AN11225 Demonstration of a 1GHz discrete VCO based on the BFR92A Rev. 1.0 — 26 June 2012 Application note Document information Info Content Keywords Discrete, VCO, BFR92A, EVB, Design, Evaluation, Measurements Abstract This document provides an example of a discrete Voltage Controlled Oscillator based on the BFR92A NPN wideband transistor. The device is oscillating on 1GHz and has a tuning range of about 100MHz. The VCO is implemented on an NXP VCO evaluation board which can be used to evaluate multiple oscillator types and configurations. AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A Revision history Rev Date Description 1.0 Initial version 20120626 Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] AN11225 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 2 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A 1. Introduction The VCO demonstrated by this application note is a low-power single transistor commoncollector Colpitts VCO with a center frequency of 1GHz and a tuning range of 100MHz. A VCO evaluation board is designed which can be used for evaluation of other VCO devices as well. The VCO evaluation board can be used to evaluate the performance of different types of discrete LC-tank VCOs. Special attention is paid to the circuit’s flexibility. The board allows the VCO to be configured either as a Colpitts oscillator or as a Clapp oscillator. Frequency tuning possibility is obtained using a varicap diode, which may be a device in a SOT323 (SC-76) package or in a SOT523 (SC-79) package. Furthermore, the board can be configured with or without an output buffer and BJT devices in both SOT23 package as well as in SOT323 package can be mounted. Also, an external bias pin is available to be able to tweak the DC bias setting of the oscillator’s active device somewhat. The output of the oscillator can either be taken directly from the emitter or collector of T1 or from the emitter of the buffer stage, both ways providing enough positions for filter and impedance matching components. Even though not strictly required, all three connectors are SMA type connectors, allowing for coaxial cables to be used for the DC inputs as well, in order to reduce ambient noise coupling. Additionally, bias-T positions are available at the DC inputs for noise filtering and RF-DC isolation. Fig 1. AN11225 Application note VCO evaluation board with NXP’s BFR92A NPN wideband transistor All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 3 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A 2. General board schematic Fig 2. Schematic of VCO EVB 3. Board layout Fig 3. AN11225 Application note Board layout All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 4 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A Fig 4. Board layout with components 4. PCB stack The material that has been used for the EVB is FR4 using the stack shown in Fig 5. Fig 5. AN11225 Application note PCB stack All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 5 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A 5. Example board configurations 5.1 Configuration 1 - Colpitts emitter out (1) Simple output coupling through capacitor Fig 6. Colpitts emitter out 5.2 Configuration 2 – Colpitts Collector out (1) Output coupling with LC-filter positions for harmonic suppression Fig 7. AN11225 Application note Colpitts collector out All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 6 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A 5.3 Configuration 3 – Colpitts emitter out with buffer stage (1) Coupling from emitter of sustaining stage to base of buffer stage Fig 8. Colpitts emitter out with buffer stage 5.4 Configuration 4- Clapp emitter out with buffer stage (1) Coupling from emitter of sustaining stage to base of buffer stage Fig 9. AN11225 Application note Gouriet-Clapp emitter out with buffer stage All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 7 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A Table 1. Example of mounted components and functions Mounted component types: C=capacitor, L=inductor, R=resistor, T=transistor, VC=varicap diode, NM= not mounted ID Configuration 1 Configuration 2 Configuration 3 Configuration 4 Type Function Type Function Type Function Type Function C1 C Decoupling C Decoupling C Decoupling C Decoupling C2 C Decoupling C Decoupling C Decoupling C Decoupling C3 C Varactor scaling C Varactor scaling C Varactor scaling C Varactor scaling C4 C Varactor scaling C Varactor scaling C Varactor scaling C Varactor scaling C5 C DC block C DC block C DC block R Short C6 C Decoupling NM Open C Decoupling C Decoupling C7 C Feedback C Feedback C Feedback C Feedback C8 C Feedback C Feedback C Feedback C Feedback C9 C Decoupling C Decoupling C Decoupling C Decoupling C10 C Decoupling NM Open C Decoupling C Decoupling C11 C Output coupling C Output coupling C Output coupling C Output coupling L1 R Short L DC feed R Short R Short L2 L DC feed L DC feed L DC feed L DC feed L3 L Tank inductance L Tank inductance L Tank inductance L Tank inductance L4 R Short R Short R Short R Short L5 R Short R Short R Short R Short L6 L RF block L RF block L RF block L RF block L7 NM Open NM Open R Short R Short R1 R Transistor bias R Transistor bias R Transistor bias R Transistor bias R2 R Transistor bias R Transistor bias R Transistor bias R Transistor bias R3 R Bias tweak R Bias tweak R Bias tweak R Bias tweak R4 R Transistor bias R Transistor bias R Transistor bias R Transistor bias PH1 R Short R Short R Short NM Open PH2 R Short R Short R Short NM Open PH3 NM Open NM Open NM Open R Short PH4 R Short R Short R Short NM Open PH5 L Low-pass filter NM Open C DC block/coupling C DC block/coupling PH6 NM Open R Short R Short R Short PH7 NM Open L Low-pass filter R Transistor bias R Transistor bias PH8 C Low-pass filter C Low-pass filter R Transistor bias R Transistor bias PH9 R Short R Short NM Open NM Open PH10 R Short R Short NM Open NM Open PH11 NM Open NM Open R Transistor bias R Transistor bias T1 T Sustaining stage T Sustaining stage T Sustaining stage T Sustaining stage T2 NM Open NM Open T Buffer stage T Buffer stage VC1 VC Frequency tuning VC Frequency tuning VC Frequency tuning VC Frequency tuning AN11225 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 8 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A 6. Design and evaluation 6.1 Design recommendations A higher C/L ratio of the tank results in a higher loaded quality factor and consequently to better phase noise, load pulling and supply pushing performance. Use a high unloaded quality factor resonator inductor (L3) such as a wire-wound-type inductor. The loop gain can be controlled by for example changing the C7/C8 ratio. Smaller ratios result in higher loop gain. Make sure that the loop gain is well above the critical loop gain to compensate for component spread and temperature variation. Take into account though that a too high loop gain results in bad harmonic performance. Use C3 to scale down the capacitance tuning range and use C4 to increase the tank capacitance to center the frequency of oscillation in the desired range. Mounting of capacitor C3 is always required for it serves as a DC blocking capacitor as well. If scaling of the capacitance tuning range is not required, choose C3>>CVC1. Generally the system has sufficient loop gain if the oscillator starts oscillating for supply voltages well below the nominal operating voltage. Be aware that the more power is fed back to the resonator the less power is available for the load, and vice versa. Use a high reactance inductor (L6) in series with the emitter resistor to limit the RF power dissipated in the emitter resistor. Higher output power generally results in better phase noise performance. To increase the output power one might increase the collector current. Be aware that this action also increases the flicker corner frequency which increases the 1/f noise contribution to phase noise. An optimum collector current for best phase noise performance might be found by using the bias tweaking pin. A high reactance output coupling capacitor (C11) results in better load pulling performance but might also decrease the output power. A low reactance output coupling capacitor (C11) generally enhances the harmonics. Notice that capacitive output coupling already behaves like a high-pass filter. Use an LC-type filter at the oscillator’s output for better harmonic performance. Make sure that the tank’s voltage swing does not exceed a value for which the varicap diode will enter forward conduction mode. Investigate the contribution of the varicap diode to the phase noise performance by replacing the device with a fixed capacitor. Use an amplifier with high gain, a low flicker corner frequency and low noise-figure. A too high transition frequency of the amplifier might result in spurious oscillations and degraded performance. Choose the transition frequency about 5 times the maximum frequency of oscillation. This board is designed for evaluation purposes and is designed for flexibility, not for optimal performance. Design a smaller dedicated VCO board for best performance. Board characteristics strongly influence the oscillator characteristics. Make sure to characterize the board for simulation by for example EM-simulation of the board. AN11225 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 9 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A 6.2 Using the bias tweaking pin The bias tweaking pin can be used to tweak the collector current by varying the base voltage. Use a high impedance resistor (R3), for example 50K. Decouple the supply line using a capacitor (C9), for example 47nF. Change the bias tweaking pin voltage in the positive and negative direction to tweak the current in both directions. Make sure that the power dissipated by R3 stays well below 60mW. For larger collector current sweeping, remove resistors R1 and R2 and replace R3 by a high reactance inductor, for example 100nH. Make sure that the transistor’s junction voltages stay below the maximum ratings. Set the transistor using the R1-R2 voltage divider in the DC operating point found by optimization. Notice that the frequency of oscillation might shift for different DC operating points. Change the tank components after optimization accordingly. 7. BFR92A 10mA VCO implementation 7.1 BFR92A model The used model for the BFR92A is a Mextram 504 model of the BFR92A die and is expanded with the parasitic capacitances and inductances of the package as shown in Fig 10. Fig 10. Mextram 504 model of BFR92A die expanded with package characteristics AN11225 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 10 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A 7.2 PCB characterization The VCO EVB layout was characterized by performing a 2D EM simulation with the Momentum RF simulator of Agilent Advanced Design System (ADS 2009). A layout-looka-like symbol was created from the resulting S-parameter file allowing for co-simulation of the board. The components were connected to the simulation component of the PCB and the values are those shown in chapter 8. The zero ohm resistors are modeled as 150pH inductors with 5mOhm series resistance (estimation) for a better approximation to the reality. Fig 11. Layout-look-a-like co-simulation component 7.3 Simulation of oscillation frequency By inserting the ADS OscTest component into the feedback path of the oscillator the small-signal loop can be calculated and plotted as shown in Fig 12 and Fig 13. The OscTest component is connected in series with the transistor’s emitter with the arrow pointed away from the emitter. The default settings of OscTest are used and the frequency is swept from 1MHz to 5GHz. Notice that the small-signal loop gain is plotted. Steady-state oscillations occur when the active device is limiting the output amplitude and the device is then operating in non-linear mode. The characteristics of the active device will change somewhat and the frequency of oscillation will be a little lower than according to the small-signal loop gain prediction. AN11225 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 11 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A Fig 12. Polar plot of small-signal loop gain at VTUNE = 5V Fig 13. Polar plot of small-signal loop gain at VTUNE = 0V AN11225 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 12 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A 8. Bill of materials Table 2. Bill of materials Designator Description Package Value Supplier name / type Comment C1 Ceramic chip capacitor 0402 47nF Murata / GRM15 Decoupling C2 Ceramic chip capacitor 0402 47nF Murata / GRM15 Decoupling C3 Ceramic chip capacitor 0402 4.3pF Murata / GRM15 Varactor scaling C4 Ceramic chip capacitor 0402 0.6pF Murata / GRM15 Varactor scaling C5 Ceramic chip capacitor 0402 100pF Murata / GRM15 DC block C6 Ceramic chip capacitor 0402 47pF Murata / GRM15 Decoupling C7 Ceramic chip capacitor 0402 1pF Murata / GRM15 Feedback C8 Ceramic chip capacitor 0402 3pF Murata / GRM15 Feedback C9 Not mounted - - Not mounted C10 Ceramic chip capacitor 0402 47pF Murata / GRM15 Decoupling C11 Ceramic chip capacitor 0402 33pF Murata / GRM15 Output coupling L1 Zero Ohm resistor 0402 0Ω Yageo Short L2 Multi-layer inductor 0402 100nH Murata / LQG15 Bias-T L3 Wire-wound inductor 0402 2.4nH Murata / LQW15 Tank inductor L4 Zero Ohm resistor 0402 0Ω Yageo Short L5 Zero Ohm resistor 0402 0Ω Yageo Short L6 Zero Ohm resistor 0402 0Ω Yageo Short L7 Zero Ohm resistor 0402 0Ω Yageo Short R1 Film resistor 0402 1K5 Yageo Biasing network R2 Film resistor 0402 2K7 Yageo Biasing network R3 Not mounted - - - Not mounted R4 Film resistor 0402 220 Yageo Biasing network PH1 Zero Ohm resistor 0402 0Ω Yageo Short PH2 Zero Ohm resistor 0402 0Ω Yageo Short PH3 Not mounted - - - Not mounted PH4 Zero Ohm resistor 0402 0Ω Yageo Short PH5 Zero Ohm resistor 0402 0Ω Yageo Short PH6 Not mounted - - - Not mounted PH7 Not mounted - - - Not mounted PH8 Not mounted - - - Not mounted PH9 Zero Ohm resistor 0402 0Ω Yageo Short PH10 Zero Ohm resistor 0402 0Ω Yageo Short PH11 Not mounted - - - Not mounted T1 NPN BJT 0402 NXP Semiconductors / BFR92A Sustaining stage T2 Not mounted - - Not mounted VC1 Varicap diode 0402 NXP Semiconductors / BB145 Tuning BIAS header Bias tweaking - - Bias tweaking Vcc, Vtune, RFout SMA RF connector Johnson / 142-0701-841 VCO ports AN11225 Application note - - All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 13 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A 9. Measurements 9.1 Required equipment In order to measure the evaluation board the following equipment is required: DC Power Supply Unit for VCC capable of sourcing 30mA at 5V DC Power Supply Unit for VTUNE capable of sourcing 500nA at 5V If possible both DC PSUs are battery power supplies to minimize the contribution of supply noise/ripple to the phase noise performance Digital Multimeter for supply current measurement and supply voltage verification (optional) RF Spectrum Analyzer covering the frequency range up to about 9GHz RF SSB Phase Noise Analyzer for phase noise measurement with a sensitivity of at least -150dBc at 1MHz offset Proper RF cables A banana-plugs-to-BNC-connector can be used when the power supply has banana plug outputs 9.2 Connections and setup 9.2.1 Current measurements 1. Set the DMM in DC current measuring mode and connect the meter in series with the DC power supply for VCC. 2. Set the DC power supply to 5V and verify this voltage using a DMM 3. Connect the output of the DMM and the ground terminal to a shielded RF cable with an SMA-connector to connect it to the VCO’s VCC port 4. Connect the VTUNE PSU with a shielded RF cable with an SMA-connector to the VCO’s VTUNE port 5. Connect the VCO’s RFOUT port to a 50Ohm load 6. Turn on both DC power supplies and sweep the VTUNE voltage while noting the measured currents 9.2.2 Frequency and power measurements 1. Connect both the VCC and the VTUNE port to the power supply (preferably a battery supply) with short shielded cables 2. Connect the RFOUT port to the spectrum analyzer using the shortest possible connector 3. Verify the voltages for the VCC and VTUNE using a DMM, then disconnect the DMM and turn on both DC power supplies 4. Use the marker function of the spectrum analyzer to measure the frequencies and corresponding powers. Make sure to measure with the narrowest bandwidth as possible for most accurate results 5. Setting the spectrum analyzer in averaging mode makes readout more easy and accurate 6. Perform frequency and power measurements for multiple values of VTUNE and make sure to verify this tuning voltage every time it is changed AN11225 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 14 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A 7. Pushing measurements can be performed by varying the VCC voltage by for example 0.5V in both directions from the nominal supply voltage while measuring the frequency deviation 9.2.3 Phase noise measurements 1. Connect both the VCC and the VTUNE port to the power supply (a battery supply is required for a valid phase noise measurement) with short shielded cables 2. Connect the RFOUT port to the phase noise analyzer using the shortest possible connector 3. Some phase noise analyzers switch the load at the start of the measurement causing the oscillators frequency to be pulled somewhat and consequently the analyzer will not be able to capture the carrier. In this case it would help to connect for example a 10dB attenuator in between RFOUT and the RF input of the spectrum analyzer to provide some isolation 4. Set the measurement range of the phase noise analyzer to run from 1KHz to 1MHz 5. For most accurate results, make sure to perform a highly correlated measurement and preferably also to average multiple curves 10. Typical results Table 3. Typical results VTUNE ICC POUT F1 [V] [mA] [dBm] [MHz] PF2 [dBc] PF3 [dBc] PF4 [dBc] Phase noise @ 1MHz Pushing [dBc/Hz] [MHz/V] 0.0 11.69 1.51 950.78 -10.2 -24.55 -35.47 -127.25 1.79 0.5 11.73 1.45 966.90 -10.1 -24.96 -34.72 -127.49 1.40 1.0 11.75 1.39 980.34 -10.1 -25.39 -33.02 -127.55 1.02 1.5 11.77 1.35 992.17 -9.97 -25.76 -31.35 -127.20 0.563 2.0 11.79 1.31 1003.1 -9.81 -26.19 -30.11 -127.48 0.236 2.5 11.82 1.26 1012.8 -9.65 -26.42 -29.43 -127.71 0.324 3.0 11.84 1.19 1022.6 -9.48 -26.60 -28.93 -127.68 0.770 3.5 11.85 1.12 1032.2 -9.44 -26.80 -28.72 -127.61 1.36 4.0 11.85 1.08 1041.2 -9.41 -27.04 -28.70 -127.20 2.00 4.5 11.85 1.06 1048.8 -9.61 -27.38 -28.85 -126.70 2.58 5.0 11.85 1.05 1054.4 -9.70 -27.69 -28.94 -126.33 3.01 [1] Frequency and power measurements performed with spectrum analyzer set to 50KHz bandwidth [2] Phase noise measurements performed with phase noise analyzer set to correlation =25 and averaging = 50 The characteristics of this VCO are shown below. AN11225 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 15 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A ICC [mA] ICC vs. VTUNE 11.88 11.86 11.84 11.82 11.8 11.78 11.76 11.74 11.72 11.7 11.68 0 1 2 3 4 5 4 5 VTUNE [V] Fig 14. ICC vs. VTUNE for VCC = 5V Pushing vs. VTUNE 3.5 Pushing [MHz/V] 3 2.5 2 1.5 1 0.5 0 0 1 2 3 VTUNE [V] Fig 15. Pushing vs. VTUNE AN11225 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 16 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A Output power vs. VTUNE 1.6 Power [dBm] 1.5 1.4 1.3 1.2 1.1 1 0 1 2 3 4 5 4 5 VTUNE [V] Fig 16. Output power vs. VTUNE F1 vs. VTUNE 1060 Frequency [MHz) 1040 1020 1000 980 960 940 0 1 2 3 VTUNE [V] Fig 17. F1 vs. VTUNE AN11225 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 17 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A Tuning sensitivity [MHz/V] Tuning sensitivity vs. VTUNE 30 25 20 15 10 0 1 2 3 4 5 VTUNE [V] Fig 18. Tuning sensitivity vs. VTUNE Harmonics -5 Power [dBc] -10 -15 -20 F2 -25 F3 -30 F4 -35 -40 0 1 2 3 4 5 VTUNE [V] Fig 19. Power of harmonics AN11225 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 18 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A Typical SSB phase noise SSB phase noise [dBc/Hz] -60 -70 -80 -90 -100 -110 -120 -130 1.0E+03 1.0E+04 1.0E+05 1.0E+06 Offset from carrier [Hz] (1) The phase noise shown in this graph is the typical value of the phase noise averaged across the tuning range Fig 20. Average SSB phase noise SSB phase noise vs. Vtune -50 SSB phase noise [dBc/Hz] -60 -70 -80 1KHz -90 10KHz -100 100KHz -110 1MHz -120 -130 0 1 2 3 4 5 VTUNE [V] Fig 21. SSB phase noise vs. VTUNE AN11225 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 19 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A 11. Legal information 11.1 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 11.2 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). 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In no event shall NXP Semiconductors, its affiliates or their suppliers be liable to customer for any special, indirect, consequential, punitive or incidental damages (including without limitation damages for loss of business, business interruption, loss of use, loss of data or information, and the like) arising out the use of or inability to use the product, whether or not based on tort (including negligence), strict liability, breach of contract, breach of warranty or any other theory, even if advised of the possibility of such damages. Notwithstanding any damages that customer might incur for any reason whatsoever (including without limitation, all damages referenced above and all direct or general damages), the entire liability of NXP Semiconductors, its affiliates and their suppliers and customer’s exclusive remedy for all of the foregoing shall be limited to actual damages incurred by customer based on reasonable reliance up to the greater of the amount actually paid by customer for the product or five dollars (US$5.00). The foregoing limitations, exclusions and disclaimers shall apply to the maximum extent permitted by applicable law, even if any remedy fails of its essential purpose. 11.3 Trademarks Notice: All referenced brands, product names, service names and trademarks are property of their respective owners. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine AN11225 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 20 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A 12. List of figures Fig 1. Fig 2. Fig 3. Fig 4. Fig 5. Fig 6. Fig 7. Fig 8. Fig 9. Fig 10. Fig 11. Fig 12. Fig 13. Fig 14. Fig 15. Fig 16. Fig 17. Fig 18. Fig 19. Fig 20. Fig 21. VCO evaluation board with NXP’s BFR92A NPN wideband transistor ........................................... 3 Schematic of VCO EVB .................................... 4 Board layout ...................................................... 4 Board layout with components .......................... 5 PCB stack ......................................................... 5 Colpitts emitter out ............................................ 6 Colpitts collector out .......................................... 6 Colpitts emitter out with buffer stage ................. 7 Gouriet-Clapp emitter out with buffer stage....... 7 Mextram 504 model of BFR92A die expanded with package characteristics ........................... 10 Layout-look-a-like co-simulation component ... 11 Polar plot of small-signal loop gain at VTUNE = 5V ........................................................................ 12 Polar plot of small-signal loop gain at VTUNE = 0V ........................................................................ 12 ICC vs. VTUNE for VCC = 5V............................... 16 Pushing vs. VTUNE ........................................... 16 Output power vs. VTUNE ................................... 17 F1 vs. VTUNE .................................................... 17 Tuning sensitivity vs. VTUNE ............................. 18 Power of harmonics ........................................ 18 Average SSB phase noise .............................. 19 SSB phase noise vs. VTUNE ............................. 19 AN11225 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 21 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A 13. List of tables Table 1. Table 2. Table 3. Example of mounted components and functions .......................................................................... 8 Bill of materials................................................ 13 Typical results ................................................. 15 AN11225 Application note All information provided in this document is subject to legal disclaimers. Rev. 1.0 — 26 June 2012 © NXP B.V. 2012. All rights reserved. 22 of 23 AN11225 NXP Semiconductors Demonstration of a 1GHz discrete VCO based on the BFR92A 14. Contents 1. 2. 3. 4. 5. 5.1 5.2 5.3 5.4 6. 6.1 6.2 7. 7.1 7.2 7.3 8. 9. 9.1 9.2 9.2.1 9.2.2 9.2.3 10. 11. 11.1 11.2 11.3 12. 13. 14. Introduction ......................................................... 3 General board schematic.................................... 4 Board layout ........................................................ 4 PCB stack............................................................. 5 Example board configurations ........................... 6 Configuration 1 - Colpitts emitter out .................. 6 Configuration 2 – Colpitts Collector out .............. 6 Configuration 3 – Colpitts emitter out with buffer stage .................................................................. 7 Configuration 4- Clapp emitter out with buffer stage .................................................................. 7 Design and evaluation ........................................ 9 Design recommendations................................... 9 Using the bias tweaking pin.............................. 10 BFR92A 10mA VCO implementation ............... 10 BFR92A model ................................................. 10 PCB characterization ....................................... 11 Simulation of oscillation frequency ................... 11 Bill of materials.................................................. 13 Measurements ................................................... 14 Required equipment ......................................... 14 Connections and setup .................................... 14 Current measurements .................................... 14 Frequency and power measurements .............. 14 Phase noise measurements ............................. 15 Typical results ................................................... 15 Legal information .............................................. 20 Definitions ........................................................ 20 Disclaimers....................................................... 20 Trademarks ...................................................... 20 List of figures..................................................... 21 List of tables ...................................................... 22 Contents ............................................................. 23 Please be aware that important notices concerning this document and the product(s) described herein, have been included in the section 'Legal information'. © NXP B.V. 2012. All rights reserved. For more information, visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 26 June 2012 Document identifier: AN11225