil Corporation’s
complementary bipolar UHF-1X process. The NPN
transistors exhibit an fT of 8.5GHz, while the PNP transistors
have an fT of 7GHz. Both types exhibit low noise, making
them ideal for high frequency amplifier and mixer
applications.
Both arrays are matched high frequency transistor pairs. The
matching simplifies DC bias problems and it minimizes
imbalances in differential amplifier configurations. Their high
fT enables the design of UHF amplifiers which exhibit
exceptional stability.
Ordering Information
PART NUMBER
TEMP.
(BRAND)
RANGE (°C)
FN4445.2
• NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 8.5GHz
• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 100
• NPN Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . 2.6dB
• PNP Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . . 7GHz
• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 57
• PNP Noise Figure (50Ω) at 900MHz . . . . . . . . . . . . 4.6dB
• Small Package (EIAJ-SC74 Compliant) . . . . . . . .SOT23-6
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
PACKAGE
PKG.
DWG. #
HFA3134IH96
(04/ )
-40 to 85
6 Ld SOT23
Tape and Reel
P6.064
HFA3134IHZ96
(4Z/ ) (Note)
-40 to 85
6 Ld SOT23
P6.064
Tape and Reel (Pb-free)
HFA3135IH96
(05/ )
-40 to 85
6 Ld SOT23
Tape and Reel
HFA3135IHZ96
(5Z/ ) (Note)
-40 to 85
6 Ld SOT23
P6.064
Tape and Reel (Pb-free)
• IF Converters
• Synchronous Detectors
Pinouts
HFA3134
(SOT23)
TOP VIEW
P6.064
04
4Z
05
Z5
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
1
Q1
5
2
3
6
Q2
4
HFA3135
(SOT23)
TOP VIEW
1
Q1
5
2
3
1
6
Q2
4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2000, 2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
HFA3134, HFA3135
Absolute Maximum Ratings
Thermal Information
Collector to Emitter Voltage (RB ≤ 10kΩ to GND) . . . . . . . . . . . . 11V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V
Collector Current . . . . . . . . . . . . . . . . . . . . . . . . 14mA at TJ =150°C
26mA at TJ =125°C
Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V
(Per MIL-STD-883 Method 3015.7)
Thermal Resistance (Typical, Note 1)
θJA (°C/W)
SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . .
350
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . 175°C
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
(Soldering 10s, Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to 85°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current
specification.
Electrical Specifications
TA = 25°C
PARAMETER
SYMBOL
TEST CONDITIONS
(NOTE 3)
TEST
LEVEL
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS FOR HFA3134 (NPN)
Collector to Base Breakdown Voltage
V(BR)CBO
IC = 10µA, IE = 0
A
12
21
-
V
Collector to Emitter Breakdown Voltage
V(BR)CEO
IC = 100µA, IB = 0
A
4
9
-
V
V(BR)CER
IC = 100µA, RB = 10kΩ
A
11
17
-
V
V(BR)EBO
IE = 10µA, IC = 0
B
-
6
-
V
Collector-Cutoff-Current
ICEO
VCE = 6V, IB = 0
A
-5
-
5
nA
Collector-Cutoff-Current
ICBO
VCB = 8V, IE = 0
A
-5
-
5
nA
Emitter-Cutoff-Current (Note 5)
IEBO
VEB = 1V, IC = 0
B
-
1
-
pA
C
-
1
-
nA
Emitter to Base Breakdown Voltage (Note 4)
Collector to Collector Leakage
Collector to Emitter Saturation Voltage
Base to Emitter Voltage (Note 5)
Q1 to Q2 Base to Emitter Voltage Match
(Note 5)
VCE(SAT)
IC = 10mA, IB = 1mA
A
-
95
250
mV
VBE
IC = 10mA, VCE = 2V
A
-
780
1000
mV
∆VBE
IC = 10mA, VCE = 2V
A
-
1.2
6
mV
IC = 1mA, VCE = 2V
A
-
1.0
6
mV
IC = 0.1mA, VCE = 2V
A
-
0.7
6
mV
IC = 10mA
C
-
-1.5
-
mV/°C
IC = 10mA, VCE = 2V
A
48
80
200
IC = 1mA, VCE = 2V
A
48
87
200
IC = 0.1mA, VCE = 2V
A
48
90
200
IC = 10mA, VCE = 5V
A
48
96
200
IC = 1mA, VCE = 5V
A
48
96
200
IC = 0.1mA, VCE = 5V
A
48
100
200
1mA ≤ IC ≤ 10mA,
1V ≤ VCE ≤ 5V
A
-
2
8
%
IC = 1mA, ∆VCE = 3V
A
20
30
-
V
Base to Emitter Voltage Drift
DC Forward-Current Transfer Ratio
(Note 5)
Q1 to Q2 Current Transfer Ratio Match
Early Voltage
hFE
∆hFE
VA
2
FN4445.2
August 12, 2005
HFA3134, HFA3135
Electrical Specifications
TA = 25°C (Continued)
(NOTE 3)
TEST
LEVEL
MIN
TYP
MAX
UNITS
f = 1.0GHz, IC = 10mA,
1V ≤ VCE ≤ 5V, ZS = 50Ω
B
-
2.4
-
dB
f = 1.0GHz, IC = 1mA,
1V ≤ VCE ≤ 5V, ZS = 50Ω
B
-
2.6
-
dB
IC = 10mA, VCE = 5V
B
-
8.5
-
GHz
IC = 1mA, VCE = 5V
B
-
3
-
GHz
IC = 10mA, VCE = 5V
B
-
7.5
-
GHz
Base to Emitter Capacitance
VBE = -0.5V
B
-
600
-
fF
Collector to Base Capacitance
VCB = 3V
B
-
500
-
fF
(NOTE 3)
TEST
LEVEL
MIN
TYP
MAX
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
DYNAMIC CHARACTERISTICS FOR HFA3134 (NPN)
Noise Figure
NF
Current Gain-Bandwidth Product
(Note 5)
fT
Power Gain-Bandwidth Product
fMAX
Electrical Specifications
TA = 25°C
PARAMETER
SYMBOL
TEST CONDITIONS
DC CHARACTERISTICS FOR HFA3135 (PNP)
Collector to Base Breakdown Voltage
V(BR)CBO
IC = -10µA, IE = 0
A
12
21
-
V
Collector to Emitter Breakdown Voltage
V(BR)CEO
IC = -100µA, IB = 0
A
4
14
-
V
V(BR)CER
IC = -100µA, RB = 10kΩ
A
11
23
-
V
V(BR)EBO
IE = -10µA, IC = 0
B
-
5
-
V
Collector-Cutoff-Current
ICEO
VCE = -6V, IB = 0
A
-5
-
5
nA
Collector-Cutoff-Current
ICBO
VCB = -8V, IE = 0
A
-5
-
5
nA
Emitter-Cutoff-Current
IEBO
VEB = -1V, IC = 0
B
-
TBD
-
pA
B
-
1
-
nA
Emitter to Base Breakdown Voltage (Note 4)
Collector to Collector Leakage
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Q1 to Q2 Base to Emitter Voltage Match
DC Forward-Current Transfer Ratio
VCE(SAT)
IC = -10mA, IB = -1mA
A
-
150
250
mV
VBE
IC = -10mA, VCE = -2V
A
-
850
1000
mV
∆VBE
IC = -10mA, VCE = -2V
A
-
1
6
mV
IC = -1mA, VCE = -2V
A
-
1
6
mV
IC = -0.1mA, VCE = -2V
A
-
2
6
mV
IC = -10mA, VCE = -2V
A
15
40
125
IC = -1mA, VCE = -2V
A
15
47
125
IC = -0.1mA, VCE = -2V
A
15
52
125
IC = -10mA, VCE = -5V
A
15
47
125
IC = -1mA, VCE = -5V
A
15
53
125
IC = -0.1mA, VCE = -5V
A
15
57
125
-1mA ≤ IC ≤ -10mA,
-1V ≤ VCE ≤ -5V
A
-
1
8
%
IC = -1mA, ∆VCE = -3V
A
15
24
-
V
IC = -10mA
C
-
-1.4
-
mV/°C
hFE
∆hFE
Q1 to Q2 Current Gain Match
Early Voltage
VA
Base to Emitter Voltage Drift
3
FN4445.2
August 12, 2005
HFA3134, HFA3135
Electrical Specifications
TA = 25°C (Continued)
PARAMETER
(NOTE 3)
TEST
LEVEL
MIN
TYP
MAX
UNITS
f = 900MHz, IC = -10mA,
-1V ≤ VCE ≤ -5V, ZS = 50Ω
B
-
5.2
-
dB
f = 900MHz, IC = -1mA,
-1V ≤ VCE ≤ -5V, ZS = 50Ω
B
-
4.6
-
dB
SYMBOL
TEST CONDITIONS
DYNAMIC CHARACTERISTICS FOR HFA3135 (PNP)
Noise Figure
NF
Current Gain-Bandwidth Product
fT
IC = -10mA, VCE = -5V
B
-
7
-
GHz
Power Gain-Bandwidth Product
fMAX
IC = -10mA, VCE = -5V
B
-
TBD
-
GHz
Base to Emitter Capacitance
VBE = 0.5V
B
-
550
-
fF
Collector to Base Capacitance
VCB = -3V
B
-
400
-
fF
NOTES:
3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only.
4. Measuring VEBO can degrade the transistor hFE and hFE match.
5. See Typical Performance Curves for more information.
Typical Performance Curves
IB = 200µA
20
Q1
COLLECTOR CURRENT (mA)
18
Q2
IB = 160µA
16
Q1
14
Q2
IB = 120µA
12
Q1
10
Q2
8
IB = 80µA
Q1
6
Q2
IB = 40µA
Q1
4
Q2
2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
4
COLLECTOR CURRENT AND BASE CURRENT (A)
TA = 25°C, Unless Otherwise Specified
Q1
100m
Q2
10m
Q1
1m
Q2
100µ
IC
10µ
1µ
100n
IB
10n
1n
100p
10p
0.4
0.5
0.7
0.9
0.6
0.8
BASE TO EMITTER VOLTAGE (V)
1.0
FIGURE 2. NPN COLLECTOR AND BASE CURRENTS vs
BASE TO EMITTER VOLTAGE
FN4445.2
August 12, 2005
HFA3134, HFA3135
Typical Performance Curves
TA = 25°C, Unless Otherwise Specified (Continued)
130
10
120
Q2
Q1
DC CURRENT GAIN
100
90
80
VCE = 3V
Q2
70
VCE = 1V
60
VCE = 5V
9
VCE = 5V
GAIN BANDWIDTH (GHz)
110
Q1
50
VCE = 3V
8
7
6
5
4
VCE = 1V
3
2
40
1
30
20
1n
1n
100n
1µ
10µ
100µ
1m
10m
0.1
100m
1
10
100
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (A)
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT
FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs
COLLECTOR CURRENT
1n
EMITTER LEAKAGE CURRENT (A)
COLLECTOR = OPEN
100p
10p
1p
0.1p
0
-0.3
-0.6
-0.9
-1.2
-1.5
-1.8
-2.1
-2.4
-2.7
-3.0
BASE TO EMITTER VOLTAGE (V)
FIGURE 5. NPN EMITTER CUTOFF CURRENT vs BASE TO EMITTER VOLTAGE
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
5
FN4445.2
August 12, 2005
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