TSM150P03PQ33 Taiwan Semiconductor P-Channel Power MOSFET -30V, -36A, 15mΩ FEATURES PRODUCT SUMMARY ● Low RDS(ON) to minimize conductive Loss PARAMETER VALUE UNIT VDS -30 V ● Low gate charge for fast power switching ● 100% UIS tested ● Compliant to RoHS Directive 2011/65/EU and in RDS(on) (max) accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 definition VGS = -10V 15 VGS = -4.5V 30 Qg mΩ 14.3 nC APPLICATIONS ● DC-DC Converters ● Battery Power Management ● Oring FET/Load Switch PDFN33 Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) TA = 25°C (Note 1) ID -36 -10 A IDM -144 A Single Pulse Avalanche Current (Note 2) IAS -31 A Single Pulse Avalanche Energy (Note 2) EAS 48 mJ Total Power Dissipation Total Power Dissipation TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range PD PD 27.8 5.5 2.3 0.5 W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Thermal Resistance – Junction to Case RӨJC 4.5 °C/W Thermal Resistance – Junction to Ambient RӨJA 53 °C/W THERMAL RESISTANCE PARAMETER Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: B1601 TSM150P03PQ33 Taiwan Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN. TYP. MAX. UNIT (Note 3) Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA BVDSS -30 -- -- V Gate Threshold Voltage VGS = VDS, ID = -250µA VGS(TH) -1.2 -1.6 -2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Drain-Source Leakage Current VGS = 0V, VDS = -30V IDSS -- -- -1 µA -- 13 15 -- 22 30 gfs -- 19 -- Qg -- 29.3 -- VGS = -10V, ID = -10A Drain-Source On-State Resistance VGS = -4.5V, ID = -10A VDS = -5V, ID = -10A Forward Transconductance Dynamic RDS(on) mΩ S (Note 4) VGS = -10V, VDS = -15V, Total Gate Charge ID = -10A Total Gate Charge Qg VGS = -4.5V, Gate-Source Charge VDS = -15V, ID = -10A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = -15V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Switching 14.3 nC Qgs -- 5.9 -- Qgd -- 5.2 -- Ciss -- 1829 -- Coss -- 227 -- Crss -- 160 -- td(on) -- 9 -- tr -- 21.8 -- td(off) -- 59.8 -- tf -- 14.4 -- VSD -- -- -1 V pF (Note 4) Turn-On Delay Time Rise Time VGS = -10V, VDS = -15V, Turn-Off Delay Time ID = -1A, RG = 6Ω, Fall Time Source-Drain Diode ns (Note 3) Diode Forward Voltage VGS = 0V, IS = -10A Reverse Recovery Time IS = -10A, trr -- 34 -- ns Reverse Recovery Charge di/dt = 100A/μs Qrr -- 23 -- nC Notes: 1. Current limited by package. 2. L = 0.1mH, VGS = -10V, VDS = -25V, RG = 25Ω, IAS = -31A, Starting TJ = 25°C 3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. TSM150P03PQ33 RGG PACKAGE PACKING PDFN33 5,000pcs / 13” Reel 2 Version: B1601 TSM150P03PQ33 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) On-Resistance vs. Junction Temperature Normalized Gate Threshold RDS(on), Drain-Source On-Resistance (Normalized) Normalized Vth vs. TJ TJ, Junction Temperature (°C) TJ, Junction Temperature (℃) Capacitance vs. Drain-Source Voltage Gate-Source Voltage vs. Gate Charge 10 C, Capacitance (pF) 2000 -VGS, Gate to Source Voltage (V) 2500 CISS 1500 1000 500 COSS CRSS 0 0 5 10 15 20 25 VDS=-15V ID=-10A 8 6 4 2 0 30 0 -VDS, Drain to Source Voltage (V) 12 18 24 30 Qg, Gate Charge (nC) Normalized Thermal Transient Impedance, Junctionto-Case Maximum Safe Operating Area, Junction-to-Case 1000 10 SINGLE PULSE RӨJC=4.5°C/W ID, Drain Current (A) Normalized Effective Transient Thermal Impedance 6 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 RDS(ON) 100 10 1 SINGLE PULSE RӨJC=4.5°C/W TC=25°C 0.1 0.001 0.01 0 0.1 t, Square Wave Pulse Duration (sec) 1 10 100 VDS, Drain to Source Voltage (V) 3 Version: B1601 TSM150P03PQ33 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN33 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) 4 Version: B1601 TSM150P03PQ33 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: B1601