TSM250N02CX_A14.pdf

TSM250N02CX
20V N-Channel Power MOSFET
SOT-23
Key Parameter Performance
Pin Definition:
1. Gate
2. Source
3. Drain
Parameter
Value
Unit
VDS
20
V
RDS(on) (max)
VGS = 4.5V
25
VGS = 2.5V
35
VGS = 1.8V
55
Qg
nC
Block Diagram
Ordering Information
Part No.
7.7
mΩ
Package
Packing
TSM250N02CX RFG
SOT-23
3kpcs / 7” Reel
● Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
N-Channel MOSFET
Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±10
V
5.8
A
3.7
A
IDM
23.2
A
Power Dissipation @ TC = 25°C
PD
1.56
W
Operating Junction Temperature
TJ
150
°C
TSTG
-55 to +150
°C
Symbol
Limit
Unit
RӨJA
80
°C/W
Parameter
Continuous Drain Current
Pulsed Drain Current
TC = 25°C
TC = 100°C
(Note 1)
Storage Temperature Range
ID
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient
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Version: A14
TSM250N02CX
20V N-Channel Power MOSFET
Electrical Specifications (TC = 25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
BVDSS
20
--
--
V
--
20
25
--
27
35
--
39
55
0.4
0.6
0.8
--
--
1
--
--
10
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 4A
Drain-Source On-State Resistance
VGS = 2.5V, ID = 3A
RDS(on)
VGS = 1.8V, ID = 2A
Gate Threshold Voltage
VDS = VGS, ID = 250µA
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
(Note 2)
VDS = 16V, VGS = 0V
VDS = 16V, TJ = 85°C
VGS(TH)
IDSS
mΩ
V
µA
VGS = ±10V, VDS = 0V
IGSS
--
--
±100
nA
VDS = 10V, IS = 3A
gfs
--
6.5
--
S
Qg
--
7.7
--
Qgs
--
0.9
--
Qgd
--
2.4
--
Ciss
--
535
--
Coss
--
60
--
Crss
--
34
--
td(on)
--
4.1
--
tr
--
11.6
--
td(off)
--
23.9
--
tf
--
7.6
--
IS
--
--
5.8
A
ISM
--
--
23.2
A
VSD
--
--
1
V
Dynamic
Total Gate Charge (Note 2,3)
Gate-Source Charge
Gate-Drain Charge
(Note 2,3)
(Note 2,3)
VDS = 10V, ID = 4A,
VGS = 4.5V
Input Capacitance
VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
nC
pF
Switching
Turn-On Delay Time (Note 2,3)
Turn-On Rise Time
(Note 2,3)
Turn-Off Delay Time
(Note 2,3)
VDD = 10V, ID = 1A,
VGS = 4.5V, RG = 25Ω
Turn-Off Fall Time (Note 2,3)
ns
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulse Drain-Source Diode
Forward Current
Diode-Source Forward Voltage
Integral reverse diode in
the MOSFET
VGS = 0V, IS = 1A
Note:
1.
Pulse width limited by safe operating area
2.
Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
3.
Switching time is essentially independent of operating temperature.
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Version: A14
TSM250N02CX
20V N-Channel Power MOSFET
Electrical Characteristics Curve
Gate Charge
ID, Continuous Drain Current (A)
VGS , Gate to Source Voltage (V)
Continuous Drain Current vs. TC
Qg, Gate Charge (nC)
TC, Case Temperature (°C)
Threshold Voltage vs. Junction Temperature
Normalized On Resistance (mW)
Normalized Gate Threshold Voltage (V)
On-Resistance vs. Junction Temperature
TJ, Junction Temperature (°C)
Normalized Thermal Transient Impedance Curve
ID, Continuous Drain Current (A)
Normalized Thermal Response (RθJA)
Maximum Safe Operating Area
TJ, Junction Temperature (°C)
VDS, Drain to Source Voltage (V)
3/5
Square Wave Pulse Duration (s)
Version: A14
TSM250N02CX
20V N-Channel Power MOSFET
SOT-23 Mechanical Drawing
Unit: Millimeters
Marking Diagram
25 = Device Code
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
4/5
Version: A14
TSM250N02CX
20V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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Version: A14