TSM80N950CI Taiwan Semiconductor N-Channel Power MOSFET 800V, 6A, 0.95Ω FEATURES KEY PERFORMANCE PARAMETERS ● Super-Junction technology PARAMETER VALUE UNIT VDS 800 V RDS(on) (max) 0.95 Ω Qg 19.6 nC ● High performance due to small figure-of-merit ● High ruggedness performance ● High commutation performance ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Power Supply ● Lighting ITO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 800 V Gate-Source Voltage VGS ±30 V 6 A 3.8 A IDM 18 A Continuous Drain Current Pulsed Drain Current TC = 25°C (Note 1) ID TC = 100°C (Note 2) Total Power Dissipation @ TC = 25°C PDTOT 25 W Single Pulse Avalanche Energy (Note 3) EAS 121 mJ Single Pulse Avalanche Current (Note 3) IAS 2.2 A TJ, TSTG - 55 to +150 °C Operating Junction and Storage Temperature Range 1 Version: A1604 TSM80N950CI Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 5 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air. ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 800 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 -- 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V IDSS -- -- 1 µA RDS(on) -- 0.8 0.95 Ω Qg -- 19.6 -- Qgs -- 3.5 -- Qgd -- 9.7 -- Drain-Source On-State Resistance (Note 4) Dynamic VGS = 10V, ID = 2A (Note 5) Total Gate Charge VDS = 380V, ID = 6A, Gate-Source Charge VGS = 10V Gate-Drain Charge nC Input Capacitance VDS = 100V, VGS = 0V, Ciss -- 691 -- Output Capacitance f = 1.0MHz Coss -- 63 -- Gate Resistance F = 1MHz, open drain Rg -- 3.4 -- td(on) -- 23 -- tr -- 12 -- td(off) -- 57 -- tf -- 11 -- VSD -- -- 1.4 V Switching pF Ω (Note 6) Turn-On Delay Time VDD = 380V, Turn-On Rise Time RGEN = 25Ω, Turn-Off Delay Time ID = 6A, VGS = 10V, Turn-Off Fall Time ns Source-Drain Diode Forward On Voltage (Note 4) IS = 6A, VGS = 0V Reverse Recovery Time VR = 100V, IS = 6A trr -- 249 -- ns Reverse Recovery Charge dIF/dt = 100A/μs Qrr -- 2.6 -- μC Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. 3. L = 50mH, IAS = 2.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. o 2 Version: A1604 TSM80N950CI Taiwan Semiconductor ORDERING INFORMATION PART NO. TSM80N950CI C0G PACKAGE PACKING ITO-220 50pcs / Tube 3 Version: A1604 TSM80N950CI Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Transfer Characteristics ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) Output Characteristics VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate-Source Voltage vs. Gate Charge VGS, Gate to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Drain Current Qg, Gate Charge (nC) ID, Continuous Drain Current (A) Source-Drain Diode Forward Current vs. Voltage IS, Body Diode Forward Current (A) RDS(on), Drain-Source On-Resistance (Normalized) On-Resistance vs. Junction Temperature VSD, Body Diode Forward Voltage (V) TJ, Junction Temperature (°C) 4 Version: A1604 TSM80N950CI Taiwan Semiconductor CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) BVDSS vs. Junction Temperature C, Capacitance (pF) BVDSS (Normalized) Drain-Source Breakdown Voltage Capacitance vs. Drain-Source Voltage VDS, Drain to Source Voltage (V) TJ, Junction Temperature (°C) ID, Continuous Drain Current (A) Maximum Safe Operating Area VDS, Drain to Source Voltage (V) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case 101 100 10 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse -1 10-2 10-3 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration (s) 5 Version: A1604 TSM80N950CI Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) ITO-220 MARKING DIAGRAM G Y WW F = Halogen Free = Year Code = Week Code (01~52) = Factory Code 6 Version: A1604 TSM80N950CI Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. 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