Datasheet

Distance area image sensor
S11962-01CR
Measures the distance to an object by TOF
(Time-Of-Flight) method
The distance image sensors are designed to measure the distance to an object by TOF method. When used in combination
with a pulse modulated light source, this sensor outputs phase difference information on the timing that the light is emitted
and received. The sensor output signals are arithmetically processed by an external signal processing circuit or a PC to obtain
distance data.
Features
Applications
High-speed charge transfer structure
Obstacle detection (self-driving, robots, etc.)
Operates with minimal detection errors even under fluctuating
(charge drain function)
Security (intrusion detection, etc.)
Real-time distance measurement
Motion capture
Shape recognition (logistics, robots, etc.)
Structure
Parameter
Image size
Pixel size
Pixel pitch
Number of pixels
Number of effective pixels
Package
Window material
Note: This product is not hermetically sealed.
Specification
2.56 × 2.56
40 × 40
40
72 × 72
64 × 64
48-pin PWB
AR-coated glass
Unit
mm
μm
μm
pixels
pixels
-
Absolute maximum ratings
Parameter
Symbol
Condition
Value
Vdd(A)
Ta=25 °C
-0.3 to +6
Vdd(D)
Ta=25 °C
-0.3 to +6
Pixel amplifier
Vsf
Pixel reset
Vr
Analog input terminal
Ta=25 °C
-0.3 to Vdd(A) + 0.3
voltage
Output offset
Vref
Photosensitive area
Vpg
Frame reset pulse
reset
Frame synchronous trigger pulse
vst
Digital input terminal
Ta=25 °C
-0.3 to Vdd(D) + 0.3
Line synchronous trigger pulse
hst
voltage
Pixel reset pulse
ext_res
Master clock pulse
mclk
VTX1, VTX2, VTX3
Ta=25 °C
-0.3 to Vdd(A) + 0.3
Charge transfer clock pulse voltage
No dew condensation*1
-25 to +85
Operating temperature
Topr
Storage temperature
Tstg
No dew condensation*1
-40 to +100
Reflow soldering conditions*2
Tsol
260 °C max. 2 times (see P.10)
Analog supply voltage
Digital supply voltage
Unit
V
V
V
V
V
°C
°C
-
*1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
*2: JEDEC level 3
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
www.hamamatsu.com
1
Distance area image sensor
S11962-01CR
Recommended terminal voltage (Ta=25 °C)
Parameter
Analog supply voltage
Digital supply voltage
Bias voltage
Frame reset pulse voltage
Frame synchronous trigger pulse
voltage
Line synchronous trigger pulse
voltage
Master clock pulse voltage
Pixel reset pulse voltage
Output signal effective period
pulse voltage
Output signal synchronous pulse
voltage
Non-readout period pulse voltage
Pixel amplifier
Pixel reset
Output offset
Photosensitive area
High level
Low level
High level
Low level
High level
Low level
High level
Low level
High level
Low level
High level
Low level
High level
Low level
High level
Low level
Symbol
Vdd(A)
Vdd(D)
Vsf
Vr
Vref
Vpg
reset
vst
hst
mclk
ext_res
oe
dclk
dis_read
Min.
4.75
4.75
4.5
3.7
2.3
0.8
Vdd(D) ×
Vdd(D) ×
Vdd(D) ×
Vdd(D) ×
Vdd(D) ×
Vdd(D) ×
Vdd(D) ×
Vdd(D) ×
-
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
Typ.
5
5
5
3.9
2.5
1.0
-
Max.
5.25
5.25
Vdd(A)
4.1
2.7
1.2
Vdd(D) × 0.2
Vdd(D) × 0.2
Vdd(D) × 0.2
Vdd(D) × 0.2
Vdd(D) × 0.2
Vdd(D) × 0.2
Vdd(D) × 0.2
Vdd(D) × 0.2
Unit
V
V
V
V
V
V
Typ.
f(mclk)
10
Max.
10 M
20
Unit
Hz
Hz
mA
V
V
V
V
V
V
V
V
Electrical characteristics [Ta=25 °C, Vdd(A)=Vdd(D)=5 V]
Parameter
Clock pulse frequency
Video data rate
Current consumption
Symbol
f(mclk)
VR
Ic
Condition
Dark state
Min.
1M
-
Electrical and optical characteristics [Ta=25 °C, Vdd(A)=Vdd(D)=5 V, Vsf=5 V, Vr=4.25 V, MCLK=5 MHz]
Parameter
Symbol
Min.
Typ.
Max.
Unit
Spectral response range
λ
400 to 1100
nm
800
Peak sensitivity wavelength
λp
nm
S
1.15 × 1012
2.3 × 1012
4.6 × 1012
V/W·s
Photosensitivity*3
Dark output
Vd
0.5
10
V/s
Random noise
RN
0.8
1.6
mV rms
Dark output voltage*4
Vor
Vref + 1.0
Vref + 2.1
V
Saturation output voltage
Vsat
Vref - 1.1
Vref + 0.3
V
Sensitivity ratio*5
SR
0.7
1.43
Photoresponse nonuniformity*6
PRNU
±10
%
*3: Monochromatic wavelength source (λ=805 nm)
*4: Output voltage right after reset in dark state
*5: Sensitivity ratio of Vout1 (VTX1=3 V, VTX2=VTX3=0 V) to Vout2 (VTX2=3 V, VTX1=VTX3=0 V)
*6: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly
illuminated by white light which is approx. 50% of the saturation level. PRNU is measured using the pixels excluding the pixels of
the 4 outermost lines and defective pixels, and is defined as follows:
PRNU= ∆X/X × 100 (%)
X: average output of all pixels, ∆X: standard deviation of pixel output
2
Distance area image sensor
S11962-01CR
Spectral response
(Typ. Ta=25 °C)
1.0
0.9
Relative sensitivity
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
200 300 400 500 600 700 800 900 1000 1100 1200
Wavelength (nm)
KMPDB0375EB
Block diagram
GND Vdd(A) GND GND Vdd(A)
2
1
45
44
3
VTX1 VTX2 VTX3
43
42
41
GND Vdd(A)
40
39
36 GND
33 Vdd(A)
Vertical shift register
32 GND
31 Vpg
Photodiode array
72 × 72 pixels
(number of effective pixels:
64 × 64 pixels)
30 Vsf
29 Vr
28 Vref
ext_res
reset
vst
hst
mclk
27 Vout1
6
7
8
10
11
CDS circuit
Timing
generator
Horizontal shift register
26 Vout2
Buffer
25 GND
amplifier
23 Vdd(A)
22 GND
9 14 5
oe dclk dis_read
12
GND
15
16
21
20
GND Vdd(D) GND Vdd(D)
KMPDC0438EC
Basic connection example
Buffer amplifier
Vout 1
Vout 2
Buffer amplifier
KMPDC0486EA
3
Distance area image sensor
S11962-01CR
Timing chart
Using VTX3 allows changing the light source duty ratio to increase the light emission power. When thp(VTX3) is set to 0 ns, the light
source can be driven with a duty ratio of 50%.
Frame timing
t13 (readout time)
t14 (integration time)
reset
t1 t2 t3 t4
vst
t5 t6 t7 t8
hst
2
t9 t10 t11t12
1 (1H)
N
72
2 (1H)
N (1H)
73
1
72 (1H)
mclk
t16
VTX1, 2, 3 VTX enable
VTX enable
t17
dis_read
t19
t18
ext_res
Pulsed light
tpi(VTX)
VTX1
VTX2
thp(VTX1)
thp(VTX2)
tlp(VTX1)
tlp(VTX2)
thp(VTX3) tlp(VTX3)
VTX3
VTX enable
KMPDC0439EB
tr(reset)
tf(reset)
tr(hst)
tf(hst)
mclk
tr(vst)
tf(dclk)
hst
reset
tf(vst)
tr(mclk)
tf(mclk)
tr(dclk)
dclk
td(dclk)
td(vout)
vst
Vout1
Vout2
mclk
0.1 V
tr(vout)
tf(vout)
mclk
hst
tr (dis_read)
dis_read
td(dis_read)
tf(dis_read)
tr(oe)
tf(oe)
oe
td(oe)
td(ext_res)
tf(ext_res)
ext_res
KMPDC0440EA
4
Distance area image sensor
S11962-01CR
Calculation method of frame rate
Frame rate=1/(Time per frame)
=1/(Integration time + Readout time)
Integration time:
It is necessary to be changed by the required distance accuracy and usage environment factors such as fluctuating background light.
Readout time=
1
× Horizontal timing clock × Number of vertical pixels
Clock pulse frequency
=Time per clock (Readout time per pixel) × Horizontal timing clocks × Number of vertical pixels
Calculation example of readout time (clock pulse frequency: 5 MHz, horizontal timing clocks: 110, number of vertical pixels: 72)
1
× 110 × 72
Readout time=
5 × 106 [Hz]
=200 [ns] × 110 × 72
=1.584 [ms]
Horizontal timing
Frame timing 1 (1H)
110 (=38 + 72) × mclk
t15
38 mclk
hst
mclk
oe
dclk
1
2
3
4
72
Vout1
Vout2
KMPDC0441EA
5
Distance area image sensor
S11962-01CR
Parameter
Symbol
Master clock pulse duty ratio
Master clock pulse rise and fall times
tr(mclk), tf(mclk)
Frame reset pulse rise and fall times
tr(reset), tf(reset)
Frame synchronous trigger pulse rise and fall times
tr(vst), tf(vst)
Line synchronous trigger pulse rise and fall times
tr(hst), tf(hst)
Pixel reset pulse rise and fall times
tr(ext_res), tf(ext_res)
Time from falling edge of master clock pulse to rising
t1
edge of frame reset pulse
Time from rising edge of frame reset pulse to falling
t2
edge of master clock pulse
Time from falling edge of master clock pulse to falling
t3
edge of frame reset pulse
Time from falling edge of frame reset pulse to falling
t4
edge of master clock pulse
Time from falling edge of master clock pulse to rising
t5
edge of frame synchronous trigger pulse
Time from rising edge of frame synchronous trigger
t6
pulse to falling edge of master clock pulse
Time from falling edge of master clock pulse to falling
t7
edge of frame synchronous trigger pulse
Time from falling edge of frame synchronous trigger
t8
pulse to falling edge of master clock pulse
Time from rising edge of master clock pulse to rising
t9
edge of line synchronous trigger pulse
Time from rising edge of line synchronous trigger pulse
t10
to rising edge of master clock pulse
Time from rising edge of master clock pulse to falling
t11
edge of line synchronous trigger pulse
Time from falling edge of line synchronous trigger
t12
pulse to rising edge of master clock pulse
Min.
45
0
0
0
0
0
Typ.
50
-
Max.
55
20
20
20
20
20
Unit
%
ns
ns
ns
ns
ns
1/4 × 1/f(mclk)
-
1/2 × 1/f(mclk)
s
1/4 × 1/f(mclk)
-
1/2 × 1/f(mclk)
s
1/4 × 1/f(mclk)
-
1/2 × 1/f(mclk)
s
1/4 × 1/f(mclk)
-
1/2 × 1/f(mclk)
s
1/4 × 1/f(mclk)
-
1/2 × 1/f(mclk)
s
1/4 × 1/f(mclk)
-
1/2 × 1/f(mclk)
s
1/4 × 1/f(mclk)
-
1/2 × 1/f(mclk)
s
1/4 × 1/f(mclk)
-
1/2 × 1/f(mclk)
s
1/4 × 1/f(mclk)
-
1/2 × 1/f(mclk)
s
1/4 × 1/f(mclk)
-
1/2 × 1/f(mclk)
s
1/4 × 1/f(mclk)
-
1/2 × 1/f(mclk)
s
1/4 × 1/f(mclk)
-
1/2 × 1/f(mclk)
s
-
-
s
t14
(110/f(mclk) + t15)
× 72 + t18 + t19
-
10
-
ms
t15
10/f(mclk)
-
-
s
td(dclk)
0
25
50
ns
tr(dclk)
-
20
40
ns
tf(dclk)
-
20
40
ns
td(oe)
0
25
50
ns
tr(oe)
-
20
40
ns
tf(oe)
-
20
40
ns
tr(Vout), tf(Vout)
-
35
70
ns
td(Vout)
-
40
80
ns
Readout time
t13
Integration time
Time from rising edge of master clock pulse (after reading signals
from all pixels) to rising edge of master clock pulse (hst: high period)
Time from falling edge of master clock pulse to rising
edge of output signal synchronous pulse
Output signal synchronous pulse output voltage rise time
(10 to 90%)*7
Output signal synchronous pulse output voltage fall
time (10 to 90%)*7
Time from rising edge of master clock pulse to rising
edge of output signal effective period pulse
Output signal effective period pulse rise time
(10 to 90%)*7
Output signal effective period pulse fall time
(10 to 90%)*7
Settling time of output signal 1, 2 (10 to 90%)*7 *8
Time from rising edge of master clock pulse to output
signal 1, 2 (output 50%)*7
*7: CL=3 pF
*8: Output voltage=0.1 V
6
Distance area image sensor
S11962-01CR
Parameter
Charge transfer clock pulse interval
Charge transfer clock pulse (VTX1) high period
Symbol
tpi(VTX)
thp(VTX1)
Min.
60
30
Charge transfer clock pulse (VTX1) low period
tlp(VTX1)
-
Charge transfer clock pulse (VTX2) high period
thp(VTX2)
30
Charge transfer clock pulse (VTX2) low period
tlp(VTX2)
-
Charge transfer clock pulse (VTX3) high period
thp(VTX3)
0
Charge transfer clock pulse (VTX3) low period
tlp(VTX3)
-
Charge transfer clock pulse voltage rise time
tr(VTX)
Charge transfer clock pulse voltage fall time
tf(VTX)
High level
Charge transfer clock pulse voltage
VTX1, VTX2, VTX3
Low level
Time from falling edge of pixel reset pulse to
t16
“VTX enable period=on”
Time from “VTX enable period=off” to falling edge of
t17
frame reset pulse
Time from rising edge of line synchronous trigger pulse
t18
(last pulse) to rising edge of pixel reset pulse
Pixel reset pulse high period
t19
Time from rising edge of line synchronous trigger pulse
td(dis_read)
to rising edge of non-readout period pulse*7
tr(dis_read)
Non-readout period pulse rise time (10 to 90%)*7
Non-readout period pulse fall time (10 to 90%)*7
tf(dis_read)
Max.
-
Unit
ns
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
Typ.
tpi(VTX) thp(VTX2) thp(VTX3)
tpi(VTX) thp(VTX1) thp(VTX3)
tpi(VTX) thp(VTX1) thp(VTX2)
3
3
3
0
-
ns
ns
0
-
-
s
0
-
-
s
0
-
-
s
10
-
-
μs
-
25
50
ns
-
20
20
40
40
ns
ns
Min.
-
Typ.
100
Max.
-
Unit
pF
V
Input terminal capacitance (Ta=25 °C, Vdd=5 V)
Parameter
Charge transfer clock pulse internal load capacitance
Symbol
CLTX
7
Distance area image sensor
Dimensional outline (unit: mm)
8.18
Index mark
ϕ0.2
S11962-01CR
Recommended land pattern (unit: mm)
7.58
Photosensitive
area
2.54
7.08
P0.6 × 11=6.6
0.4
0.4
1.2 P0.6 × 5=3.0
8.66
8.16
Hole
(3 ×) ϕ0.2
Photosensitive
surface
1.0
2.0
KMPDC0442EB
7.58
P0.6 × 11=6.6
24
12
25
0.6
P0.6 × 5=3.0
13
8.66
9.26
0.67
0.18
(44 ×) ϕ0.2
36
1
48
37
Electrode
(48 ×)ȁ 0.4
Tolerance unless otherwise noted: ±0.2, ±2°
KMPDA0299EC
8
Distance area image sensor
S11962-01CR
Pin connections
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Symbol
GND
Vdd(A)
GND
NC
dis_read
ext_res
reset
vst
oe
hst
mclk
GND
NC
dclk
GND
Vdd(D)
NC
NC
NC
GND
Vdd(D)
GND
Vdd(A)
NC
GND
Vout2
Vout1
Vref
Vr
Vsf
Vpg
GND
Vdd(A)
NC
NC
GND
NC
NC
Vdd(A)
GND
VTX3
VTX2
VTX1
Vdd(A)
GND
NC
NC
NC
I/O
I
I
I
O
I
I
I
O
I
I
I
O
I
I
I
I
I
I
I
O
O
I
I
I
I
I
I
I
I
I
I
I
I
I
I
-
Description
Ground
Analog supply voltage
Ground
No connection
Non-readout period pulse
Pixel reset pulse
Frame reset pulse
Frame synchronous trigger pulse
Output signal effective period pulse
Line synchronous trigger pulse
Master clock pulse
Ground
No connection
Output signal synchronous pulse
Ground
Digital supply voltage
No connection
No connection
No connection
Ground
Digital supply voltage
Ground
Analog supply voltage
No connection
Ground
Output signal 2
Output signal 1
Bias voltage (output offset)
Bias voltage (pixel reset)
Bias voltage (pixel amplifier)
Bias voltage (photosensitive area)
Ground
Analog supply voltage
No connection
No connection
Ground
No connection
No connection
Analog supply voltage
Ground
Charge transfer clock pulse 3
Charge transfer clock pulse 2
Charge transfer clock pulse 1
Analog supply voltage
Ground
No connection
No connection
No connection
Note: Leave the “NC” terminals open and do not connect them to GND.
Connect impedance convering buffer amplifiers to Vout1/Vout2 so as to minimize the current flow.
9
Distance area image sensor
S11962-01CR
Measured example of temperature profile with hot-air reflow oven for product testing
300 °C
260 °C max.
Temperature
230 °C
190 °C
170 °C
Preheat
Preheat
60
60 to
to 120
120 ss
Soldering
Soldering
40 s max.
Time
KMPDB0381EA
∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a
humidity of 60% or less, and perform soldering within 168 hours.
∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used.
Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Dislaimer
∙ Surface mount type products
∙ Image sensors
Information described in this material is current as of June, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMPD1141E04 Jun. 2015 DN
10
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