Datasheet

ELECTRON MULTIPLIER
R4146-10
Thickness: 6 mm, Can be stacked side-by-side
for Multi-collector Mass Spectrometry
SPECIFICATIONS
GENERAL
Parameter
Input Aperture Diameter
Dynode Structure
Number of Dynode Stages
First Dynode Material
Total Built-in Resistance
Operating Ambient Temperature
Storage Temperature
Polarity of Detected Ions
Description / Value
8×1
Linear focused
18
Cu-BeO
21
-30 to +50
-80 to +50
Positive
Unit
mm
—
—
—
MΩ
°C
°C
—
Value
-2500
350
1 × 10-2
350
10
1 × 108
Unit
V
V
Pa
°C
µA
—
Value
-1800
1 × 107
5
1
3.5
4.0
Unit
V
—
µA
pA
ns
pF
MAXIMUM RATINGS
Parameter
Anode to First Dynode Voltage
Anode to Last Dynode Voltage
Operating Vacuum Level
Bake-Out Temperature (at 5 × 10-3 Pa)
Average Anode Current A
Operating Gain
Figure 1: Typical Gain
109
TPMHB0877EA
108
CHARACTERISTICS
107
106
GAIN
Parameter
Recommened Supply Voltage
Gain (Typ.)
DC Linearity (Typ.)
Dark Current (Max.)
Rise Time (Typ.)
Anode to All Other Electrode Capacitance
105
NOTE: A Averaged over any interval of 30 seconds maximum.
104
Figure 2: Example of Measurement configuration
R4146-10
(Detector)
Heavy ion
Posi
tive
Ion
sb
Magnet
m
ea
Signal
103
Signal
Light ion
Thin: 6 mm
102
1000
1500
2000
2500
SUPPLY VOLTAGE (V)
Ion source
TPMHC0249EA
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2014 Hamamatsu Photonics K.K.
3000
ELECTRON MULTIPLIER R4146-10
Figure 3: Dimensional Outline (Unit: mm)
71.8 ± 1.0
+0
2- 1.0 ± 0.1
21.0 ± 0.2
19.0 ± 0.2
RESISTORS
35.0 ± 0.5
MOUNTING HOLES
2- 2.2
15 ± 1
56.9 - 0.2
GND PIN
19.0 ± 0.2
6.0 ± 0.2
INPUT APERTURE
8×1
11.0 ± 0.2
MOUNTING HOLES
2- 2.2
1.1
1
1
3.0 ± 0.1
FRONT PLATE
12.0 ± 0.2
12.0 ± 0.2
OUTPUT PIN
REAR PLATE
TPMHA0588EA
HAMAMATSU PHOTONICS K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected]
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]
TPMH1338E02
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: [email protected]
China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected]
AUG. 2014 IP
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