PANASONIC 2SC1509

Transistor
2SC1509
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA777
Unit: mm
5.9±0.2
4.9±0.2
High collector to emitter voltage VCEO.
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
0.7±0.1
+0.3
●
0.7–0.2
●
8.6±0.2
■ Features
13.5±0.5
2.54±0.15
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage
VCEO
80
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1
A
Collector current
IC
0.5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
+0.2
+0.2
0.45–0.1
0.45–0.1
1.27
1.27
1
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
3.2
■ Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
Unit
0.1
µA
ICBO
Collector to base voltage
VCBO
IC = 10µA, IE = 0
80
V
Collector to emitter voltage
VCEO
IC = 100µA, IB = 0
80
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
hFE1*1
VCE = 10V, IC = 150mA*2
130
hFE2
VCE = 5V, IC = 500mA*2
50
VCE(sat)
IC = 300mA, IB = 30mA*2
0.2
0.4
Base to emitter saturation voltage
VBE(sat)
IC = 300mA, IB =
30mA*2
0.85
1.2
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 100MHz
120
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
11
Forward current transfer ratio
Collector to emitter saturation voltage
VCB = 20V, IE = 0
max
Collector cutoff current
5
V
330
100
FE1
V
MHz
20
*2
*1h
V
pF
Pulse measurement
Rank classification
Rank
R
S
hFE1
130 ~ 220
185 ~ 330
1
2SC1509
Transistor
PC — Ta
IC — VCE
1.2
IC — I B
1.2
1.2
1.0
0.8
0.6
0.4
0.2
9mA
8mA
7mA
0.8
6mA
5mA
0.6
4mA
3mA
0.4
2mA
0.2
0
40
60
80 100 120 140 160
2
4
6
8
10
0
Collector to emitter voltage VCE (V)
3
1
0.3
Ta=75˚C
25˚C
–25˚C
0.03
0.01
0.003
0.001
30
100
30
10
3
25˚C
Ta=–25˚C
1
75˚C
0.3
0.1
0.03
300
1000
3
10
fT — IE
140
120
100
80
60
40
20
0
–1
30
100
300
1000
–10
25˚C
–25˚C
150
100
50
–30
Emitter current IE (mA)
–100
10
30
100
300
1000
ICBO — Ta
104
50
VCB=20V
IE=0
f=1MHz
Ta=25˚C
45
3
Collector current IC (mA)
40
103
35
30
25
20
102
15
10
10
5
0
–3
Ta=75˚C
200
1
ICBO (Ta)
ICBO (Ta=25˚C)
160
10
250
Cob — VCB
Collector output capacitance Cob (pF)
180
8
VCE=10V
Collector current IC (mA)
VCB=10V
Ta=25˚C
6
0
1
Collector current IC (mA)
200
4
300
IC/IB=10
0.01
10
2
Base current IB (mA)
hFE — IC
100
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10
3
0.4
VBE(sat) — IC
10
1
0.6
0
0
VCE(sat) — IC
0.1
0.8
0.2
1mA
Forward current transfer ratio hFE
20
Ambient temperature Ta (˚C)
Transition frequency fT (MHz)
1.0
0
0
2
VCE=10V
Ta=25˚C
IB=10mA
Collector current IC (A)
1.0
Collector current IC (A)
Collector power dissipation PC (W)
Ta=25˚C
1
1
3
10
30
100
Collector to base voltage VCB (V)
0
60
120
180
Ambient temperature Ta (˚C)
2SC1509
Transistor
ICEO — Ta
105
Area of safe operation (ASO)
10
VCE=10V
Single pulse
Ta=25˚C
3
Collector current IC (A)
ICEO (Ta)
ICEO (Ta=25˚C)
104
103
102
1
ICP
t=10ms
IC
0.3
t=1s
DC
0.1
0.03
0.01
10
0.003
1
0
20
40
60
80
100 120 140
Ambient temperature Ta (˚C)
0.001
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
3