TLHE42T2V1 Datasheet

TLHE42T2V1
www.vishay.com
Vishay Semiconductors
High Intensity LED in Ø 3 mm Tinted Non-Diffused Package
FEATURES
• AlInGaP technology
• Standard Ø 3 mm (T-1) package
• Small mechanical tolerances
• Suitable for DC and high peak current
• Small viewing angle
• Very high intensity
19222
• Luminous intensity color categorized
DESCRIPTION
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
This device has been designed to meet the increasing
demand for AlInGaP technology.
It is housed in a 3 mm clear plastic package. The small
viewing angle of these devices provides a high brightness.
APPLICATIONS
All packing units are categorized in luminous intensity and
color groups. That allows users to assemble with uniform
appearance.
• Off / on indicator
• Status lights
• Background illumination
• Readout lights
PRODUCT GROUP AND PACKAGE DATA
• Maintenance lights
• Product group: LED
• Legend light
• Package: 3 mm
• Product series: standard
• Angle of half intensity: ± 22°
PARTS TABLE
PART
COLOR
TLHE42T2V1
LUMINOUS INTENSITY
WAVELENGTH
FORWARD VOLTAGE
at IF
at IF
at IF
(mcd)
(nm)
(V)
(mA)
(mA)
(mA)
MIN.
TYP.
MAX.
MIN. TYP. MAX.
MIN.
TYP. MAX.
Yellow
355
-
900
20
581
588
594
20
-
2
2.6
20
TECHNOLOGY
AlInGaP on GaAs
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
TLHE42T2V1
PARAMETER
TEST CONDITION
SYMBOL
VALUE
VR
5
V
Tamb ≤ 60 °C
IF
30
mA
tp ≤ 10 μs
IFSM
0.1
A
Tamb ≤ 60 °C
PV
80
mW
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.2, 14-Oct-14
t ≤ 5 s, 2 mm from body
UNIT
Tj
100
°C
Tamb
-40 to +100
°C
Tstg
-55 to +100
°C
Tsd
260
°C
RthJA
400
K/W
Document Number: 83436
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TLHE42T2V1
www.vishay.com
Vishay Semiconductors
OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TLHE42T2V1, YELLOW
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Luminous intensity (1)
PARAMETER
IF = 20 mA
IV
355
-
900
mcd
Dominant wavelength
IF = 20 mA
λd
581
588
594
nm
Peak wavelength
IF = 20 mA
λp
-
590
-
nm
Angle of half intensity
IF = 20 mA
ϕ
-
± 22
-
deg
Forward voltage
IF = 20 mA
VF
-
2
2.6
V
Reverse voltage
IR = 10 μA
VR
5
-
-
V
VR = 0 V, f = 1 MHz
Cj
-
15
-
pF
Junction capacitance
Note
(1) In one packing unit I
Vmax./IVmin. ≤ 1.6
LUMINOUS INTENSITY CLASSIFICATION
GROUP
COLOR CLASSIFICATION
YELLLOW
LIGHT INTENSITY (mcd)
STANDARD
OPTIONAL
MIN.
MAX.
T
2
355
450
1
U
450
2
V
560
1
710
GROUP
DOM. WAVELENGTH (nm)
MIN.
MAX.
560
2
583
586
710
3
585
588
900
4
587
590
5
589
592
6
591
594
Note
• Luminous intensity is tested at a current pulse duration of 25 ms
and an accuracy of ± 11 %.
The above type numbers represent the order groups which
include only a few brightness groups. Only one group will be
shipped on each bag (there will be no mixing of two groups on
each bag).
In order to ensure availability, single brightness groups will not
be orderable.
In a similar manner for colors where wavelength groups are
measured and binned, single wavelength groups will be shipped
on any one bag.
In order to ensure availability, single wavelength groups will not
be orderable.
Note
• Wavelengths are tested at a current pulse duration of 25 ms.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
0°
10°
20°
50
40
30
20
10
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
30°
IV rel - Relative Luminous Intensity
I F - Forward Current (mA)
60
80°
0
0
95 10894
20
40
60
80
Fig. 1 - Forward Current vs. Ambient Temperature for InGaN
Rev. 1.2, 14-Oct-14
0.6
100
T amb - Ambient Temperature (°C)
0.4
0.2
0
95 10041
Fig. 2 - Relative Luminous Intensity vs. Angular Displacement
Document Number: 83436
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TLHE42T2V1
www.vishay.com
Vishay Semiconductors
IV rel - Relative Luminous Intensity
IF - Forward Current (mA)
100
10
1
1.5
2
2.5
1
0.1
1
3
17501
VF - Forward Voltage (V)
95 10878
Fig. 3 - Forward Current vs. Forward Voltage
10
100
IF - Forward Current (mA)
Fig. 6 - Relative Luminous Intensity vs. Forward Current
1.6
1.2
1.4
IF = 20 mA
IF = 20 mA
1.0
Irel - Relative Intensity
IV rel - Relative Luminous Intensity
yellow
0.01
1
1.2
1.0
0.8
0.6
0.4
0.8
0.6
0.4
0.2
0.2
0.0
0
95 10880
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 4 - Relative Luminous Intensity vs. Ambient Temperature
ΔVF - Change of Forward Voltage (mV)
10
0.0
550
95 10881
570
590
610
630
650
λ - Wavelength (nm)
Fig. 7 - Relative Intensity vs. Wavelength
200
100
0
- 100
- 200
- 300
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 5 - Change of Forward Voltage vs. Ambient Temperature
Rev. 1.2, 14-Oct-14
Document Number: 83436
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TLHE42T2V1
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
C
Ø 3.2 ± 0.15
A
AREA NOT PLANE
5.8 ± 0.3
34.4 ± 0.5
< 0.6
(2.5)
3.4 ± 0.15
4.4 ± 0.3
R1.4 (sphere)
Ø 2.9 ± 0.15
2.54 nom.
1.5 ± 0.5
+ 0.15
+ 0.2
0.5 - 0.1
0.4 - 0.05
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5255.01-4
Issue: 9; 28.07.14
Rev. 1.2, 14-Oct-14
Document Number: 83436
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000