DATASHEET

ISL97653A
NS
DESIG
W
E
N
RT
OR
DED F CEMENT PA
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E
M
E CO M
E PL A
NOT R MENDED R September
Data Sheet
7, 2010
03
M
ISL986
R EC O
5-Channel Integrated LCD Supply
Features
The ISL97653A represents a fully integrated supply IC for
LCD-TV applications. With an input operating range of 4V to
14V, both commonly used LCD-TV input supplies, 5V and
12V, are supported. An AVDD supply up to 20V is generated
by a high-performance PWM BOOST converter with an
integrated 4.4A FET. VON is generated using an integrated
charge pump with on-chip diodes and can be modulated using
an on-chip VON slice control circuit. VOFF is generated using
an integrated charge pump controller. Additionally, the chip
allows for two logic supplies. A buck regulator with an
included 2.5A high side switch is used for the main logic
output and an internal LDO controller can be used to generate
a second logic LDO output.
• 5V to 14V Input Supply
FN6367.3
• Integrated 4.4A Boost Converter
• Integrated VON Charge Pump and VON Slice Circuit
• Integrated VOFF Charge Pump Output
• Integrated 2.5A Buck Converter
• LDO Controller for an Additional Logic Supply
• High Voltage Stress (HVS) Test Mode
• Thermal Shutdown
• 40 Ld QFN (6mmx6mm) Package
• Pb-Free (RoHS Compliant)
To facilitate production test, an integrated HVS circuit is
included which can provide high voltage stress of the LCD
panel.
Applications
An on-board temperature sensor is also provided for system
thermal management control.
• Industrial/Medical LCD Displays
Pinout
NOTE: These Intersil Pb-free plastic packaged products employ
special Pb-free material sets, molding compounds/die attach
materials, and 100% matte tin plate plus anneal (e3 termination
finish, which is RoHS compliant and compatible with both SnPb and
Pb-free soldering operations). Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed
the Pb-free requirements of IPC/JEDEC J STD-020.
1
TEMP
36
35
34
33
32
31
PVIN2
1
30 COMP
CB
2
29 FBB
LXL1
3
28 RSET
LXL2
4
27 HVS
PGND3
5
26 EN
PGND4
6
25 CDEL
CM2
7
24 CTL
FBL
8
23 DRN
VL
9
22 COM
VREF
10
21 POUT
11
12
13
14
15
16
17
18
19
20
FBP
*Please refer to TB347 for details on reel specifications.
PGND1
L40.6X6
37
SUPP
40 Ld 6X6 QFN
(Tape and Reel)
PGND2
ISL97653AIRZ-TK* 97653A IRZ
38
C2N
L40.6X6
LX1
40 Ld 6X6 QFN
(Tape and Reel)
39
C2P
97653A IRZ
LX2
ISL97653AIRZ-T*
40
C1N
L40.6X6
PROT
40 Ld 6X6 QFN
C1P
97653A IRZ
AGND
ISL97653AIRZ
PGND5
PKG.
DWG. #
PVIN1
PACKAGE
(Pb-Free)
NOUT
PART
MARKING
SUPN
PART NUMBER
(Note)
LDO-FB
Ordering Information
LDO-CTL
ISL97653A
(40 LD 6X6 QFN)
TOP VIEW
FBN
The ISL97653A is packaged in a 40 Ld 6mmx6mm QFN
package and is specified for operation over the -40°C to
+105°C temperature range.
• LCD-TVs
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2007, 2008, 2010. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL97653A
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Maximum Pin Voltages, All Pins Except Below . . . . . . . . . . . . . 6.5V
LX1, LX2, SUPP, SUPN, NOUT, PROT, C1N, C2N . . . . . . . . .24V
PVIN1, PVIN2, LXL1, LXL2 . . . . . . . . . . . . . . . . . . . . . . . . . 16.8V
EN, CTL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16.5V
DRN, POUT, COM, C1P, C2P. . . . . . . . . . . . . . . . . . . . . . . . . .33V
CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21V
Thermal Resistance
JA (°C/W)
JC (°C/W)
6x6 QFN Package (Notes 1, 2) . . . . . .
29
1
Operating Ambient Temperature Range . . . . . . . . -40°C to +105°C
Operating Junction Temperature . . . . . . . . . . . . . . -40°C to +150°C
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Input Voltage Range, VIN . . . . . . . . . . . . . . . . . . . . . . . . 4V to 14V
Input Capacitance, CIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2x10µF
Boost Output Voltage Range, AVDD . . . . . . . . . . . . . . . . . . . . +20V
Output Capacitance, COUT . . . . . . . . . . . . . . . . . . . . . . . . . . 3x22µF
Boost Inductor, L1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3µH-10µH
VON Output Range, VON . . . . . . . . . . . . . . . . . . . . . . +15V to +30V
VOFF Output Range, VOFF . . . . . . . . . . . . . . . . . . . . . . . -15V to -5V
Logic Output Voltage Range, VLOGIC . . . . . . . . . . . . +1.5V to +3.3V
Buck Inductor, L2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3µH to 10µH
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
2. For JC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
VIN = 12V, VBOOST = VSUPN = VSUPP = 15V, VON = 25V, VOFF = -8V, over-temperature from -40°C to
+105°C, unless otherwise stated.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
(Note 3)
MAX
(Note 3)
UNIT
14
V
4
5
mA
2.7
3.5
mA
580
680
780
kHz
1.190
1.215
1.240
V
1.187
1.215
1.243
V
TYP
SUPPLY PINS
VIN
Supply Voltage
IS
Quiescent Current
4
Enabled, no switching
Disabled
FSW
Switching Frequency
VREF
Reference Voltage
TA = +25°C
VLOR
Undervoltage Lockout Threshold
VL rising
3.4
3.55
3.7
V
VLOF
Undervoltage Lockout Threshold
VL falling
2.9
3.0
3.2
V
Thermal Shutdown
Temperature rising
Thermal Shutdown Hysteresis
150
°C
20
°C
LOGIC SIGNALS HVS, EN, CTL
Logic Input High
2.0
V
Logic Input Low
Pull-down Resistance
115
174
0.4
V
250
k
HVS, RSET
RSET
RSET Pull-down Resistance
HVS = HIGH
IRSET
RSET Leakage Current
HVS = LOW, VRSET = 1.2V

200
0.4
µA
12
%
AVDD BOOST
DLIM
Min Duty Cycle
8.5
Max Duty Cycle
90
2
%
FN6367.3
September 7, 2010
ISL97653A
Electrical Specifications
VIN = 12V, VBOOST = VSUPN = VSUPP = 15V, VON = 25V, VOFF = -8V, over-temperature from -40°C to
+105°C, unless otherwise stated. (Continued)
PARAMETER
DESCRIPTION
CONDITIONS
VBOOST
Boost Output Range
EFFBOOST
Boost Efficiency
VIN = 12V, VBOOST = 15V
VFB
Boost Feedback Voltage
TA = +25°C
MIN
(Note 3)
TYP
MAX
(Note 3)
UNIT
20
V
90+
%
1.203
1.215
1.227
V
1.198
1.215
1.232
V
3.7
4.4
5.1
A
IBOOST
Boost FET Current Limit
rDS(ON)-BOOST
Switch ON-Resistance
93
200
m
VBOOST/VIN
Line Regulation - Boost
0.08
0.15
%
VBOOST/IOUT
Load Regulation - Boost
Load 100mA to 200mA
0.004
1
%
EFFBUCK
Buck Efficiency
VIN = 5V, VLOGIC = 3.3V
IBUCK
Buck FET Current Limit
rDS(ON)-BUCK
Switch On Resistance
VLDO/IOUT
Load Regulation - Buck
Load 100mA to 500mA
VFL
Feedback Voltage
TA = +25°C
LOGIC BUCK
90+
2.6
%
4.7
A
150
210
m
0.5
1
%
1.195
1.215
1.235
V
1.189
1.215
1.241
V
VON CHARGE PUMP
ILoad_PCP_min
VFBP
External Load Driving Capability
Feedback Voltage, ION = 1mA
VON = 24V (2X Charge Pump)
40
mA
VON = 28V (3X Charge Pump)
40
mA
TA = +25°C
rON (VSUP_SW)
ON Resistance of VSUP Input Switch
I(switch) = +40mA
rON (C1/2-)H
High-Side Driver ON-Resistance at
C1- and C2-
I(C1/2-) = +40mA
rON (C1/2-)L
Low-Side Driver ON-Resistance at
C1- and C2-
I(C1/2-) = -40mA
VON Load Reg
VON Output Load Regulation
ION = 10mA to 40mA
V(diode)
Internal Schottky Diode Forward Voltage I(diode) = +40mA
Drop
1.195
1.215
1.235
V
1.189
1.215
1.241
V
10
17

30

10

4
0.3
700
%
800
mV
VOFF CHARGE PUMP
ILoad_NCP_min
External Load Driving Capability
SUPN > 13.5V VOFF = -8V
VFBN
Feedback Voltage, IOFF = 10mA
TA = +25°C
100
120
mA
0.173
0.203
0.233
V
0.171
0.203
0.235
V
rON (NOUT)H
High-Side Driver ON-Resistance at
NOUT
I(NOUT) = +60mA
10

rON (NOUT)L
Low-Side Driver ON-Resistance at
NOUT
I(NOUT) = -60mA
5

VOFF Load Reg
VOFF Output Load Reg
IOFF = 10mA to 100mA, TA = +25°C
2.4
%
Sink Current
VFBP = 1.1V, VLDO_CTL = 10V
LDO Controller
IDRVP
3
12
15
mA
FN6367.3
September 7, 2010
ISL97653A
Electrical Specifications
VIN = 12V, VBOOST = VSUPN = VSUPP = 15V, VON = 25V, VOFF = -8V, over-temperature from -40°C to
+105°C, unless otherwise stated. (Continued)
PARAMETER
LDO-FB
DESCRIPTION
CONDITIONS
Feedback Voltage w/transistor load 1mA TA = +25°C
MIN
(Note 3)
TYP
MAX
(Note 3)
UNIT
1.191
1.215
1.239
V
1.189
1.215
1.241
V
FAULT DETECTION THRESHOLDS
T_off
Thermal Shut-Down (latched and reset Temperature rising
by power cycle or EN cycle)
150
°C
Vth_AVDD(FBB)
AVDD Boost Short Detection
V(FBB) falling less than
0.9
V
Vth_POUT (FBP)
POUT Charge Pump Short Detection
V(FBP) falling less than
0.9
V
Vth_NOUT (FBN)
NOUT Charge Pump Short Detection
V(FBN) rising more than
0.4
V
CTL = VDD, sequence complete
400
500
µA
CTL = AGND, sequence complete
150
200
µA
VON Slice POSITIVE SUPPLY = V(POUT)
I(POUT)_slice
VON Slice Current from POUT Supply
rON (POUT-COM)
ON-Resistance between POUT-COM
CTL = VDD, sequence complete
5
10

rON (DRN-COM)
ON-Resistance between DRN-COM
CTL = AGND, sequence complete
30
60

rON_COM
ON-Resistance between DRN-COM
and PGND
200
260
400

PROT Pull-Down Current or Resistance VPROT > 0.9V
when Enabled by the Start-U
VPROT < 0.9V
38
50
60
µA
500
760
1000

2
3
4.5
mA
PROT
IPROT_ON
IPROT_OFF
PROT Pull-Up Current when Disabled
VPROT < 20V
NOTE:
3. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
4
FN6367.3
September 7, 2010
ISL97653A
Typical Application Diagram
D1
L1
VIN
M0
C30
OPTIONAL
R21 75k
6.8µH
C1
2.2µF
R22 75k
C2 R2
4.7nF 10k
C4
220nF
C5
220nF
C6
0.22µF
COMP
30
PGND1
32
PGND2
33
HVS
27
EN
26
PROT
36
C1P
15
C1N
16
C2P
17
C2N
18
CTL
24
CDEL
25
PGND5
VL
9
PVIN1
38
PVIN2
1
CM2
C8
4.7nF
C3
22µF
x3
BOOST
HVS
34
LX1
35
LX2
29
FBB
28
RSET
R4
5k
R5 20k
SEQUENCING/FAULT CONTROL
VON CP
R3
55k
19
SUPP
21
POUT
R6
983k
20
VON
C9
470nF
FBP
R8
1k
R7, 50k
23
R10
DRN
VON SLICE
22
COM
12
SUPN
10
VREF
11
FBN
13
NOUT
15
R9
C22 0.1µF
1k
14
C7
4.7µF
C0
10µF
AVDD
INTERNAL
REGULATOR
VOFF CP
7
R20 10k
BUCK
PGND3
5
PGND4
6
R11 40k
R12
328k
C11
220nF
VOFF
D2
2
C12
470nF
D3
CB
3
LXL1
C13
1µF
4
LXL2
D4
8
R17
100k
C19
220nF
L2
6.8µH
VLOGIC
C14
20µF
R13
2k
FBL
VLOGIC
R14
1.2k
VLOGIC2
R17
LDO CONTROLLER
AGND
5
37
40
LDO-CTL
39
LDO-FB
31
TEMP SENSOR
Q1
R15
5.4k
C15
4.7µF
R16
5k
TEMP
C16
10nF
FN6367.3
September 7, 2010
ISL97653A
Typical Application Diagram (Continued)
VREF PROT
RSET HVS
HVS
LOGIC
CM1
GM AMPLIFIER
FBB
VREF
SAWTOOTH
GENERATOR
SLOPE
COMPENSATION
+
CONTROL
LOGIC
Σ
UVLO COMPARATOR
LX1
LX2
BUFFER
+
RSENSE
CURRENT
AMPLIFIER
0.75 VREF
PGND1
PGND2
680kHz
OSCILLATOR
FREQ
VL
PVIN1, 2
CURRENT LIMIT
COMPARATOR
REGULATOR
REFERENCE BIAS
AND
CDEL
CURRENT LIMIT
THRESHOLD
SEQUENCE CONTROLLER
EN
VL
CB
PVIN1, 2
SUPN
LXL1
LXL2
NOUT
CONTROL
LOGIC
CURRENT
LIMIT
COMPARATOR
+
FBN
BUFFER
CURRENT AMPLIFIER
GM AMPLIFIER
SLOPE
COMPENSATION
CURRENT LIMIT
THRESHOLD
UVLO COMPARATOR
FBL
+
Σ
+
0.2V
CM2
VREF
SAWTOOTH
GENERATOR
+
0.4V
0.75 VREF
LDO
CONTROL
LOGIC2
+
TEMP
SENSOR
SUPP
FBP
+
LDO-CTL
LDO-FB
TEMP
VREF
POUT
SUPP
C1-
6
C1+
POUT
C2+
C2-
DRN
CTL
COM
FN6367.3
September 7, 2010
ISL97653A
Typical Performance Curves
0.5
90
LOAD REGULATION (%)
EFFICIENCY (%)
100
VIN = 12V
VIN = 8V
VIN = 5V
80
VIN = 8V
0.4
0.3
VIN = 5V
0.2
VIN = 12V
0.1
0.0
70
0
500
1000
0
1500
500
IO (mA)
0.08
100
0.06
90
VIN = 5V
0.04
IO = 100mA
0.02
0.00
80
VIN = 8V
VIN = 12V
70
60
-0.02
-0.04
5
IO = 400mA
6
7
8
9
10
11
12
13
50
14
0
500
1000
1500
2000
IO (mA)
VIN (V)
FIGURE 3. BOOST LINE REGULATION
FIGURE 4. BUCK EFFICIENCY
0.10
0.3
0.2
0.1
LINE REGULATION (%)
LOAD REGULATION (%)
1500
FIGURE 2. BOOST LOAD REGULATION
EFFICIENCY (%)
LINE REGULATION (%)
FIGURE 1. BOOST EFFICIENCY
VIN = 5V
0.0
VIN = 12V
-0.1
-0.2
-0.3
1000
IO (mA)
VIN = 8V
0
500
1000
1500
IO (mA)
FIGURE 5. BUCK LOAD REGULATION
7
2000
0.08
IO = 400mA
0.06
0.04
IO = 100mA
0.02
0.00
5
6
7
8
9
10
11
12
13
14
VIN (V)
FIGURE 6. BUCK LINE REGULATION
FN6367.3
September 7, 2010
ISL97653A
Typical Performance Curves (Continued)
1.2
LOAD REGULATION (%)
LOAD REGULATION (%)
0
VON = 25V
-1
-2
-3
-4
-5
0
10
20
30
40
50
60
ION (mA)
FIGURE 7. VON LOAD REGULATION
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
VON = 25V
0
10
20
30
ION (mA)
40
50
60
FIGURE 8. VOFF LOAD REGULATION
CH1 = AVDD (VBOOST)(500mV/DIV)
CH2 = IO (BOOST)(200mA/DIV)
LOAD REGULATION (%)
0.0
-0.2
-0.4
-0.6
-0.8
VLOGIC = 2.3V
-1.0
-1.2
-1.4
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
ILDO (mA)
1ms/DIV
FIGURE 9. LOGIC LDO LOAD REGULATION
FIGURE 10. BOOST TRANSIENT RESPONSE
CH1 = AVDD (VBOOST) (100mV/DIV)
CH2 = IO (BOOST) (100mA/DIV)
CH1 = VCTL (5V/DIV)
CH2 = COM (10V/DIV)
1ms/DIV
40µs/DI
FIGURE 11. BUCK TRANSIENT RESPONSE
FIGURE 12. VON SLICE OPERATION
8
FN6367.3
September 7, 2010
ISL97653A
Typical Performance Curves (Continued)
Ch1 = LXL (400ns/DIV)
Ch2 = ILXL (400ns/DIV)
Ch1 = LXL (400ns/DIV)
Ch2 = ILXL (400ns/DIV)
FIGURE 13. BOOST CURRENT LIMIT
FIGURE 14. BUCK CURRENT LIMIT
Pin Descriptions
PIN NUMBER
PIN NAME
1
PVIN2
2
CB
Logic buck boot strap pin. Generate the gate drive voltage for the N-Channel MOSFET by connecting
a 1µF cap to the switching node LXL1, 2.
3, 4
LXL1, LXL2
Logic buck switching node. Source of the high side internal power N-Channel MOSFET for the Buck.
5, 6
PGND3, PGND4
7
CM2
Buck compensation pin. An RC network is recommended. Increase R for better transient response at
the expense of stability.
8
FBL
Logic buck feedback pin. High impedance input to regulate at 1.215V.
9
VL
5.25V internal regulator output. Bypass with a 4.7µF capacitor. Ref voltage is generated from VL.
10
VREF
Reference voltage output. Bypass with a low valued capacitor for transients - recommend 220nF.
Should not be greater than 5 times CDEL capacitor to ensure correct start-up sequence.
11
FBN
Negative charge pump feedback pin. High impedance input to regulate to 0.203V.
12
SUPN
Negative charge pump supply voltage. Can be the same as or different from AVDD.
13
NOUT
Negative charge pump driver output.
14
PGND5
15
C1P
Charge pump capacitor 1, positive connection.
16
C1N
Charge pump capacitor 1, negative connection.
17
C2P
Charge pump capacitor 2, positive connection.
18
C2N
Charge pump capacitor 2, negative connection.
19
SUPP
20
FBP
21
POUT
VON charge pump output.
22
COM
High voltage switch control output. VON slice output.
23
DRN
Lower reference voltage for VON slice output. Usually connected to AVDD.
24
CTL
Input control pin for VON slice output.
9
DESCRIPTION
Logic buck supply voltage. This is also the analog supply from which the VL is generated. Needs at
least 1µF bypassing.
Logic buck ground pin.
Charge pump ground pin.
Positive charge pump supply. Can be the same as or different from AVDD.
Positive charge pump feedback pin. High impedance input to regulate at 1.215V
FN6367.3
September 7, 2010
ISL97653A
Pin Descriptions (Continued)
PIN NUMBER
PIN NAME
DESCRIPTION
25
CDEL
VON slice control delay input. Minimum 47nF. Recommend 220nF but is only limited by leakage in the
cap reaching µA levels.
26
EN
27
HVS
28
RSET
29
FBB
30
COMP
Boost compensation network pin. An RC network is recommended. Increase R for better transient
response at the expense of stability. R = 0 is recommended for 4.4A Boost requirements.
31
TEMP
Temperature sensor output voltage. An analog voltage from 0V to 3V for temperatures of -40°C to
+150°C.
32, 33
PGND1, PGND2
34, 35
LX1, LX2
36
PROT
Gate driver of the Input protection switch. Goes low when EN is high. Can be used to modulate the
passive input inrush current as shown by R21,R22, and C30 in the “Typical Application Diagram” on
page 5.
37
AGND
Analog ground. Separate from PGND’s and star under the chip.
38
PVIN1
Logic buck supply voltage.This is also the analog supply from which the VL is generated. Needs at least
1µF bypassing.
39
LDO-FB
40
LDO-CTL
10
Chip enable (active high). Can be driven to VIN levels.
High-voltage stress input select pin. High selects high voltage mode.
Voltage set pin for HVS test. RSET connects to ground in the high voltage mode - RSET high.
AVDD boost feedback pin. High impedance input to regulate at 1.215V.
Boost ground pins.
Boost switch output. Drain of the internal power NMOS for the Boost.
LDO controller feedback. High impedance input to regulate at 1.215V.
LDO control pin. Gate drive for the external PNP BJT.
FN6367.3
September 7, 2010
ISL97653A
Application Information
AVDD Boost Converter
The AVDD boost converter features a fully integrated 4.4A
boost FET. The regulator uses a current mode PI control
scheme which provides good line regulation and good
transient response. It can operate in both discontinuous
conduction mode (DCM) at light loads and continuous mode
(CCM). In continuous current mode, current flows
continuously in the inductor during the entire switching cycle
in steady state operation. The voltage conversion ratio in
continuous current mode is given by Equation 1:
V boost
1
------------------ = ------------1–D
V IN
Table 1 gives typical values (worst case margins are
considered 10%, 3%, 20%, 10% and 15% on VIN, VO, L,
FSW and IOMAX):
TABLE 1. MAXIMUM OUTPUT CURRENT CALCULATION
VIN
(V)
VO
(V)
L
(µH)
IOMAX
(mA)
5
9
6.8
2215
5
12
6.8
1673
5
15
6.8
1344
12
15
6.8
3254
12
18
6.8
2670
(EQ. 1)
Boost Converter Input Capacitor
where D is the duty cycle of the switching MOSFET.
The boost soft-start function is digitally controlled within a
fixed 10ms time frame during which the current limit is
increased in eight linear steps.
The boost converter uses a summing amplifier architecture
for voltage feedback, current feedback, and slope
compensation. A comparator looks at the peak inductor
current cycle by cycle and terminates the PWM cycle if the
current limit is triggered. Since this comparison is cycle
based, the PWM output will be released after the peak
current goes below the current limit threshold.
An external resistor divider is required to divide the output
voltage down to the nominal reference voltage. Current
drawn by the resistor network should be limited to maintain
the overall converter efficiency. The maximum value of the
resistor network is limited by the feedback input bias current
and the potential for noise being coupled into the feedback
pin. A resistor network in the order of 60k is recommended.
The boost converter output voltage is determined by
Equation 2:
R3 + R4
A VDD = ---------------------  V FBB
R4
(EQ. 2)
where R3 and R4 are in the “Typical Application Diagram” on
page 5. Unless otherwise stated, component variables
referred to in equations refer to the Typical Application
Diagram.
The current through the MOSFET is limited to 4.4A peak.
This restricts the maximum output current (average) based
on Equation 3:
I L
V IN
I OMAX =  I LMT – --------  --------

2
VO
(EQ. 3)
Where IL is peak to peak inductor ripple current, and is set
by Equation 4. fs is the switching frequency (680kHz).
V IN D
I L = ---------  ----L
fS
An input capacitor is used to suppress the voltage ripple
injected into the boost converter. A ceramic capacitor with
capacitance larger than 10µF is recommended. The voltage
rating of input capacitor should be larger than the maximum
input voltage. Some capacitors are recommended in Table 2
for input capacitor.
TABLE 2. BOOST CONVERTER INPUT CAPACITOR
RECOMMENDATION
CAPACITOR
SIZE
VENDOR
PART NUMBER
10µF/25V
1210
TDK
C3225X7R1E106M
10µF/25V
1210
Murata
GRM32DR61E106K
Boost Inductor
The boost inductor is a critical part which influences the
output voltage ripple, transient response, and efficiency.
Values of 3.3µH to 10µH are recommended to match the
internal slope compensation as well as to maintain a good
transient response performance. The inductor must be able
to handle the average and peak currents expressed in
Equations 5 and 6:
IO
I LAVG = ------------1–D
(EQ. 5)
I L
I LPK = I LAVG + -------2
(EQ. 6)
Some inductors are recommended in Table 3.
TABLE 3. BOOST INDUCTOR RECOMMENDATION
INDUCTOR
10µH/
5.1APEAK
5.9µH/
6APEAK
DIMENSIONS
(mm)
VENDOR
13x13x4.5
TDK
12.9X12.9X4 Sumida
PART NUMBER
RLF12545T-100M5R1
CDEP12D38NP-5R9MB-120
(EQ. 4)
11
FN6367.3
September 7, 2010
ISL97653A
Rectifier Diode (Boost Converter)
A high-speed diode is necessary due to the high switching
frequency. Schottky diodes are recommended because of
their fast recovery time and low forward voltage. The reverse
voltage rating of this diode should be higher than the
maximum output voltage. The rectifier diode must meet the
output current and peak inductor current requirements. The
following table lists two recommendations for boost
converter diode.
TABLE 4. BOOST CONVERTER RECTIFIER DIODE
RECOMMENDATION
DIODE
VR/IAVG
RATING
PACKAGE
FYD0504SA
50V/2A
DPAK
30WQ04FN
40V/3.5A
VENDOR
Fairchild
Semiconductor
DPAK
Stability can be examined by repeatedly changing the load
between 100mA and a max level that is likely to be used in
the system being used. The AVDD voltage should be
examined with an oscilloscope set to AC 100mV/DIV and the
amount of ringing observed when the load current changes.
Reduce excessive ringing by reducing the value of the
resistor in series with the CM1 pin capacitor.
Cascaded MOSFET Application
A 20V N-Channel MOSFET is integrated in the boost
regulator. For applications requiring output voltages greater
than 20V, an external cascaded MOSFET is needed as
shown in Figure 15. The voltage rating of the external
MOSFET should be greater than AVDD.
VIN
AVDD
International
Rectifier
LX1, LX2
Output Capacitor
Integrating output capacitors supply the load directly and
reduce the ripple voltage at the output. Output ripple voltage
consists of two components: the voltage drop due to the
inductor ripple current flowing through the ESR of output
capacitor, and the charging and discharging of the output
capacitor.
V O – V IN
IO
1
V RIPPLE = I LPK  ESR + ------------------------  ----------------  ---V
C
f
O
OUT
s
(EQ. 7)
For low ESR ceramic capacitors, the output ripple is
dominated by the charging and discharging of the output
capacitor. The voltage rating of the output capacitor should
be greater than the maximum output voltage.
Note: Capacitors have a voltage coefficient that makes their
effective capacitance drop as the voltage across them
increases. COUT in Equation 7 assumes the effective value
of the capacitor at a particular voltage and not the
manufacturer's stated value, measured at zero volts.
Table 5 shows some selections of output capacitors.
TABLE 5. BOOST OUTPUT CAPACITOR RECOMMENDATION
CAPACITOR
SIZE
VENDOR
PART NUMBER
10µF/25V
1210
TDK
C3225X7R1E106M
10µF/25V
1210
Murata
GRM32DR61E106K
PI Loop Compensation (Boost Converter)
The boost converter of ISL97653A can be compensated by
a RC network connected from COMP pin to ground.
C2 = 4.7nF and R2 = 0to 10. A RC network is used in the
demo board. A higher capacitor value can be used to
increase system stability.
12
INTERSIL
ISL97653A
FBB
FIGURE 15. CASCADED MOSFET TOPOLOGY FOR HIGH
OUTPUT VOLTAGE APPLICATIONS
VIN Protection
A series external P-FET can be used to prevent passive
power-up inrush current from the Boost output capacitors
charging to VIN - VSCHOTTKY via the boost inductor and
Schottky diode. This FET also adds protection in the event of
a short circuit on AVDD. The gate of the PFET (shown as M0
in the “Typical Application Diagram” on page 5) is controlled
by PROT. When EN is low, PROT is pulled internally to
PVIN1, thus M0 is switched off. When EN goes high, PROT
is pulled down slowly via a 50µA current source, switching
M0 on.
If the device is powered up with EN tied to high, M0 will
remain switched off until the voltage on VL exceeds the
VLOR threshold. Once the voltage on PROT falls below 0.6V
and the step-up regulator is within 90% of its target voltage,
PROT is pulled down to ground via a 1.3kimpedance. If
AVDD falls 10% below regulation, the drive to PROT reverts
to a 50µA current source. If a timed fault is detected, M0 is
actively switched off.
Several additional external components can optionally be
used to fine-tune the function of pin PROT (shown in the
dashed box near M0 in the application diagram). PROT
ramp rate can be controlled by adding a capacitor C30
between gate and source of M0. M0 gate voltage can be
FN6367.3
September 7, 2010
ISL97653A
limited during soft-start by adding a resistor (~75k)
between gate and source of M0. In addition, a resistor can
be connected between PROT and the gate of M0, in order to
limit the maximum VGS of M0 at all times.
Buck Converter
The buck converter is a step down converter supplying
power to the logic circuit of the LCD system. The ISL97653A
integrates a high voltage N-channel MOSFET to save costs
and reduce external component count. In the continuous
current mode, the relationship between input voltage and
output voltage as expressed in Equation 8:
V LOGIC
---------------------- = D
V IN
(EQ. 8)
Where D is the duty cycle of the switching MOSFET.
Because D is always less than 1, the output voltage of a
buck converter is lower than input voltage.
The peak current limit of buck converter is set to 2.5A, which
restricts the maximum output current (average) based on
Equation 9:
I OMAX = 2.5A – I P-P
(EQ. 9)
Where IP-P is the ripple current in the buck inductor as
shown in Equation 10:
V LOGIC
I pp = ----------------------   1 – D 
L  fs
(EQ. 10)
Where L is the buck inductor, fs is the switching frequency
(680kHz).
Feedback Resistors
TABLE 6. INPUT CAPACITOR (BUCK) RECOMMENDATION
CAPACITOR
SIZE
VENDOR
PART NUMBER
10µF/16V
1206
TDK
C3216X7R1C106M
10µF/10V
0805
Murata
GRM21BR61A106K
22µF/16V
1210
Murata
C3225X7R1C226M
Buck Inductor
A 3.3µH to 10µH inductor range is recommended for the
buck converter. Besides the inductance, the DC resistance
and the saturation current are also factors that need to be
considered when choosing a buck inductor. Low DC
resistance can help maintain high efficiency. Saturation
current rating should be higher than 2A. Here are some
recommendations for the buck inductor.
TABLE 7. BUCK INDUCTOR RECOMMENDATION
INDUCTOR
DIMENSIONS
(mm)
VENDOR
PART NUMBER
4.7µH/
2.7APEAK
5.7x5.0x4.7
Murata
LQH55DN4R7M01K
6.8µH/
3APEAK
7.3x6.8x3.2
TDK
RLF7030T-6R8M2R8
Rectifier Diode (Buck Converter)
A Schottky diode is recommended for fast recovery and low
forward voltage. The reverse voltage rating should be higher
than the maximum input voltage. The peak current rating is
2.5A, and the average current is given by Equation 13:
I avg =  1 – D *I o
The buck converter output voltage is determined by
Equation 11:
R 14 + R 13
V LOGIC = ---------------------------  V FBL
R 14
Where Io is the output current of the buck converter. Table 6
shows some recommendations for the input capacitor.
(EQ. 11)
(EQ. 13)
Where Io is the output current of buck converter. The
following table shows some diode recommended.
TABLE 8. BUCK RECTIFIER DIODE RECOMMENDATION
Where R13 and R14 are the feedback resistors in the buck
converter loop to set the output voltage. Current drawn by
the resistor network should be limited to maintain the overall
converter efficiency. The maximum value of the resistor
network is limited by the feedback input bias current and the
potential for noise being coupled into the feedback pin. A
resistor network in the order of 1k is recommended.
DIODE
VR/IAVG
RATING
PACKAGE
PMEG2020EJ
20V/2A
SOD323F
Philips
Semiconductors
SS22
20V/2A
SMB
Fairchild
Semiconductor
VENDOR
Buck Converter Input Capacitor
Input capacitance should support the maximum AC RMS
current which occurs at D = 0.5 and maximum output
current.
I acrms  C IN  =
D   1 – D   IO
(EQ. 12)
13
FN6367.3
September 7, 2010
ISL97653A
Output Capacitor (Buck Converter)
Positive Charge Pump Design Consideration
Four 10µF or two 22µF ceramic capacitors are recommended
for this part. The overshoot and undershoot will be reduced
with more capacitance, but the recovery time will be longer.
All positive charge pump diodes (D1, D2 and D3 shown in
the “NEGATIVE CHARGE PUMP BLOCK DIAGRAM” on
page 16) for x2 (doubler) and x3 (Tripler) modes of operation
are included in the ISL97653A. During the chip start-up
sequence the mode of operation is automatically detected
when the charge pump is enabled. With both C7 and C8
present, the x3 mode of operation is detected. With C7
present, C8 open and with C1+ shorted to C2+, the x2 mode
of operation will be detected.
TABLE 9. BUCK OUTPUT CAPACITOR RECOMMENDATION
CAPACITOR
SIZE
VENDOR
PART NUMBER
10µF/6.3V
0805
TDK
C2012X5R0J106M
10µF/6.3V
0805
Murata
GRM21BR60J106K
22µF/6.3V
1210
TDK
C3216X5R0J226M
100µF/6.3V
1206
Murata
GRM31CR60J107M
PI Loop Compensation (Buck Converter)
The buck converter of ISL97653A can be compensated by a
RC network connected from CM2 pin to ground. C8 = 4.7nF
and R20 = 10k RC network is used in the demo board. A
larger value resistor can lower the transient overshoot,
however, at the expense of stability of the loop.
Internal switches M1, M2 and M3 isolate POUT from SUPP
until the charge pump is enabled. This is important for TFT
applications that require the negative charge pump output
(VOFF) and AVDD supplies to be established prior to POUT.
The maximum POUT charge pump current can be estimated
from the following equations assuming a 50% switching
duty:
I MAX  2x   min of 40mA or
The stability can be optimized in a similar manner to that
described in “PI Loop Compensation (Boost Converter)” on
page 12.
2  V SUPP – 2  V DIODE  2  I MAX  – V  V ON 
--------------------------------------------------------------------------------------------------------------------------  0.95A
 2   2  R ONH + R ONL  
Bootstrap Capacitor (C13)
I MAX  3x   min of 40mA or
This capacitor provides the supply to the high driver circuitry
for the buck MOSFET. The bootstrap supply is formed by an
internal diode and capacitor combination. A 1µF is
recommended for ISL97653A. A low value capacitor can
lead to overcharging and in turn damage the part.
3V
· – 3  V DIODE  2  I MAX  – V  V ON 
SUP P
-------------------------------------------------------------------------------------------------------------------------  0.95V
 2   3  R ONH + 2  R ONL  
(EQ. 14)
Note: VDIODE (2 • IMAX) is the on-chip diode voltage as a
function of IMAX and VDIODE (40mA) < 0.7V.
During very light loads, the on-time of the low side diode
may be insufficient to replenish the bootstrap capacitor
voltage. Additionally, if VIN - VBUCK < 1.5V, the internal
MOSFET pull-up device may be unable to turn-on until
VLOGIC falls. Hence, there is a minimum load requirement in
this case. The minimum load can be adjusted by the
feedback resistors to FBL.
Charge Pump Controllers (VON and VOFF)
The ISL97653A includes 2 independent charge pumps (see
charge pump block and connection diagram). The negative
charge pump inverts the SUPN voltage and provides a
regulated negative output voltage. The positive charge pump
doubles or triples the SUPP voltage and provides a
regulated positive output voltage. The regulation of both the
negative and positive charge pumps is controlled by internal
comparators that sense the output voltage. These sensed
voltages are then compared to scaled internal reference
voltages.
Charge pumps use pulse width modulation to adjust the
pump period, depending on the load present. The pumps
can provide 100mA for VOFF and 40mA for VON.
14
FN6367.3
September 7, 2010
ISL97653A
EXTERNAL CONNECTIONS
AND COMPONENTS
SUPP
x2 MODE
x3 MODE
BOTH
M2
C1C7
M4
C1+
SUPP
M1
CONTROL
D3
D2
D1
680kHz
POUT
C14
0.9V
SUPP
C2+
ERROR
M3
C8
VREF
C2FB
C21
R8
M5
FBP
C22
R9
FIGURE 16. VON FUNCTION DIAGRAM
The maximum VOFF output voltage of a single stage charge
pump is:
In voltage doubler configuration, the maximum VON is as
given by the following equation:
V ON_MAX(2x) = 2   V SUPP – V DIODE  – 2  I OUT   2  R ONH + R ONL 
(EQ. 15)
V OFF_MAX  2x  = – V SUPP + V DIODE + 2  I OUT
  R ON  NOUT H + R ON  NOUT L 
For Voltage Tripler:
VON_MAX(3x) = 3   V SUPP – V DIODE  – 2  I OUT   3  R ONH + 2  RONL
(EQ. 16)
VON output voltage is determined by the following equation:
R 8

V ON = V FBP   1 + -------
R 9

(EQ. 17)
(EQ. 18)
R6 and R7 in the “Typical Application Diagram” on page 5
determine VOFF output voltage.
R7
R7
V OFF = V FBN   1 + -------- – V REF   --------
 R6

R6
(EQ. 19)
*Although in the given typical application diagram, SUPP and SUPN are
connected to AVDD, depending on a specific application, SUPN and/or SUPP
could be connected to either AVDD or VIN.
Negative Charge Pump Design Consideration
The negative charge pump consists of an internal switcher
M1, M2 which drives external steering diodes D2 and D3 via
a pump capacitor (C12) to generate the negative VOFF
supply. An internal comparator (A1) senses the feedback
voltage on FBN and turns on M1 for a period up to half a
CLK period to maintain V(FBN) in regulated operation at
0.2V. External feedback resistor R6 is referenced to VREF.
Faults on VOFF which cause VFBN to rise to more than 0.4V,
are detected by comparator (A2) and cause the fault
detection system to start the internal fault timer which will
cause the chip to power down if the fault persists.
15
FN6367.3
September 7, 2010
ISL97653A
VREF
A2
C19
100pF
SUPN
VDD
FAULT
0.4V
FBN
C20
820pF
R6
40k
A1
R7
328k
0.2V
1.2MHz
STOP
M2
CLK
NOUT
C12
220nF
D2
VOFF (-8V)
D3
PWM
CONTROL
EN
C13
470nF
M1
PGND
FIGURE 17. NEGATIVE CHARGE PUMP BLOCK DIAGRAM
VON Slice Circuit
VLOGIC2 LDO
The VON slice circuit functions as a three way multiplexer,
switching the voltage on COM between ground, DRN and
POUT, under control of the start-up sequence and the CTL pin.
An LDO controller is also integrated to provide a second
logic supply. The LDO-CTL pin drives the base of an
external transistor which should be sized for the current
required. A resistor divider is used to set the output voltage
by feeding back a reference voltage to LDO-FB. The internal
feedback reference is 1.215V.
During the start-up sequence, COM is pulled to ground via
an NDMOS FET with rDS(ON) of 260Ω. After the start-up
sequence has completed, CTL is enabled and acts as a
multiplexer control such that if CTL is low, COM connects to
DRN through a 30internal MOSFET, and if CTL is high,
COM connects to POUT internally via a 5MOSFET.
The slew rate of the switch control circuit is mainly restricted
by the load capacitance at COM pin and is given by
Equation 20:
Vg
V
-------- = -----------------------------------
t
 Ri RL   CL
(EQ. 20)
Where Vg is the supply voltage applied to DRN or voltage at
POUT, which range is from 0V to 30V. Ri is the resistance
between COM and DRN or POUT including the internal
MOSFET rDS(on), the trace resistance and the resistor
inserted, RL is the load resistance of VON slice circuit, and
CL is the load capacitance of switch control circuit.
In the Typical Application Circuit, R8, R9 and C22 give the
bias to DRN based on Equation 21:
V ON  R 9 +AVDD  R 8
V DRN = --------------------------------------------------------R9 + R
(EQ. 21)
8
And R10 can be adjusted to adjust the slew rate.
16
HVS Operation
When the HVS input is taken high, the ISL97653A enters
HVS test mode. In this mode, the output of AVDD is
increased by switching RSET to ground, and the AVDD is
set to:
R3 + Rx
A VDD = ---------------------  V FBB
Rx
(EQ. 22)
Where Rx is the value of R4 in parallel with R5. AVDD
voltage higher than the maximum rating of the boost
MOSFET may damage the part.
Fault Protection
The ISL97653A incorporates a number of fault protection
schemes. AVDD, VON, and VOFF are constantly monitored.
If fault conditions are detected for longer than 1ms on these
FB inputs, the device stops switching and the outputs are
disconnected. The ISL97653A also integrates over-temp
and over current protection.
Supply Sequencing
When the input voltage VIN is higher than 4V(UVLO), VREF,
VLOGIC, and VLOGIC2 are turned on. VLOGIC has a 9ms
fixed soft-start at start-up. AVDD, VON, and VOFF are
dependant on the EN pin.
FN6367.3
September 7, 2010
ISL97653A
When EN is taken high, voltage of pin PROT and VOFF start
ramping down. Once the PROT voltage falls below 0.9V,
AVDD starts up with a 9ms fixed soft-start time. Please note if
VOFF is to start earlier than AVDD, then the SUPN needs to
connect to VIN, and VIN voltage should be larger than VOFF
absolute value. The delay between VOFF and AVDD can be
controlled by C30 in the “Typical Application Diagram” on
page 5m and is given by Equation 23:
t DELAY =  V IN – 0.9V   C 30   50A 
(EQ. 23)
The successful completion of the AVDD soft-start cycle
triggers two simultaneous events. VON begins to ramp up
and the voltage on CDEL starts ramping up. When the
voltage reaches 1.215V, VON slice starts.
Fault Sequencing
The ISL97653A has advanced overall fault detection
systems including Overcurrent Protection (OCP) for both
boost and buck converters, Undervoltage Lockout Protection
(UVLP) and Over-Temperature Protection.
Once the peak current flowing through the switching
MOSFET of the boost and buck converters triggers the
current limit threshold, the PWM comparator will disable the
output, cycle by cycle, until the current is back to normal.
Layout Recommendation
The device's performance including efficiency, output noise,
transient response and control loop stability is dramatically
affected by the PCB layout. PCB layout is critical, especially
at high switching frequency.
There are some general guidelines for layout:
VIN
VREF
VLOGIC
EN
0.9V
PROT
AVDD
VON
VOFF
2.8V
CDEL
1.215V
VON Slice
* For demonstration only, not to scale
FIGURE 18.
Temperature Sensor
The ISL97653A also includes a temperature output for use
in system thermal management control. The integrated
sensor measures the die temperature over the -40°C to
+150°C range. Output is in the form of an analog voltage on
the TEMP pin in the range of 0V to 3V, which is proportional
to the sensed die temperature. Temperature accuracy is
±8.5°C over the -40°C to +150°C temperature range.
The device should be disabled by the user when the TEMP
pin output reaches 3V ( = +150°C die junction). Operation of
the device between +125°C and +150°C can be tolerated for
short periods, however in order to maximize the life of the IC,
it is recommended that the effective continuous operating
junction temperature of the die should not exceed +125°C.
1. Place the external power components (the input
capacitors, output capacitors, boost inductor and output
diodes, etc.) in close proximity to the device. Traces to
these components should be kept as short and wide as
possible to minimize parasitic inductance and resistance.
2. Place VREF and VL bypass capacitors close to the pins.
3. Reduce the loop with large AC amplitudes and fast slew
rate.
4. The feedback network should sense the output voltage
directly from the point of load, and be as far away from LX
node as possible.
5. The power ground (PGND) and signal ground (SGND)
pins should be connected at only one point.
6. The exposed die plate, on the underneath of the
package, should be soldered to an equivalent area of
metal on the PCB. This contact area should have multiple
via connections to the back of the PCB as well as
connections to intermediate PCB layers, if available, to
maximize thermal dissipation away from the IC.
7. To minimize the thermal resistance of the package when
soldered to a multi-layer PCB, the amount of copper track
and ground plane area connected to the exposed die
plate should be maximized and spread out as far as
possible from the IC. The bottom and top PCB areas
especially should be maximized to allow thermal
dissipation to the surrounding air.
8. Minimize feedback input track lengths to avoid switching
noise pick-up.
A demo board is available to illustrate the proper layout
implementation.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
17
FN6367.3
September 7, 2010
ISL97653A
Package Outline Drawing
L40.6x6
40 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
Rev 3, 10/06
4X 4.5
6.00
36X 0.50
A
B
6
PIN 1
INDEX AREA
6
PIN #1 INDEX AREA
40
31
30
1
6.00
4 . 10 ± 0 . 15
21
10
0.15
(4X)
11
20
TOP VIEW
0.10 M C A B
40X 0 . 4 ± 0 . 1
4 0 . 23 +0 . 07 / -0 . 05
BOTTOM VIEW
SEE DETAIL "X"
0.10 C
0 . 90 ± 0 . 1
(
C
BASE PLANE
( 5 . 8 TYP )
SEATING PLANE
0.08 C
SIDE VIEW
4 . 10 )
( 36X 0 . 5 )
C
0 . 2 REF
5
( 40X 0 . 23 )
0 . 00 MIN.
0 . 05 MAX.
( 40X 0 . 6 )
DETAIL "X"
TYPICAL RECOMMENDED LAND PATTERN
NOTES:
1. Dimensions are in millimeters.
Dimensions in ( ) for Reference Only.
2. Dimensioning and tolerancing conform to AMSE Y14.5m-1994.
3. Unless otherwise specified, tolerance : Decimal ± 0.05
4. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
5. Tiebar shown (if present) is a non-functional feature.
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 indentifier may be
either a mold or mark feature.
18
FN6367.3
September 7, 2010
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