ELECTRON MULTIPLIER R4146-10 Thickness: 6 mm, Can be stacked side-by-side for Multi-collector Mass Spectrometry SPECIFICATIONS GENERAL Parameter Input Aperture Diameter Dynode Structure Number of Dynode Stages First Dynode Material Total Built-in Resistance Operating Ambient Temperature Storage Temperature Polarity of Detected Ions Description / Value 8×1 Linear focused 18 Cu-BeO 21 -30 to +50 -80 to +50 Positive Unit mm — — — MΩ °C °C — Value -2500 350 1 × 10-2 350 10 1 × 108 Unit V V Pa °C µA — Value -1800 1 × 107 5 1 3.5 4.0 Unit V — µA pA ns pF MAXIMUM RATINGS Parameter Anode to First Dynode Voltage Anode to Last Dynode Voltage Operating Vacuum Level Bake-Out Temperature (at 5 × 10-3 Pa) Average Anode Current A Operating Gain Figure 1: Typical Gain 109 TPMHB0877EA 108 CHARACTERISTICS 107 106 GAIN Parameter Recommened Supply Voltage Gain (Typ.) DC Linearity (Typ.) Dark Current (Max.) Rise Time (Typ.) Anode to All Other Electrode Capacitance 105 NOTE: A Averaged over any interval of 30 seconds maximum. 104 Figure 2: Example of Measurement configuration R4146-10 (Detector) Heavy ion Posi tive Ion sb Magnet m ea Signal 103 Signal Light ion Thin: 6 mm 102 1000 1500 2000 2500 SUPPLY VOLTAGE (V) Ion source TPMHC0249EA Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2014 Hamamatsu Photonics K.K. 3000 ELECTRON MULTIPLIER R4146-10 Figure 3: Dimensional Outline (Unit: mm) 71.8 ± 1.0 +0 2- 1.0 ± 0.1 21.0 ± 0.2 19.0 ± 0.2 RESISTORS 35.0 ± 0.5 MOUNTING HOLES 2- 2.2 15 ± 1 56.9 - 0.2 GND PIN 19.0 ± 0.2 6.0 ± 0.2 INPUT APERTURE 8×1 11.0 ± 0.2 MOUNTING HOLES 2- 2.2 1.1 1 1 3.0 ± 0.1 FRONT PLATE 12.0 ± 0.2 12.0 ± 0.2 OUTPUT PIN REAR PLATE TPMHA0588EA HAMAMATSU PHOTONICS K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] TPMH1338E02 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: [email protected] China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected] AUG. 2014 IP