MMBT3904 Taiwan Semiconductor Small Signal Product 300mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) SOT-23 MECHANICAL DATA - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260oC/10s - Weight: 0.008g (approximately) - Marking Code: 1AM MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE UNIT PD 300 mW Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V IC 200 mA TJ , TSTG -55 to +150 Power Dissipation Collector Current Junction and Storage Temperature Range o C Notes:1. Valid provided that electrodes are kept at ambient temperature PARAMETER SYMBOL MIN MAX UNIT Collector-Base Breakdown Voltage IC = 10 μA IE = 0 V(BR)CBO 60 - V Collector-Emitter Breakdown Voltage IC = 1 mA IB = 0 V(BR)CEO 40 - V Emitter-Base Breakdown Voltage IE = 10 μA IC = 0 V(BR)EBO 6 - V Collector Cut-off Current VCB = 60 V IE = 0 ICBO - 0.1 μA Collector Cut-off Current VCE = 30 V VBE(OFF) = 3 V ICEO - 50 nA Emitter Cut-off Current VEB = 5 V IC = 0 IEBO - 0.1 μA 100 400 60 - 30 - - 0.3 V DC Current Gain Collector-Emitter Saturation Voltage VCE = 1 V IC = 10 mA VCE = 1 V IC = 50 mA VCE = 1 V IC = 100 mA IC = 50 mA IB = 5 mA VCE(sat) hFE IC = 50 mA IB = 5 mA VBE(sat) - 0.95 V Transition frequency VCE = 20 V IC = 10 mA f= 100MHz fT 250 - MHz Delay time VCC = 3 V VBE = 0.5 V IC = 10 mA td - 35 ns IB1 = 1.0 mA tr - 35 ns IC = 10 mA ts - 200 ns tf - 50 ns Base-Emitter Saturation Voltage Rise time Storage time VCC = 3 V Fall time IB1 = IB2 = 1.0 mA Document Number: DS_S1412034 Version: D14 MMBT3904 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) Fig.1 Typical Pulsed Current Gain VS. Collector Current Fig. 2 Collector-Emitter Saturation Voltage VS. Collector Current 0.20 VCE = 5V 125 °C 400 300 V CESAT- Collector-Emitter Voltage (V) hFE - Typical Pulsed Current Gain 500 25 °C 200 100 - 40 °C 0 0.1 1.0 10.0 100.0 β = 10 0.15 125 °C 0.10 25 °C 0.05 - 40 °C 0.00 0 1 IC - Collector Current (mA) 100 IC - Collector Current (mA) Fig. 3 Base-Emitter Saturation Voltage VS. Collector Current Fig. 4 Base-Emitter On Voltage VS. Collector Current 1.1 1 1 V BE(ON) - Base-Emitter On Voltage (V) VBESAT - Base-Emitter Voltage (V) 10 β = 10 0.9 0.8 0.7 - 40 °C 0.6 25 °C 0.5 0.4 125 °C 0.3 0.1 1 10 100 VCE= 5V 0.8 - 40 °C 25 °C 0.6 0.4 125 °C 0.2 0.1 IC - Collector Current (mA) 1 10 100 IC - Collector Current (mA) Fig. 5 Collector-Cutoff Current VS. Ambient Temperature Fig. 6 Capacitance VS. Reverse Bias Voltage 1000 10 f = 1.0 MHz VCB= 30V Capacitance (pF) ICBO-Collector Current (nA) 100 10 1 C ibo Cobo 0.1 0.01 25 50 75 100 125 TA - Ambient Temperature (OC) Document Number: DS_S1412034 150 1 0.1 1 10 100 Reverse Bias Voltage (V) Version: D14 MMBT3904 Taiwan Semiconductor Small Signal Product ORDERING INFORMATION PART NO. PART NO. PACKING PACKING CODE SUFFIX (Note 1) CODE SUFFIX MMBT3904 -xx RF G R5 PACKAGE PACKING 3K / 7" Reel SOT-23 10K / 13" Reel Note 1: Part No. Suffix „-xx “ would be used for special requirement EXAMPLE PREFERRED P/N PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE DESCRIPTION SUFFIX Multiple manufacture source MMBT3904 RF MMBT3904 RF MMBT3904 RFG MMBT3904 RF G Multiple manufacture source Green compound RF G Defined manufacture source Green compound G Defined manufacture source Green compound MMBT3904-D0 RFG MMBT3904 MMBT3904-B0 RFG MMBT3904 -D0 -B0 RF PACKAGE OUTLINE DIMENSIONS DIM. Unit(mm) Unit(inch) Min Max Min Max A 2.70 3.10 0.106 0.122 B 1.10 1.50 0.043 0.059 C 0.30 0.51 0.012 0.020 D 1.78 2.04 0.070 0.080 E 2.10 2.64 0.083 0.104 F 0.89 1.30 0.035 0.051 G 0.55 REF 0.022 REF H 0.10 REF 0.004 REF Unit (mm) Unit (inch) TYP TYP Z 2.8 0.11 X 0.7 0.03 Y 0.9 0.04 C 1.9 0.07 E 1.0 0.04 SUGGEST PAD LAYOUT DIM Document Number: DS_S1412034 Version: D14 MMBT3904 Taiwan Semiconductor Small Signal Product Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_S1412034 Version: D14