Application Notes

AN11024
SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
Rev. 1 — 24 March 2011
Application note
Document information
Info
Content
Keywords
LNA, 2.33 GHz, BFU690, SDARS
Abstract
This application note provides circuit, layout, BOM and performance
information for 2.33GHz LNA equipped with NXP Semiconductors
BFU690 wideband transistor
AN11024
NXP Semiconductors
SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
Revision history
Rev
Date
Description
v.1
20110324
initial version
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
AN11024
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SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
1. Introduction
The BFU690 is a wideband Silicon Germanium Amplifier transistor intended for high
speed, low noise applications. It is designed to be used for LNA applications such as
GPS, satellite radio, cordless phone and wireless LAN. The BFU690 comes in a
SOT343F package providing 2 emitter pins for better grounding.
The BFU690 is ideal in all kind of applications where cost matters. It also gives the
designer flexibility in his design work.
The BFU690 SiGe low noise transistor is shown here in a Satellite Digital Audio Service
(SDARS) active antenna LNA application. It is intended for use as the 2nd stage in a
3 stage SIRIUS LNA chain.
NXP
BFU730
NXP
Bandpass Filter
BFU690
G = 15.3 dB
IDC = 30 mA
NF = 1.47 dB
P1dB = +13.9 dBm
NXP
BFU
019aab735
2320-2332.5 (SIRIUS, 3 stages)
Fig 1.
Overview of SDARS active antenna LNA
The 2.33 GHz LNA evaluation board (EVB) is designed to evaluate the performance of
the BFU690 transistor applied as the 2nd stage in a 3 stage SIRIUS LNA chain. In this
document, the application diagram, board layout, bill of material, and some typical results
are given.
The evaluation board is shown in Figure 2
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SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
019aab736
Fig 2.
BFU690, 2.33 GHz LNA evaluation board
2. General description
The BFU690 is a NPN silicon germanium microwave transistor for high speed, low noise
applications in a plastic, 4-pin dual-emitter SOT343F package. Table 1 shows a summary
of the transistor performance in terms of noise and gain.
Table 1.
BFU690 performance in terms of noise and gain measured at VCE = 2 V;
IC = 25 mA
Frequency (GHz)
Noise figure (dB)
Associated gain (dB)
1.5
1.13
19.5
2.4
1.51
15.7
Table 2.
BFU690 pinning information
Pin
Description
1
emitter
2
base
3
emitter
4
collector
Simplified outline
3
Graphic symbol
4
4
2
1, 3
2
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SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
3. Application board
The BFU690 2.33GHz EVB simplifies the evaluation of the BFU690 wideband transistor,
for this frequency range. The EVB enables testing of the device performance and requires
no additional support circuitry. The board is fully assembled with the BFU690, including
input and output matching, to optimize the performance. The input match was a
compromise between the best noise figure and a low input return loss. The board is
mounted with signal input and output SMA connectors for connection to RF test
equipment:
3.1 Application circuit
The application diagram as supplied on the evaluation board is shown in Figure 3.
VCC = 3.3 V
X3
R3
C6
R1
R2
C4
C3
C5
L3
RF out
C2
X2
L2
RF in
C1
BFU690
X1
L1
L4
019aab738
Fig 3.
Evaluation board circuit diagram
3.2 Board layout
Figure 2 shows the board layout with components.
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SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
019aab739
Fig 4.
Component layout for the BUF690 2.33 GHz evaluation board
3.3 PCB layout
A good PCB Layout is an essential part of an RF circuit design. The EVB of the BFU690
can serve as a guideline for laying out a board using either the BFU690. Use controlled
impedance lines for all high frequency inputs and outputs. Bypass supply voltage VCC with
decoupling capacitors, preferable located as close as possible to the device. For long bias
lines it may be necessary to add decoupling capacitors along the line further away from
the device. Proper grounding of the GND pin is also essential for the performance. Either
connect the GND pin directly to the ground plane or through vias, or do both.
The EVB is made of FR4 material using the stack shown in Figure 5
17 µm Cu
0.25 mm FR4 Critical
17 µm Cu
0.50 mm FR4 only for
mechanical rigidity of PCB
17 µm Cu
0.25 mm FR4 only for
mechanical rigidity of PCB
17 µm Cu
019aab740
Material supplier Isola Duraver;r = 4.6 to 4.9; T = 0.02
Fig 5.
AN11024
Application note
Stack of PCB material
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SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
3.4 Bill of materials
Table 3.
Bill of materials
Component
Description
Footprint
Value
Manufacturer
Comment
C1, C2
capacitor
0402
1.8 pF
Murata GRM1555
DC blocking
C3, C5
capacitor
0402
8.2 pF
Murata GRM1555
LF decoupling
C4, C6
capacitor
0402
10 nF
Murata GRM1555
LF decoupling
L1
inductor
0402
1.6 nH
Coilcraft 0603CS; high Q, low Rs
input matching
L2
inductor
0402
12 nH
Murata/LQW15A; high Q, low Rs
input matching /DC bias
L3
inductor
0402
3.9 nH
Murata/LQW15A
input matching
L4
inductor
0402
4.1 nH
Murata/LQW15A
input matching /DC bias
R1
resistor
0402
9.1 k
various
bias setting
R2
resistor
0402
22 
various
stability
R3
resistor
0402
15 
various
bias setting temp stability
X1, X2
SMA
RF connector
-
-
Johnson, End Launch SMA
142-0701-841
RF input/ RF output
X3
DC header
-
-
Molex, PCB header, Right angle,
1 row, 3 way, Part no: 90121-0763
bias connector
4. Required equipment
In order to measure the evaluation board the following are necessary:
• DC power supply up to 60 mA at 3.3 V (up to 15 V for bias Control)
• RF signal generator capable of generating an RF signal at the 2.33 GHz operating
frequency
• RF spectrum analyzer covering as a minimum the 2.33 GHz operating frequency and
some of the harmonics (up to 8 GHz should be sufficient). Optional: a version with the
capability of measuring noise figure is convenient
• Amp meter to measure the supply current (optional)
• NetWork analyzer for measuring gain, return loss and reverse isolation
• Noise figure analyzer.
5. Connections and setup
The BFU690, 2.33 GHz EVB is fully assembled and tested. To operate the EVB and test
the device functions follow this step-by-step guide:
1. Connect the DC power supply to the VCC and GND terminals and set to 3.3 V.
2. Connect the RF signal generator and the spectrum analyzer to the RF input and the
RF output of the EVB respectively. Do not yet turn on the RF output of the signal
generator. Set it to 30 dBm output power at 2.33 GHz and set the spectrum analyzer
to 2.33 GHz center frequency with a reference level of 0 dBm.
3. Turn on the DC power supply and it should read approximately 30 mA.
4. Enable the RF output of the generator; the spectrum analyzer displays a tone of
2.33 GHz at approximately 14.7 dBm.
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SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
5. A NetWork Analyzer (NWA) can be used instead of a signal generator and spectrum
analyzer in order to measure both gain and input and output return losses.
6. For noise figure evaluation use either a noise figure analyzer or a spectrum analyzer
with noise option. The use of a 15 dB noise source, such as the Agilent 364B is
recommended. When measuring the noise figure of the evaluation board, any kind of
adaptors, cables etc, between the noise source and the EVB should be avoided, since
this affects the noise performance.
VCC
GND
RFin
RFout
019aab741
Fig 6.
Evaluation board showing its connections
6. Typical EVB results
Table 4.
Typical results measured on the evaluation board
T = 25 C; f = 2.33 GHz unless otherwise specified
AN11024
Application note
Symbol
Parameter
BFU690 EVB
Unit
NF
noise figure
1.47[1]
dB
Gp
power gain
15.3[1]
dB
IRL
input return loss
10
dB
ORL
output return loss
17
dB
isol(r)
reverse isolation
20.7
dB
Pi(1dB)
input power at 1 dB gain 0.48
compression
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SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
Table 4.
Typical results measured on the evaluation board …continued
T = 25 C; f = 2.33 GHz unless otherwise specified
Symbol
Parameter
BFU690 EVB
Unit
PL(1dB)
output power at 1 dB
gain compression
13.9
dBm
IP3i
input third order
intercept point
12.85
dBm
IP3o
output third order
intercept point
28.15
dBm
[1]
The NF and gain figures are measured at the SMA connectors of the EVB, so the connector and PCB
losses are not subtracted. If subtracted the NF will improve by approximately 0.1 dB.
6.1 Noise figure
019aab742
5
16
(1)
NF
G
4
14
3
12
2
10
(2)
1
8
0
6
2.290 Ghz
10.000 MHz/div
2.390 GHz
(RF)
2290 MHz to 2390 MHz.
Center of plot (x-axis) is 2333 MHz.
Ref = 62 dBm, SWT = 100 ms.
(1) Gain.
(2) NF.
Fig 7.
Noise figure plot
Table 5.
Noise figure tabular data
From Rohde & Schwarz FSU
Frequency list results
AN11024
Application note
RF (GHz)
NF (dB)
Noise temp (K)
Gain (dB)
2.290
1.456
115.508
15.758
2.300
1.445
114.499
15.699
2.310
1.445
114.486
15.601
2.320
1.450
114.944
15.468
2.330
1.468
116.673
15.297
2.340
1.499
119.495
15.124
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SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
Table 5.
Noise figure tabular data …continued
From Rohde & Schwarz FSU
Frequency list results
RF (GHz)
NF (dB)
Noise temp (K)
Gain (dB)
2.350
1.528
122.291
14.968
2.360
1.564
125.712
14.875
2.370
1.587
127.888
14.822
2.380
1.601
129.290
14.810
2.390
1.607
129.874
14.750
6.2 Gain compression test
The network analyzer is set to CW mode: e.g. set to a single frequency, with power
sweep. Input power is swept from 25 dBm to +5 dBm at 2332.5 MHz. The amplifier
reaches input 1 dB compression point (Pi(1dB)) at 0.48 dBm input power.
Output PL(1dB) = 0.48 dBm + 14.4 dB gain at PL(1dB) point  +13.9 dBm, or 24.5 mW
019aab744
50.00
30.00
(1)
(2)
10.00
(3)
-10.00
-30.00
-50.00
>Ch1: Start
-25.000 dBm
CW
2.33250
Stop
5.000 dBm
(1) Tr 3 b2/a1.1 LogM 10.00 dBm/0.00 dBm: 25.0000 dBm; 15.396 dB.
(2) Tr 3 b2/a1.1 LogM 10.00 dBm/ 0.00 dBm: 480.0000 mdBm; 14.432 dB.
(3) Tr 2 b2/1 LogM 10.00 dBm/ 0.00 dBm: 480.0000 mdBm; 13.902 dBm.
Fig 8.
AN11024
Application note
Gain compression test plot
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SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
6.3 Input return losses
6.3.1 Log Mag
019aab745
0.00
-4.00
-8.00
(2)
(1)
-12.00
-16.00
-20.00
>Ch1: Start 10.000 MHz
Stop 6.00000 Ghz
10 MHz to 6 GHz.
Tr 1 S11 LogM 2.000 dB/10.0 dB.
(1) 2.320000 GHz; 10.632 dB.
(2) 2.345000 GHz; 9.0084 dB.
Fig 9.
AN11024
Application note
Input return loss plot
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SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
6.3.2 Smith chart
019aab746
Reference plane = input SMA connector on PCB.
10 MHz to 6 GHz.
Fig 10. Smith chart of input return loss
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SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
6.4 Forward gain, wide sweep
019aab747
20.00
(2)
16.00
(1)
12.00
8.00
4.00
0.00
>Ch1: Start 10.000 MHz
Stop 6.00000 GHz
10 MHz to 6 GHz.
Tr 1 S21 LogM 2.000 dB/10.0 dB.
(1) 2.320000 GHz; 15.380 dB.
(2) 2.345000 GHz; 15.110 dB.
Fig 11. Forward gain plot
6.5 Reverse isolation
019aab748
-10.00
-14.00
-18.00
(2)
(1)
-22.00
-26.00
-30.00
>Ch1: Start 10.0000 MHz
Stop 6.00000 GHz
10 MHz to 6 GHz.
Tr 1 S12 LogM 2.000 dB/20.0 dB.
(1) 2.320000 GHz; 20.762 dB.
(2) 2.345000 GHz; 20.850 dB.
Fig 12. Reverse isolation plot
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SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
6.6 Output return losses
6.6.1 Log Mag
019aab749
0.00
-4.00
-8.00
-12.00
-16.00
(2)
(1)
-20.00
>Ch1: Start 10.0000 MHz
Stop 6.00000 GHz
10 MHz to 6 GHz.
Tr 1 S22 LogM 2.000 dB/10.0 dB.
(1) 2.320000 GHz; 19.453 dB.
(2) 2.345000 GHz; 16.948 dB.
Fig 13. Output return loss plot
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SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
6.6.2 Smith chart
019aab750
Reference plane = input SMA connector on PCB.
10 MHz to 6 GHz.
Fig 14. Smith chart of output return loss
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SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
6.7 2-tone test at 2332 MHz
6.7.1 Input stimulus for amplifier 2-tone test
019aab751
f1 = 2332 MHz; f2 = 2333 MHz; 17 dBm each tone
Fig 15. 2 tone test input stimulus at 2332 MHz
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SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
6.7.2 LNA response to 2-tone test
019aab752
Input IP3 = 17 + 59.72 = +12.85 dBm
Output IP3 = +12.85 + 15.3 dB gain = +28.15 dBm
Fig 16. 2 tone test LNA response at 2332 MHz
7. Abbreviations
Table 6.
AN11024
Application note
Abbreviations
Acronym
Description
EVB
EValuation Board
GPS
Global Positioning System
LAN
Local Area Network
LNA
Low Noise Amplifier
NWA
NetWork Analyzer
RF
Radio Frequency
SDARS
Satellite Digital Audio Service
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8. Legal information
8.1
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
8.2
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
AN11024
Application note
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Evaluation products — This product is provided on an “as is” and “with all
faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates
and their suppliers expressly disclaim all warranties, whether express, implied
or statutory, including but not limited to the implied warranties of
non-infringement, merchantability and fitness for a particular purpose. The
entire risk as to the quality, or arising out of the use or performance, of this
product remains with customer.
In no event shall NXP Semiconductors, its affiliates or their suppliers be liable
to customer for any special, indirect, consequential, punitive or incidental
damages (including without limitation damages for loss of business, business
interruption, loss of use, loss of data or information, and the like) arising out
the use of or inability to use the product, whether or not based on tort
(including negligence), strict liability, breach of contract, breach of warranty or
any other theory, even if advised of the possibility of such damages.
Notwithstanding any damages that customer might incur for any reason
whatsoever (including without limitation, all damages referenced above and
all direct or general damages), the entire liability of NXP Semiconductors, its
affiliates and their suppliers and customer’s exclusive remedy for all of the
foregoing shall be limited to actual damages incurred by customer based on
reasonable reliance up to the greater of the amount actually paid by customer
for the product or five dollars (US$5.00). The foregoing limitations, exclusions
and disclaimers shall apply to the maximum extent permitted by applicable
law, even if any remedy fails of its essential purpose.
8.3
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
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SDARS active antenna 2nd stage LNA with BFU690, 2.33 GHz
9. Contents
1
2
3
3.1
3.2
3.3
3.4
4
5
6
6.1
6.2
6.3
6.3.1
6.3.2
6.4
6.5
6.6
6.6.1
6.6.2
6.7
6.7.1
6.7.2
7
8
8.1
8.2
8.3
9
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
General description . . . . . . . . . . . . . . . . . . . . . . 4
Application board . . . . . . . . . . . . . . . . . . . . . . . 5
Application circuit . . . . . . . . . . . . . . . . . . . . . . . 5
Board layout . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
PCB layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Bill of materials . . . . . . . . . . . . . . . . . . . . . . . . . 7
Required equipment . . . . . . . . . . . . . . . . . . . . . 7
Connections and setup . . . . . . . . . . . . . . . . . . . 7
Typical EVB results . . . . . . . . . . . . . . . . . . . . . . 8
Noise figure . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Gain compression test . . . . . . . . . . . . . . . . . . 10
Input return losses . . . . . . . . . . . . . . . . . . . . . 11
Log Mag . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Smith chart . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Forward gain, wide sweep . . . . . . . . . . . . . . . 13
Reverse isolation . . . . . . . . . . . . . . . . . . . . . . 13
Output return losses . . . . . . . . . . . . . . . . . . . . 14
Log Mag . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Smith chart . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2-tone test at 2332 MHz . . . . . . . . . . . . . . . . . 16
Input stimulus for amplifier 2-tone test . . . . . . 16
LNA response to 2-tone test . . . . . . . . . . . . . . 17
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 March 2011
Document identifier: AN11024