BZT52B2V4S series_D1603.pdf

BZT52B2V4S - BZT52B75S
Taiwan Semiconductor
Small Signal Product
200mW, 2% Tolerance SMD Zener Diode
FEATURES
- Wide zener voltage range selection : 2.4V to 75V
- Surface Mount Device Type
- Moisture sensitivity level 1
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
- VZ Tolerance Selection of ±2%
SOD-323F
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
MECHANICAL DATA
- Case: Flat lead SOD-323F small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight : 4.02 ± 0.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
Forward Voltage
@ IF = 10mA
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature Range
(Note 1)
SYMBOL
VALUE
UNIT
VF
PD
1
V
200
mW
RθJA
625
TJ, TSTG
-65 to +150
o
C/W
o
C
Notes: Valid provided that electrodes are kept at ambient temperature.
Zener I vs. V Characteristics
VBR
: Voltage at IZK
IZK
: Test current for voltage VBR
ZZK
: Dynamic impedance at IZK
IZT
: Test current for voltage VZ
VZ
: Voltage at current IZT
ZZT
: Dynamic impedance at IZT
IZM
: Maximum steady state current
: Voltage at IZM
VZM
Version: D1603
BZT52B2V4S - BZT52B75S
Taiwan Semiconductor
Small Signal Product
Electrical Characteristics
(Ratings at TA=25oC ambient temperature unless otherwise specified)
VF Forward Voltage = 1V Maximum @ IF = 10 mA for all part numbers
Device
VZ
@ IZT
(Volt)
IZT
ZZT @ IZT
VR
Max
(V)
564
45
1
564
18
1
1
564
9
1
95
1
564
4.5
1
90
1
564
4.5
1
5
90
1
564
2.7
1
4.39
5
90
1
564
2.7
1
4.79
5
80
1
470
2.7
2.0
5.10
5.20
5
60
1
451
1.8
2.0
5.49
5.60
5.71
5
40
1
376
0.9
2.0
6.08
6.20
6.32
5
10
1
141
2.7
4.0
BZ
6.66
6.80
6.94
5
15
1
75
1.8
4.0
BZT52B7V5S
CZ
7.35
7.50
7.65
5
15
1
75
0.9
5.0
BZT52B8V2S
DZ
8.04
8.20
8.36
5
15
1
75
0.63
5.0
BZT52B9V1S
EZ
8.92
9.10
9.28
5
15
1
94
0.45
6.0
BZT52B10S
FZ
9.80
10.00
10.20
5
20
1
141
0.18
7.0
BZT52B11S
GZ
10.78
11.00
11.22
5
20
1
141
0.09
8.0
BZT52B12S
HZ
11.76
12.00
12.24
5
25
1
141
0.09
8.0
BZT52B13S
JZ
12.74
13.00
13.26
5
30
1
160
0.09
8.0
BZT52B15S
KZ
14.70
15.00
15.30
5
30
1
188
0.045
10.5
BZT52B16S
LZ
15.68
16.00
16.32
5
40
1
188
0.045
11.2
BZT52B18S
MZ
17.64
18.00
18.36
5
45
1
212
0.045
12.6
BZT52B20S
NZ
19.60
20.00
20.40
5
55
1
212
0.045
14.0
BZT52B22S
PZ
21.56
22.00
22.44
5
55
1
235
0.045
15.4
BZT52B24S
RZ
23.52
24.00
24.48
5
70
1
235
0.045
16.8
BZT52B27S
SZ
26.46
27.00
27.54
2
80
0.5
282
0.045
18.9
BZT52B30S
TZ
29.40
30.00
30.60
2
80
0.5
282
0.045
21.0
BZT52B33S
UZ
32.34
33.00
33.66
2
80
0.5
306
0.045
23.0
BZT52B36S
VZ
35.28
36.00
36.72
2
90
0.5
329
0.045
25.2
BZT52B39S
WZ
38.22
39.00
39.78
2
130
0.5
329
0.045
27.3
BZT52B43S
XZ
42.14
43.00
43.86
2
150
0.5
353
0.045
30.1
BZT52B47S
YZ
46.06
47.00
47.94
2
170
0.5
353
0.045
33.0
BZT52B51S
-Z
49.98
51.00
52.02
2
180
0.5
376
0.045
35.7
BZT52B56S
=Z
54.88
56.00
57.12
2
200
0.5
400
0.045
39.2
BZT52B62S
≡Z
60.76
62.00
63.24
2
215
0.5
423
0.045
43.4
BZT52B68S
>Z
66.64
68.00
69.36
2
240
0.5
447
0.045
47.6
BZT52B75S
<Z
73.50
75.00
76.50
2
255
0.5
470
0.045
52.5
(Ω)
IZK
ZZK @ IZK
IR @ VR(uA)
Part Number
Marking
Min
Nom
Max
(mA)
BZT52B2V4S
0Z
2.35
2.40
2.45
5
100
1
BZT52B2V7S
1Z
2.65
2.70
2.75
5
100
1
BZT52B3V0S
2Z
2.94
3.00
3.06
5
100
BZT52B3V3S
3Z
3.23
3.30
3.37
5
BZT52B3V6S
4Z
3.53
3.60
3.67
5
BZT52B3V9S
5Z
3.82
3.90
3.98
BZT52B4V3S
6Z
4.21
4.30
BZT52B4V7S
7Z
4.61
4.70
BZT52B5V1S
8Z
5.00
BZT52B5V6S
9Z
BZT52B6V2S
AZ
BZT52B6V8S
Max
(mA)
(Ω)
Max
Notes: 1. The Zener Voltage (VZ) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an
RMS value equal to 10% of the dc zener current(IZT or IZK) is superimposed to IZT or IZK.
Version: D1603
BZT52B2V4S - BZT52B75S
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
Fig. 2 Zener Breakdown Characteristics
Fig. 1 Typical Forward Characteristics
100
1000
TA=25oC
10
Zener Current (mA)
Forward Current (mA)
TA=25oC
100
10
1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1
0.1
0.01
1.2
0
1
2
3
4
5
6
7
8
9
10
Forward Voltage (V)
Zener Voltage (V)
Fig. 3 Zener Breakdown Characteristics
Fig. 4 Admissible Power Dissipation Curve
11
12
Fig. 3
line 1
700
100
Power Dissipation (mW)
Zener Current (mA)
600
10
1
0.1
line 2
500
400
line 3
300
200
line 4
100
line 5
0
0.01
15
25
35
45
55
65
75
0
85
50
100
150
200
line 6
Ambient Temperature ( oC)
Zener Voltage (V)
Fig. 6 Effect of Zener Voltage on Impedence
Fig. 5 Typical Capacitance
1000
Dynamic Impedence(Ohm)
Capacitance (pF)
1000
Fig. 4
100
1V Bias
10
1
100
IZ=1mA
line 2
IZ=120mA
10
Fig. 6
line 1
1
Bias at 50% of VZ (Nom)
1
Fig.5
line 1
IZ=5mA
10
Zener Voltage (V)
100
1
10
100
Zener Voltage (V)
Version:D1603
BZT52B2V4S - BZT52B75S
Taiwan Semiconductor
Small Signal Product
ORDERING INFORMATION
PART NO.
MANUFACTURE
CODE (Note1)
BZT52BxxxS
(Note2)
PACKING CODE
RR
GREEN COMPOUND
CODE
G
PACKAGE
PACKING
SOD-323F
3K / 7" Reel
Note1: Manufacture special control, if empty means no special control requirement.
Note2: "xxx" is Device Code from "2V4" thru "75", detail could follow the previous page
EXAMPLE
PREFERRED P/N
PART NO.
BZT52B2V4S RRG
BZT52B2V4S
BZT52B2V4S-L0 RRG
BZT52B2V4S
MANUFACTURE
CODE
L0
PACKING CODE
GREEN COMPOUND
CODE
DESCRIPTION
RR
G
Green compound
RR
G
Green compound
Version: D1603
BZT52B2V4S - BZT52B75S
Taiwan Semiconductor
Small Signal Product
DIMENSIONS
SOD-323F
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
1.15
1.35
0.045
0.053
B
2.30
2.80
0.091
0.110
C
0.25
0.40
0.010
0.016
D
1.60
1.80
0.063
0.071
E
0.80
1.10
0.031
0.043
F
0.05
0.25
0.002
0.010
SUGGESTED PAD LAYOUT
DIM.
Unit(mm)
Unit(inch)
Typ.
Typ.
A
0.630
0.025
B
0.830
0.033
C
1.600
0.063
D
2.860
0.113
Version: D1603
BZT52B2V4S - BZT52B75S
Taiwan Semiconductor
Small Signal Product
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no
responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property
rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability
whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties
relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling
these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such
improper use or sale.
Version: D1603
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