TSM033NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 129A, 3.3mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive loss PARAMETER VALUE UNIT VDS 30 V ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 RDS(on) VGS = 10V 3.3 (max) VGS = 4.5V 4.4 mΩ Qg 31 nC APPLICATION ● DC-DC Converters ● 12V Battery Portable System ● Oring FET/Load Switching PDFN 5x6 Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TC = 25°C Continuous Drain Current Pulsed Drain Current ID TA = 25°C (Note 1) (Note 2) Single Pulsed Avalanche Current (Note 2) Single Pulsed Avalanche Energy Total Power Dissipation Total Power Dissipation TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range 129 21 A IDM 516 A IAS EAS 29 126 A mJ PD PD 96 19 2.6 0.5 W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1.3 °C/W Junction to Ambient Thermal Resistance RӨJA 48 °C/W THERMAL PERFORMANCE PARAMETER Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: A1511 TSM033NA03CR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 3) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1.2 1.6 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- 2.7 3.3 -- 3.6 4.4 gfs -- 69 -- Qg -- 31 -- Qg -- 16 -- Qgs -- 5.6 -- Qgd -- 5.5 -- Ciss -- 1850 -- Coss -- 418 -- Crss -- 189 -- Rg 0.4 1.4 2.8 td(on) -- 16.3 -- tr -- 7.8 -- td(off) -- 47 -- tf -- 11.5 -- VSD -- -- 1.2 V VGS = 0V, VDS = 30V Drain-Source Leakage Current VGS = 0V, VDS = 30V IDSS TJ = 125°C Drain-Source On-State Resistance Forward Transconductance Dynamic VGS = 10V, ID = 21A VGS = 4.5V, ID = 21A VDS = 5V, ID = 21A RDS(on) µA mΩ S (Note 4) VGS = 10V, VDS = 15V, Total Gate Charge ID = 21A Total Gate Charge VGS = 4.5V, VDS = 15V, Gate-Source Charge ID = 21A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 15V Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz f = 1.0MHz, open drain nC pF Ω (Note 4) Turn-On Delay Time VGS = 10V, VDS = 15V, Turn-On Rise Time ID = 12A, RG = 10Ω, Turn-Off Delay Time RL = 1.25Ω Turn-Off Fall Time Source-Drain Diode ns (Note 3) Forward Voltage VGS = 0V, IS = 21A Reverse Recovery Time IS = 21A , trr -- 32 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 26 -- nC Notes: 1. 2. 3. 4. Current limited by package. L = 0.3mH, VGS = 10V, VDS = 25V, RG = 25Ω, IAS = 29A, Starting TJ = 25°C Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. Switching time is essentially independent of operating temperature. 2 Version: A1511 TSM033NA03CR Taiwan Semiconductor ORDERING INFORMATION PART NO. TSM033NA03CR RLG PACKAGE PACKING PDFN56 2,500pcs / 13” Reel 3 Version: A1511 TSM033NA03CR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 40 VGS=10V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 32 ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) 40 VGS=3V 24 16 8 32 24 25℃ 16 8 150℃ 0 1 2 3 0 4 On-Resistance vs. Drain Current 2 3 4 Gate-Source Voltage vs. Gate Charge 10 0.006 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 0.0055 0.005 0.0045 0.004 VGS=4.5V 0.0035 0.003 0.0025 VGS=10V VDS=15V ID=21A 8 6 4 2 0 0.002 0 8 16 24 32 0 40 5 10 15 20 25 30 35 Qg, Gate Charge (nC) ID, Drain Current (A) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage 2 100 IS, Reverse Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) -55℃ 0 0 1.8 1.6 1.4 1.2 1 VGS=10V ID=21A 0.8 25℃ 10 -55℃ 1 150℃ 0.6 0.1 -75 -50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) TJ, Junction Temperature (°C) 4 Version: A1511 TSM033NA03CR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage 2000 BVDSS (Normalized) Drain-Source Breakdown Voltage C, Capacitance (pF) 2500 CISS 1500 1000 COSS 500 CRSS 0 1.2 ID=1mA 1.1 1 0.9 0.8 0 5 10 15 20 25 30 -75 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VDS, Drain to Source Voltage (V) Maximum Safe Operating Area, Junction-to-Case 1000 ID, Drain Current (A) RDS(ON) 100 10 SINGLE PULSE RӨJC=1.3°C/W TC=25°C 1 0 1 10 100 VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 10 1 0.1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 0.01 0.001 0.00001 0.0001 0.001 SINGLE PULSE RӨJC=1.3°C/W 0.01 0.1 t, Square Wave Pulse Duration (sec) 5 Version: A1511 TSM033NA03CR Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 6 Version: A1511 TSM033NA03CR Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: A1511