TSM120N06LCS Taiwan Semiconductor N-Channel Power MOSFET 60V, 23A, 12mΩ FEATURES KEY PERFORMANCE PARAMETERS ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VDS 60 V RDS(on) VGS = 10V 12 (max) VGS = 4.5V 15 mΩ Qg 19 nC APPLICATIONS ● Motor Control for BLDC ● Battery Power Management SOP-8 Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage TC = 25°C Continuous Drain Current Pulsed Drain Current (Note 1) (Note 2) Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy Total Power Dissipation LIMIT UNIT VDS 60 V VGS ±20 V ID TA = 25°C Total Power Dissipation SYMBOL TC = 25°C TC = 125°C TA = 25°C TA = 125°C Operating Junction and Storage Temperature Range 23 10 A IDM 92 A IAS EAS 19 54 A mJ PD PD 12.5 2.5 2.2 0.4 W W TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 10 °C/W Junction to Ambient Thermal Resistance RӨJA 57 °C/W THERMAL PERFORMANCE PARAMETER Thermal Performance Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. 1 Version: A1601 TSM120N06LCS Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 3) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 60 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1.2 1.7 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA -- -- 1 -- -- 100 -- 10.4 12 -- 11.9 15 gfs -- 38 -- Qg -- 37 -- Qg -- 19 -- Qgs -- 6 -- Qgd -- 8 -- Ciss -- 2193 -- Coss -- 208 -- Crss -- 88 -- Rg 0.4 1.5 3 td(on) -- 6.4 -- tr -- 3.6 -- td(off) -- 23 -- tf -- 5 -- VSD -- -- 1 V VGS = 0V, VDS = 60V Drain-Source Leakage Current VGS = 0V, VDS = 60V IDSS TJ = 125°C Drain-Source On-State Resistance Forward Transconductance Dynamic VGS = 10V, ID = 10A VGS = 4.5V, ID = 10A VDS = 5V, ID = 10A RDS(on) µA mΩ S (Note 4) VGS = 10V, VDS = 30V, Total Gate Charge ID = 10A Total Gate Charge VGS = 4.5V, VDS = 30V, Gate-Source Charge ID = 10A Gate-Drain Charge Input Capacitance VGS = 0V, VDS = 30V Output Capacitance Reverse Transfer Capacitance Gate Resistance Switching f = 1.0MHz f = 1.0MHz, open drain nC pF Ω (Note 4) Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 30V, Turn-Off Delay Time ID = 11A, RG = 2Ω, Turn-Off Fall Time Source-Drain Diode ns (Note 3) Forward Voltage VGS = 0V, IS = 10A Reverse Recovery Time IS = 10A , trr -- 17 -- ns Reverse Recovery Charge dI/dt = 100A/μs Qrr -- 13 -- nC Notes: 1. 2. 3. 4. Current limited by package. L = 0.3mH, VGS = 10V, VDD = 30V, RG = 25Ω, IAS = 19A, Starting TJ = 25°C Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. Switching time is essentially independent of operating temperature. 2 Version: A1601 TSM120N06LCS Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKAGE PACKING TSM120NA06LCS RLG SOP-8 2,500pcs / 13” Reel 3 Version: A1601 TSM120N06LCS Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics 40 ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) 40 32 VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=4V VGS=3.5V 24 16 VGS=3V 8 32 24 25℃ 16 -55℃ 8 150℃ 0 0 0 1 2 3 4 0 5 On-Resistance vs. Drain Current 3 4 Gate-Source Voltage vs. Gate Charge 0.014 VGS=4.5V 0.012 0.01 VGS=10V 0.008 0.006 0.004 VDS=30V ID=10A 8 6 4 2 0 0.002 0 8 16 24 32 0 40 8 16 24 32 40 Qg, Gate Charge (nC) ID, Drain Current (A) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage 2.5 100 VGS=10V ID=10A 2 IS, Reverse Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) 2 10 0.016 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.5 1 0.5 0 10 25℃ 150℃ -55℃ 1 0.1 -75 -50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage (V) TJ, Junction Temperature (°C) 4 Version: A1601 TSM120N06LCS Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage BVDSS (Normalized) Drain-Source Breakdown Voltage C, Capacitance (pF) 3000 2500 CISS 2000 1500 1000 500 CRSS COSS 0 1.2 ID=1mA 1.1 1 0.9 0.8 0 10 20 30 40 50 60 -75 VDS, Drain to Source Voltage (V) -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area, Junction-to-Case 100 ID, Drain Current (A) RDS(ON) 10 1 SINGLE PULSE RӨJC=10°C/W TC=25°C 0.1 0 1 10 100 VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 10 1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single 0.1 0.01 0.0001 0.001 0.01 0.1 SINGLE PULSE RӨJC=10°C/W 1 t, Square Wave Pulse Duration (sec) 5 Version: A1601 TSM120N06LCS Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOP-8 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM 120N06 YML Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) 6 Version: A1601 TSM120N06LCS Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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