TSM6866SD 20V Dual N-Channel MOSFET TSSOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 20 Features ID (A) 30 @ VGS = 4.5V 6.0 40 @ VGS = 2.5V 5.2 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Specially Designed for Li-on Battery Packs ● Battery Switch Application Ordering Information Part No. Package Packing TSSOP-8 3Kpcs / 13” Reel TSM6866SDCA RVG Dual N-Channel MOSFET Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25°C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 6 A Pulsed Drain Current IDM 30 A IS 1.7 A Continuous Source Current (Diode Conduction) Maximum Power Dissipation a,b Ta = 25°C PD Ta = 75°C Operating Junction Temperature 1.6 1.1 W TJ +150 °C TJ, TSTG -55 to +150 °C Symbol Limit Unit Junction to Case Thermal Resistance RӨJC 30 °C/W Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 62.5 °C/W Operating Junction and Storage Temperature Range Thermal Performance Parameter Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Document Number: DS_P0000128 1 Version: C15 TSM6866SD 20V Dual N-Channel MOSFET Electrical Specifications (Ta = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 20 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 0.6 -- -- V Gate Body Leakage VGS = ±12V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V IDSS -- -- 1.0 uA On-State Drain Current VDS =5V, VGS = 4.5V ID(ON) 30 -- -- A -- 21 30 -- 30 40 Drain-Source On-State Resistance VGS = 4.5V, ID = 6.0A VGS = 2.5V, ID = 5.2A RDS(ON) mΩ Forward Transconductance VDS = 10V, ID = 6A gfs -- 30 -- S Diode Forward Voltage IS = 1.7A, VGS = 0V VSD -- 0.7 1.2 V Qg -- 5 7 Qgs -- 1 -- Qgd -- 1.5 -- Ciss -- 565 -- Coss -- 105 -- Crss -- 75 -- td(on) -- 8 20 tr -- 10 20 td(off) -- 22 45 -- 6 15 b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 10V, ID = 6A, VGS = 4.5V VDS = 8V, VGS = 0V, f = 1.0MHz nC pF b,C Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V, RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Document Number: DS_P0000128 2 nS Version: C15 TSM6866SD 20V Dual N-Channel MOSFET Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Document Number: DS_P0000128 Source-Drain Diode Forward Voltage 3 Version: C15 TSM6866SD 20V Dual N-Channel MOSFET Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: DS_P0000128 4 Version: C15 TSM6866SD 20V Dual N-Channel MOSFET TSSOP-8 Mechanical Drawing DIM A a B C D E e F L TSSOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.20 6.60 0.244 0.260 4.30 4.50 0.170 0.177 2.90 3.10 0.114 0.122 0.65 (typ) 0.025 (typ) 0.25 0.30 0.010 0.019 1.05 1.20 0.041 0.049 0.05 0.15 0.002 0.009 0.127 0.005 0.50 0.70 0.020 0.028 Marking Diagram Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code Document Number: DS_P0000128 5 Version: C15 TSM6866SD 20V Dual N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000128 6 Version: C15