VS-180NQ045PbF Datasheet

VS-180NQ045PbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 180 A
FEATURES
• 150 °C TJ operation
Lug terminal
anode
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and
long term reliability
• Designed and qualified for industrial level
Base
cathode
HALF-PAK (D-67)
• UL approved file E222165
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
PRODUCT SUMMARY
IF(AV)
180 A
VR
45 V
Package
HALF-PAK (D-67)
Circuit
Single diode
The VS-180NQ.. high current Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
180 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
180
A
45
V
27 000
A
0.63
V
-55 to 150
°C
VS-180NQ045PbF
UNITS
45
V
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
180
A
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 22 A, L = 1 mH
243
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
36
A
Repetitive avalanche current
50 % duty cycle at TC = 105 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
27 000
A
2400
Revision: 19-Mar-15
Document Number: 94148
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-180NQ045PbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
180 A
Maximum forward voltage drop
See fig. 1
VFM (1)
180 A
IRM
Maximum junction capacitance
CT
Typical series inductance
LS
Maximum voltage rate of change
dV/dt
0.83
0.89
15
VR = Rated VR
TJ = 125 °C
V
0.63
TJ = 125 °C
TJ = 25 °C
UNITS
0.60
TJ = 25 °C
360 A
360 A
Maximum reverse leakage current
See fig. 2
VALUES
mA
600
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
7700
From top of terminal hole to mounting plane
pF
6.0
nH
10 000
V/μs
VALUES
UNITS
-55 to 150
°C
Rated VR
Note
(1) Pulse width = 500 μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance, 
junction to case
RthJC
DC operation
See fig. 4
0.28
Typical thermal resistance, 
case to heatsink
RthCS
Mounting surface, smooth and greased
0.05
°C/W
Approximate weight
minimum
Mounting torque
1.06
oz.
4 (35.4)
Non-lubricated threads
minimum
N m
(lbf in)
3.4 (30)
maximum
5 (44.2)
Case style
HALF-PAK module
10 000
1000
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
g
3 (26.5)
maximum
Terminal torque
30
100
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
1
TJ = 150 °C
1000
TJ = 125 °C
100
TJ = 100 °C
10
TJ = 75 °C
TJ = 50 °C
1
TJ = 25 °C
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0
5
10
15
20
25
30
35
40
45
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 19-Mar-15
Document Number: 94148
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-180NQ045PbF
www.vishay.com
Vishay Semiconductors
CT - Junction Capacitance (pF)
10 000
TJ = 25 °C
1000
0
10
20
30
40
50
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
1
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
160
200
150
180
Average Power Loss (W)
Allowable Case Temperature (°C)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
140
DC
130
120
Square wave (D = 0.50)
80 % rated VR applied
110
100
90
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
160
140
120
100
80
60
RMS limit
40
20
See note (1)
DC
0
80
0
50
100
150
200
250
0
20
40
60
80
100
120
140
160
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 19-Mar-15
Document Number: 94148
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-180NQ045PbF
www.vishay.com
IFSM - Non-Repetitive Surge Current (A)
Vishay Semiconductors
100 000
At any rated load condition
and with rated VRRM applied
following surge
10 000
1000
100
10
10 000
1000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Current
monitor
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
ORDERING INFORMATION TABLE
Device code
VS-
18
0
N
Q
1
2
3
4
5
045 PbF
6
1
-
Vishay Semiconductors product
2
-
Average current rating (x 10)
3
-
Product silicon identification
4
-
N = Not isolated
5
-
Q = Schottky rectifier diode
6
-
Voltage rating (045 = 45 V)
7
-
Lead (Pb)-free
7
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95020
Revision: 19-Mar-15
Document Number: 94148
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
D-67 HALF-PAK
DIMENSIONS in millimeters (inches)
24.4 (0.96)
13 (0.51)
17.5 (0.69)
16.5 (0.65)
5 (0.20)
4 (0.16)
30 ± 0.05
(1.2 ± 0.002)
5 (0.196) + 45°
Ø 7.3 ± 0.1 (0.29 ± 0.0039)
21 (0.82)
20 (0.78)
Ø 4.3
(Ø 0.169
- 0.1
0.0
- 0.004
)
0.000
¼" - 20 UNC
40 MAX. (1.58)
Document Number: 95020
Revision: 20-May-09
For technical questions, contact: [email protected]
www.vishay.com
1
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Revision: 02-Oct-12
1
Document Number: 91000