This product complies with the RoHS Directive (EU 2002/95/EC). DMT9FK01 Silicon epitaxial planar type (Diode) Silicon PNP epitaxial planar type (Tr) For high speed switching circuits For digital circuits Features Package Two elements incorporated into one package (SBD + Tr) Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package DRAQA44E + DB2S311 (Individual) Code SSMini5-F4-B Pin Name 1: Anode 2: Base 3: Emitter Packaging Marking Symbol: X2 Basic Part Number Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard) Internal Connection (K) 5 Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VR 30 V Repetitive peak reverse voltage VRRM 30 V Forward current (Average) IF(AV) 200 mA Peak forward current IFM 300 mA Non-repetitive peak forward surge current * IFSM 1 A Collector-base voltage (Emitter open) VCBO –50 V Collector-emitter voltage (Base open) VCEO –50 V Collector current IC –100 mA Total power dissipation * PT 125 mW Tj 125 °C Tstg –55 to +150 °C Reverse voltage Diode Tr Overall Junction temperature Storage temperature 4: Collector 5: Cathode (C) 4 Di R1 Tr R2 1 (A) Resistance value 2 (B) 3 (E) R1 R2 47 47 kΩ kΩ Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current) Publication date: September 2010 Ver. AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). DMT9FK01 Electrical Characteristics Ta = 25°C±3°C Diode Parameter Symbol Forward voltage Conditions Min Typ Max Unit V VF IF = 200 mA 0.56 IR1 VR = 10 V 0.5 IR2 VR = 30 V 5 Terminal capacitance Ct VR = 10 V, f = 1 MHz 6.0 pF Reverse recovery time * trr IF = IR = 100 mA, Irr = 10 mA, RL = 100 Ω 2.2 ns Reverse current µA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz *: trr measurement circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω VR t IF trr 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω Output Pulse IF = 100 mA IR = 100 mA RL = 100 Ω t Irr = 10 mA Tr Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –50 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V Collector-base cutoff current (Emitter open) ICBO VCB = –50 V, IE = 0 – 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = –50 V, IB = 0 – 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = –6 V, IC = 0 – 0.1 mA Forward current transfer ratio hFE VCE = –10 V, IC = –5 mA Collector-emitter saturation voltage VCE(sat) IC = –10 mA, IB = – 0.5 mA Input voltage (ON) VI(on) VCE = – 0.2 V, IC = –5 mA Input voltage (OFF) VI(off) VCE = –5 V, IC = –100 µA 80 – 0.25 –3.6 V V – 0.8 V Input resistance R1 –30% 47 +30% kΩ Resistance ratio R1 / R2 0.8 1.0 1.2 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2 Ver. AED This product complies with the RoHS Directive (EU 2002/95/EC). DMT9FK01 Common characteristics chart DMT9FK01_PT-Ta PT Ta Total power dissipation PT (mW) 200 150 100 50 0 0 40 80 120 160 200 Ambient temperature Ta (°C) CharacteristicsDMT9FK01(Di)_ charts of DiodeI -V F F IF VF DMT9FK01(Di)_ IR-VR 1 Ct VR 10−3 35 Ta = 125°C 85°C 10−5 Reverse current IR (A) Forward current IF (A) Ta = 125°C 10−2 10−6 85°C 10−3 10−8 −30°C 10−4 25°C 10−7 25°C 10−9 0 0.1 0.2 0.3 0.4 0.5 0.6 Forward voltage VF (V) 0.7 10−10 10 20 Reverse voltage VR (V) Ver. AED 25 20 15 10 5 −30°C 0 Ta = 25°C 30 Terminal capacitance Ct (pF) 10−4 10−1 10−5 DMT9FK01(Di)_Ct-VR IR VR 30 0 0 10 20 30 Reverse voltage VR (V) 3 This product complies with the RoHS Directive (EU 2002/95/EC). DMT9FK01 Characteristics charts of Tr DMT9FK01(Tr)_IC-VCE DMT9FK01(Tr)_hFE-IC −120 IB = −800 µA −700 µA −600 µA Collector current IC (mA) −100 −500 µA −80 −400 µA −300 µA −60 −200 µA −40 −100 µA −20 0 0 −2 −4 −6 −8 −10 Forward current transfer ratio hFE 300 Ta = 25°C Ta = 85°C 250 25°C 200 −30°C 150 50 −1 VIN IO VO = − 0.2 V 25°C −30°C 0 − 0.5 −1.0 −1.5 Input voltage VIN (V) 4 Input voltage VIN (V) Output current IO (mA) Ta = 85°C −2.0 −10 Ta = −30°C 25°C 85°C −1 −10−1 −10−1 −1 −10 Output current IO (mA) Ver. AED IC / IB = 20 −1 −10−2 −10−1 Ta = 85°C 25°C −30°C −1 −10 Collector current IC (mA) −102 −10−2 −10−3 −102 DMT9FK01(Tr)_VIN-IO IO VIN −10−1 −10 Collector current IC (mA) DMT9FK01(Tr)_IO-VIN VO = −5 V −10 −10−1 100 0 −10−1 −12 VCE(sat) IC VCE = −10 V Collector-emitter voltage VCE (V) −1 DMT9FK01(Tr)_VCEsat-IC hFE IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE −102 −102 This product complies with the RoHS Directive (EU 2002/95/EC). DMT9FK01 SSMini5-F4-B Unit: mm 0.20 ±0.05 1.60 ±0.05 +0.05 0.20 −0.02 (5°) 1.60 ±0.05 4 1.20 ±0.05 5 1 2 3 (0.5) (0.5) +0.05 0.13 −0.02 (0.27) 1.00 ±0.05 0 to 0.05 0.55 ±0.05 (5°) Ver. AED 5 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202