TSM088NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 61A, 8.8mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive losses PARAMETER VALUE UNIT VDS 30 V ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 RDS(on) VGS = 10V 8.8 (max) VGS = 4.5V 11.4 mΩ Qg 6.3 nC APPLICATIONS ● DC-DC Converters ● Battery Power Management ● ORing FET/Load Switching PDFN56 Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) SYMBOL LIMIT UNIT Drain-Source Voltage PARAMETER VDS 30 V Gate-Source Voltage VGS ±20 V TC = 25°C Continuous Drain Current Pulsed Drain Current ID TA = 25°C (Note 1) (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation Total Power Dissipation TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range 61 13 A IDM 244 A IAS EAS 18 48.6 A mJ PD PD 56 11 2.6 0.5 W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 2.2 °C/W Junction to Ambient Thermal Resistance RӨJA 48 °C/W THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: B1602 TSM088NA03CR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1.2 1.9 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- 6.5 8.8 -- 9.5 11.4 gfs -- 45 -- Qg -- 12.6 -- Qg -- 6.3 -- Qgs -- 2.4 -- Qgd -- 2.3 -- Ciss -- 750 -- Coss -- 190 -- Crss -- 78 -- Rg 0.5 1.5 3 td(on) -- 9.6 -- tr -- 4.5 -- td(off) -- 25.5 -- tf -- 3.4 -- VSD -- -- 1.2 V VGS = 0V, VDS = 30V Drain-Source Leakage Current VGS = 0V, VDS = 30V IDSS TJ = 125°C Drain-Source On-State Resistance VGS = 10V, ID = 13A (Note 3) VGS = 4.5V, ID = 13A Forward Transconductance Dynamic (Note 3) VDS = 5V, ID = 13A RDS(on) µA mΩ S (Note 4) Total Gate Charge VGS = 10V, VDS = 15V, ID = 13A Total Gate Charge Gate-Source Charge Gate-Drain Charge VGS = 4.5V, VDS = 15V, ID = 13A Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching VGS = 0V, VDS = 15V f = 1.0MHz f = 1.0MHz, open drain nC pF Ω (Note 4) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VGS = 10V, VDS = 15V, ID = 7.5A, RG = 10Ω, RL = 2Ω Turn-Off Fall Time ns Source-Drain Diode Forward Voltage (Note 3) VGS = 0V, IS = 13A Reverse Recovery Time IS = 13A , trr -- 18 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 11.4 -- nC Notes: 1. 2. 3. 4. Current limited by package. L = 0.3mH, VGS = 10V, VDD = 25V, RG = 25Ω, IAS = 18A, Starting TJ = 25°C Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. Switching time is essentially independent of operating temperature. 2 Version: B1602 TSM088NA03CR Taiwan Semiconductor ORDERING INFORMATION PART NO. TSM088NA03CR RLG PACKAGE PACKING PDFN56 2,500pcs / 13” Reel 3 Version: B1602 TSM088NA03CR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 40 ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) 40 VGS=10V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 32 24 16 8 0 32 24 16 25℃ 8 0 0 1 2 3 4 0 On-Resistance vs. Drain Current 2 3 4 5 Gate-Source Voltage vs. Gate Charge 10 0.018 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 0.016 0.014 0.012 VGS=4.5V 0.01 0.008 0.006 VGS=10V 0.004 0.002 VDS=15V ID=13A 8 6 4 2 0 0 8 16 24 32 40 0 3 On-Resistance vs. Junction Temperature RDS(on), Drain-Source On-Resistance (Ω) 1.6 1.4 1.2 1 VGS=10V ID=13A 0.6 -75 -50 -25 0 25 50 75 9 12 15 On-Resistance vs. Gate-Source Voltage 1.8 0.8 6 Qg, Gate Charge (nC) ID, Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) -55℃ 150℃ 100 125 150 0.06 0.05 0.04 0.03 0.02 ID=13A 0.01 0 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) 4 Version: B1602 TSM088NA03CR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature BVDSS (Normalized) Drain-Source Breakdown Voltage Capacitance vs. Drain-Source Voltage 1000 C, Capacitance (pF) 900 800 CISS 700 600 500 400 300 COSS 200 CRSS 100 0 0 5 10 15 20 25 1.2 1.1 ID=1mA 1 0.9 0.8 30 -75 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage 100 IS, Reverse Drain Current (A) 1000 ID, Drain Current (A) -50 RDS(ON) 100 10 SINGLE PULSE RӨJC=2.2°C/W TC=25°C 1 150℃ 10 25℃ 1 -55℃ 0.1 0 1 10 100 0.2 VDS, Drain to Source Voltage (V) 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC 10 SINGLE PULSE RӨJC=2.2°C/W 1 0.1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 0.01 0.001 0.00001 0.0001 0.001 Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.01 0.1 t, Square Wave Pulse Duration (sec) 5 Version: B1602 TSM088NA03CR Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 6 Version: B1602 TSM088NA03CR Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: B1602