TO PIDSA HQ
DELIVERY SPECIFICATIONS
Orderer (Customer) Part Number
Panasonic Global Part Number
Vendor Issue Number
AN44066A-VF
1203029
ORDERER (CUSTOMER)
Confirmation of Security Control
We confirm and certify that the products of these specifications shall not be supplied so as to be used for Military Purpose (defined herein
below). "Military Purpose" in this statement means the design, development, manufacture, storage or use of any weapons, including
without limitation nuclear weapons, biological weapons, chemical weapons and missiles.
Receipt Date:
/
/
VENDOR
"Changes in the description of Delivery Specifications" and "changes that affect performance, quality or environment" are implemented
according to advance consultation.
2012. 3.12
Issuance Date:
/
/
Industrial Devices Company, Panasonic Corporation
SMART Puniness distraction
S423140-09#01
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or
provided to non-residents, the laws and regulations of the exporting country, especially, those with
regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics
and application circuit examples of the products. No license is granted in and to any intellectual
property right or other right owned by Panasonic Corporation or any other company. Therefore, no
responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information de-scribed in this book.
(3)The products described in this book are intended to be used for general applications (such as
office equipment, communications equipment, measuring instruments and household appliances), or for
specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
・Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling
equipment, combustion equipment, life support systems and safety devices) in which exceptional quality
and reliability are required, or if the failure or malfunction of the products may directly jeopardize
life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a
result of or in connection with your using the products described in this book for any special
application, unless our company agrees to your using the products in this book for any special
application.
(4)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed
operating conditions (operating power supply voltage and operating environment etc.). Especially,
please be careful not to exceed the range of absolute maximum rating on the transient state, such as
power-on, power-off and mode-switching. Other-wise, we will not be liable for any defect which may
arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence
of break down and failure mode, possible to occur to semiconductor products. Measures on the systems
such as redundant design, arresting the spread of fire or preventing glitch are recommended in order
to prevent physical injury, fire, social damages, for example, by using the products.
(5)Comply with the instructions for use in order to prevent breakdown and characteristics change due
to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting
or at customer's process. When using products for which damp-proof packing is required, satisfy the
conditions, such as shelf life and the elapsed time since first opening the packages.
(6)This book may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of our company.
Reprint from WARNING LABEL STANDARDS SC3-11-00007
This delivery specifications may include old company names such as “Matsushita Electronics Corporation” or
“Semiconductor Company, Matsushita Electric Industrial Co., Ltd .“”Semiconductor Company, Panasonic
Corporation ” Please interpret these old company names as Industrial Devices Company, Panasonic
Corporation” as of January 1, 2012.
Regulations No.:
IC3F5211
Total Pages
Page
37
1
Product Standards
Part No.
AN44066A
Package Code No.
SSOP032-P-0300B
Semiconductor Company
Matsushita Electric Industrial Co., Ltd.
Established by
Applied by
Checked by
Prepared by
M.Hiramatsu
Y.Kakizaki
T.Iwami
2008-04-11
Established
214406600108040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
2
Contents
Overview …………………………………………………….……………………………………………………… 3
Features ………………………………………………….………………………………………………………… 3
Applications ………………………………………………….……………………………………………………… 3
Package ………………………………………………….…………………………………………………………. 3
Type ……………………………………………………….…………………………………………………………. 3
Application Circuit Example ……………………………………………………………………………………… 4
Block Diagram ……………………………………………….……………………………………………………… 5
Pin Descriptions ………………………………………….………………………………………………………… 6
Absolute Maximum Ratings ……………………………….……………………………………………………… 7
Operating Supply Voltage Range …………………….…………………………………………………………… 7
Allowable Current and Voltage Range ……………………………………………………………………………
8
Electrical Characteristics …………….……………………………………………………………………………
9
Electrical Characteristics (Reference values for design) …………….…………………………………………. 11
Test Circuit Diagram …………………………….………………………………………………………………… 12
Electrical Characteristics Test Procedures ………….……………………………………………………………. 16
Technical Data ………………………………………….…………………………………………………………… 21
y I/O block circuit diagrams and pin function descriptions ………………………………………………………. 21
y Control Mode
………………………………….…………………………………………………………………. 26
Usage Notes ………………………………………….……………………………………………………………. 31
y Special attention and precaution in using ………………………………………………………………………. 31
y Notes of Power LSI ………………………………………………………………………………………………. 32
2008-04-11
Established
214406600208040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
3
AN44066A
Driver IC for Stepping Motor
Overview
AN44066A is a two channels H-bridge driver IC. Bipolar stepping motor can be controlled by this single driver IC.
2-phase, half-step, 1-2 phase, W1-2 phase can be selected.
Features
y 2-phase input control by rationalization of interface (2-phase excitation, half-step, and 1-2 phase excitation enabled)
y 4-phase input control (W1-2 phase excitation enabled)
y Built-in CR chopping (with frequency selected)
y Built-in standby function
y Built-in thermal protection and low voltage detection circuit
y Built-in 5 V power supply
Applications
y IC for stepping motor drives
Package
y 32 pin Plastic Shrink Small Outline Package (SSOP Type)
Type
y Bi-CDMOS IC
2008-04-11
Established
214406600308040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
4
Application Circuit Example
BC1 18
0.01 µF
BC2 17
16 VPUMP
CHARGE
PUMP
0.01 µF
PHB1 26
Gate Circuit
IN0
IN3 30
3 BOUT2
S Q
R
IN2 29
5 RCSB
7 BOUT1
15 VM2
VREFB 20
TJMON 32
PWMSW 24
S5VOUT
0.1 µF
PWMSW
OSC
TSD
UVLO
47 µF
BLANK
VREFA 19
1 VM1
9 AOUT2
Q S
R
11 RCSA
IN1 28
13 AOUT1
IN0 27
ENABLEA 31
IN2
Gate Circuit
PHA1 25
STBY 22
S5VOUT 21
Reg
VM
23 GND
0.1 µF
Note) y This application circuit is shown as an example but does not guarantee the design for mass production set.
2008-04-11
Established
214406600408040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
5
Block Diagram
BC1 18
BC2 17
16 VPUMP
CHARGE
PUMP
PHB1 26
Gate Circuit
IN0
IN3 30
3 BOUT2
S Q
R
IN2 29
5 RCSB
7 BOUT1
15 VM2
VREFB 20
TJMON 32
PWMSW 24
S5VOUT
PWMSW
OSC
TSD
UVLO
BLANK
VREFA 19
1 VM1
9 AOUT2
Q S
R
11 RCSA
IN1 28
13 AOUT1
IN0 27
ENABLEA 31
IN2
Gate Circuit
PHA1 25
STBY 22
S5VOUT 21
Reg
VM
23 GND
Note) This block diagram is for explaining functions. The part of the block diagram may be omitted, or it may be simplified.
2008-04-11
Established
214406600508040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
6
Pin Descriptions
Pin No.
Pin name
Type
Description
1
VM1
Power supply
2
N.C.
—
3
BOUT2
4
N.C.
5
RCSB
6
N.C.
7
BOUT1
8
N.C.
9
AOUT2
10
N.C.
11
RCSA
12
N.C.
13
AOUT1
14
N.C.
—
15
VM2
Power supply
16
VPUMP
Output
Charge Pump circuit output
17
BC2
Output
Charge Pump capacitor connection 2
18
BC1
Output
Charge Pump capacitor connection 1
19
VREFA
Input
Phase A torque reference voltage input
20
VREFB
Input
Phase B torque reference voltage input
21
S5VOUT
Output
Internal reference voltage (5 V output)
22
STBY
Input
Standby setting
23
GND
Ground
Signal ground
24
PWMSW
Input
PWM frequency selection input
25
PHA1
Input
Phase A phase selection input
26
PHB1
Input
Phase B phase selection input
27
IN0
Input
Phase A output torque control 1
28
IN1
Input
Phase A output torque control 2
29
IN2
Input
Phase B output torque control 1
30
IN3
Input
Phase B output torque control 2
31
ENABLEA
Input
Phase A/B start/stop signal input
32
TJMON
Output
—
Input
/ Output
—
Output
—
Output
—
Input
/ Output
—
Output
Output
Motor power supply 1
N.C.
Phase B motor drive output 2
N.C.
Phase B current detection
N.C.
Phase B motor drive output 1
N.C.
Phase A motor drive output 2
N.C.
Phase A current detection
N.C.
Phase A motor drive output 1
N.C.
Motor power supply 2
VBE monitor
2008-04-11
Established
214406600608040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
7
Absolute Maximum Ratings
Note) Absolute maximum ratings are limit values which are not destructed, and are not the values to which operation is guaranteed.
A No.
Parameter
Symbol
Rating
Unit
Note
1
Supply voltage (Pin 1, 15)
VM
37
V
*1
2
Power dissipation
PD
0.427
W
*2
3
Operating ambient temperature
Topr
–20 to +70
°C
*3
4
Storage temperature
Tstg
–55 to +150
°C
*3
5
Output pin voltage (Pin 3, 7, 9, 13)
VOUT
37
V
*4
6
Motor drive current (Pin 3, 7, 9, 13)
IOUT
±0.8
A
*4
7
Flywheel diode current (Pin 3, 7, 9, 13)
If
0.8
A
*4
Notes) *1 : The values under the condition not exceeding the above absolute maximum ratings and the power dissipation.
*2 : The power dissipation shown is the value at Ta = 70°C for the independent (unmounted) IC package without a heat sink.
When using this IC, refer to the PD-Ta diagram of the package standard and design the heat radiation with sufficient margin so that the
allowable value might not be exceeded based on the conditions of power supply voltage, load, and ambient temperature.
*3 : Except for the power dissipation, operating ambient temperature, and storage temperature, all ratings are for Ta = 25°C.
*4 : Do not apply external currents or voltages to any pin not specifically mentioned.
For the circuit currents, "+" denotes current flowing into the IC, and "−" denotes current flowing out of the IC.
Operating Supply Voltage Range
Parameter
Operating supply voltage range
Symbol
Range
Unit
Note
VM
10.0 to 34.0
V
*
Note) *: The values under the condition not exceeding the above absolute maximum ratings and the power dissipation.
2008-04-11
Established
214406600708040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
8
Allowed Voltage and Current Ranges
Notes) y Rating Voltage is voltage of pin on GND
y Do not apply current or voltage from outside to any pin not listed above.
y For the circuit currents, "+" denotes current flowing into the IC, and "−" denotes current flowing out of the IC.
Pin No.
Pin name
Rating
Unit
Note
5
RCSB
2.5
V
—
11
RCSA
2.5
V
—
16
VPUMP
(VM – 1) to 43
V
*1
17
BC2
(VM – 1) to 43
V
*1
18
BC1
VM + 0.3
V
*1
19
VREFA
–0.3 to 6
V
—
20
VREFB
–0.3 to 6
V
—
22
STBY
–0.3 to 6
V
—
24
PWMSW
–0.3 to 6
V
—
25
PHA1
–0.3 to 6
V
—
26
PHB1
–0.3 to 6
V
—
27
IN0
–0.3 to 6
V
—
28
IN1
–0.3 to 6
V
—
29
IN2
–0.3 to 6
V
—
30
IN3
–0.3 to 6
V
—
31
ENABLEA
–0.3 to 6
V
—
Pin No.
21
Pin name
S5VOUT
Rating
Unit
Note
–5 to 0
mA
*1
*2
Notes) *1 : Do not apply external voltages to this pin. Set not to exceed allowable range at any time.
*2 : This is the rating under the condition that VM is used in the range between 16 V and 34 V. When VM is used in the range between 10 V and
16 V, the rating is –1.4 mA to 0.
2008-04-11
Established
214406600808040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
9
Electrical Characteristics at VM = 24 V
Note) Ta = 25°C±2°C unless otherwise specified.
B
No.
Parameter
Symbol
Test
circuits
Limits
Conditions
Min
Typ
Max
Unit
Note
Power Block
1
High-level output saturation voltage
VOH
3
IIN = –0.5 A
VM –
0.47
VM –
0.31
—
V
—
2
Low-level output saturation voltage
VOL
3
IIN = 0.5 A
—
0.47
0.71
V
—
3
Flywheel diode forward voltage
VDI
4
IIN = ±0.5 A
0.5
1.0
1.5
V
—
4
Output leakage current
ILEAK
1
VM = 37 V, VRCS = 0 V
—
10
20
µA
—
5
Supply current (at when only control
system and charge Pump circuit are
ON)
IM
1
ENABLEA = 3.3 V
STBY = 0 V
—
5.4
8.2
mA
—
6
Supply current (at standby mode)
ISTBY
1
STBY = 2.1 V
—
120
190
µA
—
I/O Block
7
High-level IN input voltage
VINH
1
—
2.2
—
5.5
V
—
8
Low-level IN input voltage
VINL
1
—
0
—
0.6
V
—
9
High-level IN input current
IINH
1
IN0 = IN1 = IN2 = IN3 =
5V
–10
―
10
µA
—
10
Low-level IN input current
IINL
1
IN0 = IN1 = IN2 = IN3 =
0V
–15
―
15
µA
—
11
High-level PHA1/PHB1 input
voltage
VPHAH
VPHBH
1
—
2.2
—
5.5
V
—
12
Low-level PHA1/PHB1 input
voltage
VPHAL
VPHBL
1
—
0
—
0.6
V
—
13
High-level PHA1/PHB1 input
current
IPHAH
IPHBH
1
PHA1 = PHB1 = 3.3 V
16.5
33
66
µA
—
14
Low-level PHA1/PHB1 input current
IPHAL
IPHBL
1
PHA1 = PHB1 = 0 V
–15
―
15
µA
—
15
High-level ENABLEA input voltage
VENABLEAH
1
—
2.2
—
5.5
V
—
16
Low-level ENABLEA input voltage
VENABLEAL
1
—
0
—
0.6
V
—
17
High-level ENABLEA input current
IENABLEAH
1
ENABLEA = 5 V
–10
―
10
µA
—
18
Low-level ENABLEA input current
IENABLEAL
1
ENABLEA = 0 V
–15
―
15
µA
—
19
High-level PWMSW input voltage
VPWMSWH
2
—
2.2
—
5.5
V
—
20
Low-level PWMSW input voltage
VPWMSWL
2
—
0
—
0.6
V
—
21
High-level PWMSW input current
IPWMSWH
1
PWMSW = 3.3 V
8
16.5
33
µA
—
22
Low-level PWMSW input current
IPWMSWL
1
PWMSW = 0 V
–15
―
15
µA
—
23
High-level STBY input voltage
VSTBYH
1
—
2.1
—
5.5
V
—
24
Low-level STBY input voltage
VSTBYL
1
—
0
—
0.6
V
—
25
High-level STBY input current
ISTBYH
1
STBY = 5 V
—
30
45
µA
—
26
Low-level STBY input current
ISTBYL
1
STBY = 0 V
–2
―
2
µA
—
2008-04-11
Established
214406600908040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
10
Electrical Characteristics (continued) at VM = 24 V
Note) Ta = 25°C±2°C unless otherwise specified.
B
No.
Parameter
Symbol
Test
circuits
Limits
Conditions
Unit
Note
125
µA
—
Min
Typ
Max
83.3
100
Torque Control Block
27
Input bias current
IREFA
IREFB
1
VREFA = 5 V
VREFB = 5 V
28
PWM frequency1
fPWM1
2
PWMSW = 0.6 V
34
52
70
kHz —
29
PWM frequency2
fPWM2
2
PWMSW = 2.2 V
17
26
35
kHz —
30
Pulse blanking time
TB
2
VREFA = VREFB = 0 V
0.38
0.75
1.12
µs
—
31
Comp threshold H (100%)
VTH
1
VREFA = VREFB = 3.3 V
IN0 = IN1 = 0.6 V
IN2 = IN3 = 0.6 V
627
660
693
mV
—
32
Comp threshold C (67%)
VTC
1
VREFA = VREFB = 3.3 V
IN0 = 2.2 V, IN1 = 0.6 V
IN2 = 2.2 V, IN3 = 0.6 V
410
440
470
mV
—
33
Comp threshold L (33%)
VTL
1
VREFA = VREFB = 3.3 V
IN0 = 0.6 V, IN1 = 2.2 V
IN2 = 0.6 V, IN3 = 2.2 V
200
220
240
mV
—
Reference Voltage Block
34
Reference voltage
VS5VOUT
1
IS5VOUT = 0 mA
4.5
5.0
5.5
V
—
35
Output impedance
ZS5VOUT
1
IS5VOUT = –1.5 mA, –3.5 mA
—
18
27
Ω
—
2008-04-11
Established
214406601008040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
11
Electrical Characteristics (Reference values for design) at VM = 24 V
Notes) Ta = 25°C±2°C unless otherwise specified.
The characteristics listed below are reference values derived from the design of the IC and are not guaranteed by inspection.
If a problem does occur related to these characteristics, we will respond in good faith to user concerns.
B
No.
Parameter
Symbol
Test
circuits
Reference values
Conditions
Min
Typ
Max
Unit
Note
Output Drivers
36
Output slew rate 1
VTr
—
Output voltage rising edge
—
270
—
V/µs
—
37
Output slew rate 2
VTf
—
Output voltage falling edge
—
330
—
V/µs
—
38
Dead time
TD
—
—
—
2.8
—
µs
—
Thermal Protection
39
Thermal protection operating
temperature
TSDon
—
—
—
150
—
ºC
—
40
Thermal protection hysteresis width
∆TSD
—
—
—
40
—
ºC
—
ZVREFA
ZVREFB
—
40
50
60
kΩ
—
—
—
–20
—
20
%
—
IPHAH2
IPHBH2
—
PHA1 = PHB1 = 5 V
—
68
—
µA
*1
IPWMSWH2
—
PWMSW = 5 V
—
42
—
µA
*1
VREF Block
41
Input impedance
42
Input impedance precision
VREFA = 5 V
VREFB = 5 V
—
I/O Block
43
High-level PHA1/PHB1 input current 2
44
High-level PWMSW input current 2
Note) *1 : Refer to the “Usage Notes” (P.35) for the input current characteristics about PHA1, PHB1, PWMSW.
2008-04-11
Established
214406601108040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
214406601208040
Established
3
10 kΩ
1
2
S3
3
1
2
3
1
2
IVM
VAOUT1
V
S4
3
17 BC2
18 BC1
19 VREFA IREFA
20 VREFB IREFB
A
VPUMP 16
VM2 15
N.C. 14
AOUT1 13
A
A
1
0.01 µF
A
21 S5VOUT
22 STBY
VSREFA
VSREFB
0.1 µF
IS5VOUT
ISTBY
VPWMSW
VS5VOUT
VSTBY
Product Standards
VM
V
VRCS
N.C. 12
RCSA 11
23 GND
IPWMSW
A
12 V 75 Ω
V
VAOUT2
N.C. 10
24 PWMSW
A
VSRCSA
S2
12 V 75 Ω
V
AOUT2 9
VSPHB1
VSPHA1
VSIN0
A
VBOUT1
IPHB1
25 PHA1 IPHA1
26 PHB1
VSIN1
A
N.C. 8
BOUT1 7
IIN0
27 IN0
N.C. 6
VSIN2
A
12 V 75 Ω
V
VRCSB
IIN1
28 IN1
IIN2
VSIN3
VSENA
A
VSA1
2
A
VSA2
1
VSRCSB
V
RCSB 5
29 IN2
N.C. 4
IIN3
A
VBOUT2
30 IN3
IENA
A
12 V 75 Ω
S1
BOUT2 3
31 ENABLEA
N.C. 2
V
VSB1
VSB2
32 TJMON
VM1 1
AN44066A
Total Pages
Page
37
12
Test Circuit Diagram
1. Test Circuit 1
V
0.01 µF
S6
S5
2
10 kΩ
2008-04-11
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
13
Test Circuit Diagram (continued)
2. Test Circuit 2
VPWMSW
24 V
15 Ω 330 µH
VRCSA
VRCSB
VM
20 VREFB
19 VREFA
18 BC1
17 BC2
N.C. 14
VM2 15
VPUMP 16
0.01 µF
AOUT1 13
S5VOUT
21
N.C. 12
STBY
RCSA 11
0.68 Ω
0.68 Ω
V
22
23 GND
1 µF
N.C. 10
AOUT2 9
24 PWMSW
VPHA1
25 PHA1
N.C. 8
VPHB1
26 PHB1
BOUT1 7
28 IN1
RCSB 5
27 IN0
29 IN2
N.C. 4
47 µF
N.C. 6
30 IN3
31 ENABLEA
N.C. 2
BOUT2 3
32 TJMON
VM1 1
0.6 V
0.01 µF
V
15 Ω 330 µH
2008-04-11
Established
214406601308040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
14
Test Circuit Diagram (continued)
3. Test Circuit 3
20 VREFB
19 VREFA
18 BC1
17 BC2
AOUT1 13
N.C. 14
VM2 15
VPUMP 16
S5VOUT
21
22 STBY
RCSA 11
N.C. 12
23 GND
0.01 µF
N.C. 10
24 PWMSW
2.5 V
2.5 V
1 µF
3.3 V
AOUT2 9
VPHA1
25 PHA1
N.C. 8
27 IN0
N.C. 6
VPHB1
28 IN1
RCSB 5
26 PHB1
29 IN2
N.C. 4
BOUT1 7
30 IN3
31 ENABLEA
N.C. 2
47 µF
BOUT2 3
32 TJMON
VM1 1
0V
1
VM
24 V
2
3
V
VAOUT1
V
V
VAOUT2
V
VBOUT1
VBOUT2
0.01 µF
4
S9
IIN
2008-04-11
Established
214406601408040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
214406601508040
Established
VBOUT2
V
VBOUT1
1
IIN
2
V
V
3
VAOUT2
V
VAOUT1
19 VREFA
18 BC1
17 BC2
VM2 15
VPUMP 16
20 VREFB
AOUT1 13
N.C. 14
21 S5VOUT
22 STBY
RCSA 11
N.C. 12
23 GND
24 PWMSW
N.C. 10
AOUT2 9
25 PHA1
27 IN0
N.C. 6
N.C. 8
28 IN1
RCSB 5
26 PHB1
29 IN2
N.C. 4
BOUT1 7
30 IN3
31 ENABLEA
N.C. 2
BOUT2 3
32 TJMON
VM1 1
1 µF
AN44066A
Product Standards
Total Pages
Page
37
15
Test Circuit Diagram (continued)
4. Test Circuit 4
4
S9
2008-04-11
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
16
Electrical Characteristics Test Procedures
1. Test Circuit 1
Relay Conditions
Measuring
S1 S2
V
Pin
S5 S6 VSPHA1
S3 S4
SPHB1
VSIN0
VSIN2
VSIN1
VSIN3
3, 7, 9, 13
1
1
1
OFF
0V
0V
0V
5V
7, 13
1
1
1
OFF
5V
0V
0V
3, 9
1
1
1
OFF
0V
0V
10
14 22, 24, 25,
18 26, 27, 28,
22 29, 30, 31
26
1
1
2
ON
0V
27 19, 20
1
1
1
OFF
0V
34
21
1
1
2
35 21
1
1
5
1, 15, 22
24
1
9 27, 28, 29
17 30, 31
No.
Voltage Conditions
VSRCSA
VSRCSB
VSA2
VSB2
VSA1
VSB1
VM
VSTBY
IS5VOUT
VSREFA
VSREFB
3.3 V
0V
0V
0V
37 V
0V
Hi-Z
2.5 V
0V
3.3 V
0V
Hi-Z
37 V
37 V
0V
Hi-Z
2.5 V
0V
0V
3.3 V
0V
37 V
Hi-Z
37 V
0V
Hi-Z
2.5 V
0V
0V
0V
0V
0V
Hi-Z
Hi-Z
24 V
0V
Hi-Z
5V
0V
0V
0V
3.3 V
0V
Hi-Z
Hi-Z
24 V
0V
Hi-Z
5V
ON 3.3 V
0V
0V
0V
3.3 V
0V
Hi-Z
Hi-Z
24 V
0.6 V
Hi-Z
5V
2
ON 3.3 V
0V
0V
0V
3.3 V
0V
Hi-Z
Hi-Z
24 V
0.6 V
–1.5
– 3.5
mA
5V
1
2
ON 3.3 V
0V
0V
3.3 V 3.3 V
0V
Hi-Z
Hi-Z
24 V
0.6 V
Hi-Z
5V
1
1
2
ON
5V
5V
5V
5V
0V
Hi-Z
Hi-Z
24 V
0V
Hi-Z
5V
13
24, 25, 26
21
1
1
2
ON 3.3 V
5V
5V
5V
3.3 V
0V
Hi-Z
Hi-Z
24 V
0V
Hi-Z
5V
25 22
1
1
2
ON 3.3 V
5V
5V
5V
3.3 V
0V
Hi-Z
Hi-Z
24 V
5V
Hi-Z
5V
6
1, 15, 22
23
1
1
2
ON
5V
5V
5V
5V
0V
Hi-Z
Hi-Z
24 V
2.1 V
Hi-Z
5V
11 3, 7, 9, 13
3
3
2
ON 2.2 V 0.6 V 2.2 V 0.6 V 3.3 V
0V
Hi-Z
Hi-Z
24 V
0.6 V
Hi-Z
5V
12 3, 7, 9, 13
3
3
2
ON 0.6 V 2.2 V 0.6 V 0.6 V 3.3 V
0V
Hi-Z
Hi-Z
24 V
0.6 V
Hi-Z
5V
15 3, 7, 9, 13
3
3
2
ON 0.6 V
*1
*1
0.6 V 3.3 V
0V
Hi-Z
Hi-Z
24 V
0.6 V
Hi-Z
5V
16 3, 7, 9, 13
3
3
2
ON 0.6 V
*1
*1
2.2 V 3.3 V
0V
Hi-Z
Hi-Z
24 V
0.6 V
Hi-Z
5V
8
3, 9
31
2
2
1
OFF 3.3 V 0.6 V 0.6 V
0V
3.3 V
0V
↓
1V
Hi-Z
Hi-Z
24 V
0V
Hi-Z
3.3 V
7
8 3, 9
32
2
2
1
OFF 3.3 V 2.2 V 0.6 V
0V
3.3 V
0V
↓
1V
Hi-Z
Hi-Z
24 V
0V
Hi-Z
3.3 V
7
8 3, 9
33
2
2
1
OFF 3.3 V 0.6 V 2.2 V
0V
3.3 V
0V
↓
1V
Hi-Z
Hi-Z
24 V
0V
Hi-Z
3.3 V
4
5V
5V
VSENA VPWMSW
Note) *1 : Refer to the “Electrical Characteristics Test Procedures” (P.18) for the input voltage of VSIN0 , VSIN1 , VSIN2 , VSIN3 (No.15, No16).
2008-04-11
Established
214406601608040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
17
Electrical Characteristics Test Procedures (continued)
1. Test Circuit 1(continued)
7)
8)
31)
32)
33)
High-level IN input voltage
Low-level IN input voltage
Comp threshold H (100%)
Comp threshold C (67%)
Comp threshold L (33%)
VAOUT2 ,
VBOUT2
VINH
VINL
VTH
VTC
VTL
Region A
Region B
Perform RCS voltage sweeping and measure the threshold
voltages on the output pins respectively.
24 V
Region A : Always high-level output
Region B : High-level output with the duty kept to a
minimum
12 V
0V
VRCSA / VRCSB
No.
Voltage Conditions
Measuring
Pin
Status
VSIN0
VSIN1
VSIN2
VSIN3
8, 31
AOUT2 /
BOUT2
0.6 V
0.6 V
0.6V
0.6 V
Measure the VAOUT2/VBOUT2 threshold voltage.
7, 8, 32
AOUT2 /
BOUT2
2.2 V
0.6 V
2.2 V
0.6 V
Measure the VAOUT2/VBOUT2 threshold voltage.
7, 8, 33
AOUT2 /
BOUT2
0.6 V
2.2 V
0.6 V
2.2 V
Measure the VAOUT2/VBOUT2 threshold voltage.
11) High-level PHA1/PHB1 input voltage
12) Low-level PHA1/PHB1 input voltage
"H"
24 V
VAOUT1 ,
VBOUT1
VPHAH, VPHBH
VPHAL, VPHBL
Measure the AOUT1/BOUT1 voltage and AOUT2/BOUT2
voltage with the input voltage set to high level and low level
respectively.
SPEC
SPEC
"L"
0V
Voltage Conditions
Measuring Pin
"H"
24 V
VAOUT2 ,
VBOUT2
SPEC
SPEC
Status
VSPHA1 / VSPHB1
VSPHA1 / VSPHB1
AOUT1 /BOUT1
0.6 V
Low-level output
AOUT2 /BOUT2
0.6 V
High-level output
AOUT1 /BOUT1
2.2 V
High-level output
AOUT2 /BOUT2
2.2 V
Low-level output
"L"
0V
VSPHA1 / VSPHB1
0.6 V
2.2 V
2008-04-11
Established
214406601708040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
18
Electrical Characteristics Test Procedures (continued)
1. Test Circuit 1(continued)
15) High-level ENABLEA input voltage
16) Low-level ENABLEA input voltage
VENABLEAH
VENABLEAL
VAOUT1 ,
VBOUT1
12 V
SPEC
SPEC
0V
VENABLE
24 V
VAOUT2 ,
VBOUT2
SPEC
SPEC
Set to VSPHA1 /VSPHB1 = 0.6 V and check that the threshold
voltage is in the specification range (SPEC) under the following
condition
VSENA VSIN0
VSIN1
VSIN2
VSIN3
VAOUT1 /
VBOUT1
VAOUT2 /
VBOUT2
0.6 V
0V
0V
0V
0V
0V
24 V
2.2 V
0.6 V
0.6 V
2.2 V
0.6 V
12 V
12 V
12 V
0V
VENABLE
0.6 V
35) Output impedance
2.2 V
ZS5VOUT
VS5VOUT
VA
VB
ZS5VOUT =
VA–VB
2 mA
0 mA –1.5 mA –3.5 mA
IS5VOUT
2008-04-11
Established
214406601808040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
19
Electrical Characteristics Test Procedures (continued)
2. Test Circuit 2
19) High-level PWMSW input voltage VPWMSWH
20) Low-level PWMSW input voltage VPWMSWL
28) PWM frequency1
fPWM1
29) PWM frequency2
fPWM2
30) Pulse blanking time TB
Each value is obtained by the voltage of AOUT1, AOUT2, BOUT1, and BOUT2 at VREFA = VREFB = 0 V and PHA1 = PHB1
= 0 V or PHA1 = PHB1 = 3.3 V.
The VAOUT1 / VAOUT2 / VBOUT1 / VBOUT2 output waveform is shown below.
VAOUT1 / VAOUT2 / VBOUT1 / VBOUT2
output waveform
PWMSW input voltage
Voltage Conditions
Measuring Pin
Status
VPWMSWH / VPWMSWL
12 V
PWMSW
2.2 V
26 kHz
PWMSW
0.6 V
52 kHz
0V
TB
TB
tPWM
t[µs]
PWM frequency fPWM
Measure the cycle time of output voltage pulses and obtain
the value from the following formula.
fPWM = 1 / tPWM
Pulse blanking time TB
Measure the low-level time of voltage output.
2008-04-11
Established
214406601908040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
20
Electrical Characteristics Test Procedures (continued)
3. Test Circuit 3
1) High-level output saturation voltage VOH
2) Low-level output saturation voltage VOL
5V
VPHA1
0V
5V
VPHB1
0V
24 V
(a)
VAOUT1 12 V
(f)
0V
24 V
VAOUT2 12 V
(b)
(e)
0V
24 V
VBOUT1 12 V
(c)
(h)
0V
24 V
(d)
VBOUT2 12 V
(g)
0V
Conditions
C
No.
Measuring Pin
1
2
Status
S9
IIN
AOUT1/AOUT2
BOUT1/BOUT2
AOUT1/AOUT2/BOUT1/BOUT2
= S4 / S3 / S2 / S1
–0.5 A
Measure the AOUT1, AOUT2, BOUT1,
and BOUT2 voltage at (a) to (d) above.
AOUT1/AOUT2
BOUT1/BOUT2
AOUT1/AOUT2/BOUT1/BOUT2
= S4 / S3 / S2 / S1
0.5 A
Measure the AOUT1, AOUT2, BOUT1,
and BOUT2 voltage at (e) to (h) above.
4. Test Circuit 4
3) Flywheel diode voltage
VDI
C
No.
Measuring Pin
S9
3
AOUT1
4
Apply ±0.5 A to IIN, and measure the VAOUT1.
3
AOUT2
3
Apply ±0.5 A to IIN, and measure the VAOUT2.
3
BOUT1
2
Apply ±0.5 A to IIN, and measure the VBOUT1.
3
BOUT2
1
Apply ±0.5 A to IIN, and measure the VBOUT2.
IIN
2008-04-11
Established
214406602008040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
21
Technical Data
y Circuit diagrams of the input/output part and pin function descriptions
Note) The characteristics listed below are reference values based on the IC design and are not guaranteed.
Pin
No.
Waveform
and voltage
Internal circuit
Impedance
Description
16
3k
3k
3
5
7
9
11
13
100k
―
Pin3 BOUT2
7 BOUT1
9 AOUT2
13 AOUT1
―
Pin3 : Phase B motor drive output 2
5 : Phase B current detection
7 : Phase B motor drive output 1
9 : Phase A motor drive output 2
11 : Phase A current detection
13 : Phase A motor drive output 1
―
Pin16 : Charge Pump circuit output
17 : Charge Pump capacitor
connection 2
Pin5 RCSB
11 RCSA
100k
4k
16
17
150k
―
BC2
17
125
VPUMP
16
2008-04-11
Established
214406602108040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
22
Technical Data (continued)
y Circuit diagrams of the input/output part and pin function descriptions (continued)
Note) The characteristics listed below are reference values based on the IC design and are not guaranteed.
Pin
No.
Waveform
and voltage
Internal circuit
Impedance
Description
150
18
BC1
―
―
Pin18 : Charge Pump capacitor
connection 1
18
200
Pin19 VREFA
20 VREFB
19
20
―
40k
50 kΩ
Pin19 : Phase A torque reference
voltage input
20 : Phase B torque reference
voltage input
4k
3.98k
15.91k
10k
2008-04-11
Established
214406602208040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
23
Technical Data (continued)
y Circuit diagrams of the input/output part and pin function descriptions (continued)
Note) The characteristics listed below are reference values based on the IC design and are not guaranteed.
Pin
No.
Waveform
and voltage
21
―
Internal circuit
Impedance
Pin21 S5VOUT
―
Description
Pin21 : Internal reference voltage
(5 V output)
21
2k
102k
Pin22 STBY
22
51.5k
22
―
154.5 kΩ
Pin22 : Standby setting
103k
2008-04-11
Established
214406602308040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
24
Technical Data (continued)
y Circuit diagrams of the input/output part and pin function descriptions (continued)
Note) The characteristics listed below are reference values based on the IC design and are not guaranteed.
Pin
No.
Waveform
and voltage
Internal circuit
Impedance
Description
Pin24 PWMSW
24
4k
―
200k
200 kΩ
Pin24 : PWM frequency selection
input
100 kΩ
Pin25 : Phase A phase selection input
26 : Phase B phase selection input
50k
Pin 25 PHA1
26 PHB1
25
26
―
4k
100k
50k
2008-04-11
Established
214406602408040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
25
Technical Data (continued)
y Circuit diagrams of the input/output part and pin function descriptions (continued)
Note) The characteristics listed below are reference values based on the IC design and are not guaranteed.
Pin
No.
Waveform
and voltage
27
28
29
30
31
Internal circuit
Impedance
Pin27 IN0
28 IN1
29 IN2
30 IN3
31 ENABLEA
―
4k
Description
―
Pin27 : Phase A output torque
control 1
28 : Phase A output torque
control 2
29 : Phase B output torque
control 1
30 : Phase B output torque
control 2
31 : Phase A/B start/stop signal
input
―
Pin32 : VBE monitor
100k
800
32
32
―
Pin32 TJMON
S5VOUT (Pin21)
VM(Pin1, Pin15)
Sym
bols
―
Diode
―
―
Zener diode
Ground
2008-04-11
Established
214406602508040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
26
Technical Data
y control mode
1. Truth table
1) Control/Charge pump circuit
STBY
ENABLE
Control/Charge pump circuit
Output transistor
High
—
OFF
OFF
Low
High
ON
OFF
Low
Low
ON
ON
ENABLEA
PHA1/PHB1
AOUT1/BOUT1
AOUT2/BOUT2
Low
High
High
Low
Low
Low
Low
High
High
—
OFF
OFF
2) Output polarity
3) Output current of 2-phase excitation / half step / 1-2 phase excitation
IN0
IN2
A-ch. Output Current
B-ch. Output Current
Low
Low
(VREF / 5) × (1 / Rs)
(VREF / 5) × (1 / Rs)
High
Low
0
(VREF / 5) × (1 / Rs)
Low
High
(VREF / 5) × (1 / Rs)
0
High
High
(VREF / 5) × (1 / Rs) × (2 / 3) (VREF / 5) × (1 / Rs) × (2 / 3)
Notes) Rs : current detection region
IN1 = IN3 = Low level
4) Output current of W1-2 phase excitation
A-ch. output
IN0
IN2
IN1
A-ch. Output Current
Low
Low
Low
(VREF / 5) × (1 / Rs)
Low
Low
High
(VREF / 5) × (1 / Rs) × (1 / 3)
High
Low
Don't care
0
Low
High
Low
(VREF / 5) × (1 / Rs)
High
High
Low
(VREF / 5) × (1 / Rs) × (2 / 3)
IN0
IN2
IN3
B-ch. Output Current
Low
Low
Low
(VREF / 5) × (1 / Rs)
Low
Low
High
(VREF / 5) × (1 / Rs) × (1 / 3)
High
Low
Low
(VREF / 5) × (1 / Rs)
Low
High
Don't care
0
High
High
Low
(VREF / 5) × (1 / Rs) × (2 / 3)
Note) Rs : current detection region
B-ch. output
Note) Rs : current detection region
2008-04-11
Established
214406602608040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
27
Technical Data (continued)
y control mode (continued)
2. Output wave
1) Drive of 2-phase excitation (4steps sequence)
(IN0 to IN3 = Low)
1
2
3
4
1
A-ch.
Motor current
B-ch.
Motor current
A-ch.
Motor current
flow-in flow-out
VPHB1
B-ch.
Motor current
flow-in flow-out
VPHB1
flow-in flow-out
VPHA1
flow-in flow-out
VPHA1
FWD
2
3
4
REV
2008-04-11
Established
214406602708040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
28
Technical Data (continued)
y control mode (continued)
2. Output wave (continued)
2) Drive of half step (8-steps sequence)
(IN1 = IN3 = Low)
(Ex.)
1 2 3 4 5 6 7 8
1 2 3 4 5 6 7 8
VPHB1
VPHB1
VIN0
VIN0
VIN2
VIN2
flow-out
B-ch.
Motor current
flow-in
flow-out
B-ch.
Motor current
A-ch.
Motor current
flow-in
A-ch.
Motor current
flow-in flow-out
VPHA1
flow-in flow-out
VPHA1
FWD
REV
REV
FWD
2008-04-11
Established
214406602808040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
29
Technical Data (continued)
y control mode (continued)
2. Output wave (continued)
3) Drive of 1-2 phase excitation (8-steps sequence)
(IN1 = IN3 = Low)
(Ex.)
1
2
3
4
5
6
7
8
1
VPHB1
VPHB1
VIN0
VIN0
VIN2
VIN2
5
6
7
8
flow-out
B-ch.
Motor current
4
flow-in
flow-out
B-ch.
Motor current
A-ch.
Motor current
flow-in
A-ch.
Motor current
3
flow-in flow-out
VPHA1
flow-in flow-out
VPHA1
2
FWD
REV
REV
FWD
2008-04-11
Established
214406602908040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
30
Technical Data (continued)
y control mode (continued)
2. Output wave (continued)
4)
Drive of W1-2 phase excitation (16-steps sequence)
1 2 3 4 5 6 7 8 9 101112 13 1415 16
1 2 3 4 5 6 7 8 9 1011 12 131415 16
VIN0
VIN0
VIN1
VIN1
VIN2
VIN2
VIN3
VIN3
A-ch.
Motor current
B-ch.
Motor current
A-ch.
Motor current
flow-in flow-out
VPHB1
B-ch.
Motor current
flow-in flow-out
VPHB1
flow-in flow-out
VPHA1
flow-in flow-out
VPHA1
FWD
REV
REV
FWD
2008-04-11
Established
214406603008040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
31
Usage Notes
y Special attention and precaution in using
1. This IC is intended to be used for general electronic equipment and driving stepping motor.
Consult our sales staff in advance for information on the following applications:
x Special applications in which exceptional quality and reliability are required, or if the failure or malfunction of this IC may
directly jeopardize life or harm the human body.
x Any applications other than the standard applications intended.
(1) Space appliance (such as artificial satellite, and rocket)
(2) Traffic control equipment (such as for automobile, airplane, train, and ship)
(3) Medical equipment for life support
(4) Submarine transponder
(5) Control equipment for power plant
(6) Disaster prevention and security device
(7) Weapon
(8) Others : Applications of which reliability equivalent to (1) to (7) is required
2. Pay attention to the direction of LSI. When mounting it in the wrong direction onto the PCB (printed-circuit-board), it might
smoke or ignite.
3. Pay attention in the PCB (printed-circuit-board) pattern layout in order to prevent damage due to short circuit between pins. In
addition, refer to the Pin Description for the pin configuration.
4. Perform a visual inspection on the PCB before applying power, otherwise damage might happen due to problems such as a solderbridge between the pins of the semiconductor device. Also, perform a full technical verification on the assembly quality, because
the same damage possibly can happen due to conductive substances, such as solder ball, that adhere to the LSI during
transportation.
5. Take notice in the use of this product that it might break or occasionally smoke when an abnormal state occurs such as output pinVM short (Power supply fault), output pin-GND short (Ground fault), or output-to-output-pin short (load short) .
And, safety measures such as an installation of fuses are recommended because the extent of the above-mentioned damage and
smoke emission will depend on the current capability of the power supply.
Pay special attention to the following pins so that they are not short-circuited with the VM pin, ground pin, other output pin, or
current detection pin.
(1) AOUT1 (Pin 13), AOUT2 (Pin 9), BOUT1 (Pin 7), BOUT2 (Pin 3)
(2) BC2 (Pin 17), VPUMP (Pin 16)
(3) VM1 (Pin 1), VM2 (Pin 15), S5VOUT(Pin 21)
(4) RCSA (Pin 11), RCSB (Pin 5)
The higher the current capacity of power supply is, the higher the possibility of the above destruction or smoke generation.
Therefore, it is recommended to take safety countermeasures, such as the use of a fuse.
6. When using the LSI for new models, verify the safety including the long-term reliability for each product.
7. When the application system is designed by using this LSI, be sure to confirm notes in this book.
Be sure to read the notes to descriptions and the usage notes in the book.
2008-04-11
Established
214406603108040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
32
Usage Notes (continued)
y Notes of Power LSI
1. Perform thermal design work with consideration of a sufficient margin to keep the power dissipation based on supply voltage,
load, and ambient temperature conditions.
(The IC is recommended that junctions are designed below 70% to 80% of Absolute Maximum Rating.)
2. The protection circuit is incorporated for the purpose of securing safety if the IC malfunctions.
Therefore, design the protection circuit so that the protection circuit will not operate under normal operating conditions. The
temperature protection circuit, in particular, may be destructed before the temperature protection circuit operates if the area of
safety operation of the device or the maximum rating is exceeded instantaneously due to the short-circuiting between the output
pin and VM pin or a ground fault caused by the output pin and ground pin.
3. Unless specified in the product specifications, make sure that negative voltage or excessive voltage are not applied to the pins
because the device might be damaged, which could happen due to negative voltage or excessive voltage generated during the ON
and OFF timing when the inductive load of a motor coil or actuator coils of optical pick-up is being driven.
4. The product which has specified ASO (Area of Safe Operation) should be operated in ASO.
5. Verify the risks which might be caused by the malfunctions of external components.
6. Set the value of the capacitor between the VPUMP and GND pins so that the voltage on the VPUMP (Pin 16) will not exceed
43 V in any case regardless of whether it is a transient phenomenon or not while the motor standing by is started.
7. This IC employs a PWM drive method that switches the high-current output of the output transistor. Therefore, the IC is apt to
generate noise that may cause the IC to malfunction or have fatal damage. To prevent these problems, the power supply must be
stable enough. Therefore, the capacitance between the S5VOUT and GND pins must be 0.1 µF and the one for power supply
stabilization between the VM and GND pins must be a minimum of 47 µF (recommendation) and as close as possible to the IC so
that PWM noise will not cause the IC to malfunction or have fatal damage.
2008-04-11
Established
214406603208040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
33
Usage Notes (continued)
8. Pulse blanking time
In order to prevent mistakes in current detection resulting noise, this IC is provided with a pulse blanking time of 0.75 µs (typ.).
The motor current will not be less than the current determined by the pulse blanking time. Pay utmost attention at the time of
minute current control.
Fig.1 shows the relationship between the pulse blanking time and minimum current value.
The increase or decrease in the motor current is determined by a load and a resistance of a internal winding in the motor, induced
voltage, and PWM on-duty.
Set current
Normal operation
Minimum current
Set current
The set current is
less than the
minimum current.
TB
1/fPWM
Fig. 1
RCS current waveform
fPWM : PWM frequency
TB
: Pulse blanking time
(Refer to No. 28 to No. 30 of
Electrical Characteristics)
9. VREF voltage
When VREF voltage is set to lower, an error detection of motor current might be caused by noise because Comp threshold voltage
(No.31, 32, 33 in the “Electrical Characteristics” / P.10) becomes low. Use this IC after confirming there is no error detection
when VREF voltage is less than the set value.
10. Notes on the interface
Absolute maximum ratings of Pin 19, 20, 22 and Pin 24 to Pin31 are –0.3 V to 6 V. When the current setting for a motor is large
and the lead line of GND is long, the potential of GND in this LSI will rise. Take notice that there is a possibility that potential of
the interface pin is negative compared with that of GND in this LSI even if 0 V is applied to the interface pin. At that time, pay
attention so that the input voltage of these pins might not exceed the values which are set in the allowable voltage range.
2008-04-11
Established
214406603308040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
34
Usage Notes (continued)
11. Notes at the clear of standby mode / the rise of VM supply
In this LSI, all phases are forced OFF for about 300 µs (typ.) after the clear of standby mode or the rise of VM supply. (See the
following figure.) This is why the operation mode can be started after the charge pump circuit voltage boosts efficiently at shift to
operation mode from standby mode / VM supply = OFF, when the charge pump operation stops. Therefore, the excitation patterns
input after the forced all phase OFF period are effect.
When the charge pump circuit rises slowly owing to that the capacitance value between VPUMP-GND is made large etc. and the
booster voltage cannot rise efficiently for the forced all phase OFF, the IC might overheat. In this case, clear the standby mode at
ENABLE = High or restart after VM supply is turned ON, the booster voltage rises efficiently, and ENABLE is shifted to Low.
The thermal protection is same operation as that at VM supply OFF.
[In case that standby mode is cleared]
STBY
High
Standby
Standby
Motor output
All phase OFF
Low
Standby mode clear
Forced all phase OFF
Start-up (at ENABLE = Low)
All phase OFF (at ENABLE = High)
About 300 µs(typ)
[In case that VM supply rises]
After VM supply exceeds threshold VM = 8.8 V(typ), all phases are forced OFF for about 300 µs(typ).
VM
Motor output
Low
High
All phase OFF
Forced all phase OFF
(Low voltage protection)
Start-up (at ENABLE = Low)
All phase OFF (at ENABLE = High)
About 300 µs(typ)
2008-04-11
Established
214406603408040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
35
Usage Notes (continued)
PHA1/PHB1
current [µA]
PHA1/PHB1電流[uA]
12. PWMSW, PHA1, PHB1 pins
Under conditions where VM power supply is shutdown in standby mode (STBY pin = High level), when applying approx. 0.7 V
(TYP) or more to PWMSW (Pin 24), PHA1 (Pin 25), PHB1 (Pin 26), the current flows into above-mentioned pins owing to
parasitic elements in the LSI and the current flowing into the above-mentioned pins varies from the current determined by pull
down resistance. In addition, the current flowing into PHA1/PHA2 is 341.4 µA (impedance = approx. 9.1 kΩ) at 3.3 V, while that
into PWMSW is 323.2 µA (impedance = approx. 9.7 kΩ) at 3.3 V. There is no problem that the voltage up to rating is applied to
the above-mentioned pins. However, it is recommended to set the voltage applied to the above-mentioned to 0.7 V or less at
shutdown of VM power supply in standby mode.
Also, in case of the voltage of above-mentioned pins > S5VOUT(Pin 21) – 0.2 V at power on to VM power supply, the current
flows owing to parasitic elements in the LSI, and the current flowing into the above-mentioned pins varies (refer to Fig. 2, 3).
As the same as at standby, there is no problem that the voltage up to rating is applied to the above-mentioned pins. However, it is
recommended to set the voltage applied to the above-mentioned pins to 4.3 V or less.
S5VOUT = 4.5 V
400
300
S5VOUT = 5.0 V
200
S5VOUT = 5.5 V
100
Z = 200 kΩ
0
0
1
2
3
4
5
6
ZZ=≅約4.7
kΩ
4.7 kΩ
PHA1/PHB1=4.3V
_____
PHA1/PHB1 voltage [V]
PWMSW
current [µA]
PWMSW電流[uA]
Fig. 2
Input impedance of PHA1/PHB1 at VM power supply power on
400
350
S5VOUT = 4.5 V
300
250
S5VOUT = 5.0 V
200
150
100
S5VOUT = 5.5 V
Z = 200 kΩ
50
0
Z
kΩ
Z=≅約4.7
4.7 kΩ
0
Fig. 3
1
2
3
4
5
PWMSW=4.3V
PWMSW電圧[V]
PWMSW
voltage [V]
6
Input impedance of PWMSW at VM power supply power on
2008-04-11
Established
214406603508040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
36
Usage Notes (continued)
13. In the case of measuring the chip temperature of the IC, measure the voltage of TJMON (Pin 32) and presume chip temperature
from following data. Use the following data as reference data. Before applying the IC to a product, conduct a sufficient reliability
test of the IC along with the evaluation of the product with the IC incorporated.
The temperature characteristic of TJMON
VBE[V]
∆VBE / ∆temp = –1.82 [mV / °C]
Temp[°C]
0
150
14. Power supply start up speed and shutdown speed
Set the rising speed to 0.1 V/µs or less for VM voltage at power on to VM (Pin 1, 15).
It is recommended that the falling speed of VM voltage is set to 0.1 V/µs or less on condition of STBY = High or ENABLE = High
at shutdown. In case of shutdown at motor drive (STBY = Low and ENABLE = Low), the motor current might flow back to the
power supply and supply voltage might not fall stably.
If the rising or falling speed of power supply is too high, which might cause malfunctions or destruction on the IC. In this case,
perform the long-term reliability test and confirm the sufficient evaluation for products.
Power Supply
VM
Rising edge every 0.1 V/µs or less
Falling edge every 0.1 V/µs or less
time
2008-04-11
Established
214406603608040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
AN44066A
Product Standards
Total Pages
Page
37
37
Usage Notes (continued)
15. RCS line
Take consideration in the following figure and the points and design PCB pattern.
(1) Point 1
Design so that the wiring to the current detection pins of this IC (RCSA, RCSB) should be thick and short in order to lower
the impedance. This is why the current cannot be detected correctly owing to the wiring impedance, and the current might
not be supplied to a motor sufficiently.
(2) Point 2
Design so that the wiring between the current detection resistor and the connector GND (Point 2 in the following figure)
should be thick and short in order to lower the impedance. As the same as Point 1, a sufficient current might not be supplied
due to the wiring impedance.
In addition, if there is a common impedance between GND and RCSA or RCSB, a peak detection may be detected by
mistake. Therefore, connect the wiring between GND and RCSA or RCSB independently.
(3) Point 3
Connect the GND of this IC to the connector on PCB independently. Separate the wiring which is a large current line
(Point 2) from that of GND, and make these wirings with one-point shorted at the connector as the following figure. That
can minimize the fluctuation of GND.
Current limit
detection resister
Point 2
Point 1
(A)
Connector GND
RCSA/RCSB
Motor
IC
Point 3
GND
16. A high current flows into this IC. Therefore, the common impedance of the PCB pattern cannot be ignored. Take the following
points into consideration and design the PCB pattern of the motor.
A high current flows into the line between the VM1 (Pin 1) and VM2 (Pin 15) pins. Therefore, noise is generated with ease at the
time of switching due to the inductance (L) of the line, which may result in the malfunctioning or destruction of the IC. (Fig. 4)
As shown in the circuit diagram on the right-hand side, the escape way of the noise is secured by connecting a capacitor to the
connector close to the VM pin of the IC. This makes it possible to suppress the direct VM pin voltage of the IC. Make the settings
as shown in the circuit diagram on Fig. 5 as much as possible.
Low spike amplitude due to
the capacitance between
the VM pin and ground pin
VM
VM
L
L
VM
VM
GND
IC
GND
IC
C
C
RCS
GND
RCS
GND
Fig. 4
Deprecated PCB
Fig. 5
Recommended PCB
2008-04-11
Established
214406603708040
Revised
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
Total Pages
Page
6
1
Regulations No. : SC3S1711
PACKAGE STANDARDS
Package Code
SSOP032-P-0300B
Semiconductor Company
Matsushita Electric Industrial Co., Ltd.
Established by
Applied by
Checked by
Prepared by
K.Komichi
H.Yoshida
M.Okajima
M.Itoh
Exclusive use for AN44066A
Established: 2008-01-08
Revised
: -
PACKAGE STANDARDS
SSOP032-P-0300B
Total Pages
Page
6
2
1. Outline Drawing
Unit:mm
Body Material
: Epoxy Resin
Lead Material
: Cu Alloy
Lead Finish Method : SnBi Plating
Exclusive use for AN44066A
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
Established: 2008-01-08
Revised
: -
PACKAGE STANDARDS
SSOP032-P-0300B
Total Pages
Page
6
3
2. Package Structure (Technical Report : Reference Value)
Chip Material
Si
1
Leadframe material
Cu alloy
2
Inner lead surface
Ag plating
3
Outer lead surface
SnBi plating
4
Chip mount
Wirebond
Molding
Mass
Resin adhesive method
Material
Adhesive material
Method
Thermo-compression bonding
Material
Au
Method
Transfer molding
Material
Epoxy resin
5
6
7
250 mg
3
4
Method
2
1
6
5
7
Exclusive use for AN44066A
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
Established: 2008-01-08
Revised
: -
PACKAGE STANDARDS
SSOP032-P-0300B
Total Pages
Page
6
4
3. Mark Drawing
Brand
Mark
○
Product Name
Date Code
Exclusive use for AN44066A
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
Established: 2008-01-08
Revised
: -
PACKAGE STANDARDS
SSOP032-P-0300B
Total Pages
Page
6
5
4. Power Dissipation (Technical Report)
1.400
1.290
Mount On PWB
［GlassEpoxy:50X50X0.8t(mm)］
Rth(j-a) = 96.9 ºC/W
1.200
Power Dissipation(Ｗ)
1.000
0.800
0.668
0.600
Without PWB
Rth(j-a) = 187.1 ºC/W
0.400
0.200
0.000
0
25
50
75
100
125
150
o
Ambient Temperature( C )
Exclusive use for AN44066A
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
Established: 2008-01-08
Revised
: -
PACKAGE STANDARDS
SSOP032-P-0300B
Total Pages
Page
6
6
5. Power Dissipation（Supplementary Explanation）
[Experiment environment]
Power Dissipation（Technical Report）is a result in the experiment environment of SEMI standard
conformity.
（Ambient air temperature (Ta) is 25 degrees C）
[Supplementary information of PWB to be used for measurement]
The supplement of PWB information for Power Dissipation data (Technical Report）are shown
below.
Indication
Total Layer
Resin Material
Glass-Epoxy
1-layer
FR-4
4-layer
4-layer
FR-4
[Notes about Power Dissipation（Thermal Resistance）]
Power Dissipation values（Thermal Resistance）depend on the conditions of the surroundings, such as
specification of PWB and a mounting condition , and a ambient temperature. (Power Dissipation (Thermal
Resistance) is not a fixed value.)
The Power Dissipation value（Technical Report）is the experiment result in specific conditions (evaluation
environment of SEMI standard conformity) ,and keep in mind that Power Dissipation values (Thermal
resistance) depend on circumference conditions and also change.
[Definition of each temperature and thermal resistance]
Ta ：Ambient air temperature
※The temperature of the air is defined at the position where the convection,
radiation, etc. don’t affect the temperature value, and it’s separated from the heating
elements.
Tc ：It’s the temperature near the center of a package surface. The package surface is
defined at the opposite side if the PWB.
Tj ：Semiconductor element surface temperature (Junction temperature.)
Rth(j-c)：The thermal resistance (difference of temperature of per 1 Watts) between a
semiconductor element junction part and the package surface
Rth(c-a)：The thermal resistance (difference of temperature of per 1 Watts) between the
package surface and the ambient air
Rth(j-a)：The thermal resistance (difference of temperature of per 1 Watts) between a
semiconductor element junction part and the ambient air
Ta
[Definition formula]
Tj={Rth(j-c)+Rth(c-a)}×P+Ta
Rth(c-a)
=Rth(j-a)×P+Ta
Rth(j-a)
Tc
Tj
Rth(j-c) =
Tj-Tc
P
(℃/W)
Rth(c-a) =
Tc-Ta
P
(℃/W)
Rth(j-a) =
Tj-Ta
P
(℃/W)
Rth(j-c)
PWB
Package
Semiconductor element
= Rth(j-c)＋Rth(c-a)
P:power(W)
Fig1. Definition image
Exclusive use for AN44066A
Semiconductor Company, Matsushita Electric Industrial Co., Ltd.
Established: 2008-01-08
Revised
: -
Recommended
Soldering Conditions
Total pages
page
2
1
Product name : AN44066A-VF
Package : SSOP032-P-0300B
１．Recommended Soldering Conditions
In case that the semiconductor packages are mounted on the PCB, the soldering should be
performed under the following conditions.
① Reflow soldering
Reflow peak temp. :
℃
260
240
220
200
180
160
140
max. 260 ℃
No． mark
tp
a
T1
t1
contents
value
Tp 260 ℃
255 ℃
1
T1 Pre-heating temp.
2
ｔ１
Pre-heating temp. hold time 60 s～120 s
220 ℃
3
a
Rising rate
b
tw
Time
150 ℃～180 ℃
2 ℃/s～5 ℃/s
4
Tp Peak temp.
255 ℃+5 ℃､-0 ℃
5
tp
Peak temp. hold time
10 s±3 s
6
tw
High temp. region hold time within 60 s (≧220 ℃)
7
b
Down rate
2 ℃/s～5 ℃/s
8
-
Number of reflow
within 2 times
＊Peak temperature : less than 260 ℃
＊Temperature is measured at package surface point
② Wave soldering (Flow soldering)
＊Temp. of solder : 260 ℃ or less
＊Soak time : within 5 s
＊Number of flow : only 1 time
③ Manual soldering
＊Iron Temperature : 350 ℃ or less (Device lead temperature : 270 ℃､10 s max.)
＊Soldering time : within 3 s
＊Number of manual soldering : only 1 time
No. 11-183
2012/3/7
Prepared
Revised
Industrial Devices Company, Panasonic Corporation
Recommended
Soldering Conditions
Total pages
page
2
2
2．Storage environment after dry pack opening
Open dry pack
① Storage environment kept up to reflow soldering
(at 30 ℃/70 %RH max. , within 336 h)
② Storage environment kept up to wabe soldering
(at 30 ℃/70 %RH max. , within 336 h)
Bake at 125 ℃
with 15 h to 25 h
Soldering
When the storage time exceeds
( ① 336 h or ② 336 h )
*Please refer to the following when
doing at the low temperature bake.
※ Because the taping and the magazine materials are not the heat-resistant materials,
the bake at 125℃ cannot be done.
Therefore, please solder everything or control everything in the rule time.
Please keep them in an equal environment with the moisture-proof packaging or dry box.
(Temperature: room temperature, relative humidity: 30% or less. )
To control storage time, when bake in the taping and the magazine is necessary, it is
necessary for each type to set a bake condition. Please inquire of our company.
☆ AN44066A-VF limitation, low temperature bake condition ： 40 ℃ / 25 %RH or less / 192 h
3．Note
① Storage environment conditions: keep the following conditions Ta=5 ℃～30 ℃､RH=30 %～70 %.
② Storage period before opening dry pack shall be 1year from a shipping day under Ta=5 ℃～30 ℃､
RH=30 %～70 %. When the storage exceeds, Bake at 125 ℃ with 15 h to 25 h.
③ Baking cycle should be only one time.
Please be cautious of solderability at baking.
④ In case that use reflow two times, 2nd reflow must be finished within 336 hours.
⑤ Remove flux sufficiently from product in the washing process.
( Flux : Chlorineless rosin flux is recommended.)
⑥ In case that use ultrasonic for product washing,
There is the possibility that the resonance may occur due to the frequency and shape of PCB.
It may be affected to the strength of lead. Please be cautious of this matter.
No. 11-183
2012/3/7
Prepared
Revised
Industrial Devices Company, Panasonic Corporation
Recommended
Land Pattern
Total pages
page
1
1
2009.03.09
Prepared
Revised
Semiconductor Company, Panasonic Corporation
Packing Specification
Total pages
page
3
1
Specifications of packing by the embossment tape
( Specifications for dampproof packing of the reel without the inner carton)
Embossment carrier tape
Top cover tape
C3 Label (Sampl)
Reel
AN12345A-NB
(3N)AN12345A-NB
3000pcs.
1000
(3N)2 10N112200-NB
108010
1.23-45
AN12345A-NB
AN12345A-NB
410N112300 2058
USP4B42516
AN12345A-NB
12345678 3000 23456789 3000 34567890 3000
307 150000
45678901 3000
MADE IN JAPAN
Panasonic M
Desiccant
Laminated aluminum bag
Corrugated cardboard for partition
Inner frame
Outer box
C3 Label (Sampl)
AN12345A-NB
(3N)AN12345A-NB
90000pcs.
1000
(3N)2 10N112200-NB 108010
AN12345A-NB
410N112300 2058
1.23-45
AN12345A-NB
USP4B42516
AN12345A-NB
12345678 3000 23456789 3000 34567890 3000
307
150000
Panasonic M
45678901 3000
MADE IN JAPAN
2009.03.09
Prepared
Revised
Semiconductor Company，Panasonic Corporation
Packing Specification
Total pages
page
3
2
Package : SSOP032-P-0300B
1
Unit : mm
Packing
1) Tape
VF
2) Reel
Draw out direction
Emboss
carrier tape
25.5
330
220
3) Packing case
360
360
2
Packing quantity
Form
IC quantity
Contents
Reel
2000 Pcs
Packing case
10000 Pcs
Reel × 1Pcs
Reel
×
５Pcs
2009.03.09
Prepared
Revised
Semiconductor Company，Panasonic Corporation
Packing Specification
Package : SSOP032-P-0300B
Total pages
page
3
3
Unit : mm
2009.03.09
Prepared
Revised
Semiconductor Company，Panasonic Corporation
Industrial Devices Company, Panasonic Corporation
1 Kotari-yakemachi, Nagaokakyo City, Kyoto 617-8520, Japan
Tel:075-951-8151
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
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AN44066A-VF