Datasheet

Distance linear image sensor
S11961-01CR
Measures the distance to an object by TOF
(Time-Of-Flight) method
The distance image sensors are designed to measure the distance to an object by TOF method. When used in combination
with a pulse modulated light source, this sensor outputs phase difference information on the timing that the light is emitted
and received. The sensor output signals are arithmetically processed by an external signal processing circuit or a PC to obtain
distance data.
Features
Applications
High-speed charge transfer structure
Obstacle detection (self-driving, robots, etc.)
Wide dynamic range, low noise by non-destructive readout
Security (intrusion detection, etc.)
Operates with minimal detection errors even under fluctuating
(charge drain function)
Shape recognition (logistics, robots, etc.)
Motion capture
Real-time distance measurement
Structure
Parameter
Image size
Pixel pitch
Pixel height
Number of pixels
Number of effective pixels
Package
Window material
Note: This product is not hermetically sealed.
Specification
5.12 × 0.05
20
50
272
256
22-pin PWB
AR-coated glass
Unit
mm
μm
μm
pixels
pixels
-
Absolute maximum ratings
Parameter
Symbol
Condition
Value
Vdd(A)
Ta=25 °C
-0.3 to +6
Vdd(D)
Ta=25 °C
-0.3 to +6
Pixel amplifier
Vsf
Analog input terminal
Pixel reset
Vr
Ta=25 °C
-0.3 to Vdd(A) + 0.3
voltage
Photosensitive area
Vpg
Pixel reset pulse
p_res
Signal sampling pulse
phis
Digital input terminal
Master clock pulse
mclk
Ta=25 °C
-0.3 to Vdd(D) + 0.3
voltage
Signal readout trigger pulse
trig
Output signal synchronous pulse
dclk
Charge transfer clock pulse voltage
VTX1, VTX2, VTX3
Ta=25 °C
-0.3 to Vdd(A) + 0.3
Operating temperature
Topr
No dew condensation*1
-25 to +85
Storage temperature
Tstg
No dew condensation*1
-40 to +100
Reflow soldering conditions*2
Tsol
260 °C max. 2 times (see P.8)
Analog supply voltage
Digital supply voltage
Unit
V
V
V
V
V
°C
°C
-
*1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
*2: JEDEC level 3
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
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1
Distance linear image sensor
S11961-01CR
Recommended terminal voltage (Ta=25 °C)
Parameter
Analog supply voltage
Digital supply voltage
Pixel amplifier
Pixel reset
Photosensitive area
High level
Pixel reset pulse voltage
Low level
High level
Signal sampling pulse voltage
Low level
High level
Master clock pulse voltage
Low level
High level
Signal readout trigger pulse
voltage
Low level
Output signal synchronous pulse High level
voltage
Low level
Bias voltage
Symbol
Vdd(A)
Vdd(D)
Vsf
Vr
Vpg
p_res
phis
mclk
trig
dclk
Min.
4.75
4.75
4.5
4
0.8
Vdd(D) ×
Vdd(D) ×
Vdd(D) ×
Vdd(D) ×
Vdd(D) ×
-
0.8
0.8
0.8
0.8
0.8
Typ.
5
5
5
4.25
1.0
-
Max.
5.25
5.25
Vdd(A)
4.5
1.2
Vdd(D) × 0.2
Vdd(D) × 0.2
Vdd(D) × 0.2
Vdd(D) × 0.2
Vdd(D) × 0.2
Unit
V
V
V
V
V
Typ.
f(mclk)
15
Max.
5M
30
Unit
Hz
Hz
mA
V
V
V
V
V
Electrical characteristics [Ta=25 °C, Vdd(A)=Vdd(D)=5 V]
Parameter
Clock pulse frequency
Video data rate
Current consumption
Symbol
f(mclk)
VR
Ic
Condition
Dark state
Min.
1M
-
Electrical and optical characteristics [Ta=25 °C, Vdd(A)=Vdd(D)=5 V, Vsf=5 V, Vr=4.25 V, MCLK=5 MHz]
Parameter
Symbol
Min.
Typ.
Max.
Unit
Spectral response range
400 to 1100
nm
λ
Peak sensitivity wavelength
800
nm
λp
Photosensitivity*3
S
1.05 × 1012
2.1 × 1012
4.2 × 1012
V/W·s
Dark output
Vd
0.5
10
V/s
Random noise
RN
0.4
0.8
mV rms
Dark output voltage*4
Vor
2.95
3.3
4.35
V
Saturation output voltage
Vsat
2
V
Sensitivity ratio*5
SR
0.7
1.43
Photoresponse nonuniformity*6
PRNU
±10
%
*3: Monochromatic wavelength source (λ=805 nm)
*4: Output voltage right after reset in dark state
*5: Sensitivity ratio of Vout1 (VTX1=3 V, VTX2=VTX3=0 V) to Vout2 (VTX2=3 V, VTX1=VTX3=0 V)
*6: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly
illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 256 pixels excluding 8 pixels each at
both ends, and is defined as follow:
PRNU = ∆X/X × 100 [%]
X: average output of all pixels, ∆X: difference between X and maximum or minimum output
2
Distance linear image sensor
S11961-01CR
Spectral response
(Typ. Ta=25 °C)
1.0
0.9
Relative sensitivity
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
200 300 400 500 600 700 800 900 1000 1100 1200
Wavelength (nm)
KMPDB0375EB
Block diagram
GND GND GND GNDGND
22 21 20 19 18
VTX3
VTX2
VTX1
p_res
Vdd(A)
15
2
3
4
5
GND
14
Vr Vsf Vpg
1 17 16
Photodiode array
272 pixels
(number of effective pixels:
256 pixels)
phis 6
Bias
generator
13 Vout1
Sample & hold circuit
12 Vout2
Buffer amplifier
mclk 7
trig 8
9 dclk
Horizontal shift register
10
11
Vdd(D)
GND
KMPDC0430EC
Basic connection example
Buffer amplifier
Vout 1
Vout 2
Buffer amplifier
KMPDC0486EA
3
Distance linear image sensor
S11961-01CR
Timing chart
mclk
t0
p_res
t8
thp(p_res)
t1
phis
t2
t7
thp(phis)
t3
trig
t6
t4
t5
Output ch
1 2 271 272
Output ch
1 2 271 272
Vout1
Vout2
dclk
t9
t10
t11
VTX enable
VTX1, 2, 3
VTX enable
Light
tpi(VTX)
VTX1
VTX2
thp(VTX1)
thp(VTX2)
tlp(VTX1)
tlp(VTX2)
thp(VTX3)
VTX3
tlp(VTX3)
KMPDC0431EB
KMPDC0431EB
tr(mclk)
tf(mclk)
tr(phis)
tf(phis)
mclk
tf(dclk)
phis
mclk
tr(p_res)
tf(p_res)
tr(trig)
tf(trig)
tr(dclk)
dclk
td(dclk)
td(vout)
p_res
trig
Vout1
Vout2
0.1 V
tr(vout)
tf(vout)
mclk
p_res
t0
KMPDC0432EA
4
Distance linear image sensor
S11961-01CR
Calculation method of frame rate
Frame rate=1/(Time per frame)
=1/(Integration time + Readout time)
Integration time:
It is necessary to be changed by the required distance accuracy and usage environment factors such as fluctuating background light.
Readout time=
1
× Number of horizontal pixels
Clock pulse frequency
=Time per clock (Readout time per pixel) × Number of horizontal pixels
Calculation example of readout time (clock pulse frequency: 5 MHz, number of horizontal pixels: 272)
Readout time=
1
5 × 106 [Hz]
× 272
=200 [ns] × 272
=0.0544 [ms]
When operating in non-destructive readout mode:
Time per frame=Integration time + (Readout time × Non-destructive readout count)
5
Distance linear image sensor
S11961-01CR
Parameter
Symbol
Min.
Master clock pulse duty ratio
45
Master clock pulse rise and fall times
tr(mclk), tf(mclk)
0
Pixel reset pulse high period
thp(p_res)
10
Pixel reset pulse rise and fall times
tr(p_res), tf(p_res)
0
Signal sampling pulse high period
thp(phic)
1
Signal sampling pulse rise and fall times
tr(phic), tf(phic)
0
Signal readout trigger pulse rise and fall times
tr(trig), tf(trig)
0
Time from rising edge of master clock pulse to pixel
t0
0
reset pulse
Time from rising edge of pixel reset pulse to rising
t1
1
edge of signal sampling pulse
Time from falling edge of signal sampling pulse to
t2
1.2
rising edge of signal readout trigger pulse
Time from rising edge of master clock pulse to rising
1/4 × 1/f(mclk)
t3
edge of signal readout trigger pulse
Time from rising edge of signal readout trigger pulse
1/4 × 1/f(mclk)
t4
to rising edge of master clock pulse
Time from rising edge of master clock pulse to falling
1/4 × 1/f(mclk)
t5
edge of signal readout trigger pulse
Time from falling edge of signal readout trigger pulse
1/4 × 1/f(mclk)
t6
to rising edge of master clock pulse
Time from rising edge of master clock pulse (after
reading signals from all pixels) to rising edge of
t7
1/f(mclk)
output signal sampling pulse
Time from rising edge of master clock pulse (after
reading signals from all pixels) to rising edge of pixel
t8
1/f(mclk)
reset pulse
Time from rising edge of master clock pulse to falling
td(dclk)
0
edge of output signal synchronous pulse*7
Output signal synchronous pulse output voltage rise
tr(dclk)
time (10 to 90%)*7
Output signal synchronous pulse output voltage fall
tf(dclk)
time (10 to 90%)*7
7 8
tr(Vout), tf(Vout)
Settling time of output signal 1, 2 (10 to 90%)* *
Time from rising edge of master clock pulse to output
td(Vout)
signal 1, 2 (output 50%)*7
Charge transfer clock pulse interval
tpi(VTX)
60
Charge transfer clock pulse (VTX1) high period
thp(VTX1)
30
Typ.
50
-
Max.
55
20
20
20
20
Unit
%
ns
μs
ns
μs
ns
ns
-
-
ns
-
-
μs
-
-
μs
-
1/2 × 1/f(mclk)
s
-
1/2 × 1/f(mclk)
s
-
1/2 × 1/f(mclk)
s
-
1/2 × 1/f(mclk)
s
-
-
s
-
-
s
25
50
ns
20
40
ns
20
40
ns
35
70
ns
40
80
ns
-
ns
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
tpi(VTX) thp(VTX2) thp(VTX3)
tpi(VTX) thp(VTX1) thp(VTX3)
tpi(VTX) thp(VTX1) thp(VTX2)
3
3
3
0
-
ns
ns
V
V
1/f(mclk)
-
-
s
1/f(mclk)
-
-
s
1/f(mclk)
-
-
s
Charge transfer clock pulse (VTX1) low period
tlp(VTX1)
-
Charge transfer clock pulse (VTX2) high period
thp(VTX2)
30
Charge transfer clock pulse (VTX2) low period
tlp(VTX2)
-
Charge transfer clock pulse (VTX3) high period
thp(VTX3)
0
Charge transfer clock pulse (VTX3) low period
tlp(VTX3)
-
Charge transfer clock pulse voltage rise time
tr(VTX)
Charge transfer clock pulse voltage fall time
tf(VTX)
High level
Charge transfer clock pulse voltage
VTX1, VTX2, VTX3
Low level
Time from rising edge of signal readout trigger pulse
t9
to start VTX operation
Time from finish VTX operation to rising edge of
t10
output signal synchronous pulse
Time from finish VTX operation to rising edge of pixel
t11
reset pulse
*7: CL=3 pF
*8: Output voltage=0.1 V
6
Distance linear image sensor
S11961-01CR
Input terminal capacitance (Ta=25 °C, Vdd=5 V)
Parameter
Charge transfer clock pulse internal load capacitance
Symbol
CLTX
Dimensional outline (unit: mm)
Min.
-
Typ.
25
10.1
9.1
P1.27 × 4=5.08
5.3
0.4
P0.8 × 5=4.0
0.4
1.1
4.3
Photosensitive area
5.12 × 0.05
KMPDC0437EB
Hole
ϕ0.2
Photosensitive surface
1.0
2.0
Unit
pF
Recommended land pattern (unit: mm)
10.6
5.8
Max.
-
10.1
P1.27 × 4=5.08
7
11
P0.8 × 5=4.0
12
1.27
0.8
5.3
6
17
1
22
18
Electrode
(22 ×)ȁ 0.4
(22 ×)ġϕ0.2
Tolerance unless otherwise noted: ±0.2, ±2°
KMPDA0298EC
7
Distance linear image sensor
S11961-01CR
Pin connections
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Symbol
Vr
VTX3
VTX2
VTX1
p_res
phis
mclk
trig
dclk
Vdd(D)
GND
Vout2
Vout1
GND
Vdd(A)
Vpg
Vsf
GND
GND
GND
GND
GND
I/O
I
I
I
I
I
I
I
I
O
I
I
O
O
I
I
I
I
I
I
I
I
I
Description
Bias voltage (pixel reset)
Charge transfer clock pulse 3
Charge transfer clock pulse 2
Charge transfer clock pulse 1
Pixel reset pulse
Signal sampling pulse
Master clock pulse
Signal readout trigger pulse
Output signal synchronous pulse
Digital supply voltage
Ground
Output signal 1
Output signal 2
Ground
Analog supply voltage
Bias voltage (photosensitive area)
Bias voltage (pixel amplifier)
Ground
Ground
Ground
Ground
Ground
Note: Connect an impedance converting buffer amplifier to Vout1/Vout2 so as to minimize the current flow.
Measured example of temperature profile with our hot-air reflow oven for product testing
300 °C
260 °C max.
Temperature
230 °C
190 °C
170 °C
Preheat
Preheat
60
60 to
to 120
120 ss
Soldering
Soldering
40 s max.
Time
KMPDB0381EA
∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a
humidity of 60% or less, and perform soldering within 168 hours.
∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used.
Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance.
8
Distance linear image sensor
S11961-01CR
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Surface mount type products
∙ Image sensors
Information described in this material is current as of February, 2016.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMPD1140E05 Feb. 2016 DN
9
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