PANASONIC DB2X41400L

Doc No. TT4-EA-12043
Revision. 3
Product Standards
Schottky Barrier Diode
DB2X41400L
DB2X41400L
Silicon epitaxial planar type
Unit: mm
For high frequency rectification
1.6
0.13
2
 Features
2.6
3.5
 Low forward voltage VF
 Forward current (Average) IF(AV) = 2 A rectification is possible
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
 Marking Symbol: 4P
1
0.55
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average) *1
Non-repetitive peak forward surge current
Junction temperature
Operating ambient temperature
Storage temperature
Note:
*2
VR
VRRM
IF(AV)
IFSM
Tj
Topr
Tstg
0.8
1. Cathode
2. Anode
Panasonic
JEITA
Code
Rating
Unit
40
40
2
15
125
-40 to +85
-55 to +125
V
V
A
A
°C
°C
°C
*1 For embedded alumina substrate
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Mini2-F4-B
SC-109D
SOD-123
Internal Connection
2
1
Page 1 of 4
Established : 2009-12-21
Revised
: 2013-04-26
Doc No. TT4-EA-12043
Revision. 3
Product Standards
Schottky Barrier Diode
DB2X41400L
 Electrical Characteristics Ta = 25 C  3 C
Parameter
Symbol
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
VF
IR
Ct
*1
trr
Conditions
Min
IF = 2A
VR = 40 V
VR = 10 V, f = 1 MHz
IF = IR = 100 mA, Irr = 10 mA
RL = 100 Ω
Typ
Max
Unit
0.42
0.49
200
70
V
μA
pF
30
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. *1 trr test circuit
Input Pulse
Bias Application Unit (N-50BU)
tp
tr
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
VR
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Output Pulse
t
IF
trr
90%
tp = 2 μs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100 Ω
t
Irr = 10 mA
Page 2 of 4
Established : 2009-12-21
Revised
: 2013-04-26
Doc No. TT4-EA-12043
Revision. 3
Product Standards
Schottky Barrier Diode
DB2X41400L
Technical Data ( reference )
IR - VR
IF - VF
1.E-01
Ta = 125 °C
1.E+00
Reverse current IR (A)
Forward current IF (A)
1.E+01
85 °C
1.E-01
1.E-02
25 °C
1.E-03
-40 °C
1.E-04
1.E-05
0.0
Ta = 125 °C
1.E-02
1.E-03
25 °C
1.E-04
1.E-05
1.E-06
-40 °C
1.E-07
1.E-08
0.1
0.2
0.3
0.4
0.5
0.6
0
10
Forward voltage VF (V)
300
Thermal resistance Rth (°C/W)
Terminal capacitance Ct (pF)
(2)
Ta = 25 °C
f = 1 MHz
250
200
150
100
50
15
20
25
30
Reverse voltage VR (V)
35
10
(3)
(1) Non-heat sink
(2) Mounted on glass epoxy print board.
(3) Mounted on alumina print board.
Board size : 50 mm × 50 mm x 0.8 mm
Solder in : 2 mm x 2 mm
1
0.001
40
(1)
Rth(j-l) = 30 °C/W
100
0
0.01
IF(AV) - Tl
0.1
1
10
Time t (s)
100
1000
PF(AV) - IF(AV)
1.5
tp/T
2
IF
Forward power dissipation (Average) PF(AV) (W)
2.5
Forward current (Average) IF(AV) (A)
40
1000
350
10
30
Rth - t
Ct - VR
5
20
Reverse voltage VR (V)
400
0
85 °C
tp
T
DC
1/2
VR = 20 V
Tj = 125 °C
1.5
1
1/4
Sine Wave
0.5
0
IF
tp
T
1
Sine Wave
DC
1/2
1/4
0.5
0
0
25
50
75
100
125
Lead temperature Tl (°C)
150
175
0
0.5
1
1.5
2
2.5
Forward current (Average) IF(AV) (A)
Page 3 of 4
Established : 2009-12-21
Revised
: 2013-04-26
Doc No. TT4-EA-12043
Revision. 3
Product Standards
Schottky Barrier Diode
DB2X41400L
Mini2-F4-B
Unit: mm
1.6±0.1
+0.05
0.13-0.02
(7°)
3.5±0.1
2.6±0.1
2
0.45±0.10
1
0 to 0.1
(7°)
0 to 0.3
0.80±0.05
0.55±0.10
 Land Pattern (Reference) (Unit: mm)
0.8
3.1
0.8
1.1
Page 4 of 4
Established : 2009-12-21
Revised
: 2013-04-26
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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