TSM10N60CZ/TSM10N60CI Taiwan Semiconductor N-Channel Power MOSFET 600V, 10A, 0.75Ω FEATURES KEY PERFORMANCE PARAMETERS ● Advanced high dense cell design. PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 0.75 Ω Qg 39 nC ● High power and Current handing capability ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 definition APPLICATIONS ● Power Supply ● Lighting TO-220 ITO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL TO-220 ITO-220 UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V 10 A 6 A 40 A Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) ID TC = 100°C (Note 2) IDM Total Power Dissipation @ TC = 25°C PDTOT 166 50 W Single Pulse Avalanche Energy (Note 3) EAS 41 mJ Single Pulse Avalanche Current (Note 3) IAS 10 A TJ, TSTG - 55 to +150 °C SYMBOL Limit UNIT Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Junction to Case Thermal Resistance RӨJC Junction to Ambient Thermal Resistance RӨJA 0.75 2.5 63 °C/W °C/W Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air. 1 Version: E1603 TSM10N60CZ/TSM10N60CI Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 3.1 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 20 µA RDS(on) -- 0.61 0.75 Ω Qg -- 45.8 -- Qgs -- 11.5 -- Qgd -- 16 -- Ciss -- 1738 -- Coss -- 195 -- Drain-Source On-State Resistance (Note 4) Dynamic VGS = 10V, ID = 5A (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 300V, ID = 10A, VGS = 10V Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 25V, VGS = 0V, f = 1.0MHz Crss nC pF 26.3 (Note 6) Turn-On Delay Time Turn-On Rise Time VDD = 300V, RG = 10Ω, Turn-Off Delay Time ID = 10A, VGS = 10V, Turn-Off Fall Time td(on) -- 33.6 -- tr -- 7.4 -- td(off) -- 68 -- tf -- 15.2 -- VSD -- 0.8 1.5 ns Source-Drain Diode Forward Voltage (Note 4) IS = 10A, VGS = 0V V Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. 3. L = 0.75mH, IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. 2 Version: E1603 TSM10N60CZ/TSM10N60CI Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKAGE PACKING TSM10N60CZ C0 TO-220 50pcs/Tube TSM10N60CI C0 ITO-220 50pcs/Tube TSM10N60CZ C0G TO-220 50pcs/Tube TSM10N60CI C0G ITO-220 50pcs/Tube 3 Version: E1603 TSM10N60CZ/TSM10N60CI Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics Threshold Voltage Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 4 Version: E1603 TSM10N60CZ/TSM10N60CI Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Capacitance Characteristics Maximum Safe Operating Area - ITO-220 Normalized Thermal Transient Impedance 5 Version: E1603 TSM10N60CZ/TSM10N60CI Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-220 MARKING DIAGRAM Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 6 Version: E1603 TSM10N60CZ/TSM10N60CI Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) ITO-220 MARKING DIAGRAM G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 7 Version: E1603 TSM10N60CZ/TSM10N60CI Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8 Version: E1603