TSC1203E High Voltage NPN Transistor TO-263 2 (D PAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 1050V BVCEO 550V IC 5A VCE(SAT) ● ● Ordering Information High Voltage Capability High switching speed Part No. TSC1203ECM RNG Package Packing d Features 0.5V @ IC=1A, IB=200mA TO-263 800pcs / 13” Reel Absolute Maximum Rating (TA=25oC unless otherwise noted) Symbol Limit en Parameter de Note: “G” denote for Halogen Free Product Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCBO VCEO VEBO mm DC Pulse(Tp<5ms) DC Pulse(Tp<5ms) o TC=25 C 1050 550 9 5 8 2 4 36 +150 - 55 to +150 Collector Current Base Current e co Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range IC IB PD TJ TSTG Unit V V V A A W C o C o Electrical Specifications (TA=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit IC =1mA, IB =0 BVCBO 1050 -- -- V Collector-Emitter Breakdown Voltage IC = 5mA, IE =0 BVCEO 550 -- -- V Emitter-Base Breakdown Voltage IE =10mA, IC =0 BVEBO 9 -- -- V Collector Cutoff Current VCE =1050V, VBE =0 ICES -- -- 100 uA Collector Cutoff Current VCE =550V, IB =0 ICEO -- -- 100 uA Emitter Cutoff Current VEB =9V, IC =0 IEBO -- -- 10 uA IC=1A, IB=200mA VCE(SAT)1 -- 0.12 0.5 IC=2A, IB=400mA VCE(SAT)2 -- 0.18 0.7 IC=3A, IB=1A VCE(SAT)3 -- 0.22 1.5 IC=2A, IB=400mA VBE(SAT)1 -- 0.87 1.5 IC=3A, IB=1A VBE(SAT)2 -- 0.95 1.5 VCE =5V, IC =1mA hFE 1 10 -- -- VCE =5V, IC =10mA hFE 2 10 -- -- VCE =5V, IC =2A hFE 3 9 -- 28 VCE =3V, IC =800mA hFE 4 14 -- 32 No tR Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Transfer Ratio V V Resistive Load Switching Time (Ratings) Turn-on Time VCC = 150V, IC = 2A, ton -- -- 0.5 uS Storage Time IB1= 0.4A, IB2= -0.8A, tS -- 2.5 3.5 uS Fall Time tp = 30uS tf -- 0.2 0.3 uS 1/4 Version: A12 TSC1203E High Voltage NPN Transistor Electrical Characteristics Curve (TA=25oC, unless otherwise noted) Figure 2. DC Current Gain mm en de d Figure 1. Static Characteristics Figure 4. VBE(SAT) vs. Collector Current No tR e co Figure 3. VCE(SAT) vs. Collector Current Figure 5. Safety Operating Area Figure 6. Reverse Bias SOA 2/4 Version: A12 TSC1203E High Voltage NPN Transistor Land Pattern Recommendation mm en de d TO-263 Mechanical Drawing Unit: Millimeters Marking Diagram No tR e co Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr V =Aug S =May T =Jun U =Jul W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) 3/4 Version: A12 TSC1203E No tR e co mm en de d High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A12