BZT52B2V4S - BZT52B75S Taiwan Semiconductor Small Signal Product 200mW, 2% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 75V - Surface Mount Device Type - Moisture sensitivity level 1 - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code - VZ Tolerance Selection of ±2% SOD-323F - Matte Tin(Sn) lead finish with Nickel(Ni) underplate MECHANICAL DATA - Case: Flat lead SOD-323F small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Polarity: Indicated by cathode band - Weight : 4.02 ± 0.5mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER Forward Voltage @ IF = 10mA Power Dissipation Thermal Resistance from Junction to Ambient Junction and Storage Temperature Range (Note 1) SYMBOL VALUE UNIT VF PD 1 V 200 mW RθJA 625 TJ, TSTG -65 to +150 o C/W o C Notes: Valid provided that electrodes are kept at ambient temperature. Zener I vs. V Characteristics VBR : Voltage at IZK IZK : Test current for voltage VBR ZZK : Dynamic impedance at IZK IZT : Test current for voltage VZ VZ : Voltage at current IZT ZZT : Dynamic impedance at IZT IZM : Maximum steady state current : Voltage at IZM VZM Version: D1603 BZT52B2V4S - BZT52B75S Taiwan Semiconductor Small Signal Product Electrical Characteristics (Ratings at TA=25oC ambient temperature unless otherwise specified) VF Forward Voltage = 1V Maximum @ IF = 10 mA for all part numbers Device VZ @ IZT (Volt) IZT ZZT @ IZT VR Max (V) 564 45 1 564 18 1 1 564 9 1 95 1 564 4.5 1 90 1 564 4.5 1 5 90 1 564 2.7 1 4.39 5 90 1 564 2.7 1 4.79 5 80 1 470 2.7 2.0 5.10 5.20 5 60 1 451 1.8 2.0 5.49 5.60 5.71 5 40 1 376 0.9 2.0 6.08 6.20 6.32 5 10 1 141 2.7 4.0 BZ 6.66 6.80 6.94 5 15 1 75 1.8 4.0 BZT52B7V5S CZ 7.35 7.50 7.65 5 15 1 75 0.9 5.0 BZT52B8V2S DZ 8.04 8.20 8.36 5 15 1 75 0.63 5.0 BZT52B9V1S EZ 8.92 9.10 9.28 5 15 1 94 0.45 6.0 BZT52B10S FZ 9.80 10.00 10.20 5 20 1 141 0.18 7.0 BZT52B11S GZ 10.78 11.00 11.22 5 20 1 141 0.09 8.0 BZT52B12S HZ 11.76 12.00 12.24 5 25 1 141 0.09 8.0 BZT52B13S JZ 12.74 13.00 13.26 5 30 1 160 0.09 8.0 BZT52B15S KZ 14.70 15.00 15.30 5 30 1 188 0.045 10.5 BZT52B16S LZ 15.68 16.00 16.32 5 40 1 188 0.045 11.2 BZT52B18S MZ 17.64 18.00 18.36 5 45 1 212 0.045 12.6 BZT52B20S NZ 19.60 20.00 20.40 5 55 1 212 0.045 14.0 BZT52B22S PZ 21.56 22.00 22.44 5 55 1 235 0.045 15.4 BZT52B24S RZ 23.52 24.00 24.48 5 70 1 235 0.045 16.8 BZT52B27S SZ 26.46 27.00 27.54 2 80 0.5 282 0.045 18.9 BZT52B30S TZ 29.40 30.00 30.60 2 80 0.5 282 0.045 21.0 BZT52B33S UZ 32.34 33.00 33.66 2 80 0.5 306 0.045 23.0 BZT52B36S VZ 35.28 36.00 36.72 2 90 0.5 329 0.045 25.2 BZT52B39S WZ 38.22 39.00 39.78 2 130 0.5 329 0.045 27.3 BZT52B43S XZ 42.14 43.00 43.86 2 150 0.5 353 0.045 30.1 BZT52B47S YZ 46.06 47.00 47.94 2 170 0.5 353 0.045 33.0 BZT52B51S －Z 49.98 51.00 52.02 2 180 0.5 376 0.045 35.7 BZT52B56S ＝Z 54.88 56.00 57.12 2 200 0.5 400 0.045 39.2 BZT52B62S ≡Z 60.76 62.00 63.24 2 215 0.5 423 0.045 43.4 BZT52B68S ＞Z 66.64 68.00 69.36 2 240 0.5 447 0.045 47.6 BZT52B75S ＜Z 73.50 75.00 76.50 2 255 0.5 470 0.045 52.5 (Ω) IZK ZZK @ IZK IR @ VR(uA) Part Number Marking Min Nom Max (mA) BZT52B2V4S 0Z 2.35 2.40 2.45 5 100 1 BZT52B2V7S 1Z 2.65 2.70 2.75 5 100 1 BZT52B3V0S 2Z 2.94 3.00 3.06 5 100 BZT52B3V3S 3Z 3.23 3.30 3.37 5 BZT52B3V6S 4Z 3.53 3.60 3.67 5 BZT52B3V9S 5Z 3.82 3.90 3.98 BZT52B4V3S 6Z 4.21 4.30 BZT52B4V7S 7Z 4.61 4.70 BZT52B5V1S 8Z 5.00 BZT52B5V6S 9Z BZT52B6V2S AZ BZT52B6V8S Max (mA) (Ω) Max Notes: 1. The Zener Voltage (VZ) is tested under pulse condition of 10ms. 2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2%. 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative. 4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current(IZT or IZK) is superimposed to IZT or IZK. Version: D1603 BZT52B2V4S - BZT52B75S Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) Fig. 2 Zener Breakdown Characteristics Fig. 1 Typical Forward Characteristics 100 1000 TA=25oC 10 Zener Current (mA) Forward Current (mA) TA=25oC 100 10 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1 0.1 0.01 1.2 0 1 2 3 4 5 6 7 8 9 10 Forward Voltage (V) Zener Voltage (V) Fig. 3 Zener Breakdown Characteristics Fig. 4 Admissible Power Dissipation Curve 11 12 Fig. 3 line 1 700 100 Power Dissipation (mW) Zener Current (mA) 600 10 1 0.1 line 2 500 400 line 3 300 200 line 4 100 line 5 0 0.01 15 25 35 45 55 65 75 0 85 50 100 150 200 line 6 Ambient Temperature ( oC) Zener Voltage (V) Fig. 6 Effect of Zener Voltage on Impedence Fig. 5 Typical Capacitance 1000 Dynamic Impedence(Ohm) Capacitance (pF) 1000 Fig. 4 100 1V Bias 10 1 100 IZ=1mA line 2 IZ=120mA 10 Fig. 6 line 1 1 Bias at 50% of VZ (Nom) 1 Fig.5 line 1 IZ=5mA 10 Zener Voltage (V) 100 1 10 100 Zener Voltage (V) Version:D1603 BZT52B2V4S - BZT52B75S Taiwan Semiconductor Small Signal Product ORDERING INFORMATION PART NO. MANUFACTURE CODE (Note1) BZT52BxxxS (Note2) PACKING CODE RR GREEN COMPOUND CODE G PACKAGE PACKING SOD-323F 3K / 7" Reel Note1: Manufacture special control, if empty means no special control requirement. Note2: "xxx" is Device Code from "2V4" thru "75", detail could follow the previous page EXAMPLE PREFERRED P/N PART NO. BZT52B2V4S RRG BZT52B2V4S BZT52B2V4S-L0 RRG BZT52B2V4S MANUFACTURE CODE L0 PACKING CODE GREEN COMPOUND CODE DESCRIPTION RR G Green compound RR G Green compound Version: D1603 BZT52B2V4S - BZT52B75S Taiwan Semiconductor Small Signal Product DIMENSIONS SOD-323F DIM. Unit (mm) Unit (inch) Min Max Min Max A 1.15 1.35 0.045 0.053 B 2.30 2.80 0.091 0.110 C 0.25 0.40 0.010 0.016 D 1.60 1.80 0.063 0.071 E 0.80 1.10 0.031 0.043 F 0.05 0.25 0.002 0.010 SUGGESTED PAD LAYOUT DIM. Unit(mm) Unit(inch) Typ. Typ. A 0.630 0.025 B 0.830 0.033 C 1.600 0.063 D 2.860 0.113 Version: D1603 BZT52B2V4S - BZT52B75S Taiwan Semiconductor Small Signal Product Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Version: D1603