Composite Transistors XN04604 (XN4604) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 2 1 (0.65) 3 0.30+0.10 –0.05 ■ Basic Part Number 0.50+0.10 –0.05 • 2SD1328 + 2SB0970 (2SB970) Overall Rating Unit VCBO 25 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 12 V Collector current IC 0.5 A Peak collector current ICP 1 A Collector-base voltage (Emitter open) VCBO −15 V Collector-emitter voltage (Base open) VCEO −10 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC − 0.5 A Peak collector current ICP −1 A Total power dissipation PT 300 mW 0 to 0.1 Parameter Tr2 Symbol Collector-base voltage (Emitter open) 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ : SC-74 Tj 150 °C Storage temperature Tstg −55 to +150 °C 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package Marking Symbol: 5I Internal Connection 4 5 Tr2 Junction temperature 1.1+0.3 –0.1 1.1+0.2 –0.1 10˚ ■ Absolute Maximum Ratings Ta = 25°C Tr1 0.4±0.2 6 5˚ 5 1.50+0.25 –0.05 4 ■ Features 0.16+0.10 –0.06 2.8+0.2 –0.3 For amplification of low-frequency output 3 6 Tr1 2 1 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00084BED 1 XN04604 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 25 Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 12 V Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0 Forward current transfer ratio *1 hFE1 VCE = 2 V, IC = 0.5 A 200 hFE2 VCE = 2 V, IC = 1 A 60 Collector-emitter saturation voltage *1 Base-emitter saturation voltage *1 Transition frequency Conditions VCE(sat) IC = 0.5 A, IB = 20 mA VBE(sat) IC = 0.5 A, IB = 20 mA fT Collector output capacitance (Common base, input open circuited) Cob ON resistance *2 Ron Min Typ Max Unit V 0.13 0.1 µA 800 0.40 V 1.2 V VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 10 pF 1.0 Ω Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement 1 kΩ *2: Ron test circuit IB = 1 mA f = 1 kHz V = 0.3 V VB VV Ron = • Tr2 VA VB × 1 000 (Ω) V A − VB Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −15 V Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −10 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0 Forward current transfer ratio * hFE1 VCE = −2 V, IC = − 0.5 A 100 hFE2 VCE = −2 V, IC = −1 A 60 V − 0.1 µA 350 Collector-emitter saturation voltage VCE(sat) IC = − 0.4 A, IB = −8 mA − 0.16 − 0.30 V Base-emitter saturation voltage VBE(sat) IC = − 0.4 A, IB = −8 mA − 0.8 V VCB = −10 V, IE = 50 mA, f = 200 MHz 130 MHz VCB = −10 V, IE = 0, f = 1 MHz 22 pF Transition frequency Collector output capacitance (Common base, input open circuited) fT Cob −1.2 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement 2 SJJ00084BED XN04604 Common characteristics chart PT Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of Tr1 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) Ta = 25°C IB = 4.0 mA Collector current IC (A) 3.5 mA 3.0 mA 0.8 2.5 mA 2.0 mA 0.6 1.5 mA 0.4 1.0 mA 0.2 0 0.5 mA 0 1 2 3 4 5 6 10 1 Ta = 75°C 10−1 10−2 10−2 VCE = 2 V Transition frequency fT (MHz) Forward current transfer ratio hFE Ta = 75°C 25°C −25°C 200 10−1 25°C 1 Ta = −25°C 75°C 10−1 10−2 10−2 10 1 Collector current IC (A) 10 VCB = 10 V Ta = 25°C 200 100 −10 Emitter current IE (mA) SJJ00084BED 1 10 Cob VCB 300 0 −1 10−1 Collector current IC (A) fT I E 800 0 10−2 1 400 1 000 400 10−1 IC / IB = 10 10 Collector current IC (A) hFE IC 600 25°C −25°C Collector-emitter voltage VCE (V) 1 200 VBE(sat) IC 102 IC / IB = 25 −102 Collector output capacitance C (pF) (Common base, input open circuited) ob 1.0 102 Base-emitter saturation voltage VBE(sat) (V) IC VCE 1.2 24 f = 1 MHz IE = 0 Ta = 25°C 20 16 12 8 4 0 1 10 102 Collector-base voltage VCB (V) 3 XN04604 Characteristics charts of Tr2 VCE(sat) IC IB = −10 mA Collector current IC (A) −9 mA −8 mA −7 mA −6 mA − 0.8 −5 mA − 0.6 −4 mA −3 mA − 0.4 −2 mA − 0.2 0 −1 mA −1 0 −2 −3 −4 −5 −6 IC / IB = 50 −10 −1 Ta = 75°C 25°C −10−2 −10−2 Transition frequency fT (MHz) Forward current transfer ratio hFE Ta = 75°C 25°C 300 −25°C 200 100 −1 Collector current IC (A) 4 25°C −1 −10 −10−1 −10 −10−2 −10−2 120 80 40 10 Emitter current IC (mA) SJJ00084BED −1 −10 Cob VCB VCB = −10 V Ta = 25°C 1 −10−1 Collector current IC (A) 160 0 Ta = −25°C 75°C fT I E 500 −10−1 −1 200 VCE = −2 V 0 −10−2 −10−1 IC / IB = 50 −10 Collector current IC (A) hFE IC 400 −25°C −10−1 Collector-emitter voltage VCE (V) 600 VBE(sat) IC −102 102 Collector output capacitance C (pF) (Common base, input open circuited) ob −1.0 −102 Base-emitter saturation voltage VBE(sat) (V) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE −1.2 80 f = 1 MHz IE = 0 Ta = 25°C 60 40 20 0 −1 −10 −102 Collector-base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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