1N5221B SERIES_F1603.pdf

1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
0.5W Hermetically Sealed Glass Zener Diodes
FEATURES
- Zener voltage range 2.4 to 56 volts
- DO-35 package
- Through-hole device type mounting
- Hemetically sealed glass
- Compression bonded construction
- All extermal surfaces are corrosion
resistant and leads are readily solderable
DO-35
- ROHS complaint
- Solder hot dip Tin(Sn) lead finish
- Cathode indicated by polarity band
- Packing code with suffix "G" means
Halogen-free
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
Power dissipation
Forward Voltage @IF=200mA
Operating and Storage Temperature Range
Document Number: DS_S1410003
SYMBOL
PD
VF
VALUE
UNITS
500
mW
1.1
V
TJ , TSTG
100
°C
Version: F1603
1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
ORDERING INFORMATION
PART NO.
PART NO.
PACKING
PACKING CODE
SUFFIX (Note 2)
CODE
SUFFIX
1N52xxB
(Note 1)
R0
-xx
PACKAGE
10K / 14" Reel
DO-35
G
A0
PACKING
5K / Box (Ammo)
Note 1: "xx" defines voltage from 2.4V (1N5221B) to 56V (1N5263B)
Note 2: Part No. Suffix „-xx “ would be used for special requirement
EXAMPLE
PREFERRED
PART NO.
PART NO.
PART NO.
1N5221B R0G
1N5221B
1N5221B-L0 R0G
1N5221B
1N5221B-B0 R0G
1N5221B
SUFFIX
PACKING CODE
PACKING CODE
DESCRIPTION
SUFFIX
R0
G
Multiple manufacture
source
Halogen free
L0
R0
G
Define manufacture
source
Halogen free
B0
R0
G
Define manufacture
source
Halogen free
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
1.3
VZtn - Relative Voltage Change
RthJA - Therm. Resist. Junction Ambient
(K/W)
500
400
300
200
100
0
0
5
10
15
8 x 10-4/K
TKVZ = 10 x 101.1
6 x 10-
1.0
2 x 104/K
0
- 2 x 10-
0.9
- 4 x 10-
4 x 10-
0.8
-60
20
I - Lead Length (mm)
VZtn = VZt/VZ (25 °C)
1.2
0
60
120
180
240
Tj - Junction Temperature (°C)
Fig. 3 Typical Change of Working Voltage VS. Junction
Fig. 1 Thermal Resistance VS. Lead Length
600
1000
Ptot - Total Power Dissipation (mW)
VZ - Voltage Change (mV)
500
Tj = 25oC
100
IZ = 5 mA
10
400
300
200
100
0
1
0
5
10
15
20
25
VZ - Z-Voltage (V)
Fig. 2 Typical Change of Working Voltage under Operating
Conditions at Tamb = 25 oC
Document Number: DS_S1410003
0
40
80
120
160
200
Tamb - Ambient Temperature (°C)
Fig.4 Total Power Dissipation VS. Ambient Temperature
Version: F1603
1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
100
TKVZ - Temperature Coefficient of VZ
(10-4/K)
15
80
IZ - Z-Current (mA)
10
5
IZ = 5 mA
0
-5
0
10
20
30
40
Ptot = 500 mW
Tamb = 25 oC
60
40
20
0
50
0
2
4
VZ - Z-Voltage (V)
Fig. 5 Temperature Coefficient of Vz VS. Z-Voltage
8
10
Fig.8 Z-Current VS. Z-Voltage
50
200
40
150
IZ - Z-Current (mA)
CD - Diode Capacitance (pF)
6
VZ - Z-Voltage (V)
VR = 2 V
Tj = 25oC
100
50
Ptot = 500 mW
Tamb = 25 °C
30
20
10
0
0
0
5
10
15
20
15
25
20
25
30
35
VZ - Z-Voltage (V)
VZ - Z-Voltage (V)
Fig. 9 Z-Current VS. Z-Voltage
Fig.6 Diode Capacitance VS. Z-Voltage
1000
100
IZ = 1 mA
1
rZ - Differiential Z-Resistance (Ω)
IF - Forward Current (mA)
10
Tj = 25oC
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
VF - Forward Voltage (V)
Figure 7. Forward Current VS. Forward Voltage
Document Number: DS_S1410003
100
5 mA
10
Tj = 25oC
10 mA
1
0
5
10
15
20
25
VZ - Z-Voltage (V)
Fig.10 Differential Z-Resistance VS. Z-Voltage
Version: F1603
1N5221B - 1N5263B
Taiwan Semiconductor
Zthp –The rmal Resistance for Pulse Cond. (KW)
Small Signal Product
1000
tp/T = 0.5
100
tp/T = 0.2
Single Pulse
tp/T = 0.01
10
R thJA = 300 K/W
T = T jmax –Tamb
tp/T = 0.02
tp/T = 0.1
tp/T = 0.05
iZM = (–VZ +(VZ2+ 4rzj x T/Zthp) 1 / 2) /(2rzj )
1
0.1
1.0
10.0
100.0
1000.0
tp – Pulse Length (ms)
Fig. 11 Thermal Response
Document Number: DS_S1410003
Version: F1603
1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
Electrical Characteristics (Ratings at TA=25oC ambient temperature unless otherwise specified)
Device
Vz @ Izt
Current
ZZT @ IZT
ZZK
@IZK=0.25mA
IR @ VR
Voltage
IZT
Ω
Ω
μA
VR
Nominal
(mA)
Max.
Max.
Max.
(Volts)
1N5221B
2.4
20
30
1200
100
1.0
1N5222B
2.5
20
30
1250
100
1.0
1N5223B
2.7
20
30
1300
75
1.0
1N5224B
2.8
20
30
1400
75
1.0
1N5225B
3.0
20
29
1600
50.0
1.0
1N5226B
3.3
20
28
1600
25.0
1.0
1N5227B
3.6
20
24
1700
15.0
1.0
1N5228B
3.9
20
23
1900
10.0
1.0
1N5229B
4.3
20
22
2000
5.0
1.0
1N5230B
4.7
20
19
1900
5.0
2.0
1N5231B
5.1
20
17
1600
5.0
2.0
1N5232B
5.6
20
11
1600
5.0
3.0
1N5233B
6.0
20
7
1600
5.0
3.5
1N5234B
6.2
20
7
1000
5.0
4.0
1N5235B
6.8
20
5
750
3.0
1N5236B
7.5
20
6
500
3.0
5.0
6.0
1N5237B
8.2
20
8
500
3.0
6.5
1N5238B
8.7
20
8
600
3.0
6.5
1N5239B
9.1
20
10
600
3.0
7.0
1N5240B
10
20
17
600
2.0
8
1N5241B
11
20
22
600
1.0
8.4
1N5242B
12
20
30
600
0.5
9
1N5243B
13
9.5
13
600
0.1
10
1N5244B
14
9.0
15
600
0.1
10
1N5245B
15
8.5
16
600
0.1
11
1N5246B
16
7.8
17
600
0.1
12
1N5247B
17
7.4
19
600
0.1
13
1N5248B
18
7.0
21
600
0.1
14
1N5249B
19
6.6
23
600
0.1
14
1N5250B
20
6.2
25
600
0.1
15
1N5251B
22
5.6
29
600
0.1
17
1N5252B
24
5.2
33
600
0.1
18
1N5253B
25
5.0
35
600
0.1
18
1N5254B
27
4.6
41
600
0.1
21
1N5255B
28
4.5
44
600
0.1
21
1N5256B
30
4.2
49
600
0.1
23
Document Number: DS_S1410003
Version: F1603
1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
Vz @ Izt
Device
Current
ZZT @ IZT
ZZK
@IZK=0.25mA
IR @ VR
VR
Voltage
IZT
Ω
Ω
μA
Nominal
(mA)
Max.
Max.
Max.
(Volts)
1N5257B
33
3.8
58
700
0.1
25
1N5258B
36
3.4
70
700
0.1
27
1N5259B
39
3.2
80
800
0.1
30
1N5260B
43
3.0
93
900
0.1
33
1N5261B
47
2.7
105
1000
0.1
36
1N5262B
51
2.5
125
1100
0.1
39
1N5263B
56
2.2
150
1300
0.1
43
Notes: 1. Nominal zener voltages between the voltages shown and tighter voltage, for detalied information on
price, availability and delivery.
2. The zener voltage(VZ) is tested under pulse condition. The measured VZ is guaranteed to be within
specification with device junction in thermal equilibrium.
3. Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having
an RMS value equal to 10% of the dc zener current (IZT) is superimposed to IZT.
4. Zener voltage has a standard tolerance on the nominal zener voltage of ±5%.
Document Number: DS_S1410003
Version: F1603
1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
PACKAGE OUTLINE DIMENSIONS
DO-35
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
0.34
0.60
0.013
0.024
B
2.90
5.08
0.114
0.200
C
25.40
38.10
1.000
1.500
D
1.30
2.28
0.051
0.090
MARKING DIAGRAM
1N
52
XX
B
Document Number: DS_S1410003
Version: F1603
1N5221B - 1N5263B
Taiwan Semiconductor
Small Signal Product
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1410003
Version: F1603
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