Switching Diodes MA5J002E Silicon epitaxial planar type Unit: mm 2.0±0.1 For high speed switching circuits 0.7±0.1 • Includes 4 elements of cathode common connection • Parts reduction is possible • Ideal for surge voltage absorption 1 2 5˚ 1.25±0.1 2.1±0.1 ■ Features (0.425) (0.65) (0.65) 5 4 3 0.2±0.05 0.16+0.1 –0.06 5˚ ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Maximum peak reverse voltage Forward current *1 Peak forward current *1 VR 80 V VRM 80 V IF 100 mA IFM 225 mA IFSM 500 mA Tj 150 °C Operating ambient temperature Topr −25 to +105 °C Storage temperature Tstg −55 to +150 °C Non-repetitive peak forward surge current *1, 2 Junction temperature (0.15) Reverse voltage 0 to 0.1 Parameter 1: Anode 1 2: Cathode 1, 2, 3, 4 3: Anode 2 4: Anode 3 5: Anode 4 SMini5-F 1 Package Marking Symbol: M5B Internal Connection 5 4 Note) *1: Value in single diode used. *2: t = 1 s 1 2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 mA Reverse voltage VR IR = 100 µA Reverse current IR VR = 75 V 100 nA Terminal capacitance Ct VR = 0 V, f = 1 MHz 2 pF trr IF = 10 mA, VR = 6 V Irr = 0.1 IR , RL = 100 Ω 3 ns Reverse recovery time * 1.2 80 V V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *: trr measurement circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: November 2003 Wave Form Analyzer (SAS-8130) Ri = 50 Ω SKF00061BED 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA5J002E I R VR 102 Ta = 150°C 100°C 105 10 25°C −20°C 1 10−1 10−2 10−3 0 0.2 0.4 0.6 0.8 1.0 1.2 104 100°C 103 102 25°C 10 10−1 Ta = 25˚C 0.5 Ta = 150°C 0.4 0.3 0.2 0.1 1 Forward voltage VF (V) 2 Ct VR 0.6 Terminal capacitance Ct (pF) 106 Reverse current IR (nA) Forward current IF (mA) IF V F 103 0 20 40 60 80 100 Reverse voltage VR (V) SKF00061BED 120 0 0 20 40 60 80 100 Reverse voltage VR (V) 120 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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