PANASONIC PNA2W01M

Darlington Phototransistors
PNA2W01M
Darlington Phototransistor
Unit: mm
For optical control systems
Type number : Emitter mark (Black)
10.0 min.
■ Features
10.0 min.
3.2±0.3
0.5±0.1
• High sensitivity
• Easy to combine with red and infrared light emitting diodes
• Small size designed for easier mounting to printed circuit board
φ1.8
45
2.8±0.2
0.15
R0.9
Rating
Unit
Collector to emitter voltage
VCEO
20
V
Emitter to collector voltage
VECO
5
V
0.85±0.15
Symbol
0.4±0.1
1.8
(0.7)
2.8±0.2
2.2±0.15
1.8
1.05±0.1
(0.7)
2
°
1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
3.2±0.3
1: Collector
2: Emitter
Collector current
IC
30
mA
Collector power dissipation
PC
100
mW
Operating ambient temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−30 to +100
°C
■ Electro-Optical Characteristics Ta = 25°C
Parameter
Symbol
Dark current
Collector photo current
Conditions
ICEO
VCE = 10 V
ICE(L)
VCE = 10 V, L = 2 lx
*1
Min
0.5
Typ
Max
Unit
0.1
0.5
µA
3
mA
Peak sensitivity wavelength
λP
VCE = 10 V
800
nm
Acceptance half angle
θ
Measured from the optical axis to the
half power point
18
°
Response time
tr , tf *2
VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω
200
Collector saturation voltage
VCE(sat)
ICE(L) = 1 mA, L = 100 lx *1
0.7
µs
1.5
V
Note) *1: Measurements were made using a tungsten lamp (color temperature T = 2856 K) as a light source.
*2: Switching time measurement circuit
Sig. in
VCC
(Input pulse)
50 Ω
Sig. out (Output pulse)
RL
90%
10%
td
tr
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1
PNA2W01M
Darlington Phototransistors
P C  Ta
ICE(L)  VCE
32
100
80
60
40
20
ICE(L)  L
103
Ta = 25°C
T = 2 856 K
Collector photo current ICE(L) (mA)
Collector photo current ICE(L) (mA)
Collector power dissipation PC (mW)
120
PC = 100 mW
24
L = 10 lx
16
5 lx
8
VCE = 10 V
Ta = 25°C
T = 2 856 K
102
10
1
2 lx
1 lx
0
20
40
60
80
0
100
0
4
8
ICEO  Ta
1
10−1
10−2
20
40
60
80
1
60
50
40
30
20
80
60
40
40
80
0
200
120
30°
40°
50°
60°
70°
400
600
800
1 000
1 200
Wavelength λ (nm)
tr  ICE(L)
tf  ICE(L)
105
VCC = 10 V
Ta = 25°C
104
Rise time tr (µs)
70
Relarive sensitivity ∆S (%)
90
0
105
100
80
VCE = 10 V
Ta = 25°C
Ambient temperature Ta (°C)
20°
103
20
10−1
−40
100
102
Spectral sensitivity characterisitics
100
10
Directivity characteristics
10°
10
1
Illuminance L (lx)
VCE = 10 V
T = 2 856 K
Ambient temperature Ta (°C)
0°
10−1
24
Relarive sensitivity ∆S (%)
Collector photo current ICE(L) (mA)
Dark current ICEO (µA)
10
0
20
ICE(L)  Ta
102
VCE = 10 V
10−3
−20
16
Collector to emitter voltage VCE (V)
Ambient temperature Ta (°C)
102
12
VCC = 10 V
Ta = 25°C
104
RL = 1 kΩ
103
500 Ω
100 Ω
102
Fall time tf (µs)
0
−20
RL = 1 kΩ
103
500 Ω
100 Ω
102
80°
90°
10
10−2
10−1
1
10
Collector photo current ICE(L) (mA)
2
10
10−2
10−1
1
10
Collector photo current ICE(L) (mA)