TSC136_D15.pdf

TSC136
High Voltage NPN Transistor
TO-220
PRODUCT SUMMARY
Pin Definition:
1. Base
2. Collector
3. Emitter
BVCEO
400V
BVCBO
700V
IC
VCE(SAT)
3A
2V @ IC / IB = 2A / 0.5A
Block Diagram
Features
●
High Voltage
●
High Speed Switching
Structure
●
Silicon Triple Diffused Type
●
NPN Silicon Transistor
Ordering Information
Part No.
Package
Packing
TSC136CZ C0G
TO-220
50pcs / Tube
Note: “G” denotes for Halogen Free
Absolute Maximum Rating (Ta = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
VCBO
VCEO
VEBO
700
400
9
V
V
V
Total Dissipation @ Tc ≤ 25°C
Ptot
60
W
Collector Peak Current (tp <5ms)
ICM
6
A
Collector Current
IC
3
A
Base Peak Current (tp <5ms)
IBM
3
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
IB
1.5
A
Maximum Operating Junction Temperature
TJ
+150
°C
TSTG
-65 to +150
°C
Symbol
Limit
Unit
RӨJC
2.08
°C/W
Storage Temperature Range
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Document Number: DS_P0000251
1
Version: D15
TSC136
High Voltage NPN Transistor
Electrical Specifications
Parameter
Conditions
Static
Collector-Base Voltage
a
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
a
IC = 10mA, IB = 0
IC = 10mA, IE = 0
IE = 1mA, IC = 0
VCB = 700V, IE = 0
VEB = 9V, IC = 0
IC =0.5A, IB =0.1A
IC =0.6A, IB =60mA
IC =2A, IB =0.5A
VCE = 5V, IC = 10mA
Symbol
Min
Typ
Max
Unit
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)1
VCE(SAT)2
VCE(SAT)3
700
400
9
------
-------1.5
---100
10
0.5
0.7
2
V
V
V
uA
uA
hFE 1
10
27
--
VCE = 5V, IC = 1A
hFE 2
10
--
30
VCE = 5V, IC = 2A
hFE 3
4
--
24
V
Frequency
VCE = 10V, IC = 0.1A
fT
4
--
--
MHz
Output Capacitance
VCB = 10V, f = 0.1MHz
Cob
--
21
--
pF
Turn On Time
VCC = 125V, IC = 1A,
tON
--
0.4
--
uS
Storage Time
IB1 = 0.2A, IB2 = 0.2A,
tSTG
--
2.0
--
uS
Fall Time
RL = 125ohm
tf
--
0.16
--
uS
Notes:
a. Pulsed duration = 300uS, duty cycle ≤ 1.5%
Document Number: DS_P0000251
2
Version: D15
TSC136
High Voltage NPN Transistor
Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. Vce(sat) v.s. Vbe(sat)
Figure 4. Power Derating
Figure 5. Reverse Bias SOA
Figure 6. Safety Operating Area
Document Number: DS_P0000251
3
Version: D15
TSC136
High Voltage NPN Transistor
TO-220 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
TO-220 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
10.000
10.500
0.394
0.413
3.740
3.910
0.147
0.154
2.440
2.940
0.096
0.116
6.350
0.250
0.75
0.85
0.029
0.033
2.345
2.715
0.092
0.058
4.690
5.430
0.092
0.107
12.700
14.732
0.500
0.581
14.224
16.510
0.560
0.650
3.556
4.826
0.140
0.190
1.285
1.315
0.050
0.051
27.700
29.620
1.060
1.230
2.032
2.921
0.080
0.115
0.255
0.610
0.010
0.024
5.842
6.858
0.230
0.270
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code
Document Number: DS_P0000251
4
Version: D15
TSC136
High Voltage NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
Document Number: DS_P0000251
5
Version: D15