1n1199a.pdf

1N1199A ... 1N1206A, 1N3671, 1N3673, PBY271 ... PB277
1N1199A ... 1N1206A, 1N3671, 1N3673,
PBY271 ... PB277
Silicon-Power-Rectifiers
Silizium-Leistungs-Gleichrichter
Version 2007-05-09
Nominal Current
Nennstrom
7
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
10
Ø2
30
Type
12 A
50 ... 1000 V
Metal case
Metallgehäuse
DO-4
Weight approx. – Gewicht ca.
5.5 g
Standard polarity: Cathode to stud / Kathode am Gewinde
Index R: Anode to stud / Anode am Gewinde (e. g. 1N1199AR)
10
SW11
M5
Standard packaging: bulk
Standard Lieferform: lose im Karton
Dimensions - Maße [mm]
Maximum ratings
Type
Typ
Grenzwerte
Repetive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
1N1199A = PBY271
50
60
1N1200A = PBY272
100
120
1N1202A = PBY273
200
240
1N1204A = PBY274
400
480
1N1206A = PBY275
600
720
1N3671 = PBY276
800
1000
1N3673 = PBY277
1000
1200
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 85°C
IFAV
12 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
40 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
200/240 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
240 A2s
Tj
TS
-65...+175°C
-65...+175°C
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
1
Max. case temperature TC = 85°C – Max. Gehäusetemperatur TC = 85°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
1N1199A ... 1N1206A, 1N3671, 1N3673, PBY271 ... PB277
Characteristics
Kennwerte
Forward Voltage – Durchlass-Spannung
Tj = 25°C
IF = 30 A
VF
< 1.5 V
Leakage Current – Sperrstrom
Tj = 25°C
VR = VRRM
IR
< 100 µA
RthC
< 2 K/W
Thermal Resistance Junction – Case
Wärmewiderstand Sperrschicht – Gehäuse
Recommended mounting torque
Empfohlenes Anzugsdrehmoment
10-20 UNF
M5
120
18 ± 10% lb.in.
2 ± 10% Nm
3
10
[%]
[A]
100
2
10
80
10
60
Tj = 25°C
Tj = 125°C
40
1
20
IF
IFAV
0
0
TC
100
50
150
10-1
[°C]
Rated forward current versus case temperature
Zul. Richtstrom in Abh. von der Gehäusetemp.
220a-(30a-1,5v)
0.4
VF
0.8
1.0
1.2
1.4
[V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
103
[A]
2
10
îF
10
1
© Diotec Semiconductor AG
10
102
[n]
103
Peak forward surge current versus number of cycles at 50 Hz
Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
http://www.diotec.com/
2
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