TSM080N03PQ56 Taiwan Semiconductor N-Channel Power MOSFET 30V, 73A, 8mΩ FEATURES PRODUCT SUMMARY ● Low RDS(ON) to minimize conductive Losses PARAMETER VALUE UNIT VDS 30 V ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS Directive 2011/65/EU and in RDS(on) (max) accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 definition VGS = 10V 8 VGS = 4.5V 12.5 Qg mΩ 7.2 nC APPLICATIONS ● DC-DC Converters ● Battery Power Management ● ORing FET/Load Switch PDFN56 Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) TA = 25°C (Note 1) ID 73 14 A IDM 292 A Single Pulse Avalanche Current (Note 2) IAS 23 A Single Pulse Avalanche Energy (Note 2) EAS 26 mJ Total Power Dissipation Total Power Dissipation TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range PD PD 69 14 2.6 0.5 W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Thermal Resistance – Junction to Case RӨJC 1.8 °C/W Thermal Resistance – Junction to Ambient RӨJA 48 °C/W THERMAL RESISTANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: C1602 TSM080N03PQ56 Taiwan Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN. TYP. MAX. UNIT (Note 3) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1 1.6 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Drain-Source Leakage Current VGS = 0V, VDS = 30V IDSS -- -- 1 µA -- 6.5 8 -- 9.5 12.5 gfs -- 30 -- Qg -- 14.4 -- VGS = 10V, ID = 14A Drain-Source On-State Resistance VGS = 4.5V, ID = 14A VDS = 5V, ID = 14A Forward Transconductance Dynamic RDS(on) mΩ S (Note 4) VGS = 10V, VDS = 15V, Total Gate Charge ID = 14A Total Gate Charge Qg VGS = 4.5V, VDS = 15V, Gate-Source Charge ID = 14A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 15V, Output Capacitance f = 1.0MHz Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz, open drain 7.2 nC Qgs -- 2.6 -- Qgd -- 3.3 -- Ciss -- 843 -- Coss -- 157 -- Crss -- 95 -- Rg 0.9 3 6 td(on) -- 4.8 -- tr -- 12.5 -- td(off) -- 27.6 -- tf -- 8.2 -- VSD -- -- 1 V pF Ω (Note 4) Turn-On Delay Time Rise Time VGS = 10V, VDS = 15V, Turn-Off Delay Time ID = 14A, RG = 3.3Ω, Fall Time Source-Drain Diode ns (Note 3) Diode Forward Voltage VGS = 0V, IS = 15A Reverse Recovery Time IS = 14A, trr -- 16 -- ns Reverse Recovery Charge di/dt = 100A/μs Qrr -- 8.3 -- nC Notes: 1. Current limited by package. 2. L = 0.1mH, VGS = 10V, VDS = 25V, RG = 25Ω, IAS = 23A, Starting TJ = 25°C 3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. TSM080N03PQ56 RLG PACKAGE PACKING PDFN56 2,500pcs / 13” Reel 2 Version: C1602 TSM080N03PQ56 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Normalized Vth vs. TJ On-Resistance vs. Junction Temperature 1.6 1.1 1 0.9 0.8 0.7 0.6 -50 0 50 100 150 RDS(on), Drain-Source On-Resistance (Normalized) Normalized Gate Threshold 1.2 1.4 1.2 1 0.8 0.6 -50 Capacitance vs. Drain-Source Voltage 100 150 Gate-Source Voltage vs. Gate Charge VGS, Gate to Source Voltage (V) 1000 C, Capacitance (pF) 50 10 1200 CISS 800 600 400 COSS 200 CRSS 0 0 5 10 VDS=15V ID=14A 8 6 4 2 0 15 20 25 30 0 VDS, Drain to Source Voltage (V) 3 6 9 12 15 Qg, Gate Charge (nC) On-Resistance vs. Gate-Source Voltage Maximum Safe Operating Area, Junction-to-Case 0.04 1000 0.035 0.03 ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Ω) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (℃) 0.025 0.02 0.015 ID=14A 0.01 RDS(ON) 100 10 SINGLE PULSE RӨJC=1.8°C/W TC=25°C 0.005 0 3 4 5 6 7 8 9 1 10 0 1 10 100 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) 3 Version: C1602 TSM080N03PQ56 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=1.8°C/W 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.01 0.1 t, Square Wave Pulse Duration (sec) 4 Version: C1602 TSM080N03PQ56 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) 5 Version: C1602 TSM080N03PQ56 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: C1602