BZV55B2V4 Series_E14.pdf

BZV55B2V4 ~ BZV55B75
Taiwan Semiconductor
Small Signal Product
500mW, 2% Tolerance Zener Diode
FEATURES
- Wide zener voltage range selection : 2.4V to 75V
- VZ Tolerance Selection of ±2%
- Hermetically sealed glasss
- Pb free and RoHS compliant
- High reliability glass passivation insuring parameter
stability and protection against junction contamination
Mini-MELF (LL34)
Hermetically Sealed Glass
MECHANICAL DATA
- Case: Mini-MELF Package (JEDEC DO-213AC)
- High temperature soldering guaranteed: 270oC/10s
- Polarity: Indicated by cathode band
- Weight : 31 mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
Thermal Resistance (Junction to Ambient)
IF = 100 mA
Storage Temperature Range
(Note 1)
SYMBOL
VALUE
UNIT
PD
VF
500
1
mW
V
RθJA
300
TJ, TSTG
- 65 to + 175
o
C/W
o
C
Note1 : Valid provided that electrodes are kept at ambient temperature
Zener I vs. V Characteristics
VBR
: Voltage at IZK
IZK
: Test current for voltage VBR
ZZK
: Dynamic impedance at IZK
IZT
: Test current for voltage VZ
VZ
: Voltage at current I
ZZT
: Dynamic impedance at IZT
IZM
: Maximum steady state current
: Voltage at IZM
VZM
Document Number: DS_S1403001
Version: E14
BZV55B2V4 ~ BZV55B75
Taiwan Semiconductor
Small Signal Product
Electrical Characteristics (Ratings at TA=25oC ambient temperature unless otherwise specified)
VF Forward Voltage = 1.0V Maximum @ IF = 100 mA for all part numbers
Min
Nom
Max
IZT
(mA)
BZV55B2V4
2.35
2.4
2.45
5
ZZT @ IZT
(Ω)
Max
85
BZV55B2V7
2.65
2.7
2.75
5
85
1.0
600
10
1.0
BZV55B3V0
2.94
3.0
3.06
5
85
1.0
600
4
1.0
BZV55B3V3
3.23
3.3
3.37
5
85
1.0
600
2
1.0
BZV55B3V6
3.53
3.6
3.67
5
85
1.0
600
2
1.0
BZV55B3V9
3.82
3.9
3.98
5
85
1.0
600
2
1.0
BZV55B4V3
4.21
4.3
4.39
5
75
1.0
600
1
1.0
BZV55B4V7
4.61
4.7
4.79
5
60
1.0
600
0.5
1.0
BZV55B5V1
5.00
5.1
5.20
5
35
1.0
550
0.1
1.0
BZV55B5V6
5.49
5.6
5.71
5
25
1.0
450
0.1
1.0
BZV55B6V2
6.08
6.2
6.32
5
10
1.0
200
0.1
2.0
BZV55B6V8
6.66
6.8
6.94
5
8
1.0
150
0.1
3.0
BZV55B7V5
7.35
7.5
7.65
5
7
1.0
50
0.1
5.0
BZV55B8V2
8.04
8.2
8.36
5
7
1.0
50
0.1
6.2
BZV55B9V1
8.92
9.1
9.28
5
10
1.0
50
0.1
6.8
BZV55B10
9.80
10
10.20
5
15
1.0
70
0.1
7.5
BZV55B11
10.78
11
11.22
5
20
1.0
70
0.1
8.2
BZV55B12
11.76
12
12.24
5
20
1.0
90
0.1
9.1
BZV55B13
12.74
13
13.26
5
26
1.0
110
0.1
10
BZV55B15
14.70
15
15.30
5
30
1.0
110
0.1
11
BZV55B16
15.68
16
16.32
5
40
1.0
170
0.1
12
BZV55B18
17.64
18
18.36
5
50
1.0
170
0.1
13
BZV55B20
19.60
20
20.40
5
55
1.0
220
0.1
15
BZV55B22
21.56
22
22.44
5
55
1.0
220
0.1
16
BZV55B24
23.52
24
24.48
5
80
1.0
220
0.1
18
BZV55B27
26.46
27
27.54
5
80
1.0
220
0.1
20
BZV55B30
29.40
30
30.60
5
80
1.0
220
0.1
22
BZV55B33
32.34
33
33.66
5
80
1.0
220
0.1
24
BZV55B36
35.28
36
36.72
5
80
1.0
220
0.1
27
BZV55B39
38.22
39
39.78
2.5
90
0.5
500
0.1
28
BZV55B43
42.14
43
43.86
2.5
90
0.5
600
0.1
32
BZV55B47
46.06
47
47.94
2.5
110
0.5
700
0.1
35
BZV55B51
49.98
51
52.02
2.5
125
0.5
700
0.1
38
BZV55B56
54.88
56
57.12
2.5
135
0.5
1000
0.1
42
BZV55B62
60.76
62
63.24
2.5
150
0.5
1000
0.1
47
BZV55B68
66.64
68
69.36
2.5
160
0.5
1000
0.1
51
BZV55B75
73.50
75
76.50
2.5
170
0.5
1000
0.1
56
VZ @ IZT
(Volt)
Part Number
1.0
ZZK @ IZK
(Ω)
Max
600
IR @ VR
(μA)
Max
50
1.0
IZK
(mA)
VR
(V)
Notes: 1. The Zener Voltage (VZ) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2%
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an
RMS value equal to 10% of the dc zener current (IZT or IZK) is superimposed to IZT or IZK.
Document Number: DS_S1403001
Version: E14
BZV55B2V4 ~ BZV55B75
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES (BZV55B2V4 ~ BZV55B75)
(TA=25℃ unless otherwise noted)
Fig. 2 Total Capacitance
Fig. 1 Power Dissipation VS. Ambient Temperature
1000
600
f=1MHz
TA=25oC
Total Capacitance (pF)
PD-Power DIssipation (mW)
500
400
300
200
100
VR=2V
VR=5V
10
100
VR=20V
0
0
40
80
120
160
200
0
20
40
Temperature (oC)
60
80
VZ - Reverse Voltage (V)
Fig. 4 Forward Current VS. Forward Voltage
Fig. 3 Differential Impedance VS. Zener Voltage
1000
1000
Differential Zener Impedance(Ohm)
VR=25V
1
TA=25oC
Forward Current (mA)
100
IZ=2mA
IZ=5mA
10
IZ=10mA
1
100
10
1
0.1
0
1
10
0.0
100
0.2
VZ - Reverse Voltage (V)
0.4
0.6
0.8
1.0
1.2
VF - Forward Voltage (mV)
Fig. 6 Reverse Current VS. Reverse Voltage
Fig. 5 Reverse Current VS. Reverse Voltage
100
300
Reverse Current (mA)
Reverse Current (mA)
250
200
150
100
10
1
0.1
50
0
0.01
0
2
4
6
VZ - Reverse Voltage (V)
Document Number: DS_S1403001
8
10
15
25
35
45
55
65
75
85
VZ - Reverse Voltage (V)
Version: E14
BZV55B2V4 ~ BZV55B75
Taiwan Semiconductor
Small Signal Product
ORDERING INFORMATION
PART NO.
MANUFACTURE
CODE
BZV55Bxxx
(Note1)
PACKING CODE
(Note 2)
GREEN COMPOUND
PACKAGE
PACKING
L0
CODE
G
Mini-MELF (Glass Seal)
10K / 13" Reel
L1
G
Mini-MELF (Glass Seal)
2.5K / 7" Reel
Note 1 : "xxx" is Device Code from "2V4" thru "75".
Note 2 : Manufacture special control, if empty means no special control requirement.
EXAMPLE
PREFERRED P/N
PART NO.
BZV55B2V4 L0G
BZV55B2V4
BZV55B2V4-L0 L0G
BZV55B2V4
BZV55B2V4-B0 L0G
BZV55B2V4
MANUFACTURE
Document Number: DS_S1403001
CODE
PACKING CODE
GREEN COMPOUND
CODE
DESCRIPTION
L0
G
Green compound
L0
L0
G
Green compound
B0
L0
G
Green compound
Version: E14
BZV55B2V4 ~ BZV55B75
Taiwan Semiconductor
Small Signal Product
PACKAGE OUTLINE DIMENSIONS
C
DIM.
B
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
3.30
3.70
0.130
0.146
B
1.40
1.60
0.055
0.063
C
0.20
0.50
0.008
0.020
A
SUGGESTED PAD LATOUT
DIM.
Document Number: DS_S1403001
Unit(mm)
Unit(inch)
Typ.
Typ.
A
1.25
0.049
B
2.00
0.079
C
2.50
0.098
D
5.00
0.197
Version: E14
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