VS-120NQ045PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 120 A FEATURES Lug terminal anode • 150 °C TJ operation • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability Base cathode HALF-PAK (D-67) • Designed and qualified for industrial level • UL approved file E222165 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY DESCRIPTION IF(AV) 120 A VR 45 V Package HALF-PAK (D-67) Circuit Single diode The VS-120NQ.. high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform VRRM IFSM tp = 5 μs sine VF 120 Apk, TJ = 125 °C TJ Range VALUES UNITS 120 A 45 V 26 000 A 0.62 V -55 to +150 °C VS-120NQ045PbF UNITS 45 V VOLTAGE RATINGS SYMBOL PARAMETER VR Maximum DC reverse voltage VRWM Maximum working peak reverse voltage ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 13 A, L = 1 mH 81 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 13 A Repetitive avalanche current 50 % duty cycle at TC = 105 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 120 26 000 A 1550 Revision: 19-Mar-15 Document Number: 94458 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-120NQ045PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS 120 A Maximum forward voltage drop See fig. 1 VFM (1) 120 A IRM (1) 0.86 TJ = 25 °C 0.81 10 VR = Rated VR CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance LS From top of terminal hole to mounting plane dV/dt mA 500 Maximum junction capacitance Maximum voltage rate of change V 0.62 TJ = 125 °C TJ = 125 °C UNITS 0.63 TJ = 25 °C 240 A 240 A Maximum reverse leakage current See fig. 2 VALUES 5200 pF 7.0 nH 10 000 V/μs VALUES UNITS -55 to 150 °C Rated VR Note (1) Pulse width < 500 μs THERMAL - MECHANICAL SPECIFICATIONS SYMBOL PARAMETER Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased Approximate weight maximum 30 g 1.06 oz. N·m (lbf in) 3.4 (30) 5 (44.2) maximum HALF-PAK module Case style 10 000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) °C/W 4 (35.4) Non-lubricated threads minimum Terminal torque 0.05 3 (26.5) minimum Mounting torque 0.38 100 TJ = 150 °C 10 TJ = 125 °C TJ = 150 °C 1000 TJ = 125 °C 100 TJ = 100 °C 10 TJ = 75 °C 1 TJ = 50 °C 0.1 TJ = 25 °C TJ = 25 °C 1 0.01 0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 35 40 45 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 19-Mar-15 Document Number: 94458 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-120NQ045PbF www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 0 10 20 30 40 50 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 0.1 0.01 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.001 0.00001 0.0001 0.001 0.01 0.1 10 1 t1 - Rectangular Pulse Duration (s) 160 140 140 120 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics DC 120 100 Square wave (D = 0.50) 80 % rated VR applied 80 60 40 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 100 80 60 RMS limit 40 DC 20 See note (1) 0 20 0 50 100 150 200 250 0 20 40 60 80 100 120 140 160 180 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 19-Mar-15 Document Number: 94458 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-120NQ045PbF IFSM - Non-Repetitive Surge Current (A) www.vishay.com Vishay Semiconductors 100 000 At any rated load condition and with rated VRRM applied following surge 10 000 1000 10 1000 100 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR ORDERING INFORMATION TABLE Device code VS- 12 0 N Q 1 2 3 4 5 045 PbF 6 1 - Vishay Semiconductors product 2 - Average current rating (x 10) 3 - Product silicon identification 4 - N = Not isolated 5 - Q = Schottky rectifier diode 6 - Voltage rating (045 = 45 V) 7 - Lead (Pb)-free 7 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95020 Revision: 19-Mar-15 Document Number: 94458 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D-67 HALF-PAK DIMENSIONS in millimeters (inches) 24.4 (0.96) 13 (0.51) 17.5 (0.69) 16.5 (0.65) 5 (0.20) 4 (0.16) 30 ± 0.05 (1.2 ± 0.002) 5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039) 21 (0.82) 20 (0.78) Ø 4.3 (Ø 0.169 - 0.1 0.0 - 0.004 ) 0.000 ¼" - 20 UNC 40 MAX. (1.58) Document Number: 95020 Revision: 20-May-09 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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